PD-90467A

IRF460
500V, N-CHANNEL

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on)
IRF460
500V
0.27

ID
21A

The HEXFETtechnology is the key to International

Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest State of the Art design achieves: very low onstate resistance combined with high transconductance;
superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.

TO-3
Features:
n
n
n
n
n

Repetitive Avalanche Ratings

Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling

Absolute Maximum Ratings

Parameter
ID @ VGS = 10V, TC = 25C
ID @ VGS = 10V, TC = 100C
IDM
PD @ TC = 25C
VGS
EAS
I AR
EAR
dv/dt
TJ
T STG

Continuous Drain Current

Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight

Units
21
14
84
300
2.4
20
1200
21
30
3.5
-55 to 150

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (0.063 in. (1.6mm) from case for 10s)

11.5 (typical)

For footnotes, refer to the last page

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1
09/04/14

IRF460

Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)

BVDSS
BVDSS/TJ

Parameter

Min

Drain-to-Source Breakdown Voltage

500

0.78

V/C

2.0
13

0.27
0.31
4.0

25
250

84
12
60

6.1

100
-100
190
27
135
35
120
130
98

VGS(th)
g fs
IDSS

Temperature Coefficient of Breakdown

Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current

IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance

RDS(on)

Typ Max Units

V
S
A
nA
nC

ns
nH

Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25C, ID = 1.0mA
VGS = 10V, ID = 14A
VGS = 10V, ID = 21A
VDS = VGS, ID = 250A
VDS = 15V, IDS = 14A
VDS = 400V, VGS = 0V
VDS = 400V
VGS = 0V, TJ = 125C
VGS = 20V
V GS = -20V
VGS = 10V, ID = 21A
VDS = 250V
VDD = 250V, ID = 21A,
RG = 2.35

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from
package)

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

4300
1000
250

pF

VGS = 0V, VDS = 25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

IS
ISM

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

21
84

VSD
trr
Q RR

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

1.8
580
8.1

V
ns
C

ton

Forward Turn-On Time

Test Conditions

Tj = 25C, IS = 21A, VGS = 0V

Tj = 25C, IF = 21A, di/dt 100A/s
VDD 50V

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter
RthJC
RthJA

Junction to Case
Junction to Ambient

Min Typ Max

0.42
30

Units
C/W

Test Conditions
Typical socket mount

For footnotes, refer to the last page

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IRF460

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

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Fig 2. Typical Output Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF460

13 a& b

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

ID, Drain-to-Source Current (A)

1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100

100s

10
1ms
10ms

1
Tc = 25C
Tj = 150C
Single Pulse

0.1
1

DC
10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF460

V DS
V GS
RG

RD

D.U.T.
+

-V DD

10V
Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

10%
VGS
td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF460

15V

VDS

D.U.T

RG

10V
20V

IAS

DRIVER

+
- VDD

0.01

tp

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS
Current Regulator
Same Type as D.U.T.

Fig 12b. Unclamped Inductive Waveforms

50K

QG

10 V
QGS

.2F
.3F

D.U.T.

QGD

+
V
- DS

VGS

VG

3mA

Charge

Fig 13a. Basic Gate Charge Waveform

12V

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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IRF460

Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25C,
Peak IL = 21A,

ISD 21A, di/dt 160A/s,

VDD 500V, TJ 150C

Suggested R G = 2.35
Pulse width 300 s; Duty Cycle 2%

Case Outline and Dimensions TO-204AE (Modified TO-3)

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2014

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