Escolar Documentos
Profissional Documentos
Cultura Documentos
P A IRFAN KHAN
Reg no:11406887, RE2407A21 , ECE563 SOLID STATE DEVICES
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
LOVELY PROFESSIONAL UNIVERSITY, PHAGWARA , PUNJAB
p.a.irfankhan@gmail.com
INTRODUCTION
wide band gap are also called due to a relatively wide energy
band gap as compared to conventional silicon .The electronic
band gap is the energy gap between the top of the valance
band and bottom of the conduction bandin solid materials.
Electrons can jump the gap to the conduction band by thermal
energy. Some materials have no band gap that give sthe
semiconductros the ability to switch currents on and off in
order to achieve the electrical function.
Wide band gap materials have several characterstics that
makes them usefulcompund to lower bandgap materials. Due
to this higher energy gap the devices ability to operate at
higher temperature and for some applications allows devices
to switch larger voltages.
wide band gap semiconductors like silicon carbite, gallium
nitride ,which is having high band gap, high electron
saturation velocity, high thermal conductivity and temperature
operation range capabilities. The feature will allow wide band
gap electron circuits to operate at very high voltages with high
power amplification efficiency. The Yole development
research estimates that replacing silicon with silicon carbite
(or),gallium nitride can increase DC-to-DC conversion
efficiency from 85 % - 95 %and AC-to-DC conversion
efficiency from 85% - 90%. [1]
STRUCTURE OF WBG
Band gap :
It is an energy range in a solid where no electron states can
exist. In graphs of the electronic band structure of solids the
band gap generally refers to the energy difference between top
of the valance band and bottom of the conduction band. An
important technique for measuring the band gap energy of a
TYPES OF WBG
PROPERTIES OF WBG
Optical Properties :
The minimum photon energy that is needed to excite
electron into the conduction band is associated with the bad
gap of a material.When electron hole pair undergo
recombination ,photons are generated with enegies that
corresponds to the magnitude of the bandgap.
Breakdown Field :
Wide band gap semiconductors are associated with a high
breakdown voltage.This is due to a larger electric field
required to generate carriers through impact mechanism.
Saturation Velocity :
High effective massesof charge carriers are a result of low
bad curvatures, which correspond to devices with wide band
gap semiconductor is due to the high carrier is due to the high
carriers drift velocity.
APPLICATIONS OF WBG
Optoelectronics :
CONCLUSION
Wide band gap semiconductors are here to start the
migration to better materials.Gan transistors to provide the
industry , smallest and highest eifficancy powercontrol system .
SiC power devices are expected to male biggest impact in
renewable energy applications such as solar and wind power
generations systems and grid storage.Both SiC and GaN
power devices are anticipated to be well adopted in automotive
and transportation system due to high heat.Wide band gap
semiconductors are still major challenges , not the least of
which cost reduction need to optimize packing to allow the full
realization of the wide band gap materials.
REFERENCES
[1]
http://www.manufacturing.gov/docs/wide_bandgap_semicond
uctors
[2]
Solid state electronics devices by Ben g .Streetman
and sanjay benerjee fifth edition.
[3]
ACKNOWLEDGMENT
I am thankful to the university management system for
providing me with the activity such as Term paper. I sincerely
thank my faculty in charge for providing me with an interesting
http://epc-co.com/epc/documents/papers.
http://users.ece.gatech.edu/~shensc/research.html.