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PECVD SiNx:
SiHx + NHx SiNx (+H2)
or SiHx + N SiNx (+H2)
PECVD SiOx: SiHx + N2O SiOx (+H2 + N2)
PECVD SiONx: SiHx + N2O + NH3 SiONx (+H2 + N2)
PECVD a-Si:H
PECVD SiC:
SiHx Si (+H2)
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
SiH4 flow
NH3:SiH4 ratio
13MHz power
pressure
temperature
Dep.
rate
Refr.
Index
Dep. Rate
Uniformity
Refr. Index
Uniformity
Film Stress
(more compr.)
(more tensile)
BHF Etch
rate
SiOx (Oxide)
SiH4 flow
N2O:SiH4 ratio
13MHz power
pressure
temperature
Dep.
rate
Refr.
Index
Dep. Rate
Uniformity
Refr. Index
Uniformity
(more tensile)
BHF Etch
Rate
(more compr.)
?
?
Film Stress
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
RI
1.48
1.475
1.47
1.465
1.46
1.455
15
25
35
45
55
N2O/SIH4 RATIO
Oxford Instruments plc 2003
Oxford Instruments
Plasma Technology
65
75
85
450
400
350
300
250
200
150
100
50
0
15
25
35
45
55
N2O/SIH4 RATIO
Oxford Instruments
Plasma Technology
65
75
85
1.51
With 100 s ccm NH3
1.5
Without NH3
1.48
1.47
1.474
1.46
1.472
1.45
1.47
30
40
50
60
70
1.468
RI
RI
1.49
N2O : SiH4
1.466
1.464
1.462
1.46
1.458
0
20
40
60
80
Oxford Instruments
Plasma Technology
100
120
Low rate
dep
High rate
dep
Thermal
oxide
Oxford Instruments
Plasma Technology
Low rate
dep
High rate
dep
Thermal
Oxide
200 C
400 C
600 C
Oxford Instruments
Plasma Technology
200 C
400 C
600 C
800 C
Standard SiNx
Oxford Instruments plc 2003
Disadvantages
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
E
( t substrate )
= 2.
.
r
t film
3 (1 )
2
where
: = film stress
= change in wafer
t substrate
E = Youngs
bow,
r = radius of scan
= Poisson
ratio
Oxford Instruments
Plasma Technology
( t substrate )
= 2.
r
t film
x 6 .16 x 10
11
dynes
cm
Example: 10m bow on 25mm radius scan, 500m Si substrate, 0.5m film:
( 500 )
10
=
.
2
0 .5
( 25000 )
4.93 x 10
dynes
cm
x 6 .16 x 10
0.493GPa
Oxford Instruments
Plasma Technology
11
dynes
cm
493MPa
Oxford Instruments
Plasma Technology
Tensile
Stress (GPa)
0.2
0
-0.2 0
20
40
60
100
-0.4
-0.6
-0.8
SiNx
Compressive
-1
HF Pulse Time (%)
80
Oxford Instruments
Plasma Technology
SiOxNy
F ilm S tr e s s (G P a )
SiO2
0.4
SiN
0.2
SiON
Tensile
Linear (SiN)
0
0
10
20
30
40
50
60
70
80
-0.2
-0.4
Percentage HF = 100*HF/(HF+LF)
-0.6
Where:
-0.8
-1
Compressive
Percentage HF
Oxford Instruments
Plasma Technology
90
100
0 - -50MPa
1.49
1.485
RI
1.48
1.475
1.47
1.465
1.46
1.455
15
25
35
45
55
N2O/SIH4 RATIO
Oxford Instruments
Plasma Technology
65
75
85
Stress
600
500
400
300
200
100
0
0.8
0.9
1
NH3/SiH4
Oxford Instruments
Plasma Technology
1.1
1.2
150
100
50
0
450
500
550
600
650
700
Stress
Pressure (mT)
Stress (MPa)
Stress (MPa)
200
350
300
250
200
150
100
50
0
Stress
10
20
30
HF power (W)
Oxford Instruments
Plasma Technology
40
50
a-Si:H
Oxford Instruments
Plasma Technology
16
17
18
19
20
Stress (MPa)
-50
-100
Stress
-150
-200
-250
SiH4 flow
Oxford Instruments
Plasma Technology
Stress (MPa)
-100
-200
B2H6
-300
-400
-500
-600
Dopant flow (sccm)
Oxford Instruments
Plasma Technology
20
18
16
14
Oxford 2Torr
12
10
Oxford 1Torr
8
6
4
6
10
12
Pow er (W)
Oxford Instruments
Plasma Technology
14
16
Oxford Instruments
Plasma Technology
Particle descriptions
Possible causes
Every run
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Every run
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1.
2.
ii.
How clean?
Oxford Instruments
Plasma Technology
Flatness of electrode
ii.
iii.
d) or increase LF frequency
Oxford Instruments
Plasma Technology
PECVD interlocks
PECVD clean gases (CF4/O2) are interlocked from all
deposition gases as a safety feature to avoid reaction of O2
and SiH4. Such a reaction is a safety hazard as this is an
explosive mixture, and is bad for the process since it will form
white SiO2 dust in gas lines.
The gas lines are hardware interlocked by 2 Nupro valves (1
normally open, 1 normally closed) in gas pod to provide
maximum safety.
However, in order to prevent dust build up in gas lines it is
recommended that at least 2 pump/purge cycles (5min
pump/5min purge 500sccm N2, 2Torr) are carried out between
cleaning and deposition or vice versa.
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
80Plus
System100
SiO2
10m
up to 100m
SiN
10m
20m
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology
Oxford Instruments
Plasma Technology