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APPLICATION NOTE
ABSTRACT
With a continuous growth rate of 20% per year, electronic
lamp ballasts are widely spread over the world. Even though
the light out of a fluorescent tube has a discontinuous
spectrum, the higher efficiency brought by the electronic
control of these lamps make them the best choice to save the
energy absorbed by the lighting systems.
A few years ago, the lack of reliable and efficient power
transistors made the design of such circuits difficult! Today,
thanks to the technology improvements carried out by ON
Semiconductor, design engineers can handle all of the
problems linked with the power semiconductors without
sacrificing the global efficiency of their circuits.
This Application Note reviews basic electronic lamp
ballast concepts and gives the design rules to build industrial
circuits.
SUMMARY
1. MAIN PURPOSE
Fluorescent tube basic operation
Standard electromagnetic ballast
Electronic circuits
2. HALF BRIDGE CIRCUIT DESIGN
3. DIMMABLE CIRCUIT
4. NEW POWER SEMICONDUCTORS
5. CONCLUSIONS
6. APPENDIX
Inom
V
Von
Vstrike
AN1543/D
The most commonly used network is built around a large
inductor, connected in series with the lamp, and associated
with a bimetallic switch generally named the starter.
Figure 3 gives the typical electrical schematic diagram for
the standard, line operated, fluorescent tube control.
TUBE T
MAINS
220 V 50 Hz
S
BI-METALLIC
TRIGGER
BALLAST
Vac
Von
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4, as soon as the current through the lamp runs above a few
kiloHertz.
with: = 2**F
F = in Herz
L = in Henry
(1)
Z = in Ohm
50 Hz
(2)
(3)
Z + (230100)0.55 + 238 W
1 MHz
Z +
10 kHz
Z
2*p*F
The half bridge is, by far, the most widely used in Europe
(100% of the socalled Energy Saving Lamps and Industrial
applications are based on this topology), while the pushpull
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is the preferred solution in the USA with around 80% of the
C2
Lp
DRIVER
NETWORK
C3
LINE
FILTER
Von
Q2
Itube
C1
LINE
220 V
FLUORESCENT
TUBE
V(BR)CER
Inrush Current
tsi window
Drive
Intrinsic Galvanic
Isolation
Half Bridge
PushPull
700 V*
3 to 4 times Inom**
2.60 s 3.60 s
High & Low side
no
1100 V to 1600 V*
2 to 3 times Inom**
1.90 s 2.30 s
Low side only
yes
T1
Q1
Np
Np
VCC
VCC
Nb
Nb
Np
Np
LOAD
Q2
T1
Q1
T2
R1
LOAD
Q2
Nb
VFB
Nb
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a few tens of watts, because the global efficiency is
downgraded by the dual mode operation of the output
transformer (i.e., saturable and linear). Figure 6 gives the
typical schematic diagram.
R1
Q1
T2
VCC
Nb
C
1
Nb
R2
R3
T1
Np
Np
LOAD
Q2
Starting Circuit
In general, the basic circuits depicted in Figures 6 and 7
will not oscillate readily, unless some means is provided to
begin oscillation. This is especially true at full load and low
temperature. A simple, commonly used starting circuit is
shown in Figure 8 In this design, resistors R1 and R2 form
a simple voltage divider to bias the transistors to conduction
before the oscillation starts.
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L
T1
Q1
C1
VCC
C2
R1
LOAD
Q2
R2
Nb
C3
Nb
IC, UNLOADED, TWO TRANSFORMER CONVERTER
VCE
IC
Q1
R1
330 k
C5
LINE
FILTER
INPUT
RECTIFIER
C6
D2
1N4937
T1
Lp
A
C4
LINE
220 V
Itube
R2
D1
C1
22 nF
C2
100 nF
400 V
Von
Cp
C3
100 nF
400 V
Q2
R3
D3
1N4937
D4
DIAC 32 V
R4
10
FLUORESCENT TUBE
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Vtrig
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V(BR)EBO of the transistors, otherwise the BaseEmitter
junction goes in avalanche and the global efficiency can be
downgraded.
Moreover, one must point out that, even if the transistor
can sustain a BaseEmitter avalanche (assuming that the
associated energy Ej is within the V(BR)EBO maximum
rating), such a continuous mode of operation may make the
transient and long term behavior of the converter more
difficult to predict.
However, there is no problem if the BaseEmitter junction
is forced into the avalanche mode during startup because,
under these conditions, the energy dissipated into the
junction is very low and can be absorbed by the silicon.
The VBB voltage is given by another electromagnetic
equation:
dIc
V
+ CC
L
dt
(7)
Startup Sequence
(8)
2 * p * (L * C)
L*w
SR
(9)
1
*
SR
CL
(10)
R2 )
Lw
1 2
Cw
(11)
(4)
Lw +
(6)
Operation Description
Np
Ns
Np
VBB + VB *
1
Cw
(12)
(5)
Z = R
(13)
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I +
VCC
(14)
SR
Lp
Itube
(15)
VPP
HALF
FLUORESCENT
BRIDGE
TUBE
Von
Pout = Von*Itube
L low
R
Z=R
L high
R
Z = R
F
fo
F +
VP * 104
4 * NP * BS * Ae
(16)
Care must be taken, not to try to cut cost in the base drive
network as the dynamic parameters of the power transistors
will likely to not be optimized. In fact, the storage time will
probably be greater than the computed operating chopper
frequency.
The graph given in Figure 14 gives the typical storage time
variation, as a function of the bias conditions, for a bipolar
transistor. More detailed information is available from the
designers data sheet provided by ON Semiconductor.
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b. As the Collector current increases, the operating point
of the transistor moves along its HFE = f(IC) curve.
5
IB1 = IB2 = 160 mA
Lc = 200 H
Vclamp = 300 V
3
tsi ( s)
1
0
1.0
2.0
IC (A)
H = 5 s/DIV
V = 500 mA/DIV
STORAGE TIME
COLLECTOR
CURRENT
tsi
ZERO
H = 5 s/DIV
V = 100 mA/DIV
IB2
(17)
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to saturate the core because, in this case, the current will be
much higher than the expected one. On the other hand, its not
very easy to anticipate all of the tolerance at this point of the
design; therefore, as a rule of thumb, the first pass can be
made by using IP/2 to compute the oscillator.
From the toroid data book provided by LCC, let us try the
FT6.3 toroid (external diameter = 6.30 mm) with IP = half
IC peak:
NP +
IE * HS
IP
NP +
1.60 * 0.40
0.35
NP + 1.82 turn
NP +
NP + 2.85 turns
F +
(18)
IP = current into NP
IE = effective core perimeter in cm
1
ton +
) 5.5 * 106
2 * 20424
1 * 104
4 * 3 * 0.51 * 0.08
F + 20424 Hz
IE +
2.50 * 0.40
0.35
ton = 29.98 s
(18a)
F = 1/(2*29.98*106) = 16677 Hz
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a value well within the expected range. This toroid will be
the final choice for this design.
Ext. Dia.
mm
6.30
10.00
16
IE
cm
1.60
2.50
4.00
A
cm2
0.032
0.08
0.20
Based on Equation 17, its clear that the storage time (tsi)
of the power transistors plays a significant role in defining
the electronic lamp ballast. This dynamic parameter has two
main impacts on the design:
a. operating frequency of the converter, hence the
power delivered to the load as derived from
Equations 1 and 3, will not be constant from one
module to another.
b. the output inductor (L) can be driven with other than a
50% Duty Cycle, yielding a risk of saturating the core.
The capacitive side of the half bridge helps to prevent the
saturation of the inductor if the D.C. is not 50% (point b).
The mid point can float around half the VCC value, but
cannot compensate for the large variations one will have by
using transistors not specifically designed for this circuit.
On the other hand, some low cost designs use a single
capacitor to close the loop, yielding a high risk of saturation
which, in turn, can lead to the destruction of the power
switches by the resulting current under fault conditions.
Point (a) is worse for low power modules, particularly
when the line voltage is 120 V, because even a small
variation in frequency can either over or under drive the
fluorescent lamp.
Consequently, the transistors used in such designs must
have a tight dispersion of their dynamic parameters, a
specified min/max window of the storage time is mandatory
to achieve stable and reliable operation. Of course, this can
easily be done by using two MOSFET devices, but the cost
increases significantly, keeping the ON losses constant,
compared to the BIPOLAR transistors. However, for low
power/low line voltage applications, the MOSFET can
provide a good alternative to this kind of electronic ballast
design.
The next step is the selection of the power
semiconductors, the main parameters to take into account
are the input line voltage, the output power and the operating
chopper frequency.
1000
900
BVCER (VOLTS)
800
700
600
500
400
300
200
RBE ()
400
BREAKDOWN VOLTAGE
(19)
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few hundredths of a millisecond, there is no need to select
a transistor with this inrush current value as a nominal IC
capability. The designer will preferably use the steady state
condition to define the power semiconductor.
In steady state, the rms current into the lamp will be:
Irms = Pout/Von
Irms = 55/100 = 550 mA
The peak current is:
IP + Irms * 2
IP + 550 * 2 + 770 mA
V(BR)CEO
V(BR)CES
IC
Nom
BUL35
BUL43B
BUD43B
BUL44
BUL44D2
BUD44D2
BUL45
BUL146
BUL147
MJE18002
MJE18002D2
MJE18004
MJE18004D2
MJE18006
MJE18204
MJE18604D2
MJE18605D2
250 V
350 V
350 V
400 V
400 V
400 V
400 V
400 V
400 V
450 V
450 V
450 V
450 V
450 V
500 V
800 V
800 V
400 V
650 V
650 V
700 V
700 V
700 V
700 V
700 V
700 V
1000 V
1000 V
1000 V
1000 V
1000 V
1200 V
1600 V
1600 V
2A
1A
1A
1A
1A
1A
2A
3A
4A
1A
1A
2A
2A
3A
2A
1A
2A
Package
250 V
250 V
500 V
600 V
500 V
600 V
500 V
2.00
1.10
8.50
3.80
3.00
1.20
0.80
DPAK
DPAK
DPAK
DPAK
TO220
TO220
TO220
NP*IP = NS*IS
(20)
IC
Peak Package
4A
2A
2A
2A
2A
2A
4A
5A
6A
2A
2A
4A
4A
5A
4A
3A
4A
RDS(on)
V(BR)DSS
NS + 2 *
TO220
TO220
TO220
TO220
TO220
DPAK
TO220
TO220
TO220
TO220
TO220
TO220
TO220
TO220
TO220
TO220
TO220
IP
IS
800
+ 10 turns
160
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The windings are derived from the general Equation 21
used for transformers:
VP
V
+ BB
NP
NS
(21)
NB = 10 turns
VBE(on)
VBB
VP
NB + NP *
(23)
IB
then: ZB = 1.10/0.18 = 6
Let us select RB = 15 , then:
VBB 15*0.18+1.10+1
VBB 4.80 V
IB
Nb
Rb
Rb
VBB
Nb
Re
VEE
Cb
Ri
VBT
Re
VEE
Z +
Q1
Q1
(24)
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T1. As a rule of thumb, the time constant shall be 5% of the
ON time, in our case around 500 ns, yielding C1 = 22 nF.
Freewheeling Diodes
(25)
300
LP +
+ 1.60 mH
2 * p * 30000
1
4 * p2 * F2 * LP
CP +
1
+ 4.39 nF
4 * p2 * 600002 * 1.6 * 103
PB = V(BR)EBO*IA*dt*F
(26)
1
+ 58 kHz
2 * p * (1.6 * 103 * 4.7 * 109)
Safety Circuit
1
4 * p2 * fo2 * LP
(27)
1
+ 4.39 nF
4 * p2 * 60000 * 1.6 * 103
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memorize the failure mode until the user switches off the
mains (see Figure 21).
Q1
Cp
Q1
Cp
Lp
Lp
I > IH
TUBE
Q2
R3
Q2
R1
D1
Q3
TUBE
Q3
R2
C1
D1
R2
DIAGNOSTIC CIRCUIT
R1
R3
C1
DIAGNOSTIC CIRCUIT
Q1
Cp
Lp
TUBE
Q2
+VCC
R1
D1
Q3
R3
R2
C1
DIAGNOSTIC CIRCUIT
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Circuit Description
1N4937
100 k
4 x 1N4007
MUR150E
100 nF
630 V
+400 V
22 k
1.2 M
330 F
1.8 M
8
4.7
5
MTP4N50E
7
3
MC34262
MAINS
185 V 265 V
10 nF
12 k
1 F
12 k
22 F
450 V
1.2
A
1
%H
30
10
7
6
0.5
IEC555-2 SPECIFICATION
5
4
0
60
120
180
240
300
360
3
2
1
10
30
40
HARMONIC
TOTAL HARMONIC DISTORTION
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20
R1
12 k
LINE
220 V
C1
10 nF
R2
1.2 M
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C3
1 F
U1
MC34262
6
2 4
C17
47 nF
630 V
FUSE
C2 +
330 F
25 V
D1
MUR120
R3
100 k/1 W
AGND
FILTER
R4
22 k
D2
MUR180E
R6
1R
D9
C15
100 nF
D8
3
Q1
MTP4N50E
C16
47 nF
D6 630 V
D7
R5
1R
T2
P1
20 k
R10
10 R
D3
1N4007
C5
0.22 F
Q4
MCR26
D3
D3
1N4148 1N4148
D3
D3
1N4148 1N4148
R8
1k
T1c
T1b
T1d
D4
DIAC
C7
10 nF
R12
4.7 R
C8
2.2 nF
R11
C6 4.7 R
10 nF
L1
1.6 mH
R14
2.2 R
Q2
BUL44D2
R16
1M
C10
R15 470 nF
100 R
D5
ZENER 10 V
T1a
FT063
R13
2.2 R
Q2
BUL44D2
R17
10 k
Ptube = 55 W
C4 +
47 F
450 V
R7
1.8 M
R9
330 k
C9
2.2 nF
C11
4.7 nF
1200 V
C14
100 nF
250 V
AGND
C12
22 nF
R18
PTC
C13
100 nF
250 V
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constant DC voltage. The circuit uses the newly developed
BUL44D2 transistors in a standard self oscillant
configuration. The performance is summarized below, and
the parts list and printed circuit board layout are available in
the appendix.
55 W
65C (steady
state, free air)
Temperature:
Cos:
0.98
Global Efficiency:
85%
2
5 s
10 mV
1
IC = 500 mA/DIV
1
5 s
10 mV
2
IB = 100 mA/DIV
5 s
1
2
10 mV 50
10 mV 50
LINE = 230 V
200 MS/s
40 kHz
DC 9 mV
j STOPPED
LOAD = 58 W
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3
.1 s
100 V
LOSSES = IC*VCE
VCE = 100 V/DIV
A 1*3
.1 s
6 V2
1
.1 s
10 mV
IC = 200 mA/DIV
.1 s
1
2
3
4
10 mV 50
10 mV 50
1 V DC x 100
500 MS/s
DC 7.4 mV
j STOPPED
.2 V DC x 10
VCE = 1 V/DIV
4
2 s
1V
DYNAMIC VCE(sat)
4
VIRTUAL VCE(zero)
2 s
10 mV
IC = 500 mA/DIV
2 s
1
2
3
4
10 mV 50
10 mV 50
50 mV DC x 100
.1 V DC x 10
500 MS/s
DC -5.4 mV
j STOPPED
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VCE
+VCC
LOAD
VCES(dyn1)
D1
R1
+Vaux
Q1
DRIVE
VCES(dyn)
OSCILLOSCOPE
VCES(dyn2)
1 s
3 s
VCE(sat)dyn DEFINITION
MEASUREMENT TECHNIQUE
COLLECTOR
D3
D1
Q1
VCE(sat)
BASE
D2
VBE(on)
EMITTER
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The oscillator is built with the VCO integrated into U1 to
make this module dimmable with a voltage source. The
flipflop U2 provides two out of phase signals to drive the
Mosfet Q1 and Q2 which, in turn, control the power stage
Q3/Q4. Transistors Q5 and Q6, respectively connected
across Gate/Source of Q3/Q4, provide a low impedance path
to rapidly discharge the input capacitance of the high voltage
devices, avoiding the risk associated with poor drive
conditions, particularly when the converter operates at high
frequency.
The results of the tests performed in Toulouse are
summarized in Table 6.
15 W
65 W
22 kHz
170 kHz
0.60 (without PFC network)
0.98 (with MC33262based PFC)
TC = 40C (steady state, in free air)
Circuit Analysis
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22
LINE
220 V
AGND
P1
22 k
R8
1k
+15 V
FUSE
T2
15 V-3.5 VA
C15
47 nF
630 V
FILTER
D3
1N4148
C1
470 pF
TP1
C14
100 nF
D2
1N4148
AGND
D1
R7
15 k
C17
4.7 F
16 V
12
D9
+ C11
100 F
TP2
C9
100 nF
6
S
3
1
C U2 Q
MC14013
2
5
D
Q
R
4
C11 +
C12
22 F
22 F
385 V
385 V
D8
R2
150 k
R1
11 8.2 k
AGND
C8
100 nF
D4
BRIDGE 100 V/1 A
C13
47 nF
D6 630 V
D7
U1
MC14046
16
+15 V
IN
GROUND
OUT
Q5
MC7815
R4
2.2 k
TP3
C10
100 F
16 V
R3
2.2 k
C6
220 nF
+ C7
100 F
+15 V
3
Q2
MPF960
1
3
C5
Q1
220 nF
MPF960
T1a
1
FT1603A
+15 V
T1c
T1b
R13
47 R/2 W
R12
1k
R6
100 R
R11
1k
R5
100 R
2
R10
330 k
Q6
BC557C
Q5
BC557C
R9
10 l/2 W
D6
1N4148
D5
1N4148
L1
1 mH
3
Q4
MTP8N50E
3
Q3
MTP8N50E
C4
100 nF
250 V
MTP8N50E
C2
630 pF
1200 V
C3
100 nF
250 V
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3
2 s
200 V
3
4
2 s
5V
ID = 200 mA/DIV
2 s
10 mV
VGS = 5 V/DIV
4
2 s
10 mV 50
10 mV 50
2 V DC x 100
1
2
3
4
500 MS/s
DC 2.6 mV
j STOPPED
.5 V DC x 10
Figure 32. Drain Current and Gate Voltage in Steady State at Pout = Pmax
3
2 s
200 V
VDS = 200 V/DIV
3
4
2 s
5V
ID = 200 mA/DIV
2 s
10 mV
VGS = 5 V/DIV
4
2 s
1
2
3
4
10 mV 50
10 mV 50
2 V DC x 100
500 MS/s
DC 2.6 mV
j STOPPED
.5 V DC x 10
Figure 33. . Drain Current and Gate Voltage in Steady State at Pout = Pmin
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NEW POWER SEMICONDUCTORS
Integration
C
MAIN TRANSISTOR
PNP
ANTISAT NETWORK
V(BR)CEO V(BR)CBO
IC
Nom
IC
Peak
2A
4A
2 A (under
development)
4A
4A
5A
BUL44D2
BUL45D2
MJD18002D2
400 V
400 V
450 V
700 V
700 V
1000 V
1A
2A
1A
MJE18004D2
MJE18604D2
MJE18605D2
450 V
450 V
450 V
1000 V
1600 V
1600 V
2A
2A
3A
FREE WHEELING
DIODE
IB
I-IB
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tsi ( s)
AN1543/D
3
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
2
IC (A)
BIAS CONDITIONS: IB1 = IB2 = 400 mA
tsi ( s)
6
tsi Re = 0
tsi Re = 1.2
Rb
0
20
40
60
TC = C
80
100
120
Q1
H2BIP
Re
Lp
Q2
H2BIP
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C2
100 nF
400 V
Q1
GATE DRIVE NETWORK
D4
1N4148
C5
R1
330 k
INPUT
RECTIFIER
D3
LINE
FILTER
D2
Q3
BC557
R2
Cp
C6
Lp
C4
C3
100 nF
400 V
Q2
D6
1N4148
LINE
220 V
FLUORESCENT
TUBE
C1
22 nF
D5
D1
DIAC 32 V
Q4
BC557
R3
R4
10
This circuit works fine, but the four extra components for
each power MOSFET (Q3/D3/D4/R2 for Q1 and
Q5/D5/D6/R3 for Q2) take up significant space on the pcb,
the total cost is not negligible and, more over, using standard
transistors for Q3 and Q4 can lead to uncontrolled operation
of the module as a consequence of the very large gain
dispersion of these parts.
By using an existing process called Smart Discrete, ON
Semiconductor has integrated this sub circuit into the die of
the MOSFET, making the device driveable from high
impedance. This family of products is called ZPCMOS, an
acronym for Zero Power Controlled MOSFET, the basic
internal circuit is shown in Figure 40.
This device can be driven from any network. The turn off
time is independent of the impedance connected Gate to
Source, the value of resistor R1 being large enough to keep
the steady state Igs current below 100 A. The ZPCMOS
can be used in existing circuits, assuming that the electrical
parameters are compatible, as a dropin replacement
solution to improve the overall efficiency of a given
application. Figure 41 demonstrates the net savings, in terms
of component counts, brought by the ZPCMOS in a lamp
ballast application.
GATE DRIVE NETWORK
Q1
ZPCMOS
DRAIN
Q1
D1
GATE
Q2
R1
D2
Q3
Vin
D3
Lp
Q2
VGS(Q1)
ZPCMOS
V1
SOURCE
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26
AN1543/D
The application is assumed to be the same as the one
described in Figure 19.
For example, a demo board built with two ZPCMOS is
15% smaller than the circuit using the standard MTD5N25E
devices, saving two passive and six active parts in the
converter.
Most of the electronic lamp ballasts use a startup
network built around a Diac with associated clamp diode.
This circuit is automatically disconnected once the
converter is running .
The integration of these two components is now evaluated
to bring a simple, low cost TO92 or SMD packaged device
to perform this function. Figure 42 gives the typical circuit.
+VC
C
R1
Q1
Q3
D1
Vout
DRIVE
NETWORK
Q2
D2
+VCC
+VCC
Q1
R1
Q3
D1
Q2
Q1
P CHANNEL
Vout
D2
DRIVE
NETWORK
Q4
N CHANNEL
C1
SINGLE TO92 INTEGRATED CIRCUIT
Q1 AND Q2: HALF BRIDGE CONVERTER
D1: 500 V/0.050 A
D2: DIAC 27 TO 32 V
R1: 220 k TO 470 k 1/4 W
C1: 22 nF-100 V
Other Configurations
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AN1543/D
to keep the costs compatible with this market, it is preferable
to leave the power switches outside the IC, the half bridge
being built either with two small footprint packages (DPAK,
+VCC
INPUT LINE
RECTIFIER AND FILTERING
INITIALIZATION
Q2
D1
L
STARTUP
OUTPUT
Q1
Q3
PFC
MC33262
OSCILLATOR AND
GATE DRIVE
DIAGNOSTIC
TJ Tamb
(28)
Rthja
RDS(on)(max) +
P
IDRMS2
(29)
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28
AN1543/D
Figure 46 gives the typical block diagram for such an
application.
The circuit can be either split into two packages (one for
the controller, the second for the power stage), or built inside
the same SOIC as depicted by the dotted line in Figure 45.
+Vbat
FLYBACK
+100 V/+400 V
80 V
Q1
LINE
HIGH
PRESSURE
LAMP
80 V
CONTROLLER
Q2
IS
Q
+V
C1
C2
IGNITION
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29
AN1543/D
FERRITE
LAMP
+VCC
5 cm
Cp
Q1
Lp
DRIVER
XTAL
CLASS D OR E AMPLIFIER
RF RESERVED FREQUENCIES:
2.65 MHz 13.56 MHz
27.12 MHz
AVAILABLE BAND: 100 kHz-400 kHz.
POWER FERRITE MATERIAL AVAILABLE
UP TO 3 MHz.
LAMP IONIZATION VOLTAGE: 0.6 TO
0.9 V/cm.
CONCLUSIONS
Not only does the ELB save a lot of energy, but the
miniaturization of the electronic ballasts makes them
suitable for small enclosures. The fluorescent lighting
market will continue to grow rapidly during the next decade,
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30
AN1543/D
APPENDIX
3. FBSOA: Forward Bias Safe Operating Area. This
parameter specifies the maximum power the transistor
can sustain when it is operating in the Forward Base bias
mode. The FBSOA is dependent upon the power pulse
width and cannot be exceeded under any circumstances.
4. V(BR)CER: Collector to Emitter Breakdown Voltage,
Base connected to the Emitter via a low impedance.
5. V(BR)CES: Collector to Emitter Breakdown Voltage,
Base shorted to the Emitter.
6. V(BR)CBO: Collector to Base Breakdown Voltage,
Emitter open.
Symbol
B
H
mo
mr
Ae
le
lg
F
mmf
L
AL
Aw
Ax
N
lt
J
r
AP
W
SI Units
CGS Units
Tesla
AT/m
4*107
Gauss
Oersted
1
m2
m
m
Weber
AmpTurn
Henry
nH (1 turn)
m2
m2
cm2
cm
cm
Maxwell
Gilbert
Henry
nH (1 turn )
cm2
cm2
m
A/m2
Wm
m4
Joule
cm
A/cm2
Wcm
cm4
Erg
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31
CGS to SI
104
1000/4
4*107
1
104
102
102
103
10/4
1
1
104
104
1
102
104
102
108
107
AN1543/D
WIRE TABLE: Copper Wire, Heavy Insulation
AWG
Dia.
mm
Area
mm2
Dia. Ins.
mm
Area
mm2
/m
@ 20C
/m
@ 100C
Current
@ 4.5 A/mm2
Amps
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
2.59
2.31
2.05
1.83
1.63
1.45
1.29
1.15
1.02
0.91
0.81
0.72
0.64
0.57
0.51
0.45
0.40
0/.36
0.32
0.29
0.25
0.23
0.20
0.18
0.16
0.14
0.13
0.11
0.10
0.09
0.08
0.07
5.26
4.17
3.31
2.62
2.08
1.65
1.31
1.03
0.82
0.65
0.52
0.41
0.32
0.26
0.20
0.16
0.13
0.10
0.08
0.06
0.05
0.04
0.03
0.025
0.020
0.016
0.012
0.010
0.008
0.006
0.005
0.004
2.73
2.44
2.18
1.95
1.74
1.56
1.39
1.24
1.11
1.00
0.89
0.80
0.71
0.64
0.57
0.51
0.46
0.41
0.37
0.33
0.30
0.27
0.24
0.22
0.20
0.18
0.16
0.14
0.13
0.12
0.01
0.09
5.85
4.67
3.73
2.98
2.38
1.90
1.52
1.21
0.97
0.78
0.62
0.50
0.40
0.32
0.26
0.21
0.17
0.13
0.11
0.08
0.07
0.06
0.04
0.037
0.300
0.024
0.019
0.016
0.013
0.011
0.008
0.007
0.0033
0.0041
00.52
0.0066
0.0083
0.0104
0.0132
0.0166
0.0209
0.0264
0.0333
0.0420
0.0530
0.0668
0.0842
0.1062
0.1339
0.1689
0.2129
0.2685
0.3386
0.4269
0.5384
0.6789
0.8560
1.0795
1.3612
1.7165
2.1644
2.7293
3.4417
4.3399
0.0044
0.0055
0.0070
0.0088
0.0111
0.0140
0.0176
0.0176
0.0280
0.0353
0.0445
0.0561
0.0708
0.0892
0.1125
0.1419
0.1789
0.2256
0.2845
0.3587
0.4523
0.5704
0.7192
0.9070
1.1437
1.4422
1.8186
2.2932
2.8917
3.6464
4.5981
5.7982
23.68A
18.78A
14.90A
11.81A
9.365A
7.43A
5.90A
4.67A
3.70A
2.94A
2.33A
1.85A
1.46A
1.16A
0.92A
0.73A
0.58A
0.46A
0.36A
0.29A
0.23A
0.18A
0.14A
0.11A
0.091A
0.072A
0.057A
0.045A
0.036A
0.028A
0.023A
0.018A
RHF +
*1
2*p*r*a
A/mm2
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32
1
2 * p * ((m * F * 107))
AN1543/D
The RHF value can be derived from Equation 30:
with: F
l
d
1 * (8 * m * F * * 107)
d
Hertz
meter
mm
(30)
RHF +
0.50
mm
1.00
mm
2.00
mm
Thickness
a
25kHz
35kHz
50kHz
75kHz
100kHz
200kHz
300kHz
500kHz
1000kHz
N/A
N/A
N/
N/A
N/A
0.1073
0.1314
0.1697
0.2400
N/A
N/A
0.0268
0.0328
0.0379
0.0536
0.0657
0.0848
0.1200
0.0094
0.0112
0.0134
0.0164
0.0189
0.0268
0.0328
0.0424
0.0600
0.427mm
0.360mm
0.301mm
0.246mm
0.213mm
0.150mm
0.123mm
0.095mm
0.067mm
0.01
400
600
800
FREQUENCY (kHz)
NOTE: Curve valid for copper only.
200
1000
Dia.
mm/T
Power
(W)
Operating
Volt/Ampere
8 / 2400
8 / 2400
36 / T12
36 / T12
125
100
152 / 0.94
128 / 0.89
6 / 1800
6 / 1800
6 / 1800
36 / T12
36 / T12
28 / T8
85
75
70
123 / 0.77
131 / 0.64
128 / 0.70
0.05
5 / 1500
5 / 1500
36 / T12
28 / T8
65
58
113 / 0.64
113 / 0.63
0.04
4 / 1200
4 / 1200
36 / T12
28 / T8
40
36
104 / 0.42
104 / 0.42
3 / 900
28 / T8
30
101 / 0.36
2 / 600
2 / 600
36 / T12
28 / T8
20
18
58 / 0.38
58 / 0.38
0.07
0.06
0.03
0.02
0.01
0
200
400
600
800
FREQUENCY (kHz)
1000
1200
RESISTANCE ()
0.1
1200
THOMSON LCC
SIEMENS
NOTE: Wire is solid copper, one meter long, diameter 2.00 mm,
temperature is +20C.
PHILIPS
VOGT
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AN1543/D
IB1
IB
90%
10%
Rload
IC(sense
IB1
+
-
VCC
td
DUT
IB2
IC
ts
tr
tf
90%
IB2
90%
IB(sense)
IC
10%
10%
Value
Comments
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
C17
10 nF
330 F/25 V
1 F
47 F/450 V
220 nF/63 V
10 nF/63 V
10 nF/25 V
2.2 nF
2.2 nF
470 nF
4.7 nF/1200 V
22 nF/1200 V
47 nF/630 V
100 nF/250 V
100 nF/630 V
47 nF/630 V
47 nF/630 V
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
MUR120
MUR180E
1N4007
DIAC 32 V
Zener 10 V
1N4007
1N4007
1N4007
1N4007
1N4148
1N4148
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
Index
Value
D12
D13
1N4148
1N4148
L1
1.6 mH
VOGT
Q1
Q2
Q3
Q4
MTP4N50
BUL45D2
BUL45D2
MCR26
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
R14
R15
R16
R17
12 k
1.2 M
100 k / 1 W
22 k
1.0
1.0
1.8 M
1 k
330 k
10
4.7
4.7
2.2
2.2
100
1 M
10 k
U1
MC34262
ON Semiconductor
T1
OSCILLATOR
VOGT
Total Components = 54
Notes: * all resistors are 0.25 W, 5%, unless otherwise noted
* all capacitors are polycarbonat, 63 V, 10%, unless otherwise noted
Transformer T1:
Core = FT6.3
Ferrite = 4 A
T1A = 1 turn
T1B = T1C = 5 turns each
(primary)
(secondaries)
Core = EF2509
Ferrite = B2 or equivalent (Operating frequency: 150 kHz min)
N = 38 turns, wire dia = 1 mm, preferably Litz type.
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34
Comments
AN1543/D
DIMMABLE ELECTRONIC LAMP BALLAST PART LIST (Figure 31.)
Index
Value
Comments
ALP
not a component
C1
C2
C2B
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
C17
470 pF
330 pF/1500 V
330 pF/1500 V
100 nF/400 V
100 nF/400 V
220 nF/63 V
220 nF/63 V
100 F/25 V
100 nF
100 nF
100 F/16 V
22 F/385 V
22 F/385 V
47 nF/630 V
100 nF/63 V
47 nF/630 V
100 F/25 V
4.7 F/16 V
styroflex, AXIAL
pitch 600 mils
pitch 600 mils
pitch 600 mils
pitch 600 mils
pitch 200 mils
pitch 200 mils
radial 100 mils
pitch 200 mils
pitch 200 mils
radial 100 mils
radial 300 mils
radial 300 mils
pitch 600 mils
pitch 200 mils
pitch 600 mils
radial 100 mils
radial 100 mils
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
DR
ZENER 10 V
1N4148
1N4148
ZENER 18 V
1N4148
1N4148
1N4007
1N4007
1N4007
1N4007
100 V/1 A
ON Semiconductor
Index
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
BRIDGE
Value
Comments
L1
1 mH
Q1
Q2
Q3
Q4
Q5
Q6
MPF960
MPF960
MTP8N50E
MTP8N50E
BC557C
BC557C
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
ON Semiconductor
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
R11
R12
R13
15 k
150 k
4.7 k
4.7 k
100
100
15 k
1 k
10 k/2
330 k
1 k
1 k
47 /2 W
TP1
TP2
TP3
TP4
Test Point
Test Point
Test Point
Test Point
VCO voltage
Clock
Drive Voltage
GROUND
U1
U2
MC14046B
MC14013B
ON Semiconductor
ON Semiconductor
T1
DRIVER
Total Components = 60
Notes: * all resistors are 0.25 W, 5%, unless otherwise noted
* all capacitors are polycarbonat, 63 V, 10%, unless otherwise noted
Transformer T1:
Core = FT1600AM01
Ferrite = A9
T1A = T1B = T1C = 20 turns, wire dia. = 0.2 mm
Core = EF2509
Ferrite = B2 or equivalent (Operating frequency: 150 kHz min)
N = 38 turns, wire dia = 1 mm, preferably Litz type.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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35
AN1543/D