Power Amplifier (3G4G) AP7219M Data Sheet - V1.0

AP7219M
WCDMA/TD-SCDMA/LTE TDD and FDD

Multimode Multiband Power Amplifier Module
Datasheet
VERSION 1.0 18-Mar-2016
This document is commercially confidential and must NOT be disclosed to third parties without prior consent.
The information provided herein is believed to be reliable. But production testing may not include testing of
all parameters. AIROHA Technology Corp. reserves the right to change information at any time without
notification. ( HTTP://WWW.AIROHA.COM.TW TEL:+886-3-6128800 FAX:+886-3-6128833 sales@airoha.com.tw )
Confidential for Gionee
AP7219M
This document is commercially confidential and must NOT be disclosed to
third parties without prior consent.

The information provided herein is believed to be reliable. But production
testing may not include testing of all parameters. AIROHA Technology
Corp. reserves the right to change information at any time without
notification.
AP7219M Power Amplifier Module

Datasheet
Version 1.0 18-Mar-2016
Page 2 of 32
CONFIDENTIAL
Copyright 2016, Airoha Technology Corp.
AP7219M
Revision History
Version
Change Summary
Date
Author
1.0
Created datasheet
18-Mar-16
Philip Tseng

Datasheet
Page 3 of 32
CONFIDENTIAL
AP7219M
INDEX
1
2
3
4
5
6
Revision History .................................................................................................... 3

Features............................................................................................................... 5
Applications.......................................................................................................... 5
Description ........................................................................................................... 5
Pin Assignment ..................................................................................................... 6
Function Block Diagram ........................................................................................ 8
Electrical Characteristics ........................................................................................ 9

7.1 ABSOLUTE MAXIMUM RATINGS..................................................................................................... 9
7.2 RECOMMENDED OPERATING CONDITIONS ....................................................................................... 9
8
9
10
11
Electrical Specification .........................................................................................10

MIPI Registers .....................................................................................................21
Package Dimension ..............................................................................................26
Evaluation Board .................................................................................................29

Datasheet
Page 4 of 32
CONFIDENTIAL
AP7219M
Features
WCDMA Bands I, II, III, IV, V, VIII

TD-SCDMA Bands 34, 39
FDD LTE Bands 1, 2, 3, 4, 5, 7, 8,
9, 12, 13, 17, 20, 28, 30
TDD LTE Bands 38, 39, 40, 41
Low Voltage Positive Bias Supply
3.2V ~ 4.5V
+28dBm Linear Output Power at
LTE
10MHz
12RB
QPSK
modulation (MPR=0)
High Efficiency
30% at 28dBm
High Dynamic Range
Optimized for DC-DC Converter
Operation
Integrated Output Switch
Small Outline
4mm x 6.8mm x 0.86mm
42-pin configuration
MIPI RFFE Interface
Applications
Wireless Handsets
WCDMA
HSDPA
HSUPA
TD-SCDMA
TDD LTE
FDD LTE

Datasheet
Description
The AP7219M is a high-power, high-efficiency,
linear power amplifier module which supports 3G /
4G handset for low, mid, and high bands. All the RF
ports are matched to 50 for reducing external
matching components. Circuit control uses MIPI
interface to optimize linearity and current
performance for extending battery life time.
3G: The AP7219M supports WCDMA, HSDPA,
HSUPA, and TD-SCDMA modulation.
4G: The AP7219M supports FDD-LTE, TDD-LTE
with 1.4, 3, 5, 10, 15, 20 MHz channel bandwidths.
Page 5 of 32
CONFIDENTIAL
AP7219M
TRX1
GND
HB4
GND
HB3
41
40
39
38
37
36
GND
35
HB2
34
GND
GND
33
HB1
SDATA
32
MB5
SCLK
31
GND
VIO
30
VCC2
VBATT
29
VCC1
NC
28
VCC2_2
NC
10
27
GND
NC
11
26
MB4
RFIN_M
12
25
MB3
RFIN_L
13
24
GND
GND
14
23
MB2
GND
15
22
GND
AIROHA
16
17
18
19
20
21
LB5
MB1
AP7219M
LB1
RFIN_H
LB2
GND
42
LB3
LB4
GND
TRX2
Pin Assignment
Top View

Datasheet
Page 6 of 32
CONFIDENTIAL
AP7219M
Pin Name Description

PIN
SIGNAL
DESCRIPTION
RFIN_H
High band input
SDATA
MIPI data bus
SCLK
MIPI clock bus
VIO
MIPI supply
VBATT
Power supply from battery
NC
Float or connect to GND
10
NC
11
NC
12
RFIN_M
Mid band input
13
RFIN_L
Low band input
16
LB4
LB RF output of port4
17
LB3
18
LB2
19
LB1
20
LB5
21
MB1
MB RF output of port1
23
MB2
25
MB3
26
MB4
28
VCC2_2
2
nd
stage PA collector power supply of LB and MB
st
29
VCC1
1 stage PA collector power supply of LB, MB, and HB
30
VCC2
32
MB5
MB RF output of port5 (B34/39)
33
HB1
HB RF output of port1
35
HB2
37
HB3
39
HB4
41
TRX1
HB3 RX
42
TRX2
HB1, HB2, HB4 RX
nd
rd
and 3 stage PA collector power supply of HB
Pads 1, 2, 4, 14, 15, 22, 24, 27, 31, 34, 36, 38, and 40 are GND pads.

Datasheet
Page 7 of 32
CONFIDENTIAL
AP7219M
Function Block Diagram

Datasheet
Page 8 of 32
CONFIDENTIAL
AP7219M
Electrical Characteristics
Absolute Maximum Ratings
AP7219M could be damaged by any stress in excess of the absolute maximum ratings listed below.
ITEM
MIN.
MAX.
VBATT
-0.3 V
5.5 V
VCC1
-0.3 V
5.5 V
VCC2
-0.3 V
5.5 V
VCC2_2
-0.3 V
5.5 V
Power Supply Voltage
VIO
2.2V
SCLK/SDATA
2.2V
RF Input Power
10 dBm
55 C
Storage Temperature
+150 C
Recommended Operating Conditions

Item
Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
VBATT
3.2
3.4
4.2
VCC1
0.5
3.4
4.2
VCC2
0.5
3.4
4.2
VCC2_2
0.5
3.4
4.2
+85
1.95
0.2 x VIO
20
Operating Temperature
MIPI RFFE Supply
MIPI RFFE Signal
VIO
1.65
Low
SCLK/SDATA
High
SCLK/SDATA
0.8 x VIO
1.8
VIO
-20
25
85
Ambient Temperature

Datasheet
Page 9 of 32
1.8
CONFIDENTIAL
AP7219M
Electrical Specification
PARAMETER
CONDITION
LTE
TDD Band 40
Typical values are tested under

VBATT=VCC1=VCC2=VCC2_2=3.4V,
TD-LTE 10MHz 12RB QPSK
o
Modulation, Ta=25 C unless otherwise
specified.
Frequency Range
MIN.
TYP.
2300
Max. Linear Output
MPR = 0
MAX.
UNIT
2400
MHz
dBm
28
Power
Gain
Pout = 28dBm
ACLR E-UTRA
Pout = 28dBm
-35
dB
ACLR1 UTRA
Pout = 28dBm
-36
dB
ACLR2 UTRA
Pout = 28dBm
-40
dB
EVM
Pout = 28dBm
3.5
PAE
Pout = 28dBm, VCC1=VCC2=3.4V
30
Total Supply Current
620
mA
Leakage Current
VCC1=VCC2= VCC2_2=VBATT=4.2V,
Harmonic
-140
dBm/Hz
ISM RX : 2447~2483.5MHz
-106
dBm/Hz
1.8
VSWR
2f0, Po 28dBm
-7
dBm
3f0 , Po 28dBm
-10
dBm
uS
-36
dBm
level of RF
VSWR 6:1, all phase
Po< 28dBm, VSWR 10:1, all phase,
No
time =10s
damage

Datasheet
GPS RX : 1574~1577MHz
Time from DC settled to 90% target
Stability (Spurious)
Ruggedness
uA
VSWR, , Po 28dBm
Input VSWR
dB
10
VIO=0V
Noise Power
RF Rise/Fall Time
29
Page 10 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
LTE
TDD Band 38

o
specified.
Frequency Range
MIN.
TYP.
2570
Max. Linear Output
MPR = 0
MAX.
UNIT
2620
MHz
dBm
28
Power
Gain
Pout = 28dBm
ACLR E-UTRA
Pout = 28dBm
-35
dB
ACLR1 UTRA
Pout = 28dBm
-36
dB
ACLR2 UTRA
Pout = 28dBm
-40
dB
EVM
Pout = 28dBm
3.5
PAE
30
Pout =28dBm, VCC1=VCC2=3.4V
610
mA
Leakage Current
Harmonic
-140
dBm/Hz
ISM RX : 2400~2483.5MHz
-114
dBm/Hz
1.5
VSWR
2f0, Po 28dBm
-7
dBm
3f0 , Po 28dBm
-10
dBm
uS
-36
dBm
level of RF
VSWR 6:1, all phase
No
time =10s
damage

Datasheet
GPS RX : 1574~1577MHz
Ruggedness
uA
VSWR, , Po 28dBm
Input VSWR
dB
10
VIO=0V
Noise Power
RF Rise/Fall Time
29
Page 11 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
LTE
TDD Band 41

o
specified.
Frequency Range
MIN.
TYP.
2496
Max. Linear Output
MPR = 0
MAX.
UNIT
2690
MHz
dBm
28
Power
Gain
Pout = 28dBm
ACLR E-UTRA
Pout = 28dBm
-35
dB
ACLR1 UTRA
Pout = 28dBm
-36
dB
ACLR2 UTRA
Pout = 28dBm
-40
dB
EVM
Pout = 28dBm
3.5
PAE
30
620
mA
Leakage Current
Harmonic
-140
dBm/Hz
ISM RX : 2400~2452MHz
-104
dBm/Hz
1.5
VSWR
2f0, Po 28dBm
-7
dBm
3f0 , Po 28dBm
-10
dBm
uS
-36
dBm
level of RF
VSWR 6:1, all phase
No
time =10s
damage

Datasheet
GPS RX : 1574~1577MHz
Ruggedness
uA
VSWR, , Po 28dBm
Input VSWR
dB
10
VIO=0V
Noise Power
RF Rise/Fall Time
29
Page 12 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
LTE
FDD Band 7

FDD-LTE 10MHz 12RB QPSK
o
specified.
Frequency Range
MIN.
TYP.
2500
Max. Linear Output
HPM
MAX.
UNIT
2570
MHz
dBm
28
Power
Gain
HPM, Pout = 28dBm
ACLR E-UTRA
HPM, Pout = 28dBm
-35
dB
ACLR1 UTRA
HPM, Pout = 28dBm
-36
dB
ACLR2 UTRA
HPM, Pout = 28dBm
-40
dB
EVM
HPM, Pout = 28dBm
3.5
PAE
30
Pout =28dBm, VCC1=VCC2=3.4V
610
mA
Leakage Current
VCC1=VCC2=VCC2_2=VBATT=4.2V,
Harmonic
-125
dBm/Hz
GPS RX : 1574~1577MHz
-140
dBm/Hz
ISM RX : 2400~2452MHz
-108
dBm/Hz
1.5
VSWR
2f0, Po 28dBm
-7
dBm
3f0 , Po 28dBm
-10
dBm
uS
-36
dBm
level of RF
VSWR 6:1, all phase
No
time =10s
damage

Datasheet
RX : 2620~2690MHz
Ruggedness
uA
VSWR, , Po 28dBm
Input VSWR
dB
10
VIO=0V
Noise Power
RF Rise/Fall Time
28
Page 13 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
Band Select
Switch

o
Ta=25 C unless otherwise specified.
Frequency Range
Insertion Loss
VSWR
Isolation
Switch Time

Datasheet
MIN.
TYP.
2300
MAX.
UNIT
2690
MHz
HB3 to TRX1
0.75
dB
HB1 to TRX2
0.75
dB
HB2 to TRX2
0.75
dB
HB4 to TRX2
0.75
dB
All TX port in RX mode
HB2 to HB1
30
dB
HB2 to HB3
30
dB
HB2 to HB4
30
dB
HB3 to TRX1
25
dB
HB3 to TRX2
25
dB
HB1 to TRX1
25
dB
HB1 to TRX2
25
dB
HB4 to TRX1
25
dB
HB4 to TRX2
25
dB
Between any two ports
Page 14 of 32
2.5
us
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
FDD-LTE
Mid Band

FDD-LTE 10MHz 12RB QPSK
o
specified.
MIN.
TYP.
MAX.
UNIT
Band1
1920
1980
MHz
Frequency
Band2
1850
1910
MHz
Range
Band3
1710
1785
MHz
Band4
1710
1755
MHz
Band1
27
dBm
Max. Linear
Band2
27.5
dBm
Output Power
Band3
27.5
dBm
Band4
27
dBm
28
dB
Gain
HPM, Pout = 28dBm
ACLR E-UTRA
HPM, Pout = 28dBm
-36
dB
ACLR1 UTRA
HPM, Pout = 28dBm
-37
dB
ACLR2 UTRA
HPM, Pout = 28dBm
-42
dB
EVM
HPM, Pout = 28dBm
PAE
Pout = 28dBm, VCC1= VCC2_2=3.4V
32
Pout =28dBm, VCC1= VCC2_2=3.4V
570
mA
Leakage Current
Noise Power
Input VSWR
Harmonic
RF Rise/Fall Time
-133
dBm/Hz
B2: fRX=fTX+80MHz
-132
dBm/Hz
B3: fRX=fTX+95MHz
-133
dBm/Hz
B4: fRX=fTX+400MHz
-135
dBm/Hz
VSWR, Po 28dBm
2:1
VSWR
2f0, Po 28dBm
-7
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm
level of RF
VSWR 5:1, all phase
No
time =10s
damage

Datasheet
uA
B1: fRX=fTX+190MHz
Stability
Ruggedness
10
VIO=0V
Page 15 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
WCDMA
Mid Band

o
WCDMA Modulation, Ta=25 C unless
otherwise specified.
MIN.
TYP.
MAX.
UNIT
Band1
1920
1980
MHz
Frequency
Band2
1850
1910
MHz
Range
Band3
1710
1785
MHz
Band4
1710
1755
MHz
Band1
28
dBm
Max. Linear
Band2
28
dBm
Output Power
Band3
28
dBm
Band4
28
dBm
28
dB
Gain
HPM, Pout = 28dBm
ACLR1 5MHz offset
HPM, Pout = 28dBm
-38
dB
ACLR2 10MHz offset
HPM, Pout = 28dBm
-46
dB
EVM
HPM, Pout = 28dBm
PAE
32
570
mA
Leakage Current
Noise Power
Input VSWR
Harmonic
RF Rise/Fall Time
-133
dBm/Hz
B2: fRX=fTX+80MHz
-132.5
dBm/Hz
B3: fRX=fTX+95MHz
-132.5
dBm/Hz
B4: fRX=fTX+400MHz
-135
dBm/Hz
VSWR, Po 28dBm
2:1
VSWR
2f0, Po 28dBm
-7
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm
level of RF
VSWR 5:1, all phase
No
time =10s
damage

Datasheet
uA
B1: fRX=fTX+190MHz
Stability
Ruggedness
10
VIO=0V
Page 16 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
FDD-LTE
Low Band

FDD-LTE 10MHz 12RB QPSK Modulation,
o
Ta=25 C unless otherwise specified.
Frequency
Range
MIN.
TYP.
MAX.
UNIT
Band5
824
849
MHz
Band8
880
915
MHz
Band12
699
716
MHz
Band13
777
787
MHz
Band17
704
716
MHz
Band20
832
862
MHz
Band28
703
748
MHz
Max. Linear Band5,8,13,20

Output
Band12,17,28
Power
28
dBm
27.5
dBm
28
dB
Gain
HPM, Pout = 28dBm
ACLR E-UTRA
HPM, Pout = 28dBm
-35
dB
ACLR1 UTRA
HPM, Pout = 28dBm
-36
dB
ACLR2 UTRA
HPM, Pout = 28dBm
-42
dB
EVM
HPM, Pout = 28dBm
PAE
32
570
mA
Leakage Current
Noise Power
Input VSWR
Harmonic
RF Rise/Fall Time
Stability
Ruggedness

Datasheet
10
VIO=0V
uA
B5: fRX=fTX+45MHz
-133
dBm/Hz
B8: fRX=fTX+45MHz
-133
dBm/Hz
B13: fRX=fTX-31MHz
-132
dBm/Hz
B17: fRX=fTX+30MHz
-130
dBm/Hz
B20: fRX=fTX-41MHz
-133
dBm/Hz
B28: 758~803MHz
-133
dBm/Hz
VSWR, , Po 28dBm
2:1
VSWR
2f0, Po 28dBm
-7
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm

level of RF
VSWR 5:1, all phase
No
time =10s
damage
Page 17 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
WCDMA
Low Band

o
WCDMA Modulation, Ta=25 C unless
MIN.
TYP.
MAX.
UNIT
Frequency
Band5
824
849
MHz
Range
Band8
880
915
MHz
Max. Linear
dBm
Output
Band5,8
28
Power
Gain
HPM, Pout = 28dBm
ACLR1 5MHz offset
HPM, Pout = 28dBm
-38
dB
ACLR2 10MHz offset
HPM, Pout = 28dBm
-46
dB
EVM
HPM, Pout = 28dBm
PAE
32
570
mA
Leakage Current
Noise Power
Input VSWR
Harmonic
RF Rise/Fall Time
Stability
Ruggedness

Datasheet
28
dB
10
VIO=0V
uA
B5: fRX=fTX+45MHz
-133
dBm/Hz
B8: fRX=fTX+45MHz
-133
dBm/Hz
VSWR, , Po 28dBm
2:1
VSWR
2f0, Po 28dBm
-7
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm

level of RF
VSWR 5:1, all phase
No
time =10s
damage
Page 18 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
TD-SCDMA
Band 34/39

VBATT=VCC1=VCC2=VCC2_2=3.4V
o
, TD-SCDMA Modulation, Ta=25 C
unless otherwise specified.
MIN.
TYP.
MAX.
UNIT
Frequency
Band34
2010
2025
MHz
Range
Band39
1880
1920
MHz
Max. Linear
Output
dBm
Band34/39
28
Power
Gain
HPM, Pout = 28dBm
ACLR1 1.6MHz offset
HPM, Pout = 28dBm
-38
dB
ACLR2 3.2MHz offset
HPM, Pout = 28dBm
-48
dB
EVM
HPM, Pout = 28dBm
PAE
Pout = 28dBm, VCC1=VCC2_2=3.4V
28
650
mA
Leakage Current
VSWR, , Po 28dBm
Harmonic
Ruggedness
uA
VSWR
2f0, Po 28dBm
-8
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm
level of RF
VSWR 5:1, all phase
No
time =10s
damage

Datasheet
1.5:1
Stability
dB
10
VIO=0V
Input VSWR
RF Rise/Fall Time
28
Page 19 of 32
CONFIDENTIAL
AP7219M
PARAMETER
CONDITION
TD-LTE
Band 39

VBATT=VCC1=VCC2=VCC2_2=3.4V
o
, TD-LTE Modulation, Ta=25 C unless
Frequency
Range
Max. Linear
Output Power
Band39
MIN.
TYP.
1880
Band39
MAX.
UNIT
1920
MHz
dBm
27
Gain
HPM, Pout = 28dBm
ACLR E-UTRA
HPM, Pout = 28dBm
-35
dB
ACLR1 UTRA
HPM, Pout = 28dBm
-36
dB
ACLR2 UTRA
HPM, Pout = 28dBm
-42
dB
EVM
HPM, Pout = 28dBm
PAE
30
610
mA
Leakage Current
VSWR, , Po 28dBm
Harmonic
Ruggedness
uA
VSWR
2f0, Po 28dBm
-8
dBm
3f0, Po 28dBm
-10
dBm
4f0, Po 28dBm
-20
dBm
uS
-36
dBm
level of RF
VSWR 5:1, all phase
No
time =10s
damage

Datasheet
1.5:1
Stability
dB
10
VIO=0V
Input VSWR
RF Rise/Fall Time
28
Page 20 of 32
CONFIDENTIAL
AP7219M
MIPI Registers
Address
Parameter
Default(Hex)
Reserved[7]
Note
Trigger
Reserved[7] = 0
[6:3] = 0000 (Standby)
[6:3] = 0001 (LB1_TX)
[6:3] = 0010 (LB2_TX)
[6:3] = 0011 (LB3_TX)
[6:3] = 0100 (LB4_TX)
[6:3] = 0101 (LB5_TX)
[6:3] = 0110 (MB1_TX)
PA Band Select[6:3]
0x00
[6:3] = 0111 (MB2_TX)

0x00
[6:3] = 1000 (MB3_TX)
[6:3] = 1001 (MB4_TX)

[6:3] = 1010 (MB5_TX)
[6:3] = 1011 (HB1_TX)
[6:3] = 1100 (HB2_TX)
[6:3] = 1101 (HB3_TX)
[6:3] = 1110 (HB4_TX)
PA_EN[2] = 0 (Standby Mode)
PA_EN[2]
PA_EN[2] = 1 (PA Enable)
Reserved[1:0]
Reserved[1:0] = 00
HB_Bias2[7:4] : 1111 (Maximum bias set)
HB_Bias2[7:4]
0x01
HB_Bias2[7:4] : 0000 (Minimum bias set)

0x00
HB_Bias1[3:0]

Datasheet
Page 21 of 32
CONFIDENTIAL
AP7219M
Address
Parameter
Default(Hex)
Spare Mode[7:4]
Note
Trigger
[7 :4] = 0000 (Spare)
[3:0] = 0000 (switch off)

0x02
HB switch RX
0x00
control [3:0]
[3:0] = 0001 (HB1 to HBRX2)

[3:0] = 0010 (HB2 to HBRX2)
[3:0] = 0011 (HB3 to HBRX1)

[3:0] = 0100 (HB4 to HBRX2)
Reserved[7]
Reserved[7] = 0
Boost Bias[6:4] : 111 (Maximum bias set)
Boost Bias[6:4]
0x03
0x00
HB_Bias3[3:0]

Datasheet
Boost Bias[6:4] : 000 (Minimum bias set)

Page 22 of 32
CONFIDENTIAL
AP7219M
Address
Parameter
Default(Hex)
Note
Trigger
[7] = 1 (Engineering test, Default=1)

[6] = 0 (Engineering test, Default=0)
Programmable
0x0C
mode for MB and LB
0x00
bias
[5] = 0 = Default setting

1= Programmable mode for 0X08, 0X09,
0X0A, 0X0B
[4:0] = 00000 (Spare)
Reserved[7:5]
0x08
Reserved[7:5] = 000
0x00
MB_Bias1[4:0]
Reserved[7:5] = 000
0x00
MB_Bias2[4:0]
0x00
Reserved[7:5] = 000
0x00

Datasheet
LB_Bias1[4:0] : 11111 (Maximum bias set)

LB_Bias1[4:0] : 00000 (Minimum bias set)
Reserved[7:5]
LB_Bias1[4:0]
Reserved[7:5] = 000
LB_Bias1[4:0]
0x0B
MB_Bias2[4:0] : 11111 (Maximum bias set)

MB_Bias2[4:0] : 00000 (Minimum bias set)
Reserved[7:5]
0x0A
MB_Bias1[4:0] : 00000 (Minimum bias set)
Reserved[7:5]
0x09
MB_Bias1[4:0] : 11111 (Maximum bias set)
LB_Bias2[4:0] : 11111 (Maximum bias set)
LB_Bias2[4:0] : 00000 (Minimum bias set)
Page 23 of 32
CONFIDENTIAL
AP7219M
Address
Parameter
Default(Hex)
Note
PM_Trig[7:6] : 00; Normal Operation (Active)
PM_Trig[7:6] : 01; Default Settings (Startup)
PM_Trig[7:6]
PM_Trig[7:6] : 10; Low Power Mode

PM_Trig[7:6] : 11; Reserved
Trig_Mask_2[5] = 0 (Trigger Enable, Default)
Trig_Mask_2[5] = 1; If this bit is set trigger 2 is disabled.
Trig_Mask_2[5]
When disabled writing to a register that is associated to

trigger 2 the data goes directly to the destination register.
Trig_Mask_1[4]

0x1C
0x00

Trig_Mask_0[3]

Trig_2[2] = 0 (Default)
Trig_2[2]
Trig_2[2] = 1; A write of a one to this bit loads trigger 2's

registers.
Trig_1[1]

registers.
Trig_0[0]

registers.
Address
Parameter
Default(Hex)
0x1D
Product_ID
0x0F
Product_ID[7:0] = 00001111
0x1E
Manufacture_ID
0x49
Manufacture_ID[7:0] = 01001001
Spare
0x1F
Manufacture_ID
USID

Datasheet
Note
Spare = 00
0x3F
Manufacture_ID[9:8] = 11
USID = 1111
Page 24 of 32
CONFIDENTIAL
AP7219M
Register Write Command Timing Diagram
Register Read Command Timing Diagram

.

Datasheet
Page 25 of 32
CONFIDENTIAL
AP7219M
Package Dimension

Datasheet
Page 26 of 32
CONFIDENTIAL
AP7219M

Datasheet
Page 27 of 32
CONFIDENTIAL
AP7219M

Datasheet
Page 28 of 32
CONFIDENTIAL
AP7219M
Evaluation Board
1
1
11
13
15
17
11
13
15
19
P5
17
19
AP7219M evaluation board is an interfacing circuit for testing and analysis, the
evaluation board schematic and drawing are included for preliminary design reference.
In AP7219M schematic, R1 is to connect VCC1 and VCC2 net and the default value
is 0ohm. R2 is to connect VCC1 and VCC2_2 net and the default value is 0ohm. Single
supply voltage source is required on this test condition.
2
2
4
4
6
6
12
10
10
14
12
16
SDATA
14
18
16
20
C1
10uF
SCLK
C2
220pF
VIO
VBATT
C3
22pF
18
20
HEADER10X2-2.54
R1
R2
NC
NC
C4
C7
C15
10uF
10uF
10uF
C5
C8
C14
J17
C9
220pF
C13
22pF
J16
SMA-H
22pF
1
37
GND
G
3
G
G
G
3
24
MB2
23
MB2
SN
MB3
25
MB4
26
GND
GND
J12
SMA-H
27
J11
SMA-H
22
GND
AP7219PCB
SN
LB4
J10
SMA-H
MB1
LB5
1
J4
SMA-H
J5
SMA-H
J6
SMA-H
G
G
J7
SMA-H
J8
SMA-H
SN
SN
SN
SN
1
3
SN
SN
SN
SMA-H
G
G
LB1
LB2
LB3
SN
J3
RFIN_L
HB3
38
GND
HB4
39
40
GND
TRX1
TRX2
MB3
43
15
MB4
RFIN_M
28
SN
14
SMA-H
NC
SN
13
GND
SN
12
RFIN_L
RFIN_M
41
2
11
SN
VCC2_2
NC
29
VCC1
NC
MB1
J2
VBATT
21
9
10
30
VCC2
AP7219
LB5
LB1
VBATT
C10
1000pF
VIO
20
31
GND
LB2
VIO
J13
SMA-H
B34_39
32
B34_39
SCLK
19
C11
NC
SDATA
18
LB3
SCLK
J14
SMA-H
HB1
33
HB1
17
C12
NC
34
GND
GND
HB2
35
HB2
RFIN_H
LB4
SDATA
SMA-H
J15
SMA-H
36
GND
GND
16
GND
GND
2
RFIN_H
42
U1
1
J1
HB3
TRX2
SMA-H
SN
SN
220pF
C6
22pF
SMA-H
SN
220pF
TRX1
J19
VCC2_2
SMA-H
SN
VCC1
VCC2
J18
HB4
SN
J9
SMA-H
Schematic of AP7219M EVB

Pin Definition of EVB Interface
Pin Number
19
17
15
13
11
Pin Name
VBATT
GND
GND
GND
GND
VCC2_2
VCC2_2
VCC2_2
VCC2_2
NC
Pin Number
20
18
16
14
12
10
Pin Name
VIO
SCLK
SDATA
VCC2
VCC2
VCC1
VCC1
VCC2_2
VCC2_2
NC

Datasheet
Page 29 of 32
CONFIDENTIAL
AP7219M
AP7219M EVB
Bill of Material of AP7219M EVB
Component
Description
C3, C6, C9, C13
Capacitor, Ceramic, 22p, COG , +- 5%
C2, C5, C8, C14
Capacitor, Ceramic, 220p, X7R, +- 10%
C1, C4, C7, C15
Capacitor, Ceramic, 10u, X7R, +-10%.
C10
Capacitor, Ceramic, 1000p, X7R, +- 10%
R1, R2
C11, C12
NC
The AP7219M output power is up to 28dBm and the executing frequency is from
700 MHz to 2690 MHz range for 3G and 4G multi-band. The PCB design must be treated
carefully to achieve best RF performance. There are several PCB layout guide-lines and
rules and focus on DC path, thermal conductivity, RF signal.

Datasheet
Page 30 of 32
CONFIDENTIAL
AP7219M
1. The layout rule and guideline for DC path.
The VBATT and VCC1/VCC2/VCC2_2 is DC power trace for the amplifier, it is
important to put suitable bypass capacitors to improve stability and TX quality of
amplifier. The capacitor on VCC2 trace is recommended of C4, C5, and C6 is 10uF,
220pF, and 22pF respectively, and the distance between capacitors and DUT
should be keep as short as possible, especially the 22pF capacitor is required to
close to DUT. Another capacitor on VBATT, VCC1 and VCC2_2 trace also need to
be placed in the same way.
2. The layout rule and guideline for thermal conductivity

Poor thermal conductivity will degrade RF performance; it is suggested to place
thermal Vias under the amplifier as many as possible to improve thermal
conductivity.

Datasheet
Page 31 of 32
CONFIDENTIAL
AP7219M
3. The layout rule and guideline for RF signal
All of RF signals trace which includes RF output trace, RF input trace impedance
has to be 50 ohm, and AP7219M is well matched to 50 for each RF ports; it
doesnt need any external matching components. But it is suggested to reserve
output matching network components in case mismatch cause by interconnection. It
is suggested to place these components close to DUT.

Datasheet
Page 32 of 32
CONFIDENTIAL

Power Amplifier (3G4G) AP7219M Data Sheet - V1.0

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AP7219M

WCDMA/TD-SCDMA/LTE TDD and FDD

Confidential for Gionee

This document is commercially confidential and must NOT be disclosed to

third parties without prior consent.

AP7219M Power Amplifier Module

Confidential for Gionee

AP7219M Power Amplifier Module

Confidential for Gionee

Revision History .................................................................................................... 3

Electrical Characteristics ........................................................................................ 9

Electrical Specification .........................................................................................10

AP7219M Power Amplifier Module

Confidential for Gionee

WCDMA Bands I, II, III, IV, V, VIII

4mm x 6.8mm x 0.86mm

AP7219M Power Amplifier Module

Confidential for Gionee

AP7219M Power Amplifier Module

Confidential for Gionee

Pin Name Description

High band input

MIPI data bus

MIPI clock bus

Power supply from battery

Float or connect to GND

Float or connect to GND

Float or connect to GND

Mid band input

Low band input

stage PA collector power supply of LB and MB

1 stage PA collector power supply of LB, MB, and HB

MB RF output of port5 (B34/39)

HB1, HB2, HB4 RX

and 3 stage PA collector power supply of HB

AP7219M Power Amplifier Module

Confidential for Gionee

Function Block Diagram

AP7219M Power Amplifier Module

Confidential for Gionee

Power Supply Voltage

Recommended Operating Conditions

AP7219M Power Amplifier Module

Confidential for Gionee

Typical values are tested under

Max. Linear Output

Pout = 28dBm, VCC1=VCC2=3.4V

Total Supply Current

Pout = 28dBm, VCC1=VCC2=3.4V

AP7219M Power Amplifier Module

Confidential for Gionee

Time from DC settled to 90% target

Typical values are tested under

Max. Linear Output

Pout = 28dBm, VCC1=VCC2=3.4V

Total Supply Current

Pout =28dBm, VCC1=VCC2=3.4V

AP7219M Power Amplifier Module

Confidential for Gionee

Time from DC settled to 90% target

Typical values are tested under

Max. Linear Output

Pout = 28dBm, VCC1=VCC2=3.4V