Electronics-Telecommunication Paper 1 Objective

ACE Engg.
Academy
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01.
Which
one
of
experimental
the
following
confirmation
of

: 2 :

IES_2016_Paper1 (SetA)
helps
Hence a plot of in Vs (1/T) must be a
the
straight line.
Crystalline state of matter?
Hence the dependence of conductivity of an
(a) Shock compression
intrinsic semi conductor with temperature is
(b) Photo emission
exponential.
(c) Conductivity measurements

(d) X-ray diffraction
03. Consider the following statements pertaining
01. Ans: (d)
to the resistance of a conductor:
Sol: The crystalline state or the crystal structure
1. Resistance can be simply defined as the
of any materials is determined only by x-ray
ratio of voltage across the conductor to
diffraction method.
the current through the conductor. This

is, in fact, Georg Ohms law
02. The
electrical
conductivity
of
pure
2. Resistance is a function of voltage and
semiconductor is :
current
(a) Proportional to temperature
3. Resistance is a function of conductor
(b) Increases exponentially with temperature
geometry and its conductivity
(c)Decreases exponentially with temperature
Which of the above statements are correct?
(d) Not altered with temperature
(a) 1 and 2 only
(b) 2 and 3 only
(c) 1 and 3 only
(d) 1, 2 and 3
02. Ans: (b)

Sol: The
dependence
of
the
electrical
conductivity of a pure semiconductor on

temperature is given by
= Ce
E g / 2 kT
03. Ans: (c)

Sol: When the ends of a conductor are subjected
to a potential difference, a current flows
through the conductor. The current through
the
conductor
increases
linearly
on
increasing the voltage.

A plot of the voltage against current is a
1/T
Or
straight line. Thus the current I is directly

proportional to the voltage V.
Taking log on both sides,
IV
In = (Eg/2k) (1/T) + constant (ln (C)).
V = IR. R is called the resistance.
ACE Engg. Academy
or
I = (V /R)
Hence
occurs
as

: 3 :
constant
of

E & T Engineering
05. Which one of the following statements is
proportionality. It does not depend upon I or
correct?
V. It depends only upon the dimensions of
(a) For insulators the band-gap is narrow as
the conductor and the material of the
compared to semiconductors
conductor as R = (l/A). Where is called
(b) For insulators the band-gap is relatively
the resistivity of the material of the
wide whereas for semiconductors it is
conductor, l-length of the conductor. A area
narrow
of cross section of the conductor.
(c) The band-gap is narrow in width for both

the insulators and conductors
04. The ratio of ionic radii of Cations i.e, rc and
(d) The band-gap is equally wide for both

conductors and semiconductors
that of Anions i.e. rA for stable and unstable

ceramic crystal structure, is :
05. Ans: (b)
(a) Less than unity
Sol: According to the band theory of solids, in
(b) Greater than unity
the case of conductors the valence band and
(c) Unity
conduction band overlap in a semiconductor
(d) Either lesser or greater than unity
there is a small gap between the valence
04. Ans: (a)
band and conduction band. In the case of
Sol: Ceramic crystals are mostly ionic. The ionic
insulators, there is large gap between the
bond is formed by the transfer of the
two bands.
electron. The one which loses an electron

and becomes positively charged is called the
06. In
an
extrinsic
semiconductor
the
cation. Due to the excess number of protons
conductivity significantly depends upon:
the attractive force on electrons is more and
(a) Majority charge carriers generated due to
hence the radius of cation is smaller than the

neutral atom. Similarly the one which gains
that electron becomes negatively charged
and is called the anion. Hence the ratio of
the cation radius to that of anion radius is
less than unity.
impurity doping
(b) Minority charge carriers generated due to
thermal agitation
(c) Majority charge carriers generated due to
thermal agitation
(d) Minority charge carriers generated due to
impurity doping
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: 4 :

06. Ans: (a)
08. Ans: (a)
Sol: In an extrinsic semiconductor, majority
Sol: The mechanical deformation produced as a
carrier concentration is very large, almost
result of electric field in a material is called
10
10 times the minority carrier concentration
Electrostriction. It is to be distinguished
due to doping. Hence the conductivity is due
from piezoelectric effect. In electrostriction,
to the majority carriers only. Charge carriers
the strain E2. In piezoelectric effect, the
generated due to thermal agitation is very
strain E. Hence reversing the electric
negligible in comparison to doping.
field changes compression to elongation in

piezoelectric whereas it is not so in
07. Necessary
condition
for
photo-electric
electrostriction.
emission is:
(a) h e
(b) h mc
(c) he2
(d) h
1
mc
2
09. In ferromagnetic materials, the net magnetic

moment created due to magnetization by an
applied field is :
07. Ans: (a)
(a) Normal to the applied field
Sol: According to Einsteins photo electric
(b) Adds to the applied field
equation, h = e + kinetic energy of
(c) In line with magneto motive force
electron emitted.
(d) Substracts from the applied field
is called the stopping potential and e is
09. Ans: (b)
the work function of the conductor. Hence
Sol: A ferromagnet contains a large number of
for photo electric emission, h must be
domains, with each domain having a large
greater than or equal to e.
magnetic moment. On the application of

magnetic field the domain start aligning in
08. In some substances when an electric field is
the direction of magnetic field and hence the
applied the substance becomes polarized.
field due to the magnetization adds to the
The electrons and nucleii assume new
applied field. This is the reason for the very
geometrical positions and the mechanical
large susceptibility of ferromagnets.
dimensions are altered. This phenomenon is

called:
(a) Electrostriction
(b) Hall-Effect
(c) Polarization
(d) Magnetization
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: 5 :
10. At what temperatures domains lose their

E & T Engineering
12. In a superconducting magnet, wires of
ferromagnetic properties?
superconducting material are embedded in
(a) Above ferromagnetic Curie temperature
the thick copper matrix, because while the
(b) Below paramagnetic Curie temperature
material is in the superconducting state:
(c) Above 4 K
(a) The leakage current passes through

copper part
(d) At room temperature
(b) Copper part helps in conducting heat
10. Ans: (a)
away from the superconductor
Sol: On increasing the temperature the domains
get
into
random
orientation
(c) Copper part helps in overcoming the
and
mechanical stress
magnetization decreases. At a particular
(d) Copper acts as an insulating cover for
temperature called the Curie temperature,
superconductor
the ferromagnet transforms to a paramagnet.
12. Ans: (c)
11. Which of the following materials does not
Sol:
typical
cable
for
superconducting
have paramagnetic properties?
magnetic coil consists of a large number of
1. Rare earth elements (with incomplete
strands of 20m size incorporated in a
shell)
copper matrix. This design ensures that the
2. Transition elements
mechanical stability of the coil. Further it
3. Magnesium oxide
can provide current carrying facility in the
Select the correct answer from the codes
event of the magnet transform from
given below:
superconducting to normal state suddenly.
(a) 1 only
(b) 2 only
(c) 3 only
(d) 1 and 2
13. The crystal structure of some Ceramic
11. Ans: (c)
materials may be thought of being composed
Sol: Paramagnetism is due to the presence of one
of electrically charged Cations and Anions,
or two unpaired electrons in the outer most
instead of Atoms, and as such:
orbital. This can occur in the case of rare
(a) The Cations are negatively charged,
earth elements with incomplete shell and in
because they have given up their
transition
valence electrons to Anions which are
elements.
Hence
Oxide cannot be paramagnetic.
ACE Engg. Academy
Magnesium
positively charged.

: 6 :
(b) The Cations are positively charged,

13. Ans: (b)
because they have given up their
Sol: An atom is always neutral. As explained in
valence electrons to Anions which are
the question number 4, a cation is formed by
negatively charged.
the loss of the electron by one atom and
(c) The Cations are positively charged,
hence positively charged and the anion is
because they have added one electron
formed by accepting that electron and hence
to their valence electrons borrowing
negatively charged.
from Anions which are negatively

charged.
(d) The Cations are negatively charged, as
they are non-metallic whereas Anions
are positively charged being metallic.
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: 7 :
14. Manganin alloy used for making resistors

E & T Engineering
16. A Ge sample at room temperature has
for laboratory instruments contains:
intrinsic carrier concentration,
(a) Copper, Aluminimum and Manganese
ni = 1.5 1013 cm-3 and is uniformly doped
(b) Copper, Nickel and Manganese
with acceptor of 3 1016 cm-3 and donor of
(c) Aluminium, Nickel and Manganese
2.5 1015 cm-3. Then, the minority charge
(d) Chromium, Nickel and Manganese
carrier concentration is:
14. Ans: (b)

Sol: Manganin is an alloy of 86% Cu, 2% Ni,
12% Mn.
15. A rolled-paper capacitor of value 0.02 F is
to be constructed using two strips of
(a) 0.918 1010 cm-3
(b) 0.818 1010 cm-3
(c) 0.918 1012 cm-3
(d) 0.818 1012 cm-3
16. Ans: (b)

Sol: Intrinsic carrier concentration ,
aluminium of width 6 cm, and, wax
ni = 1.51013/cm3
impregnated paper of thickness 0.06 mm
Acceptor concentration NA= 31016/cm3
whose relative permittivity is 3. The length
Donor concentration ND = 2.51015/cm3
of foil strips should be:
NA ND = 31016 2.51015
(a) 0.3765 m
(b) 0.4765 m
(c) 0.5765 m
(d) 0.7765 m
15. Ans: (a)
= 2.751016
Hence it is a p-type semiconductor
2
N ND
N ND
2
p= A
A
ni
2
2
Sol: C = 0.02 F
w = 6 cm
p = 2.751016/cm3
d = 0.06 mm
According to Mass Action Law,
r = 3
For rolled - paper capacitor
2A
Cd
C
, A
d
2
0.02 106 0.06 103
L w
2 3 8.854 1012
0.02 106 0.06 103
L
2 3 8.854 1012 6 10 2
np = n i2
n=
n i2
p
1.5 10
n=
13 2
2.75 1016
n = 0.8181010/cm3
L = 0.3764 m
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: 8 :
17. Assume that the values of mobility of holes

and that of electrons in an intrinsic

(a)
3
2
(b)
semiconductor are equal and the values of
18. Ans: (c)
conductivity and intrinsic electron density
Sol: Sample A
are 2.32/m and 2.51019/m3 respectively.

Then, the mobility of electron/hole is
approximately:
(a) 0.3 m2/Vs
(b) 0.5 m2/Vs
(c) 0.7m2/Vs
(d) 0.9 m2/Vs
19
(d)
1
2
Sample B
ND= 1018 atoms/cm3
A N A q p
B N D q n
Sol: n = p
Intrinsic electron concentration
1
3
n
3
p
i = 2.32( m)1
(c)
NA=1018 atoms/cm3
17. Ans: (a)
Intrinsic semiconductor conductivity
2
3
p
n
1
3
A
1
=
B
3
19. The Hall-coefficient of a specimen of doped
ni = 2.510 /cm
semiconductor is 3.0610-4 m3C-1 and the
i = niq(n+p)
resistivity of the specimen is 6.93 10-3 m.
= niq(2n)
The majority carrier mobility will be:

19
19
2.32 = 2.510 1.610 2n

n =
2.32
19
2.5 10 1.6 10 19 2
n = 0.29 m2/V-sec
n or p = 0.29 m2/V-sec
(a) 0.014 m2V-1s-1

(b) 0.024 m2V-1s-1
(c) 0.034 m2V-1s-1
(d) 0.044 m2V-1s-1
19. Ans: (d)
Sol: Hall-coefficient RH = 3.06104m3c1
18. A silicon sample A is doped with 1018

3
atom/cm
of Boron and another silicon
sample B of identical dimensions is doped

with 1018 atom/cm3 of Phosphorous. If the
ratio of electron to hole mobility is 3, then
the ratio of conductivity of the sample A to
Resistivity =
1
= 6.93103m
= RH
=
3.06 10 4
6.93 10 3
= 0.04415 m2/V-sec
that B is:
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20. Doped
silicon
has

: 9 :
Hall-coefficient
of
3.68 10-4 m3C-1 and then its carrier

E & T Engineering
21. Ans: (c)

Sol:
50
concentration value is :
(a) 2.0 1022 m-3
-22
(b) 2.0 10
(c) 0.2 1022 m-3

-22
50
10V
V = 10V
-3
A I
SC I
-3
(d) 0.2 10 m
Diode current I
20. Ans: (a)
When diode (FB) Short circuit
Sol: Hall-coefficient RH=3.68104 m3C1
I=
RH =
1
1
or
nq
pq
V 10
0.2Amps
50 50
I = 200103 = 200mA
Carrier concentration (n or p) =
1
R Hq
4
3.68 10 1.6 1019
= 1.6981022
22. What is the output voltage V0 for the circuit

shown below assuming an ideal diode?
+ 5V
2k
1V
V0
D
= 1.71022
3k
Carrier concentration (n or p) 21022/cm3
3V
21. What is the value of current I through the
(a)
18
V
5
(b)
18
V
5
(c)
13
V
5
(d)
13
V
5
ideal diode in the circuit ?

50
V = 10V
A I
22. Ans: (a)
Sol: The output voltage Vo

B
(a) 100 mA
(b) 150 mA
(c) 200 mA
(d) 250 mA
5V
2k
1V
Vo
D
3k
Vo
3V
ACE Engg. Academy

: 10 :

Diode is Ideal then according to current

+VCC
direction it acts as short circuit

5V
2k
RC
RB
1V
3k
Vo
3V
I
The transistor is operating in:
V0 = I (3k)3(1)
By KVL, I
Vo =
(a) Saturation
1
5 3 1
I
2k 3k
5k
(b) Cut-off
(c) Normal active
3k
18
3 volts
5k
5
23. In a semiconductor diode, cut-in voltage is
(d) Reverse active

24. Ans: (c)
Sol:
the voltage:
(a) upto which the current is zero
IB
(b) upto which the current is very small
RC
(c) at which the current is 10% of the

maximum rated current
+ VCC
IE
RB
IC
(d) at which depletion layer is formed
IC
2
IB
23. Ans: (b)
Apply KVL to loop-(1)
Sol: Cut-in, offset or turn-on voltage V is the
15200103IB0.7 = 0
voltage, below which the current is small

(less than 1 percent of rated current).
VCC = 15V
VBE(act)= 0.7V
RB=200k
RC = 1k
IB =
14.3
200 103
IB = 71.5106A IB = 71.5A
24. A transistor circuit is shown in the figure.
IC = IB
Assume = 100, RB = 200 k, RC = 1k,
IC = 10071.5 106 IC = 7.15mA
VCC = 15 V, VBE act = 0.7 V, VBE sat = 0.8 V,
Apply KVL to loop- (2)
VCE sat = 0.2 V, VCE act 0.2V.
15 ICRC VCE = 0
ACE Engg. Academy
VCE = 15 ICRC

: 11 :
= 15 7.151031103

E & T Engineering
26. The stability factor S in a bipolar junction
VCE = 7.85V
transistor is:
Since VCE(active) > VCE(sat)
(a)
The transistor is in normal active mode only.

25. The position of the intrinsic Fermi level of
an undoped semiconductor (EFi) is given
by :
(a)
(d)
E C E V kT N V
ln
2
2
NC
(d)
E C E V kT N V
ln
2
2
NC
Sol: S =
25. Ans: (c)
I C
with and VBE constant
I CO
Consider the collector current equation of a
Sol: The position of the intrinsic Fermi level of
an undoped semiconductor is given by

E C E V KT N C
ln
2
2
NV
E E V KT N V
ln
C
2
2 N C
E C E V KT N V
ln
2
2
NC
BJT in CE configuration:
IC = IB+(1+) ICO (1)
Differentiating equation (1) with respect to
IC
E E V KT
1
C
ln
NV
2
2
NC
EFi
dI B
1
dI C
26. Ans: (a)
E C E V kT N V
ln
2
2
NC
EFi
1 dI B
(b)
1
1 dI C
dI
(c) (1 ) 1 B
dIC
E E V kT N V
(b) C
ln
2
2
NC
(c)
1
dI
1 B
dI C
1=
1
I CO
I C
ACE Engg. Academy
I
I B
(1 ) CO
I C
I C
I
1 B
I C
1
IC
ICO
I C
I CO
1
I
1 B
I C
1
I
1 B
IC

: 12 :
27. The leakage current in an NPN transistor is
represented by :
(a) Holes from base to emitter
(a)
(b) Electrons from collector to base

from
x(t)
2
(b)
x(t)
(c) Holes from collector to base

carriers

29. The signal x(t) = u(t+2) 2u(t) + u(t 2) is
due to the flow of:
(d) Minority
emitter
to
collector
27. Ans: (c)
1
1
2 1
(c)
x(t)
28. In Early effect:

(a) Increase in magnitude of Collector
voltage increases space charge width at
(d)
x(t)
1
0
the input junction of a BJT

(b) Increase in magnitude of Emitter-Base
voltage increases space charge width of
29. Ans: (b)

Sol: x(t) = u(t + 2) 2 u(t) + u(t 2)
output junction of a BJT

u(t+2)
(c) Increase in magnitude of Collector


(d) Decrease in magnitude of Emitter-Base
0
2u(t)

0
u(t2)
1
28. Ans: (c)

Sol: Output junction is C-B junction which is
always Reverse Bias and by increasing the
x(t)
magnitude of Reverse Bias voltage depletion
ACE Engg. Academy
layer width at Collector Base junction

increases.
2
2
0
1

: 13 :
30. The figure shown represent:
Gate

E & T Engineering
(a) 16m and 66 k
Drain
(b) 18 m and 33 k
Substrate
(c) 16m and 33 k

(d) 18m and 66 k
Source
31. Ans: (a)
(a) n-channel MOSFET
Sol:
(b) Enhanced-mode E-MOSFET

R
(c) p-Channel MOSFET
ID
(d) J-FET
30. Ans: (a)
9V
Sol:
p-Channel MOSFET:
n-Channel MOSFET:
Drain
Gate
Drain
Gate
B
Source
Since Gate and Drain are short, MOSFET is

in saturation region.
ID =
Source
and VGS = VDS = 2.4V
31. The PMOSFET circuit shown in the figure
1
W
2.4 (1.4) 2
0.1 10 3 25 10 6
6
2
2 10
has VTP = 1.4V , K P = 25A/V2, L = 2m,

= 0. If IDS = 0.1mA and VDS = 2.4V
then the width of channel W and R are
respectively:
1
W
k n
(VGS VT ) 2
2
L
0.4 103
16m
25
Apply KVL to the circuit

9 + VGS IDR = 0
9 + (2.4) 0.1 103 R = 0
+9 V
R=
9 2.4
0.1 10 3
6.6
0.1 10 3
R 66k
ACE Engg. Academy

: 14 :
32. Maximum energy of electrons liberated

photoelectrically is:
(a) Proportional
to

32. Ans: (b)

Sol: The Einsteins photo electric equation, the
light
intensity
and
kinetic energy of the emitted photo electron
independent of frequency of the light
depends directly upon the frequency of the
(b) Independent of light intensity and varies
incident light and is independent of the

intensity.
linearly with frequency of the light

(c) Proportional to both, light intensity and
frequency of the light
(d) Independent
of
light
intensity
and
inversely proportional to frequency of

the light
ACE Engg. Academy

: 15 :
33. The response of a Gaussian random process

E & T Engineering
(a) Linear
applied to a stable linear system is:
(b) Sometimes linear
1. A Gaussian random process
(c) Non-linear
2. Not a Gaussian random process
(d) Sometimes non-linear
3. Completely specified by its mean and

auto-covariance functions
35. Ans: (b & d)

Sol: The system some times may satisfy (or) may
Which of the above statements is/are correct
not satisfy the scaling operation. So system
is may be linear (or) may be Non-linear.
(a) 1 only
36. Consider an ideal low pass filter. Such a
(b) 2 only
discrete-time system is:
(c) 2 and 3
(a) always realizable physically
(d) 1 and 3
(b) never realizable physically
33. Ans: (d)
(c) a non linear system
Sol: my = mx H(0)
(d) a linear, causal system

36. Ans: (b)
34. Consider a system, which computes the

MEDIAN of signal values in a window of
Sol: The frequency response of Ideal low pass
filter is
size N. Such a discrete time system is:
H()
(a) Linear
(b) Non-linear
c
(c) Sometimes linear
(d) Sometimes non-linear

34. Ans: (b)
The impulse response of Ideal low pass filter
Sol: Median is a non linear operator
is
35. Consider a discrete time system which
h(t)
------
-----0
satisfies the additivity property, i.e., if the
output for u1[n] is y1[n] and that for u2[n]is
h(t) 0, t < 0
y2[n], then output for u1[n]+ u2[n] is y1[n] +
So non causal system, never realizable
y2[n]. Such a system is:
physically.
ACE Engg. Academy

: 16 :
37. The result of h(2t)*(tt0) (* denotes

convolution and (.) denotes the Dirac
delta function) is:

39. The complex exponential power form of

Fourier series of x(t) is:
j
2
.kt
T0
(b) h(2t02t)
If x(t) =
(c) h(2t2t0)
is :
(d) h(2t+2t0)
(a) 1(1)k
(b) 1+(1)k
(c) 1
(d) 1
x(t) =
(a) h(2t2t0)
37. Ans: (a)
a k .e
( t b) , then the value of ak
39. Ans: (c)
Sol: x(t) * (t t0) = x(t t0)
h(2t) * (t t0) = h (2(tt0)) = h(2t 2t0)
Sol: x t
t b
x(t)
38. A ray of light incident on a glass slab (of
(t)
refractive index 1.5) with an angle , then

4
----
----
the value of sine of angle of refraction is:
2 1 0
1
(a)
2
1
ak
T0
3
(b)
2
2
(c)
3
(d)
38. Ans: (c)
xt e
2
kt
T0
ta
ak = 1
From snells law
sin i
n
2 r2 2
1
r1
sin t
n1
40. Laplace transform of the function v(t) shown

in the figure is :
v(t)
sin / 4 1.5
sin t
1
sin t
t a T0
sin t
j kt
1
t .e T0
10
Sol: n r 1.5
1
sin / 4
1.5
2
3
ACE Engg. Academy
(a) s2[1es]
(c)
1
[1 e s ]
2
s
(b) s2[1es]
(d)
1
[1 e s ]
2
s

: 17 :
A discrete time complex exponential is
v(t)
periodic if
0
1
is a irrational number, so non
2 2
x(t) = r(t) r(t 1)
periodic
1
s2
r t 1
Xs
0
is a rational number. But
2
given 0 = 1
r t

E & T Engineering
Sol: 0 = 1
40. Ans: (d)

Sol:
42. Consider the following transforms:
es
s2
1. Fourier transform
1
1 es
2
s
2. Laplace transform
Which of the above transforms is/are used in
signal processing ?
41. In a discrete-time complex exponential

sequence of frequency 0 = 1, the sequence
is :
(a) 1only
(b) 2 only
(c) Both 1 and 2
(d) Neither 1 nor 2
42. Ans: (c)
1. Periodic with period
2
0
Sol: Both Fourier transform
and Laplace
transform is used. Fourier transform is used
2. Non periodic
to find the spectrum, Laplace transform is
3. Periodic for some value of period N
used in the conversion of analog filter to

digital filter.
Which of the above statements is/are

correct?
43. The varactor diode has a voltage-dependent:
(a) 1only
1. Resistance
(b) 2 only
2. Capacitance
(c) 3only
3. Inductance
(d) 1 and 3
Which of the above is/are correct ?
41. Ans: (b)
ACE Engg. Academy
(a) 1 only
(b) 2 only
(c) 3 only
(d) 1 and 3

: 18 :

43. Ans: (b)
45. Ans: (d)
Sol: A varactor diode is also called variable
Sol: For a BJT,
capacitance diode by varying the RB

voltage, we can change the junction
I
I
I
= PC , PC , PE
IE
I PE
IE
capacitance.
Where is large signal current gain.
44. The impulse response for the discrete-time

system:
y[n] = 0.24 (x[n]+x[n1]+x[n2]+x[n3])
is given by
(a) 0 for 0 n 3 and 0.24 otherwise
(b) 0.24 for 0 n 3 and 0 otherwise
(c) 0.24 for n = 0 to n =
46. Consider a two-sided discrete-time signal

(neither left sided, nor right sided). The
region of convergence (ROC) of the Ztransform of the sequence is:
1. All region of z-plane outside a unit circle
(in z-plane)
2. All region of z-plane inside a unit circle
(d) 0 for n = 0 to n =
(in z-plane)
44. Ans: (b)
3. Ring in z-plane
Sol: y(n) = 0.24 (x[n]+x[n1]+x[n2]+x[n3])

1
Y(z) = 0.24 [X(z) + z X(z) +z X(z)

3
+ z X(z)]
1
H(z) = 0.24 [1 +z + z +z ]
h(n) = 0.24 (n) + 0.24 (n1) + 0.24 (n2)
+ 0.24(n3)
h(n) = [0.24,0.24,0.24,0.24]
h(n) = 0.24
0n3
otherwise
45. The product of emitter efficiency () and

Base transport factor (*) for a BJT is equal
to:
Which of the above is/are correct ?

(a) 1only
(b) 2 only
(c) 3 only
(d) 1 and 3
46. Ans: (c)

Sol: For example
x(n) = (1/2)n u(n) + (2)nu(n1)

ROC = (|z|>1/2) (|z| < 2)
1
| z | 2 ,
2
It is a ring in z-plane
Im{z}
(a) Small signal current gain

(b) High frequency current gain
2
1/2
Re{z}
(c) Power loss in the BJT

(d) Large-signal current gain
ACE Engg. Academy
ACE Engg. Academy

: 19 :

E & T Engineering

: 20 :
47. When is a function f(n) said to be left sided ?

(a) f(n) = 0 for n < 0

u(n)u(n 1) = (n)
y(n) = x(n) x(n 1)
(b) f(n) < 0 for n > 0
Now x(n) = nu(n)
(c) f(n) = 0 for n > n0
y(n) = nu(n)(n 1) u (n 1)
(d) f(n) = for n < n0
y(n) = n u(n) n u(n1) + u(n1)
(n0 Positive or negative integer)
y(n) = n (n) + u(n 1) = 0 + u (n 1)

y (n) = u(n 1)
47. Ans: (c)

Sol: f(n) = 0, for n > n0
50. Consider a discrete-random variable z

48. Z-transform deals with discrete time systems
assuming
finitely
many
values.
The
for their:
cumulative distribution function, Fz(Z) has
1. Transient behavior
the following properties:
2. Steady-state behavior
1.
Which of the above behaviours is/are

correct?
(a) 1only
(b) 2 only
(c) Both 1 and 2
(d) Neither 1 nor 2
48. Ans: (c)

Sol: Solving the difference equation with initial
conditions using z-transform gives transient

response and steady state response.
49. The response of a linear, time-invariant
discrete-time system to a unit step input u[n]
Fz (z)dz 1
2. Fz(z) is non-decreasing with finitely

many jump-discontinuities
3. Fz(z) is negative and non-decreasing
Which of the above properties is/are correct ?
(a) 1 only
(b) 2 only
(c) 3 only
(d) 2 and 3
50. Ans: (b)
51. Consider a random process given by :

x(t) = Acos(2fct+), where A is a Rayleigh
distributed random variable and is
is [n]. The system response to a ramp input
uniformly distributed in [0, 2]. A and are
n u[n] would be:
independent. For any time t, the probability
(a) [n1]
(b) u[n1]
(c) n [n1]
(d) n u[n1]
49. Ans: (b)

Sol: x(n) = u(n), y(n) = (n)
We know that
ACE Engg. Academy
density function (PDF) of x(t) is:

(a) Gaussian
(b) Rayleigh
(c) Rician
(d) Uniform in [A, A]

: 21 :

E & T Engineering
51. Ans: (a)
What is the transfer function H(s) of the
Sol: The envelope of Gaussian random variable
system ?
is Rayeigh and phase is uniform.

52. Poissons equation is derived with the
following assumption about the medium.
(a) C (sI A)1B
(b) B (sI A)1C
(c) C (sI A)B
(d) B (sI A)C
53. Ans: (a)

Sol: C[SI A]1 B
The medium is:

(a) Non-homogeneous and isotropic
(b) Non-homogeneous and non-isotropic
54. x(t) =
1
2
N
k 1 cos ko t ,
To
To
is
the
(c) Homogeneous and non-isotropic
combined trigonometric form of Fourier
(d) Homogeneous and isotropic
series for:
52. Ans: (d)
(a) Half rectified wave
Sol: .D v
(b) Saw-tooth wave

(c) Rectangular wave
D E
(d) Impulse train
.E v
If the medium is homogenious and isotropic

then only
Sol: DC, cosine terms are exist, sine terms are
.E v
zero. So it is a even signal

Consider periodic impulse train
E = V
(V) =
2V
54. Ans: (d)
(t)
--------
-------2T0 T0 0 T0 2T0
53. The state space representation of a linear

time invariant system is:
X(t) AX(t) Bu(t)
1
a0
T0
t a T0
1
t xt dt T0
a
t a T0
t dt T
ta
Y(t) = CX(t)
ACE Engg. Academy
bn

t a T0
2
an
T0
2
T0

: 22 :
x t . cosk0 t dt
0
0
0
0
0
0
2
1
1
2
ta
t a T0
2
T0
t . cosk t dt T
0
ta
t a T0
T0
xt . sin k t dt
0
ta
t a T0
t . sin k t dt
0
ta
2
0
0
0
0
0
0
4
2
2
4
1
0
0
0
0
0
0
2
1
1
2
2
0
0
0
0
0
0
4
2
2
4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
y(n)*y(n) = [0,0,0,0,0,0,4,4,5,10,5,4,4,0,0,0,0,0,0]
Highest value is 10
=0
55. A signal xn is given by x0 = 3, x1 =2, x2 = 5,
x3 = 1, x4 = 0, x5 = 1, x6 = 2, x7 = 2, x8 = 4,
where the subscript n denotes time. The
peak value of the auto correlation of x2n11
is :
(a) 0
(b) 10
(c) 54
(d) 64
55. Ans: (b)
56. A
system
has
impulse
response
h[n] = cos(n)u[n]. The system is:

(a) Causal and stable
(b) Non causal and stable
(c) Non causal and not stable
(d) Causal and not stable
56. Ans: (d)
Sol: h(n) = cos (n). u(n)
h(n) =0, n < 0, causal
Sol:
x n 3,2,5,1,0,1,2,2,4
x(n - 11) [0,0,0,0,0,0,0,0,0,0,0,3,2,5,1,0,1,2,2,4]
yn x 2n 11 0,0,0,0,0,0,2,1,1,2
y(n) correlation y(n) = y(n) * y(n)

y n 2,1,1,2,0,0,0,0,0,0
n 0
| hn | | cosn | , not stable
57. If the three resistors in a delta network are

all equal in values i.e. RDELTA, then the value
of the resultant resistors in each branch of
the equivalent star network i.e. RSTAR will be
equal to:
(a)
R DELTA
3
(c) 2 RDELTA
ACE Engg. Academy
1
0
0
0
0
0
0
2
1
1
2
(b)
R DELTA
2
(d) RDELTA

: 23 :

E & T Engineering
57. Ans: (a)
When it is passive network it is reciprocal
Sol :
Zij = Zji
and Zii should greater than 0
Z value should greater than zero
RS
RD
RS
RD
RD
RS
59. A function c(t) satisfies the differential

equation c t + c(t) = (t). For zero initial
Z Z/3
RDELTA
condition c(t) can be represented by:

R DELTA
R STAR
3
58. Loop-voltage equations of a passive circuit

are given by:
Z11
Z
21
Z 31
Z12
Z 22
Z 32
(a) t
(b) t
(c) tu(t)
(d) tu(t)
Where u(t) is a unit step function.

59. Ans: (d)
Z13 I1 V1
Z 23 I 2 V2
Z 33 I 3 V3
Sol: ct ct t
sC(s)c(0) + C(s) = 1
c(0) = 0
1. Zij = Zji , i, j = 1, 2, 3
C(s) {s + 1} =1
2. Zii > 0, i=1, 2, 3
Cs
3. Z 0
c(t) = et . u(t)
Which of the above relations are correct ?

(a) 1 and 2 only
(b) 1 and 3 only
(c) 2 and 3 only
(d) 1, 2 and 3
1
s 1
60.
For
the
network
shown,
Thevenins
equivalent voltage source and resistance are,

respectively:
58. Ans: (a)

Sol: Loop-voltage equations of a passive circuit
Z11
Z
21
Z 31
Z12
Z 22
Z 32
Z13 I1 V1
Z 23 I 2 V2
Z 33 I 3 V3
1. Zij = Zji , i, j = 1, 2, 3
2. Zii > 0, i=1, 2, 3
3. Z 0
ACE Engg. Academy
I1
1 k
+
1V
A
99I1
(a) 1mV and 10
(b) 1V and 1k
(c) 1mV and 1k
(d) 1V and 10

: 24 :

61. In the circuit shown, if the power consumed
60. Ans: (d)
by the 5 resistor is 10W, then the power
Sol: For the circuit thevenins equivalent

1k
factor of the circuit is:
I1
99I1
1V
10
V 50 cos t
For VOC
1k
VOC I = 0
I1
1V
99I1
VOC
(a) 0.8
(b) 0.6
(c) 0.4
(d) 0.2
61. Ans: (b)
Sol:
By KCL at VOC
I1 +99I1 = 0
10
V(t) = 50cost
I1 = 0
1 VOC
0
1k
Power factor = cos =
VR eq
V
VOC = 1Volt
For ISC
V=
1k
0V
I1
1V
99I1
ISC
50
(RMS value)
2
Req = (5+10) = 15
I25 = 10
I=
2A
By KCL at 0 V
VR eq = IReq = 15 2
I1 +99I1 = ISC
ISC = 100I1
1 0
= 100
0.1Amps
1k
RTh =
Pf = cos =
VR eq
V
50 2 3
0.6 lags
50
5
2
VOC 1
10
ISC 0.1
ACE Engg. Academy

: 25 :
62. For the circuit shown, if the power

consumed by 5 resistor is 10W, then:
10
V 10 6 V
15
3
(a) 1 and 3 only
(b) 1 and 2 only
(c) 2 and 3 only
(d) 1, 2 and 3
62. Ans: (a)
V 10 6V
2. Link voltages
(a) 1 only
(b) 2 only
(c) Both 1 and 2
(d) Neither 1 nor 2
Sol: Branch voltages are related independent of
Which of the above are correct ?
following form an independent set:
63. Ans: (d)
3. Power factor = 0.866
10
63. For a given fixed tree of a network, the
Which of the above is/are correct?
2. Total impedance = 5

E & T Engineering
1. Branch currents
1. I 2A
Sol:
15
5
cut set.
Link currents are related independent of
Tieset.
64. For the network graph, the number of trees
(P) and the number of cut-sets (Q) are

respectively:
1
1. Power consumed by 5 is low

I25 = 10 I =
2 Amps
15
2. Total impedance Z = 10 + 5 + j
15
Z = 15 + j
Z=
3. Power factor cos =
30
10 3
3
VR eq
V
(a) 4 and 2
(b) 6 and 2
(c) 4 and 6
(d) 2 and 6
64. Ans: (c)

Sol: The given graph
IR eq
1
2 (10 5) 15 2
3
cos
0.866
10 6
10 6 2
1
3
3
4
ACE Engg. Academy

: 26 :
The no. of trees : 4 No. of cutsets = 6

67. For any lumped network, for any cut sets
As the total number of branches in the given
and at any instant of time the algebraic sum
graph 4, there only 4 possibilities with 3
of all branch currents traversing the cut-set
branches.
branches is always:
From the given graph it can be observed that
(a) One
any 2 branches out of the total 4 branches
(b) Zero
from a cut-set. As 6 such combination are
(c) Infinity
possible the number of cut-set Q = 6
(d) Greater than zero, but less than one
65. For
which
one
of
the
following
67. Ans: (b)
measurements a thermistor can be used ?

68. Which one of the following statements
(a) Velocity
(b) Humidity
concerning Tellegens theorem is correct?
(c) Displacement
(a) It is useful in determining the effects in
(d) Percent of CO2 in air
all parts of a linear four-terminal

network
65. Ans: (a)
(b) It is applicable for any lumped network

66. According to network graphs, the network
having elements which are linear or
with:
nonlinear, active or passive, time
1. Only two odd vertices is traversable
varying or time-invariant, and may
2. No odd vertices is traversable
contain
3. Two or more than two odd vertices are
sources
independent
or
dependent
(c) It can be applied to a branch, which is
traversable
not coupled to other branches in a

Which of the above statements is/are
network
(d) It states that the sum of powers taken
correct?
(a) 1 only
(b) 2 only
by all elements of a circuit within
(c) 3 only
(d) 1 and 2
constraints imposed by KCL and KVL
66. Ans: (d)
is non-zero
68. Ans: (b)
ACE Engg. Academy

: 27 :
69. The open circuit input impedance of a

2-port network is

E & T Engineering
70. Consider the following statements:

1.
Two identical 2nd order Butterworth LP

filters when connected in cascade will
make a 4th order Butterworth LP filter.
ABCD
2.
A high 2nd order filter will exhibit a

peak if Q exceeds certain value.
(a)
(b)
3.
(c)
(d)
4.
A band pass filter cannot be of order

one.
A network consists of an amplifier of
real gain A and a network in cascade
with each other. The network will
69. Ans: (a)
generate sinusoidal oscillations if the
Sol: The open circuit impedance of a 2-port
network is a first order LP filter.
network
V1
I2
I1
ABCD
V2
(a) 1 and 2
(b) 2 and 3
(c) 3 and 4
(d) 1 and 4
70. Ans: (b)
For ABCD parameters
71. The
lowest
and
the
highest
critical
V1 = AV2BI2
frequencies of RC driving point admittance
I1 = CV2DI2
are, respectively:
Open circuit impedance Zij
Z11
V1
I1
Ii 0
V
i
Ij
(a) a zero and a pole

(b) a pole and a zero
(c) a zero and a zero
(d) a pole and a pole
I 2 0
AV2 A
Z11
CV2 C
71. Ans: (a)

Sol: The lowest & highest critical frequencies of
RC driving point impedance
ACE Engg. Academy

: 28 :
For RL impedance and RC Admittance
function the critical frequency nearest to the

origin or at the origin must be a zero. Where
as the critical frequency nearest to infinity or

72. Ans: (b)

Sol:
Vs
5s 0
5s
s 1s 3 s 1s 3
at infinity must be a pole.
72. The poles and zeros of a voltage function

v(t) are: zero at the origin and simple poles
at 1, 3 and the scale factor is 5. The
5 / 2 15 / 2
s 1 s 3
5
15
vt e t .u t e 3 t .u t
2
2
contribution of the pole at 3 to v(t) is:
The contribution of the pole at 3 to v(t) is
(a) 2.5 3t
(b) 7.5 3t
7.5e3t u(t)
(c) 2.5 +3t
(d) 7.5 +3t
ACE Engg. Academy

: 29 :
73. The driving point impedance of the circuit

shown is given by Zs
0.2s
s 0.1s 2
2
74. Consider
the
following
driving
point
impedances which are to be realized using

passive elements:
1.
Z(s)

E & T Engineering
s3
2
s s 5
2.
s2 3
s2 s2 5
Which of the above is/are realizable?

The component values R, L and C are
(a) 1 only
(b) 2 only
respectively:
(c) Both 1 and 2
(d) Neither 1 nor 2
(a) 0.5 , 1H and 0.1 F
74. Ans: (d)
(b) 2 , 5 H and 5 F
Sol: For driving point impedance function of
(c) 0.5 , 0.1 H and 0.1 F
passive circuit (RL, RC and LC). The poles
(d) 2 , 0.1 H and 5 F
and zeros are alternate then only it is

realizable
73. Ans: (d)

Sol: The driving point impedance of the circuit
Z(s) =
0.2s
s 0.1s 2
2
1.
s3
2
s (s 5)
2.
s2 3
s 2 (s 2 5)
poles are repeating poles are repeating

Z(s)
SL
1
CS
(OR)
Both can not be realized as the difference
between highest degree of numerator and
1 1
Cs
Y(s) =
R sL
1
1 1

Cs
Z(s) R sL
s 0.1s 2 1 1

Cs
0.2s
R sL
2
s
1
1
1 1

Cs
0.2 2 0.1s
R sL
R = 2, L = 0.1H , C = 5F
ACE Engg. Academy
denominator polynomial is greater than one

75. A reactance function in the first Foster form
has poles at = 0 and = . The black-box
(B.B) in the network contains:
L
B.B
C

: 30 :

(a) An inductor
(c) 1, 2 and 4 only
(b) A capacitor
(d) 1, 2, 3 and 4
(c) A parallel L C circuit
76. Ans: (d)
(d) A series L C circuit
Sol:
1. The magnetic field at the centre at
75. Ans: (b)

Sol: A reactance function in the first Foster form
has poles at = 0 and =
circular coil
H
L
B.B
I
2a
a radius
B 2s
2. Lifting force F
2
F B2
3. E = 0
pole at origin It is capacitor in series
E static electric field
Black Box should contains only capacitor.
Static electric field is irrotational

4. A = 0
76. Consider the following statements :

1. The magnetic field at the centre of a
A=F
circular coil of a wire carrying current is
Any solenoidal vector can be expressed
inversely proportional to the radius of
as curl of some other vector
the coil
2. Lifting
power
of
magnet
is
proportional to square of magnetic flux

density
77. Consider the following:

1. Electric current flowing in a conducting
wire
3. A static electric field is conservative

(irrotational)
4. If the divergence of a vector A is zero,
2. A moving charged belt

3. An electron beam in a cathode ray tube
4. Electron movement in a vacuum tube
then vector A can be expressed as Curl

of a vector F
Which of the above are examples of
convection current?
(a) 1, 2 and 3 only
(a) 2, 3 and 4 only
(b) 1, 2 and 4 only
(b) 3 and 4 only
(c) 1 and 3 only
(d) 1, 2, 3 and 4
ACE Engg. Academy

: 31 :

E & T Engineering
77. Ans: (a)
(c) Reduced to a quarter
Sol: Convection current
(d) Remains unaltered
1. moving charged belt
79. Ans: (d)
2. electron beam in a cathode ray tube
Sol:
3. electron movement in a vacum tube
2R
Q
=Q
Q
=Q
78. Consider the following sources:

1. A permanent magnet
2. A charged disc rotating at uniform speed
Flux does not changes with radius
3. An accelerated charge
4. An electric field which changes linearly
with time
80. Divergence of a vector div D in the

cylindrical coordinate system is
Which of the above are the sources of steady

magnetic field?
(a) 1, 2 and 3 only
(b) 3 and 4 only
(c) 1, 2 and 4 only
(d) 1, 2, 3 and 4
(a)
1
D 1 D D z

z
(b)
1
D 1 D 1 ZDz

z z
(c)
1
D 1 D D z

z
(d)
78. Ans: (c)

Sol: Sources at steady magnetic field
1. permanent magnet
2. a charged disc rotating at uniform speed
D z
z
80. Ans: (c)

Sol: .D
1
D 1 D Dz

z
4. An electric field which changes linearly

with time
81. What is the value of work required to move

a +8 nC charge from infinity to a point P
79. A charge Q is enclosed by a Gaussian
which is at 2 m distance from a point charge
spherical surface of radius R. If R is doubled
Q=+5C?
then the outward flux is
(a) 180 J
(b) 180 nJ
(a) Doubled
(c) 18 J
(d) 18 nJ
(b) Increased four times

ACE Engg. Academy

: 32 :

81. Ans: (a)
83. Ans: (d)
Sol: W = Q1 V
Sol: Plane y = 2
1 Q2
4 r
1 Q1Q 2
4 r
s
6 109
a y
an
1
2
9
2
10
36
E = 108 a y
9 109 8 109 5 106

2
F = QE
= 10 103 108 a y
W = 180 J
= 1080 a y 103
F = 1.080 a y N
82. An electrostatic force between two point

charges increases when they are:
(a) More apart and dielectric constant of the
84. The potential at the centroid of an

equilateral triangle of side r 3 due to three
medium between them decreases
equal positive point charges each of value q
(b) Less apart and dielectric constant of the
and placed at the vertices of the triangle
medium between them decreases
would be
(c) More apart and dielectric constant of the

medium between them increases
(d) Less apart and dielectric constant of the
medium between them increases
82. Ans: (b)
Sol: F
q
2 0 r
(b)
(c)
3q
4 0 r
(d) zero
84. Ans: (c)
1 Q1Q 2
4 R 2
3q
8 0 r
(a)
Sol:
r 3 3r
2 ,2
Q1Q 2
R 2
q
(0,0)
83. A plane Y = 2 carries infinite sheet of

charge 6 nC/m2. If medium is free space
then force on a point charge of 10 mC
located at the origin is:
(a) 1080a y N
(b) 108 a y N
(c) 10.8 a y N
(d) 1.08a y N
ACE Engg. Academy
r 3 r
2 ,2
3,0
V = V1 + V2 + V3
1 q
1 q
1 q
4 r 4 r 4 r
3q
4r

: 33 :
85. The point form of the relation connecting

vector magnetic potential A and current
density J is
(a) A J
(b) A
D
t
0J
dv
4 R
(c) 2 A 0 J

E & T Engineering
(a) 3a x 4a y
6.5
az V / m
4
(b) 3a x 4a y
4
az V / m
6.5
(c) 3a x 4a y
6.5
az V / m
4
(d) 3a x 4a y
4
az V / m
6.5
86. Ans: (d)
A
J
(d)
Sol: E1 = 3 a x + 4 a y 2 a z
85. Ans: (c)
E1t = 3 a x + 4 a y
Sol: 2 A = 0J
E1n = 2 a y
Poissons equation in the magnetic field

86. In
the
region
<
0,
r1
2,
E1 3a x 4a y 2a z V / m . For region
E2 = 3 a x + 4 a y +
1
E1n
2
E2 = 3 a x + 4 a y
4
az
6.5
> 0, where r2 = 6.5, E 2 is:
ACE Engg. Academy

: 34 :
87. Consider the following statements regarding
E 0
a conductor and free space boundary:

1.
No charge and no electric field can

1
1
1
E E
0
0 r
Electric field inside the sphere, E
exist at any point within the interior of

2.
a conductor
r > 1
Charge may appear on the surface of a
E < E0
conductor
Which of the above statements are correct ?
(a) 1 only
(b) 2 only
(c) Both 1 and 2
(d) Neither 1 nor 2
Which
Inside Conductor
E=0
v = 0
of
material of dielectric constant 1 is placed

in a uniform electric field E0, then the
electric field E that exists inside the sphere
is
(b) Uniform and E E0
0
B
t
(d) B 0 J 0 0
E
t
89. Ans: (d)

Sol: H = J +
D
t
B
E
J
B = J +
(c) Varies but E < E0 always

(d) Varies but E > E0 always
Maxwells
(b) .B 0
(a) Uniform and E E0
following
correction made by Maxwell?
(c) E
88. A sphere of homogeneous linear dielectric
the
equations represents Amperes law with
(a) .E
87. Ans: (c)

Sol:
89.
rv
3
E
t
90. Precision is composed of two characteristics,
88. Ans: (c)
one is the number of significant figures to
Sol:
which a measurement may be made, the

r
E0
r>1
0 sphere
other is
(a) Conformity
(b) Meter error
(c) Inertia effects
(d) Noise
90. Ans: (a)

ACE Engg. Academy

: 35 :
91. If phasors P1 = 3 + j4 and P2 = 6 j8, then

|P1P2| is

E & T Engineering
93. For energy propagation in a lossless

transmission
(a) 5
(c)
(b)
73
53
(d) 153
line,
the
characteristic
impedance of the line is expressed in ohm as

below
(where
notations
have
usual
meanings).
91. Ans: (d)
(a)
LC
(b)
(c)
(d)
R j L
G jL
Sol: If phasers P1 = 3+j4 & P2 = (6j8)
then |P1 P2| = |(3+j4) (6j8)|

= | 3+j12 |
9 144 153
|P1 P2| =
92. A plane wave in free space has a magnetic
93. Ans: (b)

Sol: Z0
L
C
field intensity of 0.2 A/m in the Y-direction.

The wave is propagating in the Z-direction
with a frequency of 3 GHz. The wavelength
and amplitude of the electric field intensity
are, respectively
(a) 0.05 m, and 75 V/m
(b) 0.10 m and 75 V/m
(c) 0.05 m and 150 V/m
(d) 0.10 m and 150 V/m
94. A quarter wave-length transformer is used to

match a load of 200 to a line with input
impedance of 50 . The characteristic
impedance of the transformer would be
(a) 40
(b) 100
(c) 400
(d) 1000
94. Ans: (b)

Sol: ZQWT ZL Z0
92. Ans: (b)

Sol: H0 = 0.2
f = 3GHz
= 100
V 3 10
f 3 109
8
= 0.1
E0
120
H0
E0 = (0.2) (377)
E0 = 75.4
ACE Engg. Academy
20050
95. For
lossless
transmission
line
L = 0.35H/m, C = 90 pF/m and frequency

= 500 MHz. Then the magnitude of
propagation constant is
(a) 14.48
(b)17.63
(c) 19.59
(d) 21.20

: 36 :
97. An instrument always extracts some energy
95. Ans: (b)

Sol: For lossless transmission line
from the measured medium. Thus the

measured quantity is always disturbed by the
LC
2500 106 90 1012 0.35 106
= 17.63
act of measurement, which makes a perfect

measurement theoretically impossible and it
is due to
96. If an antenna has a main beam with both

half-power beam widths equal to 20, its
(a) Skin-effect
(b) Inductive effect
(c) Loading effect
(d) Lorenz effect
97. Ans: (c)
directivity (D) is nearly

(a) 90.6
(b) 102.5
(c) 205
(d) 226
96. Ans: (a)

Sol: If we have significant minor lobes, then the
98. The characteristic impedance 0 of a free

space is
(a)
approximate expression for directivity is

given by
D

0
0
(c)
72815
2
2
HP HP
Given:
HP = 20
HP = 20
Note: If a major lobe and any minor lobes of very
low intensity (minor lobes are ignore) are

present then the directivity is approximately
equal to
41253
41253
D0
HP HP
400
D 103.13
ACE Engg. Academy
00
0
0
(d) 0 0
98. Ans: (b)

Sol: 0
72815
D
91.01
800
(b)
99. A 3
0
0
1
digit voltmeter has an accuracy
2
specification of 0.5% of reading one

digit. What is the possible error in volts
when the instrument displays 2.00V on the
10 V scale?
(a) 0.03 V
(b) 0.02V
(c) 0.01 V
(d) 0.005 V
99. Ans: (b)
0.5
Sol: error =
2V 1 count
100

: 37 :
0.01V 00.01V

E & T Engineering
102. Dynamic
characteristics
of
instruments
leading to variations during measurement
= [0.01 V + 0.01 V] = 0.02 V
are
1. Speed of response
(or)
Resolution =
2. Fidelity
1
0.001
103
3. Dynamic error
On 10 V range, resolution
Which of the above are correct?
= 0.001 10 = 0.01
One digit = 0.01
Error 0.5% of reading
100. A megger is an instrument used for

measuring
(d) Sensitivity of the instrument
(d) Very low resistances
103. Ans: (a)
100. Ans: (c)
101. The values of capacitance and inductance

used in the series LCR circuit are 160 pF
10% in each. Then, the resonance frequency
(d) 0.9 MHz to 1.2 MHz

101. Ans: (b)
ACE Engg. Academy
to remain within specified limits
(c) Accuracy of the instrument
(c) Very high resistances
(c) 0.8 MHz to 1.0 MHz
(a) Degree to which repeatability continues
remain linear
(b) Very low voltages
(b) 0.9 MHz to 1.0 MHz
(d) 1, 2 and 3
(b) The extent to which the characteristics
(a) Very high voltages
(a) 0.8 MHz to 1.2 MHz
(c) 2 and 3 only
103. The reliability of an instrument refers to
Total error = (0.01 + 0.01) = 0.02
of the circuit is in the range of
(b) 1 and 3 only
102. Ans: (a)
0.5
2 0.01
100
and 160 H with the inherent tolerance
(a) 1 and 2 only
104. AC Voltmeters use diodes with

(a) High forward current and low reverse
current ratings
(b) Low forward current and low reverse
current rating
(c) Low forward current and high reverse
current ratings
(d) High forward currents and high reverse
current ratings
104. Ans: (a)
ACE Engg. Academy

: 38 :


: 39 :

E & T Engineering
105. The bridge circuit shown can be used to
107. The instrument servomechanism is actually
measure unknown lossy capacitor CX with
an instrument system made of components,
resistance RX. At balance.
which are
(a) Exclusively passive transducers
(b) Exclusively active transducers
C1
R2
R1
(c) Combination of passive transducers and

active transducers
(d) Exclusively primary sensing elements

Rx
C3
107. Ans: (c)
Cx
108. The scale of an electrodynamometer usually

reads the
(a) R X
C1
R
R 2 and C X 1 C3
C3
R2
(b) R X
C3
R
R 1 and C X 2 C3
C1
R1
(c) R X
R1
C
R 2 and C X 1 R 2
C2
R1
(d) RX = R2 and CX = C3
(a) Average value of the ac

(b) Mean value of the ac
(c) Effective value of the ac
(d) Squared value of the ac
108. Ans: (b)
109. The resolution of an indicating instrument
Where R1, R2, C1 and C3 can be assumed
can be defined as
ideal components
1. Variation in the meter reading for the

same applied input
105. Ans: (a)
2. Detectable change in the deflection due to

106. Inductance of a coil having Q value in the
range of (1< Q< 10), can be measured by
smallest change in the applied input

3. Detectable change in the output due to
drifting of pointer
using
(a) Hays bridge
(b) De Sautys bridge
(a) 1 only
(b) 2 only
(c) Maxwells bridge
(c) 3 only
(d) 1 and 3
(d) Carry Fosters bridge
109. Ans: (b)
106. Ans: (c)

ACE Engg. Academy

: 40 :

110. While measuring the phase difference
112. A sinusoidal voltage of amplitude 150 V has
between the signals v1(t) = 10 sin t and
been applied to a circuit having a rectifying
v2(t) = 10 sin (t + ), the Lissajous pattern
device that prevents flow of current in one
observed on CRO is a circle. The value of
direction and offers a resistance of 15 for
is
the flow of current in the other direction. If
(a) 2
(c)
(b)
hot wire type and PMMC type instruments
are connected in this circuit to measure the
(d)
electric
current,
110. Ans: (c)
respectively be
Sol:
(a) 3.18A and 5A

cosine
their
readings
would
(b) 5 A and 3.18 A

(c) 3.18 A and 5 mA
90 phase differece
(d) 5 A and 3.18 mA

112. Ans: (b)
sine
Sol:
V(t)
150V
circle
111. The expected voltage across a resistor is 100
V. However, the voltmeter reads a value of
97 V. The relative error is
(a) 0.97
(b) 0.03
(c) 0.07
(d) 3.00
This will be rectified by a single diode i.e.,

Half wave rectification.
i(t)
Im
111. Ans: (b)

Sol: r
Am At
At
97 100
0.03
100
ACE Engg. Academy
Im
150V
10A
15
Hot wire instrument reads Irms
I rms

: 41 :

E & T Engineering
114. A rotameter works on the principle of
Im
2
variable
10A
5A
2
PMMC instrument reads Idc

I
I dc m
(a) Pressure
(b) Length
(c) Area
(d) Resistance
114. Ans: (c)
115. An input voltage required to deflect a beam
= 0.318 10 A
through 3cm in a Cathode Ray Tube having
= 3.18 A
an anode voltage of 1000V and parallel
Readings are 5A and 3.18A respectively.
deflecting plates 1 cm long and 0.5 cm apart,

when screen is 30 cm from the center of the
plates is
(or)
Hot wire instrument measures RMS value
(b) 200 V
(c) 100 V
(d) 75 V
115. Ans: (c)
150
I
10A
15
I rms
(a) 300 V
Sol: We know, SV
10
5A
2
(Half wave rectifier Irms = Im/2)

PMMC measures average value
I avg
10
3.18 A
d
Vd
LD
2sVa
d
LD
Vd 2sVa
Given that: d = 3cm, Va= 1000V, L = 1 cm,
s = 0.5cm, D = 30 cm
113. A tachometer encoder can be used for

measurement of speed
(a) of false pulses because of electrical noise
(b) in forward and reverse directions
3 cm
1 cm 30 cm
Vd
2 0.5 cm 1000V
Vd
(or)
(c) in one direction only

(d) for single revolution in a multiple track
113. Ans: (c)
Vd
ACE Engg. Academy
3000 V
100 V
30
LVd
2dVa
D 2 d Va
= 100 V
L

: 42 :
116. A 6-bit ADC has a maximum precision

119. Strain
gauges
are
constructed
supply voltage of 20 V. What are the voltage
Germanium chips because Germanium:
changes for each LSB present and voltage to
(a) has a strong Hall Effect
be presented by (100110), respectively ?
(b) is crystalline in nature
(a) 0.317V and 12.06 V
(c) can be doped
(b) 3.17 V and 12.06 V
(d) has piezo-electric property
(c) 0.317 V and 1.206 V
with
119. Ans: (c)
(d) 3.17 V and 1.206 V

116. Ans: (a)
117. Which of the following transducers measure
120. The advantages of an LVDT is/are
the pressure by producing emf as a function
1. Linearity
of its deformation?
2. Infinite resolution
(a) Photoelectric transducer
3. Low Hysteresis
(b) Capacitive transducer
Which of the above advantages is/are
(c) Inductive transducer
correct?
(d) Piezoelectric transducer
(a) 1 only
(b) 2 only
(c) 3 only
(d) 1, 2 and 3
117. Ans: (d)
120. Ans: (d)
118. Maxwells bridge measure an unknown

inductance in terms of
(a) Known inductance
(b) Known capacitance
(c) Known resistance
(d) Q of the coil
118. Ans: (b)
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ACE Engg. Academy

: 43 :

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ACE Engg.

Hyderabad|Delhi|Bhopal|Pune|Bhubaneswar|Bengaluru|Lucknow|Patna|Chennai|Vijayawada|Vizag |Tirupati |Guntur| Kukatpally(Hyd)

Hence a plot of in Vs (1/T) must be a

Crystalline state of matter?

Hence the dependence of conductivity of an

(a) Shock compression

intrinsic semi conductor with temperature is

(b) Photo emission

(c) Conductivity measurements

03. Consider the following statements pertaining

01. Ans: (d)

to the resistance of a conductor:

Sol: The crystalline state or the crystal structure

1. Resistance can be simply defined as the

of any materials is determined only by x-ray

ratio of voltage across the conductor to

the current through the conductor. This

2. Resistance is a function of voltage and

(a) Proportional to temperature

3. Resistance is a function of conductor

(b) Increases exponentially with temperature

geometry and its conductivity

(c)Decreases exponentially with temperature

Which of the above statements are correct?

(d) Not altered with temperature

(a) 1 and 2 only

(b) 2 and 3 only

(c) 1 and 3 only

02. Ans: (b)

conductivity of a pure semiconductor on

03. Ans: (c)

increasing the voltage.

straight line. Thus the current I is directly

Taking log on both sides,

In = (Eg/2k) (1/T) + constant (ln (C)).

V = IR. R is called the resistance.

ACE Engg. Academy

Hyderabad|Delhi|Bhopal|Pune|Bhubaneswar|Bengaluru|Lucknow|Patna|Chennai|Vijayawada|Vizag |Tirupati |Guntur| Kukatpally(Hyd)

05. Which one of the following statements is

proportionality. It does not depend upon I or

V. It depends only upon the dimensions of

(a) For insulators the band-gap is narrow as

the conductor and the material of the

conductor as R = (l/A). Where is called

(b) For insulators the band-gap is relatively

the resistivity of the material of the

wide whereas for semiconductors it is

conductor, l-length of the conductor. A area

of cross section of the conductor.

(c) The band-gap is narrow in width for both

04. The ratio of ionic radii of Cations i.e, rc and

(d) The band-gap is equally wide for both

that of Anions i.e. rA for stable and unstable

05. Ans: (b)

(a) Less than unity

Sol: According to the band theory of solids, in

(b) Greater than unity

the case of conductors the valence band and

conduction band overlap in a semiconductor

(d) Either lesser or greater than unity

there is a small gap between the valence

04. Ans: (a)

band and conduction band. In the case of

Sol: Ceramic crystals are mostly ionic. The ionic