mos system under external bias: negative gate voltage

the holes in the p type substrate are attracted towards the si-oxide interface
the majority carrier conc near the surface becomes larger than the equilibrium h
ole conc in the substrate
hence this condition is called carrier accumulation on the surface
oxide electric field is directed towards the gate electrode
the negative surface potential causes the energy bands to bend upward near the s
urf
while the hole density inc, the electron minority carrier conc dec due to the ne
gative charged electrons
are pushed deeper into the substrate

negative gate voltage

the holes in the p substrate are attracted to the si-oxide interface
the majority carrier conc near the surf becomes larger than the equi hole conc i
n the substrate and this cond is called carrier accumulation
on the surface
oxide eletric field is directed towards the gate electrode.
the negative surface potential causes the energy bands to bend upward near the s
urf
while the hole dens inc, the minority carrier electron conc dec due to the negat
ively charged electron are pushed deeper into the substrate.

small positive voltage

since the substrate bias is zero, the oxide electic field is directed towards th
e substrate
the positive surface potential causes the energy bands to bend downward near the
surf
the majoirty carrier holes near the substrate will be repelled back into the sub
strate and this holes will leave behind negatively charged
fixed acceptor ions and the depletion region will occur.
under this bias cond, the region near the si-oxide interface is nearly empty of
all mobile carriers.

small positive voltage

since the substrate bias is zero, the oxide electric field is directed towards t
he substater
the positive surface voltage causes the energy band to bend downward near the su
rface

since the subtrate bias is zero, the oxide electric field is directed towards th
e substrate
the positive surface potential causes the energy bands to bend downward near the
surface
the majority carrier holes in the substrate will be repelled back into the subst
rate, and this holes will leave
negatively charge fixed acceptor ions behind, thus a depletion region is formed
near the surface.
under bias condition, the region near the si-oxide interface is nearly empty of
all mobile carriers.

mos system under external bias: small positive gate voltage

since the substrate bias is zero, the oxide electric field is directed towards t
he substrate
the positive surface potential causes the energy band to bend downward near the
surface
the majority carrier (holes) in the substrate will be repelled back into the sub
strate

the majority carrier ( holes) in the subtrate will be repelled back into the sub
strate and the holes will leave negatively
charged fixed acceptor ions behind, thus depletion region occur near the surface

small positive gate voltage

since the substrate is zero, the oxide electric field will be directed towards t
he substrate
the majority carrier (holes) in the substrate will be repelled back into the sub
state and this holes will leave the
negatively charged fixed acceptor ions behind, thus depletion region occur
under this bias condition, the region near the si-oxide interface is nearly empl
ty of all mobile carriers.

small positive gate voltage

since the substrate bias is zero, the oxide electric field will be directed towa
rds the substrate
the positve surface voltage causes the energy band to bend downward near the sur
f
the majority carrier (holes) in the substrate will be repelled back into the sub
strate and this holes will
leave the negatively charged fix acceptor ions behind, and this depletion region
occur near the surf
the region near the si-oxide interface is nearly emplty of all mobile carriers.

negative gate voltage

the holes in the p type substrate are attracted to the si-oxide interface
the majority conc near the surface becomes larger than the equi hole conc in the
substrate thus carrier accumulation
on the surface
oxide electric field directed towards the gate electrode.
the negative surface potential causes the energy bands to bend upward near the s
urf
while the hole density inc, the electron minority carrier conc dec due to the ne
gatively charged elect
are pushed deeper into the substrate.
small positive gate voltage
since the substrate voltage is zero, the oxide elctric field is directed towards
the substrate
the positive surface potential causes the energy bands to bend downard near the
surf
the majority carrier (holes) in the substrate are repelled back into the substra
te and this holes will leave behind negatively charged fixed acceptor ions, and
this depletion region formed

near the surf

the region near the si- oxide interface is nearly empty of all mobile carriers.
large positive gate voltage
further increase in the positive gate bias
as a result of the inc surface potential, the downward bending of energy bands w
ill increase too.
the mid-gap energy level ei becomes smaller than the fermi level EFP on the surf
ace, means the si substate in this region
becomes n type.
within this thin layer, the electron density is larger than the majority carrier
s hole density
since the positive gate potential attracts additional minority carriers (electro
ns) from the buld substrate to the surface
the n type thin layer by the positive gate bias is called the inversion layer an
d this condition is surface inversion
the thin inversion layer on the surface with large mobility electron conc can be
utilized for conducting
current between two terminals of mosfet