TP0610L/T, VP0610L/T, BS250

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
Part Number

V(BR)DSS Min (V)

rDS(on) Max (W)

VGS(th) (V)

ID (A)

TP0610L

60

10 @ VGS = 10 V

1 to 2.4

0.18

TP0610T

60

10 @ VGS = 10 V

1 to 2.4

0.12

VP0610L

60

10 @ VGS = 10 V

1 to 3.5

0.18

VP0610T

60

10 @ VGS = 10 V

1 to 3.5

0.12

BS250

45

14 @ VGS = 10 V

1 to 3.5

0.18

FEATURES
D
D
D
D
D

BENEFITS

High-Side Switching
Low On-Resistance: 8 W
Low Threshold: 1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF

Device Marking
Front View

TO-226AA
(TO-92)
S

TP0610L
VP0610L

Ease in Driving Switches

Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer

D
D
D
D
D

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories,
Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control

TO-92-18RM
(TO-18 Lead Form)

TP0610L
S TP
0610L
xxll

TO-236
(SOT-23)

Device Marking
Front View
BS250

VP0610L
S VP
0610L
xxll

Top View

APPLICATIONS

S BS
250
xxll

Top View

Marking Code:
3

S = Siliconix Logo
xxll = Date Code

TP0610T: TOwll
VP0610T: VOwll
w = Week Code
lL = Lot Traceability

Top View
TP0610T
VP0610T

BS250
S = Siliconix Logo
xxll = Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

TP0610L

TP0610T

VP0610L

VP0610T

BS250

Drain-Source Voltage

VDS

60

60

60

60

45

Gate-Source Voltage

VGS

"30

"30

"30

"30

"25

0.18

0.12

0.18

0.12

0.18

0.11

0.07

0.11

0.07

0.8

0.4

0.8

0.4

Continuous Drain Current

(TJ = 150_C)

TA= 25_C
TA= 100_C

Pulsed Drain Currenta

Power Dissipation

ID
IDM

TA= 25_C
TA= 100_C

Thermal Resistance, Junction-to-Ambient

Operating Junction and Storage Temperature Range

PD
RthJA
TJ, Tstg

0.8

0.36

0.8

0.36

0.32

0.14

0.32

0.14

156

350

156

350

55 to 150

Unit
V

A
0.83
150

W
_C/W
_C

Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209
S-41260Rev. H, 05-Jul-04

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TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T

Parameter

Symbol

Test Conditions

Typa

Min

VGS = 0 V, ID = 10 mA

70

60

Max

VP0610L/T

Min

Max

BS250

Min

Max

Unit

Static
Drain Source
Drain-Source
Breakdown Voltage
Gate-Threshold
Voltage

Gate-Bodyy Leakage
g

V(BR)DSS
VGS(th)

IGSS

60
45

VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 1 mA

1.9

2.4

VDS = 0 V, VGS = "20 V

"10

VDS = 0 V, VGS = "20 V, TJ = 125_C

"50

3.5

IDSS

nA
"20

VDS = 48 V, VGS = 0 V

VDS = 48 V, VGS = 0 V, TJ = 125_C

200

200

VDS = 25 V, VGS = 0 V

ID(on)

VDS = 10
10 V,
V VGS = 10
10 V

180
L Suffix

Forward
Transconductanceb
Diode Forward
Voltage

rDS(on)
DS( )

gfs
f
VSD

50

750

600

T Suffix

VGS = 4.5 V, ID = 25 mA
Drain-Source
On-Resistanceb

mA
m
0.5

VDS = 10 V, VGS = 4.5 V

On-State
O
S
Drain
Currentb

V
3.5

"10

VDS = 0 V, VGS = "15 V

Zero G
Gate Voltage
Drain Current

mA

220
11

25

VGS = 10 V, ID = 0.5 A

L Suffix

10

10

VGS = 10 V, ID = 0.5 A, TJ = 125_C

L Suffix

15

20

20

VGS = 10 V, ID = 0.2 A

T Suffix

6.5

10

10

VDS = 10 V, ID = 0.5 A

L Suffix

20

80

VDS = 10 V, ID = 0.1 A

T Suffix

90

60

IS = 0.5 A, VGS = 0 V

W
14
mS

70

1.1

Dynamic
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer
Capacitance

Crss

VDS = 25 V, VGS = 0 V
f = 1 MHz

15

60

60

10

25

25

pF

Switchingc
Turn-On Time

tON

Turn-Off Time

tOFF

VDD = 25
25 V, RL = 133 W
ID ^ 0.18 A, VGEN = 10 V, Rg = 25 W

Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

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10

10

ns

VPDS06

Document Number: 70209

S-41260Rev. H, 05-Jul-04

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics

Transfer Characteristics
1200

1.0
VGS = 10 V

TJ = 55_C

7V
8V

I D Drain Current (mA)

I D Drain Current (A)

0.8

6V

0.6

0.4
5V
0.2

900
25_C
125_C

600

300

4V
0.0

0
0

VDS Drain-to-Source Voltage (V)

10

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

40

20

16

32
C Capacitance (pF)

r DS(on) On-Resistance ( W )

VGS = 0 V
VGS = 4.5 V

12
VGS = 5 V
8
VGS = 10 V

Ciss
24

16
Coss
8

Crss

0
0

200

400

600

800

1000

ID Drain Current (mA)

ID = 500 mA

0.3

0.6

0.9

1.2

Qg Total Gate Charge (nC)

Document Number: 70209

S-41260Rev. H, 05-Jul-04

25

On-Resistance vs. Junction Temperature

VGS = 10 V @ 500 mA
VDS = 48 V

0
0.0

20

1.5
VDS = 30 V
rDS(on) On-Resiistance
(Normalized)

V GS Gate-to-Source Voltage (V)

1.8

12

15

VDS Drain-to-Source Voltage (V)

Gate Charge

15

10

1.5

1.8

1.2
VGS = 4.5 V @ 25 mA

0.9
0.6
0.3
0.0
50

25

25

50

75

100

125

150

TJ Junction Temperature (_C)

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TP0610L/T, VP0610L/T, BS250

Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-Source Voltage

10

1000

r DS(on) On-Resistance ( W )

I S Source Current (A)

VGS = 0 V

100
TJ = 125_C

10

TJ = 25_C
TJ = 55_C

ID = 500 mA

ID = 200 mA

1
0.00

0.3

0.6

0.9

1.2

1.5

VSD Source-to-Drain Voltage (V)

10

VGS Gate-to-Source Voltage (V)

Threshold Voltage Variance Over Temperature

Single Pulse Power, Junction-to-Ambient

0.5

0.4

2.5

ID = 250 mA

0.3
2

0.2

Power (W)

V GS(th) Variance (V)

0.1
0.0

1.5

TA = 25_C

0.1
0.5

0.2
0.3
50

0
25

25

50

75

100

125

150

0.01

0.1

10

100

600

Time (sec)

TJ Junction Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

2
1

Duty Cycle = 0.5

0.2
Notes:

0.1

PDM

0.1
0.05

t1

t2
1. Duty Cycle, D =

0.02

t1
t2

2. Per Unit Base = RthJA = 350_C/W

3. TJM TA = PDMZthJA(t)

Single Pulse

4. Surface Mounted

0.01
104

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103

102

101
1
Square Wave Pulse Duration (sec)

10

100

600

Document Number: 70209

S-41260Rev. H, 05-Jul-04

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All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000

Revision: 18-Jul-08

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