Escolar Documentos
Profissional Documentos
Cultura Documentos
y=0
y=1
x=1
sin(2)e2y dy dz
cos(2x)e0 cos(2x)e2 dx dz 104
2
0
2 0
1
1
1
1
sin(2x) (3 2) 1 e2 + 104
sin(2)e2y (3 2) = 0
= 104
2
2
0
0
3
= 104
c) Repeat part b, but use the divergence theorem: We nd the net outward current through
the surface of the cube by integrating the divergence of J over the cube volume. We have
J=
Jx
Jy
+
= 104 2 cos(2x)e2y 2 cos(2x)e2y = 0 as expected
x
y
where a az = 0.
b) z = 1, 0 1, in the az direction:
2 1
J dS =
100e2(1) (a + az ) az d d = 100e2
Ib =
0
5.3. Let
J=
400 sin
ar A/m2
r2 + 4
a) Find the total current owing through that portion of the spherical surface r = 0.8,
bounded by 0.1 < < 0.3, 0 < < 2: This will be
2 .3
400 sin
400(.8)2 2 .3 2
2
I=
J n da =
sin d
(.8) sin d d =
2
4.64
S
0
.1 (.8) + 4
.1
.3
1
= 346.5
[1 cos(2)] d = 77.4 A
.1 2
b) Find the average value of J over the dened area. The area is
2 .3
(.8)2 sin d d = 1.46 m2
Area =
0
.1
25
20
a 2
az A/m2
+ 0.01
a) Find the total current crossing the plane z = 0.2 in the az direction for < 0.4: Use
2 .4
20
d d
J n
da =
I=
2
z=.2
0
0 + .01
S
.4
1
20 ln(.01 + 2 ) (2) = 20 ln(17) = 178.0 A
=
2
0
b) Calculate v /t: This is found using the equation of continuity:
1
1
20
Jz
v
= J =
(J ) +
=
(25) +
=0
t
z
z 2 + .01
c) Find the outward current crossing the closed surface dened by = 0.01, = 0.4, z = 0,
and z = 0.2: This will be
.2 2
.2 2
25
25
a (a )(.01) d dz +
a (a )(.4) d dz
I=
.01
.4
0
0
0
0
2 .4
2 .4
20
20
+
az (az ) d d +
az (az ) d d = 0
2
2
0
0 + .01
0
0 + .01
2
Then
v (r, t) =
r
2 0.1 106 t
=
0.1 106 t
v
e
=
2
r
t
0.1 106 t
107 106 t
e
dt
+
f
(r)
=
e
+ f (r)
r2
r2
C/m3 .
Jm dS = 10.25 9.85 + 1.75 2.00 4.05 + 4.45 = 0.550 mg/s
s
with cross a
section dimensions , or a solid cylinder of length and radius a = /.
b) What is the conductance if every dimension of the sample found in part a is halved?
In all three cases mentioned in part a, the conductance is one-half the original value if
all dimensions are reduced by one-half. This is easily shown using the given formula for
conductance.
5.9a. Using data tabulated in Appendix C, calculate the required diameter for a 2-m long nichrome
wire that will dissipate an average power of 450 W when 120 V rms at 60 Hz is applied to it:
The required resistance will be
V2
l
=
P
(a2 )
R=
Thus the diameter will be
d = 2a = 2
lP
2(450)
=2
= 2.8 104 m = 0.28 mm
2
6
V
(10 )(120)2
b) Calculate the rms current density in the wire: The rms current will be I = 450/120 =
3.75 A. Thus
3.75
7
2
J=
2 = 6.0 10 A/m
4
(2.8 10 /2)
5.10. A solid wire of conductivity 1 and radius a has a jacket of material having conductivity 2 ,
and whose inner radius is a and outer radius is b. Show that the ratio of the current densities
in the two materials is independent of a and b.
A constant voltage between the two ends of the wire means that the eld within must be
constant throughout the wire cross-section. Calling this eld E, we have
E=
J1
J2
=
1
2
J1
1
=
J2
2
3
a A/m2
2l
4
5.11a. (continued)
Then the electric eld is found by dividing this result by :
9.55
3
a =
a V/m
2l
l
E=
V =
E dL =
5
9.55
9.55
a a d =
ln
l
l
5
4.88
V
=
3
l
4.88
1.63
V
=
=
I
3l
l
b) Show that integrating the power dissipated per unit volume over the volume gives the
total dissipated power: We calculate
l
.05
E J dv =
P =
.03
32
32
ln
d
d
dz
=
(2)2 2 (.05)l2
2(.05)l
5
14.64
=
W
3
l
P =VI =
dR =
0
d
1.72d
ez/d dz
=
(e 1) =
0 A
0 A
0 A
V0
0 AV0
=
R
1.72 d
c) the electric eld intensity E within the material: First the current density is
J=
0 V0
J
V0 ez/d
I
az =
az so that E =
=
az V/m
A
1.72 d
(z)
1.72 d
5.13. A hollow cylindrical tube with a rectangular cross-section has external dimensions of 0.5 in by
1 in and a wall thickness of 0.05 in. Assume that the material is brass, for which = 1.5 107
S/m. A current of 200 A dc is owing down the tube.
a) What voltage drop is present across a 1m length of the tube? Converting all measurements
to meters, the tube resistance over a 1 m length will be:
R1 =
(1.5
107 ) [(2.54)(2.54/2)
= 7.38 10
104
1
2.54(1 .1)(2.54/2)(1 .2) 104 ]
1
(1.5
105 )(1/2)(2.54)2
104 (.9)(.8)
= 2.87 102
0 ex/a V0
az
d
Using this, we nd
I=
J dS =
0
0 ex/a V0
0 abV0
0.63ab0 V0
az (az ) dx dy =
(1 e1 ) =
A
d
d
d
V0
d
=
I
0.63 ab 0
z
+1 2
= 10z 2 cos a + 10
z sin a 20( + 1)z cos az
E = V =
Then
E(.10, .2, 1.5) = 18.2 a + 145 a 26.7 az V/m
c) Find |s | at that point: Since E is at the perfectly-conducting surface, it will be normal
to the surface, so we may write:
EE
= 0 E E = 0 (18.2)2 + (145)2 + (26.7)2 = 1.32 nC/m2
= 0
s = 0 E n
|E|
surface
5.16. In cylindrical coordinates, V = 10002 .
a) If the region 0.1 < < 0.3 m is free space while the surfaces = 0.1 and = 0.3 m
are conductors, specify the surface charge density on each conductor: First, we nd the
electric eld through
E = V =
V
a = 2000 a so that D = 0 E = 20000 a C/m2
=0.1
outer conductor : s2 = D (a )
= 2000 C/m2
=0.3
= 6000 C/m2
b) What is the total charge in a 1-m length of the free space region, 0.1 < < 0.3 (not
including the conductors)? The charge density in the free space region is
v = D =
1
(D ) = 40000 C/m3
5.16c What is the total charge in a 1-m length, including both surface charges?
First, the net surface charges over a unit length will be
Qs1 ( = 0.1) = 2000 [2(0.1)](1) = 400 C
and
Qs2 ( = 0.3) = 6000 [2(0.3)](1) = 3600 C
The total charge is now Qtot = Qs1 + Qs2 + Qv = 0.
5.17. Given the potential eld V = 100xz/(x2 + 4) V. in free space:
a) Find D at the surface z = 0: Use
100x
x
az V/m
ax 0 ay 2
E = V = 100z
x x2 + 4
x +4
At z = 0, we use this to nd D(z = 0) = 0 E(z = 0) = 1000 x/(x2 + 4) az C/m2 .
b) Show that the z = 0 surface is an equipotential surface: There are two reasons for this:
1) E at z = 0 is everywhere z-directed, and so moving a charge around on the surface
involves doing no work; 2) When evaluating the given potential function at z = 0, the
result is 0 for all x and y.
c) Assume that the z = 0 surface is a conductor and nd the total charge on that portion
of the conductor dened by 0 < x < 2, 3 < y < 0: We have
s = D az
z=0
1000 x
C/m2
x2 + 4
So
Q=
3
1000 x
2
dx dy = (3)(100)0
x +4
2
1
ln(x2 + 4) = 1500 ln 2 = 0.92 nC
2
0
5.18. A potential eld is given as V = 100 ln [(x + 1)2 + y 2 ]/[(x 1)2 + y 2 ] V. It is known that
point P (2, 1, 1) is on a conductor surface and that the conductor lies in free space. At P , nd
a unit vector normal to the surface and also the value of the surface charge density on the
conductor.
A normal vector is the electric eld vector, found (after a little algebra) to be
ax
6
z
b) Assume these are conducting surfaces and nd the surface charge density at that point
on the V = 60 V surface where x = 2 and z = 1. It is known that 0 V 60 V is the
eld-containing region: First, on the 60 V surface, we have
2x2 y z
6
7
= 0 2(2)2 y(1) 1 6 = 0 y =
z
8
Now
E = V = 40xyz ax 20x2 z ay [20xy 20z] az
Then, at the given point, we have
D(2, 7/8, 1) = 0 E(2, 7/8, 1) = 0 [70 ax + 80 ay + 50 az ] C/m2
We know that since this is the higher potential surface, D must be directed away from
it, and so the charge density would be positive. Thus
D(y) =
100
4
[(y 1) a 2 a ] [(y + 1) a 2 a ]
y
x
y
x
+
[(y 1) ay + 2 ax ] [(y + 1) ay + 2 ax ]
C/m2
[(y 1)2 + 4]3/2
[(y + 1)2 + 4]3/2
image charges
5.20a. (continued)
In the expression, all y components cancel, and we are left with
1
1
D(y) = 100
+
2
3/2
[(y 1) + 4]
[(y + 1)2 + 4]3/2
We now nd the charge density at the origin:
s (0, 0, 0) = D ax
ax C/m2
= 17.9 C/m2
y=0
y=h
1
1
= 100
+
2
3/2
[(h 1) + 4]
[(h + 1)2 + 4]3/2
C/m2
5.21. Let the surface y = 0 be a perfect conductor in free space. Two uniform innite line charges
of 30 nC/m each are located at x = 0, y = 1, and x = 0, y = 2.
a) Let V = 0 at the plane y = 0, and nd V at P (1, 2, 0): The line charges will image across
the plane, producing image line charges of -30 nC/m each at x = 0, y = 1, and x = 0,
y = 2. We nd the potential at P by evaluating the work done in moving a unit positive
charge from the y = 0 plane (we choose the origin) to P : For each line charge, this will
be:
nal distance from charge
l
ln
VP V0,0,0 =
20
initial distance from charge
where V0,0,0 = 0. Considering the four charges, we thus have
1
2
10
17
l
ln
VP =
+ ln
ln
ln
20
2
1
1
2
!
1
30 109
l
17
10 17
+ ln
10 + ln
ln
ln (2) + ln
=
=
20
2
20
2
2
= 1.20 kV
b) Find E at P : Use
l
(1, 2, 0) (0, 1, 0) (1, 2, 0) (0, 2, 0)
EP =
+
20
|(1, 1, 0)|2
|(1, 0, 0)|2
(1, 2, 0) (0, 1, 0) (1, 2, 0) (0, 2, 0)
|(1, 3, 0)|2
|(1, 4, 0)|2
(1, 1, 0) (1, 0, 0) (1, 3, 0) (1, 4, 0)
l
+
10
5.22. The line segment x = 0, 1 y 1, z = 1, carries a linear charge density L = |y| C/m.
Let z = 0 be a conducting plane and determine the surface charge density at: (a) (0,0,0); (b)
(0,1,0).
We consider the line charge to be made up of a string of dierential segments of length, dy ,
and of charge dq = L dy . A given segment at location (0, y , 1) will have a corresponding
image charge segment at location (0, y , 1). The dierential ux density on the y axis
that is associated with the segment-image pair will be
dD =
L dy [(y y ) ay az ] L dy [(y y ) ay + az ]
L dy az
=
4[(y y )2 + 1]3/2
4[(y y )2 + 1]3/2
2[(y y )2 + 1]3/2
In other words, each charge segment and its image produce a net eld in which the y
components have cancelled. The total ux density from the line charge and its image is
now
1
|y | az dy
D(y) = dD =
2
3/2
1 2[(y y ) + 1]
az 1
y
y
=
+
dy
2 0 [(y y )2 + 1]3/2
[(y + y )2 + 1]3/2
1
az
y(y + y ) + 1
y(y y ) + 1
=
+
2 [(y y )2 + 1]1/2
[(y + y )2 + 1]1/2 0
az
y(y + 1) + 1
y(y 1) + 1
2
1/2
=
+
2(y
+
1)
2 [(y 1)2 + 1]1/2
[(y + 1)2 + 1]1/2
Now, at the origin (part a), we nd the charge density through
1
az 1
+ 2 = 0.29 C/m2
=
s (0, 0, 0) = D az
2
y=0
2
2
Then, at (0,1,0) (part b), the charge density is
az
3
2 = 0.24 C/m2
=
1+
s (0, 1, 0) = D az
2
y=1
5
5.23. A dipole with p = 0.1az C m is located at A(1, 0, 0) in free space, and the x = 0 plane is
perfectly-conducting.
a) Find V at P (2, 0, 1). We use the far-eld potential for a z-directed dipole:
V =
z
p
p cos
=
2
2
2
40 r
40 [x + y + z 2 ]1.5
The dipole at x = 1 will image in the plane to produce a second dipole of the opposite
orientation at x = 1. The potential at any point is now:
z
p
z
V =
5.23b) Find the equation of the 200-V equipotential surface in cartesian coordinates: We just set the
potential exression of part a equal to 200 V to obtain:
z
z
= 0.222
5.24. At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as
0.43 and 0.21 m2 /V s, respectively. If the electron and hole concentrations are both 2.31019
m3 , nd the conductivity at this temperature.
With the electron and hole charge magnitude of 1.6 1019 C, the conductivity in this
case can be written:
= |e |e + h h = (1.6 1019 )(2.3 1019 )(0.43 + 0.21) = 2.36 S/m
5.25. Electron and hole concentrations increase with temperature. For pure silicon, suitable expressions are h = e = 6200T 1.5 e7000/T C/m3 . The functional dependence of the mobilities
on temperature is given by h = 2.3 105 T 2.7 m2 /V s and e = 2.1 105 T 2.5 m2 /V s,
where the temperature, T , is in degrees Kelvin. The conductivity will thus be
= e e + h h = 6200T 1.5 e7000/T 2.1 105 T 2.5 + 2.3 105 T 2.7
1.30 109 7000/T
e
1 + 1.095T .2 S/m
=
T
Find at:
a) 0 C: With T = 273 K, the expression evaluates as (0) = 4.7 105 S/m.
b) 40 C: With T = 273 + 40 = 313, we obtain (40) = 1.1 103 S/m.
c) 80 C: With T = 273 + 80 = 353, we obtain (80) = 1.2 102 S/m.
5.26. A semiconductor sample has a rectangular cross-section 1.5 by 2.0 mm, and a length of 11.0
mm. The material has electron and hole densities of 1.81018 and 3.01015 m3 , respectively.
If e = 0.082 m2 /V s and h = 0.0021 m2 /V s, nd the resistance oered between the end
faces of the sample.
Using the given values along with the electron charge, the conductivity is
= (1.6 1019 ) (1.8 1018 )(0.082) + (3.0 1015 )(0.0021) = 0.0236 S/m
The resistance is then
R=
0.011
=
= 155 k
A
(0.0236)(0.002)(0.0015)
12