GaN MOCVD Growth

MOCVD Growth GaN
Ian Ferguson
Georgia Institute of Technology
School of Electrical and Computer Engineering
Atlanta, GA 30332-0250
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Solid State Lighting and

Illumination Engineering
Please contact ianf@ece.gatech.edu with any referencing errors and they will be corrected
ECE8833A
Large Area GaN Growth
Temperature control and uniformity over a wide

range of growth temperatures (500 1100 oC)
Stable and reproducible flow patterns over a
wide range of pressures and temperatures
Alkyl/hydride separation (control of prereactions)
Robustness/lifetime of wafer carrier and heater
subsystems

ECE8833A
MOCVD reactor technology
TM
Flow Flange (water cooled)

Main Carrier Gas
Reagents
Reagents
Gate Valve
Loadlock
Susceptor
Resistive Heater
Shutter
Heat Shields
Thermocouple(s)
Exhaust
Rotation
Mechanism

ECE8833A
RDR Modeling Basics

20
u
g
(disk temperature)
T
(radial velocity)
Axial Velocity
(toward disk)
(axial velocity)
Dimensionless Height
(inlet temperature)
15
Radial
Velocity
N2 H2 He
Ar
Circumferential
Velocity
10
Temperature
5
(Circumferential velocity)
0
Coordinate system used to describe the

rotating disk. Independent variables are r
(radius), (disk spin rate), and x (height
above disk)

0.5
1.5
Dimensionless Variable
Solutions of the infinite-radius rotating disk
fluid equations for high disk temperature (T
= 1400 K, T = 300K) conditions. The
temperature dependent transport properties
of different carrier gases produce slightly
different solutions
ECE8833A
Simple Theory
to link fluid dynamics and engineering
Reynolds Number
200 < Re < 750
mixed convection parameter

MCP < 2
rd2 P
T
1
T
( T / P )
minimum flow (Q) (P)

ECE8833A
GaN MOCVD System /Turbo-Disc Flow Patterns
Temperature Patterns
Shroud Flow
Hydrides
Alkyls
700 RPM
Rotating Disk
1400 RPM
Heat Shield
Exhaust

ECE8833A
Generic GaN Device Structure

(5) (Al,Ga)N:Mg (p-doped)
Mg turn on delay
Cant easily characterize
NH3 Purity Issues
Temperature control
(4) (Ga,In)N Active Layer

Extremely sensitive to temperature
Cannot easily measure thickness
Optimized through device fabrication
(3) GaN:Si (n-doped)

Reproducibility and uniformity is good
NH3 Purity Issues
(2) Nucleation Layer

determines electrical and optical
properties of rest of the structure
very sensitive to temperature
sensitive to substrate preparation
(1) Substrate
Type
Polishing
Cleaning

ECE8833A
Sapphire Wafer Bowing
Thickness
one side
tw o side
0.010
31
na
0.013
22
20
0.017
11
na
Sapphire is essentially transparent from 0.2 to 4 micron, so

flatness is essential to good thermal uniformity
Different CTEs for sapphire and GaN (7.5 vs 5.6 ppm/K)
(a-plane) makes bowing difficult to avoid
Epi Up
Flat
Substrate

35m
With 4 m
GaN
ECE8833A
In situ Monitoring
Schematic of in situ
reflectance sensor
optical fiber to
spectrograph
Tungsten
lamp
Remote, non-intrusive
One access window
Insensitive to substrate rotation
Simple
-- no moving parts
-- stable tungsten lamp light source
Broadband detection
Reflectance
0.35
substrate
0.30
0.25
0.20
0
100
200
time = (Thickness/Growth Rate)

ECE8833A
A Typical Growth Process

Typical
Temperature (C)
1100
1050
800
550
In situ cleaning
Buffer
GaN growth
AlGaN growth
Si doping
InGaN growth
QW or co-doping
GaN growth
AlGaN growth
Mg doping
Growth Time

ECE8833A
A typical GaN reflectivity spectrum

3.5
doped layer
Main layer: GR = 2.998 um/hr

3
Buffer layer
2.5
Heat clean
R (a.u.)
1.5
1
Nucleation layer
0.5
0
0
1000
2000
3000
4000
5000
6000
Time (sec)

ECE8833A
Nucleation layer growth rate vs. temperature
Growth Rate
124 kJ/Mol
0.1
1.3
1.31
1.32
1.33
1.34
1.35
1.36
1.37
1000/T (1000/K)

ECE8833A
TMGa and NH3 adduct formation

ECE8833A
Reciprocal space mapping

Finite layer thickness, superlattice, tetragonal distortion...perpendicular
Orientation, mosaicity, curvature.......................................circumferential
Changes in lattice parameter.............................................radial
Lateral grain boundaries (edge dislocations)....................parallel
or
ien
tat
ion
-2
origin

ECE8833A
Schematic X-ray Reflection
substrate
reflection
R
L3
layer
reflection
L2
L1
surface
normal

to
origin
ECE8833A
(104) Reflection
direction of broadening
due to tilt of lattice planes
GaN (104) rlp forms a tilted

ellipse with contributions from
orientational broadening and
finite lateral coherence length.
direction of broadening
due to lateral coherence
length.
to origin
surface normal
ECE8833A
Estimate of coherence length
component due
to tilt

component due to finite

lateral coherence length.
= 0.0003rlu
(1 rlu = .6289 Angstrom-1)
coherence length = 6,300 Angstrom
ECE8833A
X-ray Spectra
GaN layer.
(101) rocking curve.
Twist = 0.13 degrees.
GaN layer.
(004) rocking curve.
Tilt = 0.06 degrees
Sapphire substrate
(0 0 12) rocking curve.
FWHM = 0.02 degrees

ECE8833A
GaN domain structure

Twist
GaN
Sapphire
Tilt
0.060
0.020
Twist
0.130
0.020
5000 -8000
Angstrom
Infinite
Lateral
Tilt
Lateral
Coherence Length
ECE8833A
Optimization of GaN Buffer Layer

X-Ray Reflection
Predominant
dislocation
(002)
Screw
250 arcsec
Edge
30 arcsec
(102)
M
ix
Defect Density
ed 400 arcsec
~ 108 cm-2
(A)
750 arcsec
~ 1010 cm-2
(B)
(A)
(B)
ECE8833A
10
Morphological development
Sapphire substrate
Low T Nucleation Layer
Heat to > 1000 C

Initiate Growth
Smooth Film

ECE8833A
A Comparison of PL Intensity and X-ray FWHM for a GaN Layer

B
A
PL intensity map
and cross section.
0.082
0.080
0.078
FWHM (deg.)
0.076
0.074
0.072
0.070
XRD FWHM cross

section for (105) reflection.
0.068
0.066
0.064
-30
-20
-10
10
20
30
X Coordinate (mm)
The PL intensity is only sensitive to the XRD reflection that maps

the magnitude of twist in the GaN due to edge dislocations.
ECE8833A
11
600
1200
900
400
600
200
(102) FWHM (arcsec)
300K Mobility (cm / V - s)
Growth of GaN
300
3000
4500
6000
7500
N/III Ratio
Higher N/III ratio leads to reduced

defects and higher mobility
ECE8833A
Growth of GaN
pit
dislocation
Sapphire

ECE8833A
12
(102)
(002)
-3
Carrier concentration (cm )
Growth of p - GaN
1E18
1E17
320
360
400
440
480
FWHM (arcsec)
All films grown with same Cp2Mg flow

Improved buffer layer growth leads to lower
defects and high p-doping level
ECE8833A
p-GaN (PL with FWHM = 300 meV)
Relative Emission Intensity
C
B
p-GaN PL at 300K
A
433.5 nm
B
422.1 nm
C
445.5 nm
FWHM = 300 meV
p-type GaN
Relative Emission Intensity
(i) T=300K
(ii) T=77K
x15
(ii)
p=1x1017cm-3
x30
(i)
x1
(ii)
p=5x1017cm-3
x10
340
440
540
300
350
Wavelength (nm)

(i)
400
450
500
550
600
Wavelength (nm)
ECE8833A
13
Plan-view TEM of GaN
300 nm
300 nm
a
a) Undoped GaN
(Defect density: 1.5 x 109 cm-2)

b) p-GaN
(Defect density: 4 x 109 cm-2)
ECE8833A
MOCVD Growth GaN
Ian Ferguson
Georgia Institute of Technology
School of Electrical and Computer Engineering
Atlanta, GA 30332-0250

As a courtesy to your fellow class members

please switch off all cell phones and pagers
ECE8833A
14

GaN MOCVD Growth

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GaN MOCVD Growth

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MOCVD Growth GaN

As a courtesy to your fellow class members

Solid State Lighting and

Large Area GaN Growth

Temperature control and uniformity over a wide

Solid State Lighting and

MOCVD reactor technology

Flow Flange (water cooled)

Solid State Lighting and

RDR Modeling Basics

Coordinate system used to describe the

Solid State Lighting and

to link fluid dynamics and engineering

mixed convection parameter

minimum flow (Q) (P)

Solid State Lighting and

GaN MOCVD System /Turbo-Disc Flow Patterns

Solid State Lighting and

Generic GaN Device Structure

(4) (Ga,In)N Active Layer

(3) GaN:Si (n-doped)

(2) Nucleation Layer

Solid State Lighting and

Sapphire Wafer Bowing

Sapphire is essentially transparent from 0.2 to 4 micron, so

Solid State Lighting and

time = (Thickness/Growth Rate)

Solid State Lighting and

A Typical Growth Process

Solid State Lighting and

A typical GaN reflectivity spectrum

Main layer: GR = 2.998 um/hr

Solid State Lighting and

Nucleation layer growth rate vs. temperature

Solid State Lighting and

TMGa and NH3 adduct formation

Solid State Lighting and

Reciprocal space mapping

Solid State Lighting and

Schematic X-ray Reflection

Solid State Lighting and

GaN (104) rlp forms a tilted

Estimate of coherence length

Solid State Lighting and

component due to finite

Solid State Lighting and

GaN domain structure

Optimization of GaN Buffer Layer

Low T Nucleation Layer

Heat to > 1000 C

Solid State Lighting and

A Comparison of PL Intensity and X-ray FWHM for a GaN Layer

XRD FWHM cross

The PL intensity is only sensitive to the XRD reflection that maps

(102) FWHM (arcsec)

300K Mobility (cm / V - s)

Higher N/III ratio leads to reduced

Solid State Lighting and

Carrier concentration (cm )

All films grown with same Cp2Mg flow

p-GaN (PL with FWHM = 300 meV)

Relative Emission Intensity