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DISCRETE SEMICONDUCTORS

DATA SHEET
ndbook, halfpage

M3D186

2PC945
NPN general purpose transistor
Product specification
Supersedes data of 1997 Mar 26

1999 May 28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945

FEATURES

PINNING

Low current (max. 100 mA)

PIN

Low voltage (max. 50 V).


APPLICATIONS

DESCRIPTION

base

collector

emitter

General purpose switching and amplification.


DESCRIPTION

handbook, halfpage1

NPN transistor in a TO-92 (SOT54) plastic package.


PNP complement: 2PA733.

2
3

1
3

MAM259

Fig.1

Simplified outline (TO-92; SOT54)


and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).s
SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

60

VCEO

collector-emitter voltage

open base

50

VEBO

emitter-base voltage

open collector

IC

collector current (DC)

100

mA

ICM

peak collector current

200

mA

IBM

peak base current

Ptot

total power dissipation

Tstg

100

mA

500

mW

storage temperature

65

+150

Tj

junction temperature

150

Tamb

operating ambient temperature

65

+150

Tamb 25 C; note 1

Note
1. Transistor mounted on an FR4 printed-circuit board.

1999 May 28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945

THERMAL CHARACTERISTICS
SYMBOL
Rth j-a

PARAMETER

CONDITIONS

thermal resistance from junction to ambient

VALUE

UNIT

250

K/W

note 1

Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL

PARAMETER

CONDITIONS
IE = 0; VCB = 60 V

MIN.

TYP.

MAX.

UNIT

100

nA
nA

ICBO

collector cut-off current

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

100

hFE

DC current gain

IC = 0.1 mA; VCE = 6 V

50

hFE

DC current gain

IC = 1 mA; VCE = 6 V
200

400

VCEsat

collector-emitter saturation voltage IC = 100 mA; IB = 10 mA

300

mV

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 10 mA

1.1

VBE

base-emitter voltage

IC = 1 mA; VCE = 6 V

600

700

mV

2PC945P

Cc

collector capacitance

IE = ie =0; VCB = 6 V; f = 1 MHz

pF

Ce

emitter capacitance

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

11

pF

fT

transition frequency

IC = 10 mA; VCE = 6 V; f = 100 MHz 150

450

MHz

noise figure

IC = 200 A; VCE = 5 V; RS = 2 k
f = 1 kHz, B = 200 Hz

15

dB

1999 May 28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads

SOT54

E
d

L
b

1
e1

3
b1

L1

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)


UNIT

b1

e1

L1(1)

mm

5.2
5.0

0.48
0.40

0.66
0.56

0.45
0.40

4.8
4.4

1.7
1.4

4.2
3.6

2.54

1.27

14.5
12.7

2.5

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54

1999 May 28

REFERENCES
IEC

JEDEC

EIAJ

TO-92

SC-43

EUROPEAN
PROJECTION

ISSUE DATE
97-02-28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945

DEFINITIONS
Data Sheet Status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 May 28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945
NOTES

1999 May 28

www.DataSheet4U.com

Philips Semiconductors

Product specification

NPN general purpose transistor

2PC945
NOTES

1999 May 28

www.DataSheet4U.com

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Philips Electronics N.V. 1999

SCA 65

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115002/03/pp8

Date of release: 1999 May 28

Document order number:

9397 750 05962