Power Transistors

2SD2221
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1469

Unit: mm
15.00.5
4.00.1

4.00.1
15.00.2

20.00.3

10.50.5

2.00.1

3.20.1

3.5

Optimum for 90W HiFi output

High foward current transfer ratio hFE: 5000 to 30000
Low collector to emitter saturation voltage VCE(sat): <2.5V

19.00.3

16.20.5

12.5

Features

4.50.2

13.00.5

(TC=25C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

160

Collector to emitter voltage

VCEO

140

Emitter to base voltage

VEBO

Peak collector current

ICP

15

Collector current

IC

Collector power TC=25C

dissipation

Ta=25C

100

PC

Junction temperature

Tj

Storage temperature

Tstg

2.5

150

55 to +150

2.00.2

Solder Dip

Absolute Maximum Ratings

1.40.3

1.10.1

0.60.2

5.450.3
10.90.5
1

1:Base
2:Collector
3:Emitter
EIAJ:SC65(a)
TOP3 Package(a)

Internal Connection
C
B

Electrical Characteristics

(TC=25C)
Symbol

Parameter

ICBO

Collector cutoff current

max

Unit

VCB = 160V, IE = 0

100

Conditions

min

typ

ICEO

VCE = 140V, IB = 0

100

Emitter cutoff current

IEBO

VEB = 5V, IC = 0

100

Collector to emitter voltage

VCEO

IC = 30mA, IB = 0

140

hFE1

VCE = 5V, IC = 1A

2000

hFE2*

VCE = 5V, IC = 7A

5000

Collector to emitter saturation voltage

VCE(sat)

IC = 7A, IB = 7mA

Base to emitter saturation voltage

VBE(sat)

IC = 7A, IB = 7mA

Transition frequency

fT

VCE = 10V, IC = 0.5A, f = 1MHz

Turn-on time

ton

Storage time

tstg

Fall time

tf

Forward current transfer ratio

*h

FE2

IC = 7A, IB1 = 7mA, IB2 = 7mA,

VCC = 50V

30000
2.5
3.0

V
V

20

MHz

2.0

6.0

1.2

Rank classification

Rank
hFE2

5000 to 15000 8000 to 30000

Power Transistors

2SD2221

PC Ta

IC VCE

VBE(sat) IC

12

100

80

60

40

100
TC=25C

IB=2mA
10

20

1mA
0.9mA
0.8mA

0.7mA
6

0.6mA
0.5mA
0.4mA

0.3mA
2

(2)

0.2mA

(3)
0

0
20

40

60

80 100 120 140 160

Ambient temperature Ta (C)

10

IC/IB=1000

10

TC=100C

TC=100C

1000

25C
25C

0.3

10

30

300

25C

100

25C

30
10
0.01 0.03

100

tstg
3
ton
1

10

tf

0.3
0.1

Non repetitive pulse

TC=25C

30
ICP
10ms

10

t=1ms

IC
3

DC

1
0.3
0.1
0.03

0.03

0.01

0.01
0

0.3

0.3

12

Collector current IC (A)

16

10

30

100

Collector current IC (A)

IE=0
f=1MHz

300

100

30

10

10

30

100

300

10

30

100

Collector to base voltage VCB (V)

100

Collector current IC (A)

10

0.3

Area of safe operation (ASO)

Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000(IB1=IB2)
VCC=50V
TC=25C

30

100C
25C

1
0.1

Collector current IC (A)

ton, tstg, tf IC
100

TC=25C
1

Cob VCB

30000

3000

0.3

1000

10000

0.1
0.1

10

0.1
0.1

12

VCE=5V

30

30

hFE IC

Forward current transfer ratio hFE

Collector to emitter saturation voltage VCE(sat) (V)

100000

Collector current IC (A)

Switching time ton,tstg,tf (s)

IC/IB=1000

Collector to emitter voltage VCE (V)

VCE(sat) IC
100

Collector output capacitance Cob (pF)

Base to emitter saturation voltage VBE(sat) (V)

(1) TC=Ta
(2) With a 100 100 2mm
Al heat sink
(3) Without heat sink
(PC=2.5W)
(1)

Collector current IC (A)

Collector power dissipation PC (W)

120

1000

Collector to emitter voltage VCE (V)

Power Transistors

2SD2221
Rth(t) t

Thermal resistance Rth(t) (C/W)

1000
Note: Rth was measured at Ta=25C and under natural convection.
(1) PT=10V 0.2A (2W) and without heat sink
(2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink
100
(1)

(2)

10

0.1
104

103

102

101

10

102

103

104

Time t (s)