AP9T15GH/J

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

Low Gate Charge D BVDSS 20V

Capable of 2.5V Gate Drive RDS(ON) 50m
Single Drive Requirement G ID 12.5A
RoHS Compliant
S

Description
Advanced Power MOSFETs from APEC provide the G D
designer with the best combination of fast switching, S TO-252(H)
ruggedized device design, ultra low on-resistance and
cost-effectiveness.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +16 V
ID@TC=25 Continuous Drain Current, V GS @ 4.5V 12.5 A
ID@TC=100 Continuous Drain Current, V GS @ 4.5V 8 A
1
IDM Pulsed Drain Current 60 A
PD@TC=25 Total Power Dissipation 12.5 W
Linear Derating Factor 0.1 W/
3
PD@TA=25 Total Power Dissipation 2 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 10 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 62.5 /W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W

Data and specifications subject to change without notice 1

201009303
AP9T15GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 50 m
VGS=2.5V, ID=5.2A - - 80 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.5 V
gfs Forward Transconductance VDS=5V, ID=10A - 10 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=16V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=10A - 5 8 nC
Qgs Gate-Source Charge VDS=16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC
2
td(on) Turn-on Delay Time VDS=10V - 8 - ns
tr Rise Time ID=10A - 55 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=5V - 10 - ns
tf Fall Time RD=1 - 3 - ns
Ciss Input Capacitance VGS=0V - 360 580 pF
Coss Output Capacitance VDS=20V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
Rg Gate Resistance f=1.0MHz - 1.67 -

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=10A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2 IS=10A, VGS=0V, - 17 - ns
Qrr Reverse Recovery Charge dI/dt=100A/s - 9 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9T15GH/J

50 40

o
T C =25 C T C = 150 o C
40
5.0V 5.0V
4.5V 4.5V
ID , Drain Current (A)

ID , Drain Current (A)

30

30

3.5V 20 3.5V
20

2.5V 10 2.5V
10

V G =1.5V V G =1.5V

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

45 1.8

I D =6A
43 I D = 5.2 A 1.6
V G =4.5V
o
T C =25 C
Normalized RDS(ON)
RDS(ON) (m)

41 1.4

39 1.2

37 1.0

35 0.8

33 0.6
0 2 4 6 8 10 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 2.0

8
Normalized VGS(th) (V)

1.5

6
IS(A)

T j =150 o C T j =25 o C 1.0

0.5
2

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9T15GH/J

f=1.0MHz
14 1000

I D =10A
12
VGS , Gate to Source Voltage (V)

V DS =10V C iss
10
V DS =12V
V DS =16V
8

C (pF)
100

6
C oss
C rss
4

0 10
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor = 0.5

Operation in this
area limited by
RDS(ON)

100us 0.2
10
ID (A)

0.1

1ms 0.1
0.05

10ms
1 100ms 0.02
PDM

t
DC
T
0.01
o
T c =25 C
Duty Factor = t/T
Single Pulse Single Pulse
Peak Tj = PDM x Rthjc + T C

0.1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform