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Dielectrics
R 340,
Rm. 340 D
Department
t t off El
Electrical
t i l Engineering
E i i
E-mail: rbwu@ew.ee.ntu.edu.tw
url: cc.ee.ntu.edu.tw/~rbwu
R. B. Wu
1
Tx-Line Losses
Polarization of Dielectrics
Dielectric losses
Environmental & Localization Effects
Measurements
R. B. Wu
2
Freq.-Dependent Dielectric Constants & Losses
Loss tangent
t d =
tan = ;
2f
From R, L, C, then
G= (2fC11 )
Dielectric constant
r = rsn Vrsn + gls Vgls ;
Ref.: S. Mumby, Dielectric properties of FR-4 laminates as a function of thickness and the electrical
R. B.
frequency of measurement (IPC-IP-749), Inst. Interconnect. & Packag. Electron. Wu1988.
Circuits,
1:1
2:1 c
R. B. Wu
3
Polarization of Dielectrics
Electronic Polarization
When electric field applied,
electron cloud is displaced until
f
force b t
between +/-
+/ charges
h equall
the force of applied field.
Electric inside electron cloud:
G qe r
E = rE
r ; Er =
4 0 re3
Electric dipole moment:
G G
p = qe r p = e Er
electronic polarizability:
e = 4 0 re3
Polarization vector:
G G
P = Np; N : # atoms per unit volume R. B. Wu
4
Other Polarizations
Orientational (dipole)
polarization
p = o E
Ionic (molecular)
polarization
p = i E
R. B. Wu
Relative Permittivity
Usually measured rather than calculated.
Polarizability
G G
P = N ( e + o + i ) Etot
Electric flux density:
G G G
D = 0 E0 + P
G G G G G G G
Et = E 0 + E s ; E 0 = f ( P ) P E 0
G G G G
D = E0 = 0 r E0 = 0 ((1 + ) E0
: electric susceptibility
r : relative dielectric permittivity
R. B. Wu
5
Dielectric Loss
Dielectric Losses
9 Classic model of dielectric losses derived from damped
oscillations of electric dipoles in the material aligning with the
applied fields
Dipoles oscillate with the applied time varying field this takes energy
9 Dielectric constant becomes complex with losses
9 PWB board manufacturers specify this was a parameter called
Loss Tangent or Tan
''
= ' j '' Tan =
'
9 The real portion is the typical dielectric constant, imaginary
portion represents losses, or conductivity of the dielectric
1
dielectric = = 2 f ''
dielectric
12 Interconnect: Adv
R. B. Wu
6
DC Dielectric Losses
Due to conduction electrons in dielectric
G G
J = d E
G G G G G
H = J + j E = d E + j ( j ) E
G
= j 0 r j r j d E
0
Do not confuse d discussed here with dielectric,which is
d e to the energ
due energy it takes to polarize
polari e the electric dipoles in
dielectric.
The term d is small and usually neglected.
R. B. Wu
Single-Pole Model
Mechanical spring model analogy
q E0 m k
mx + bx + kx = F x = ; 02 =
+ j (b m )
2
0
2
m
G G P N ( q 2 0m )
P = Nqx = = 2 r
0 E0 0 2 + j ( b m )
N ( q 2 0m ) (02 2 )
r = 1 +
( ) + ( b m )
2 2
2 2
0
N ( q m) (b m )
2
0
=
( ) + ( b m )
2 2
r
2 2
0
R. B. Wu
7
Multipole Model
Several resonance: n N i ( q 2 0mi )
r = 1 +
i =1 i2 2 + j ( bi mi )
A more pragmatic approach
n
i d
r = + j
1 ( 1,i ) + j ( 2,i ) 0
2
i =1
R. B. Wu
PCB Example
1 2
r peaks two poles: r = + +
1 + j 1 1 2 + j 3
2
22
2
4
8
Infinite-Pole Model
One freq. only model?
n
i 2
1 dy
r = + r = +
i =1 1 + j ( 2,i ) ln 2 ln 1 1 1 + j ( y ) y
ln [(2 + j ) (1 + j )] ln (2 ) 2
r = + + j
ln (2 1 ) 1 << <<2 ln (2 1 ) ln (2 1 )
Ex. : r / tan = 3.9 / 0.0073@1G
choose 2 = 1011, 1 = 10
= 3.9 0.0073 = 0.028
= 0.417
= 3.9@1G
= 3.85
() 3.85 + 0.0178ln (10 ) 11
tan = = 0.028
(
3.85+0.0178ln 1011 )
R. B. Wu
( 0 )
tan 1
<
0 ++ =
1 + ( 0 )
0 2
0
= +
+
= ( ) 1
R. B. Wu
9
Causality
Kramers-Kronigs relations,
between real and imaginary parts of any complex function that is
analytic in the upper half
half-plane:
plane: 2 x ( x )
G G
P(t ) = (t ) E0 ( )d
( ) = 1 +
0 x2 2
dx
( ) = ( )
0
0+ r
Im( )= R. B. Wu
( 0
i ) + r
2 2
R. B. Wu
10
Environmental & Localization
Effects
significantly.
22
R. B. Wu
11
Fiber-Weave Effects & Mitigation
Worse-case difference
+ r ,eff 0.23
R. B. Wu
Trace between
b bundles
b dl
r ,eff = 3.5 r 4.6
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12
Humidity & Temperature Effects
Material: FR4-7628
Arizona (15% RH, 60oF)
Effects:
Large increase in losstan
(+50% from 15-95% RH)
Small increase in r Malaysia (95% RH, 95oF)
R. B. Wu
R. B. Wu
13
Measurement of Dielectric Constants
27
Waveguides
Measuring S-parameters of filled waveguides to derive
propagation constant
Costly, available above fcutoff
c
f cutoff =
2a r
2 r
k=
0
14
Substrate-Integrated Waveguide
Two SIW (Substrate-Integrated Waveguide) to calculate
FDEW (Freq.-Dependent Equivalent Width)
a
Unknown conductive attenuation ain
Available above fcutoff
s
Wave Propagation
1 2 4 r
+ = 2
a 2 2 0
1 2 4 r
+ = 2 a a =
a2 2 0
C. H. Tseng and T. H. Chu, Measurement of frequency-dependent equivalent width of substrate
integrated waveguide, T-MTT, pp. 1431-1437, Apr. 2006. R. B. Wu 29
Cavity Resonance
Observing resonant frequencies and Q factors a
Edge effect
b
Bad resolution at higher modes
2 2
c m n
f mn = +
r 2 a 2b
2
c m n
2 2
r = +
f mn 2a 2b
A. Namba, et al., and T. Watanabe, A simple method for measuring the relative
R. B. Wu
30
permittivity of printed circuit board materials, T--EMCpp. 515-519, Nov. 2001.
15
Ring Resonator
Periodical resonance
Difficult feeding and coupling loss
c n
fn =
r ,eff 2 a 2
c n
2
r ,eff =
f n 2 a
T-stub
Periodical resonance
Acquiring
q g attenuation constant from ||S21|
Drawbacks of resonance method:
Limited by the fixture dimension
Sensitive to determination of resonant freq.
Z in ,res = Z 0 P
(2n + 1)c
f res =
4 P eff ( f ) Z0 Zin Z0 2Z in
S 21 =
2Z in + Z 0
J.-H. Liu, Y.-C. Lin, J.-T. Lue, and C.-J. Wu, Resistivity measurements of
layered metallic films at various microwave frequencies and
R. B. Wu
32
temperatures using the micro-strip T-junction method, Meas. Sci.
Technol. 13, pp.1132-1137, Apr. 2002.
16
Time-Domain Tx-Line Measurement
Observing the TDT pulse response
q
Require perfect
p match
Microstrip Line
Probe Dielectric Probe
Delay Ground
TDT
Incident Attenuation
Pulse Transmitted
P l
Pulse
Time
Microstrip Line [S ] [T ] el
Probe Dielectric Probe = + j
Ground
2
= c + d r,eff =
0 0
= 0 0 r,eff 2 d
tan eff =
M. Cauwe and J. De Baets, Broadband material parameter characterization for
practical high-speed interconnects on printed circuit board, T-AdvP, R. B. Wu
34
pp.649-656 Aug 2008
17
Pros & Cons of Tx-Line Method
1. S-parameter Measurement
Use VNA built-in TRL calibration to capture scattering
parameters of an ideal tx-line
All connectors are assumed identical
18
TRL calibration
TRL works well except
when q ~ /2,
1
,
2 sin
P is chosen /4 of max.
freq. to minimize higher
order wave
Reference Plane
VNA VNA
L port 1
||=0 ||=0
port 2
p q
R. B. Marks, A multiline method of network analyzer calibration, T-MTT,
pp. 1205-1215, Jul. 1991.
R. B. Wu
37
2. Transmission Matrix
The S-parameters can be transformed to ABCD
transmission matrix
1 (1 + S11 )(1 S 22 ) + S12 S 21 (1 + S11 )(1 + S 22 ) S12 S 21
[T ] =
2 S 21 (1 S11 )(1 S 22 ) S12 S 21 (1 S11 )(1 + S 22 ) + S12 S 21
19
3. Propagation Constant Solution
Solving complex eigenvalue for [T], they are
fx. of propagation constant & line length:
cosh l Z 0 sinh l
[T ] = 1 1 , 2 = e l
sinh l cosh l
Z0
1 1
let = 1 + = e +l
2 2
B
By selecting
l ti correctt roott andd phase,
h
propagation constant is obtained:
= + j
+ 2n
= ln = 39
l
R. B. Wu
Substrate Parameters
Because , satisfy
= c + d = 0 0 r,eff
From reverse operation:
2
1
r ,eff =
0 0
2 d
d = c tan eff =
The
h conductive
d i attenuation i can be
b calculated
l l d by b
simulating the same structure with no loss substrate
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40
20
Simulation: Parallel Plate Cavity
Simulating a parallel plate PCB with feeding port at center,
default relative dielectric constant=4, loss tangent=0.02
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41
Simulation software: Ansoft HFSS v11
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42
Simulation software: Ansoft HFSS v11
21
Simulation -Stripline
Results fit with each other but suffer from
plate mode and finite conductivity
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43
Abnormal ripple due to plate resonance
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44
22
Stripline with Via Fence
D
W x
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45
Simulation software: Ansoft SIwave v3.0
satisfy D < m = 1 c
y
2 2 fm r W x
1 c
f cutoff =
2 D r
R. B. Wu
46
23
Via Fence Design Guide (2/3)
Small D lowering characteristic impedance is
unfavorable in transmission
80% ground current are concentrated in 3h region
below signal line, H=2h, it is better choose that:
D > 3H D > 3W D
1
I gs 2
z
D H
1+ y
h
W x
47
S. H. Hall, G. W. Hall, and J. A. McCall, High-Speed Digital System Design,
New York: Wiley, 2000. R. B. Wu
z
H
y
W x
24
Conductor Internal Inductance
The current flowing inside the conductor contributes to
inductance effect
= LC
Determined by W
rather than H
0t
Lint low freq
4w
Rac
Lint
49
R. B. Wu
25
Internal Inductance Effect
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51
Si
Simulating
l ti for
f loss
l ratio
ti
rather than exact loss value
Two sets of tx-line made with
different conductive
attenuation
W1 W2
1 = c1 + d 2 = c2 + d
Simulate for the attenuation
ratio:
c1
=
c2
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52
26
Attenuation Ratio (2/2)
Then acquire dielectric attenuation:
1 = c1 + d 1 2 2 d
d = tan =
2 = c2 + d 1
p=25.4mm (~0.25@1.48GHz)
q=30.48mm(~0.5@2.46GHz) S = 2 mm
Reference Plane
VNA VNA
L port 1
||=0 ||=0
port 2
p q
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54
27
Measured S-parameters
Resonance suppressing is design to 18 GHz but the
results stay valid only until 14GHz
R. B. Wu
55
Conductive
Use loss ratio to split
p conductive attenuation
att. =1.2 and
dielectric attenuation
Kappa=1.67,
error amp. =4
Conductive
att. =2
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56
28
Experimental Result
Th
The slight
li ht difference
diff in
i
dielectric constant
attributes to error of
internal inductance
estimation
Increase in loss tangent
implies loss growth with
frequency more than 1
degree, making it
unsuitable at high
frequencies
R. B. Wu
57
Conclusions (1/2)
A characterization method using stripline with via fence is
presented. It is suitable for investigate
p g multi-layer
y PCBs
properties
Via fence design should satisfy D
m
1
D< =
c
but D > 3W
2 2 fm r z
D > 3H H
y
29
Conclusions (2/2)
The smaller substrate thickness and line width, the lager
internal inductance and corresponding effect in dielectric
constant. It is small, but may be no longer negligible in
advanced process
Calculating attenuation by simulating loss ratio is
applicable in material under special process or treatment
c1
1 = c1 + d =
c2 1 2 2 d
d = tan =
2 = c2 + d 1
59
R. B. Wu
30