Assignment 1_MOS Modelling

Q. 1 S
Assume that the inversion in an MOS capacitor occurs when the surface potential ( is
B
twice the value of bulk potential ( . What is the maximum depletion width at room
temperature of a structure where the p-type silicon is doped at Na = 5 x 1016/cm3
Q. 2 Consider a p-type silicon doped to 3 10 16 cm3. The SiO2 has a thickness of 500 A . An n+
polysilicon gate is deposited to form the MOS capacitor. The flat band voltage Vfb = 1.13
V for the system; temperature = 300 K. Calculate the
threshold voltage if there:
(a) is no fixed oxide interface charge
(b) is an fixed oxide interface charge of 1011cm2.
Q.3 ms
Consider a silicon NMOS device at 300 K characterized by = 0, NA = 4 1014 cm3,
t ox
= 200 A, L = 1 m , W = 10 m .
Calculate the drain current for a gate voltage of VGS = 5 V and drain voltage of 4 V. The
electron mobility in the channel is 700 cm2/Vs.

Q.4 Consider an NMOS transistor with the following parameters: tox = 6 nm, L = 0.24 m ,

W=
0.36 m , L = L = 0.625 m , CO = 3 x 1010 F/m, C = 2 x 103 F/m2, Cjsw0 =
D S j0

2.75x1010
F/m.
Determine the zero-bias value of all relevant capacitances.
Q.5 Simulation Assignment: Plot the Threshold Voltage of PMOS with source to body potential.

Q.6 & 7 Problems given in lecture.