VALLIAMMAI ENGINEERING COLLEGE

SRM Nagar, Kattankulathur 603 203

DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING

QUESTION BANK

II SEMESTER
EC6201 ELECTRONIC DEVICES
Regulation 2013
Academic Year 2016 17

Prepared by
Mr.T.V.Sudhir, Assistant Professor/ECE
Ms.S.Surabhi, Assistant Professor/ECE


VALLIAMMAI ENGINEERING COLLEGE

SRM Nagar, Kattankulathur 603 203.

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

QUESTION BANK
SUBJECT : EC6201 ELECTRONIC DEVICES
SEM / YEAR: II / I year B.E.ECE

UNIT I SEMICONDUCTOR DIODE

PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse
bias Characteristics, Switching Characteristics.
PART A
Q.No Questions BT Level Competence

1. Define mass action law. BTL 1 Remember

2. What is the principle operation of PN junction in reverse bias BTL 1 Remember
condition?
3. Create a Si PN junction at T=300K with doping concentrations BTL 6 Create
of Na=1010cm-3.assume that in=1.5*1010cm-3.calculate width of
the space charge region in a PN junction when a reverse bias
voltage Vr=5v is applied.
4. Define diffusion current and drift current. BTL 1 Remember
5. Point out why silicon is always preferred than germanium? BTL 4 Analyze
6. Show the expression for drift current density. BTL 3 Apply
7. Distinguish between intrinsic and extrinsic semiconductor. BTL 2 Understand
8. Give the expression for diffusion current density. BTL 2 Understand
9. Define diffusion current. BTL 1 Remember
10. Identify the expression for depletion region width in PN BTL 4 Analyze
junction.
11. Distinguish between avalanche and Zener breakdown? BTL 2 Understand
12. Compare the silicon and germanium diodes with respect to cut BTL 5 Evaluate
in voltage and reverse saturation current.
13. Demonstrate the equation for drift current density and BTL 3 Apply
diffusion current density due to electron and hole.
14. Formulate the diode current equation. BTL 6 Create
15. List the types of recovery time and define it. BTL 1 Remember
16. Analyze the V-I characteristics of PN diode. BTL 4 Analyze
17. Discuss storage and transition time. BTL 2 Understand
18. Explain the applications of PN diode. BTL 5 Evaluate


19. Examine the energy band structure of PN junction diode. BTL 3 Apply
20. What is breakdown voltage or Peak inverse voltage? BTL 1 Remember
PART B
1. Describe the theory of PN junction and derive its diode current BTL 1 Remember
equation.(16)
2. Identify and derive current components and switching BTL 1 Remember
characteristics of diode. (16)
3. Demonstrate the operation of PN Junction under zero voltage BTL 3 Apply
applied bias condition and derive the expression for built in
potential barrier. (16)
4. Design the diode with built in potential barrier in a PN BTL 6 Create
junction. Consider a silicon PN junction at 300k with doping
densities Ns=1*1018cm-3 and Nd=1*1015 cm-3.assume
ni=1.5*1010 cm-3. (16)
5. Examine the quantitative theory of PN diode currents. (16) BTL 1 Remember
6. (i) Explain the basic structure of the PN junction.(8) BTL 4 Analyze
(ii) Illustrate the concept of breakdown in diodes.(8) BTL 4 Analyze
7. Explain in detail about the switching characteristics of PN BTL 4 Analyze
diode with neat sketch. (16)
8. Explain the position of Fermi level in extrinsic semiconductor BTL 2 Understand
using the energy band diagram and obtain relation for the
same. (16)
9. Evaluate the expression for transition capacitance and diffusion BTL 5 Evaluate
capacitance of a PN diode. (16)
10. (i) Explain the operation of PN junction under forward bias BTL 2 Understand
condition with its characteristics.(8) BTL 2 Understand
(ii) Explain the drift and diffusion currents for PN diode.(8)
11. Recall intrinsic semiconductor and derive an expression for BTL 1 Remember
conductivity for an intrinsic semiconductor (16)
12. (i)The current flowing a certain PN junction at room BTL 4 Analyze
temperature is 2*10-7 A , when a large reverse bias voltage is
applied. Analyze the current flowing when 0.2V is applied? (8)
(ii)If the reverse saturation current in a PN junction silicon
diode is 1nA , find the applied voltage for a foreward current of
0.5 A (8)
13. Demonstrate an expression for Fermi level in p-type and n-type BTL 3 Apply
semiconductor. (16)
14. (i)Estimate the voltage when the reverse current in a PN BTL 2 Understand
junction diode reach 80% of its saturation value at room
temperature.(8)
(ii)An ideal germanium diode has reverse saturation current of


20A. Predict the dynamic resistance for a forward bias of

0.05V (8)

UNIT II BIPOLAR JUNCTION

NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE,
CB CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi
Emitter Transistor.
PART A
Q.No Questions BT Level Competence

1. Define a transistor. BTL 1 Remember

2. Explain the bias conditions of base emitter and base collector BTL 2 Understand
junction for a transistor to operate as an amplifier.

3. Compare the formula for dc alpha and dc beta BTL 4 Analyze

4. Summarize the relationship between and BTL 2 Understand

5. Illustrate how amplification and switching are achieved by BTL 2 Understand
BJT?

6. How would you show your understanding of dc beta BTL 3 Apply

7. Design the Hybrid pi model . BTL 6 Create
8. Analyze the bias condition of base emitter and collector base BTL 4 Analyze
junction to operate a transistor in cut-off region.

9. Calculate the value of if a transistor has a of 0.97 find the BTL 3 Apply
value of . If =200.

10. Produce the Gummel Poon Transistor Model BTL 6 Create

11. Outline the basic structure of BJT BTL 1 Remember

12. Solve the emitter current , when the collector current is 2mA BTL 5 Evaluate
and base current is 25A
13. List the three terminals of BJT BTL 1 Create

14. Identify the other name of early effect and explain the same BTL 1 Remember

15. Point out the different ways of transistor breakdown. BTL 4 Analyze

16. State early effect. What are the consequences of it? BTL 1 Remember

17. Calculate and IE for a transistor if IB = 50A and Ic = 3.6 BTL 3 Apply


mA.

18. Deduce the concept of avalanche multiplication BTL 5 Evaluate

19. Recall the different configurations of BJT BTL 1 Remember

20. Explain which amplifier has the lowest input impedence. BTL 2 Understand

PART B
1. Explain h-model and -model in detail. (16) BTL 4 Analyze
2. Show How multi emitter transistor is working? Explain it with BTL 3 Apply
neat diagram. (16)
3. Evaluate the hybrid parameters for a BTL 5 Evaluate
basic transistor CC, CE configuration and give its hybrid mod
el. (16)
4. (a) Outline short notes on: (i) Early effect (ii) ebers BTL 4 Analyze
moll model for BJT.(8) (b)Develop
the comparison of CE,CC,CB configuration. (8) BTL 4 Analyze

5. (i)Develop BTL 6 Create

the input and output characteristics of a transistor in CC conf
iguration.(10) BTL 6 Create
(ii)Formulate the relationship between , , .(6)
6. Describe the operation of BJT and its types. (16) BTL 1 Remember
7. Describe the Ebers Moll model for a PNP transistor. (16) BTL 1 Remember

8. Express the derivation for f and Draw the hybrid model of BTL 2 Understand
BJT? (16)
9. Give the input and output characteristics of a transistor in CB BTL 2 Understand
configuration. (16)
10. Describe the Ebers Moll and Gummel Poon-model. (16) BTL 1 Remember

11. List the input and output characteristics of a transistor in CE BTL 1 Remember
configuration. (16)

12. (i)In a common base connection IC=0.96 mA and IB=0.05 mA. BTL 3 Apply
Compute the value of ? (8)
(ii)Solve the emitter current in a transistor whose =50 ,
IB=25A (8)

13. Distinguish the circuit and operation of PNP and NPN BTL 2 Understand
transistor with neat diagram. ( 16)

14. A CB transistor amplifier has voltage source with RS=750 BTL 4 Analyze
and the load resistance RL=1.5K .The h-parameters are


hib=25 , hrb=4*10-4 , hfb= -0.98 and hob= 0.2A/V . Calculate

AI , RI , AV , AVs , AIs, Ro , AP (16)

UNIT III FIELD EFFECT TRANSISTORS

JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance-
MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET-
,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.

PART A

BT
Q.No Questions Competence
Level

1. Analyze in which region JFET acts as a resistor and why? BTL 4 analyze

2. Differentiate between JFET and BJT? BTL 2 Understand

3. Define amplification factor in JFET. BTL 1 Remember

4. Deduce the V-I characteristics curve of MOSFET BTL 5 Evaluate

5. Point out the advantages of MOSFET compared to JFET? BTL 4 Analyze

6. Compare JFET & MOSFET? BTL 4 Analyze

7. List the advantages of FET? BTL 1 Remember

8. What are the two modes of MOSFET? BTL 1 Remember

9. Deduce the drain current equation of JFET? BTL 5 Evaluate

10. Define Tranconductance (gm)? BTL 1 Remember

11. Formulate the relationship between various FET parameters? BTL 6 Create

12. Relate How JFET act as VVR? BTL 3 Apply

Examine why Depletion MOSFET is commonly known as Normally

13. BTL 3 Apply
on MOSFET?

Classify the three regions that are present in the drain source
14. BTL 3 Apply
characteristics of JFET?

Differentiate between current voltage relationships of the N channel

15. BTL 2 Understand
and P channel MOSFET.

16. Summarize Shockleys equation. BTL 2 Understand



17. Interpret the advantages of FINFET? BTL 2 Understand

18. Define pinch-off voltage. BTL 1 Remember

19. Describe drain resistance BTL 1 Remember

Construct the maximum and minimum transfer characteristic for a

20. JFET and the information provided from the data sheet is Vp = V BTL 6 Create
as(off) = 2V(min), 8V(max) IDSS =4 mA(min),16 mA(max)

Part B

Explain the four distinct regions of output characteristics of the JFET?

1. BTL 4 Analyze
(16)

With the help of suitable diagram explain the working of different

2. BTL 4 Analyze
kinds of MOSFET? (16)

3. Describe some applications of JFET? (16) BTL 1 Remember

a.Discuss about FINFET and dual gate MOSFET? (8) BTL 2 Understand
4.
b. Compare the difference between JFET &MOSFET? (8) BTL 2 Understand

Deduce the V-I equation of a MOSFET and draw the characteristics in

5. BTL 5 Evaluate
the depletion mode and enhancement mode. (16)

Compare the following

BTL 2 Understand
6. a) D-MOSFET & E-MOSFET. (8)
BTL 2 Understand
b) n-channel MOSFET & p channel MOSFET (8)

Construction, operation and characteristics of a p-channel JFET. BTL 6

7. Calculate the various FET parameters from the above characteristics. Create
(16)

BTL 3
Illustrate the conditions for a transistor to operate as a switch. Discuss
8. Apply
the charge control approach to hybrid model of a transistor. (16)

Describe Earlys Base width in a transistor. How does it affect the input
9. BTL 1 Remember
and output characteristics? (16)

Explain the FINFET circuit model with necessary diagrams &

10. parameters? And the Dual gate MOSFET circuit model with necessary BTL 1 Remember
diagrams & parameters? (16)

Recall the symbol and operation of p-channel JFET and N-channel

11. BTL 1 Remember
JFET with neat diagrams (16)


BTL 3
Illustrate and compare the operation of depletion MOSFET and
12. Apply
enhancement MOSFET (16)

13. Discuss the differences between BJT and FET. (16) BTL 2 Understand

Outline the classification of the FET family and explain each

14. BTL 4 Analyze
component in detail. (16)

UNIT IV SPECIAL SEMICONDUCTOR DEVICES

Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel

diode- Gallium Arsenide device, LASER diode, LDR.
PART A

BT
Q.No Questions Competence
Level
1. What is Metal Semiconductor Junction? Remember
BTL 1
2. Remember
Write short notes on MESFET. BTL 1
3. Define Zener diode. Remember
BTL 1
4. Compare MOSFET and MESFET. BTL4 Analyze
5. Discuss the Zener breakdown voltage. BTL 2 Understand
6. List out the applications of Zener diode and Schottky diode BTL 1 Remember
7. Describe the negative resistance of Tunnel diode.
BTL 2 Understand
8. Explain Tunneling Phenomenon. BTL 4 Analyze
9. What are the differences between a Tunnel diode and an ordinary PN
junction diode? BTL 4 Analyze

10. Identify the symbol and structure of Schottky diode. BTL 2 Understand
11. Draw energy band diagram of Metal and Semiconductor before and
after conduction is made. BTL 3 Apply

12. What is Gallium Arsenide Device (GaAs)? BTL 1 Remember

13. Sketch the V-I characteristics curve for Zener diode. BTL 3 Apply
14. Develop the Tunnel Diode Oscillator circuit. BTL6 Create
15. Illustrate the equivalent circuit for Tunnel diode. BTL 3 Apply


16. Describe the working principle of Varactor diode. BTL 2 Understand

17. If the Zener Impedance is greater than the specified value, what will be
the output voltage (more or less)? BTL 6 Create

18. For certain Zener diode VZ=10v at IZT=30mA, if ZZ=8, Determine the
terminal voltage at IZ=50mA? BTL 5 Evaluate

19. Expand: LASER, LDR. BTL 1 Remember

20. Determine diode capacitance value from Varactor tuning ratio. BTL 5
Evaluate

PART B
1. i) Illustrate the V-I Characteristic curve and explain the operation of BTL 4 Analyze
Zener diode. (8)
ii) Compare Avalanche and Zener breakdown. (8) BTL 4 Analyze
2. Illustrate how a Zener is used in voltage regulation. (16) BTL 3 Analyze
3. Describe the Variable Capacitance characteristics of a Varactor diode BTL 2 Understand
and analyze its operation in typical circuit. (16)
4. Determine the Current- Voltage relationship of a Schottky Barrier BTL 5 Evaluate
diode and discuss its operation. (16)
5. i) Consider an n-channel GaAs MESFET at T=300k with a gold BTL 5 Evaluate
Schottky Barrier contact. Assume the Barrier height is Bn=0.89v. The
n-channel doping is Nd=2x1015cm-3. Determine the channel thickness
such that VT=+0.25v. Also NC=4.7x1017cm-3 and r of GaAs=13.1. (8)
ii) What is the working principle of Metal semiconductor junction? (8) BTL 1 Remember
6. Discuss the operation of Tunnel diode using energy band diagram and BTL 2 Understand
the characteristics of tunnel diode. (16)
7. Analyze the construction details and working principle of LASER BTL 4 Analyze
diode. (16)
8. Write short notes on LDR and list out its applications. (16) BTL 1 Remember
9. Give the working principle of Gallium Arsenide Device with neat BTL 1 Remember
diagram. (16)
10. i) Develop a circuit for Tunnel diode oscillator. (8) BTL 6 Create
ii) A 24V, 600mW Zener diode is used for providing a 24V stabilized
supply to a variable load. If the input voltage is 32V, propose (a) The BTL 6 Create
value of series resistance required (b) Diode current when the load is
1200. (8)
11. Define the Metal n-type and Metal p-type semiconductor contact with BTL 1 Remember
suitable diagrams. (16)
12. Describe the concept of tunneling? Explain the VI characteristics of a BTL 2 Understand
tunnel diode using energy band diagram. (16)
13. i) Interpret the forward biasing and reverse biasing of metal- BTL 3 Apply
semiconductor junction along with energy band diagrams. (8)
ii) Show the structure and operating principle of MESFET. (8)
14. i) Analyze tunnel diode and varactor diode using energy band BTL 4 Analyze
diagrams (8)
ii) Outline the operation of zener diode and the conventional p-n
junction diode. (8)


UNIT V POWER DEVICES AND DISPLAY DEVICES

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
PART A

BT
Q.No Questions Competence
Level
1. What is SCR? Mention its applications. BTL 1 Remember
2. Why SCR cannot be used as a bidirectional switch? BTL 1 Remember
3. Compare BJT and UJT. BTL 4 Analyze
4. What is Diac? List out its applications. BTL 1 Remember
5. Define Triac and mention its applications. BTL 1 Remember
6. Draw the two transistor equivalent circuit of SCR. BTL 3 Apply
7. Identify a Diac or Triac by the schematic symbol. BTL 2 Understand
8. List the applications of UJT. BTL 1 Remember
9. Describe the working principle of an LED and its applications BTL 2 Understand
10. Sketch the V-I characteristics of UJT. BTL 3 Apply
11. How does Triac differs from Diac? BTL 4 Analyze
12. Show the V-I characteristics for Triac. BTL 3 Apply
13. A solar cell is a PN junction device with no voltage directly applied
across the junction. If it is so, how does a solar cell deliver power to BTL 6 Create
load?
14. Compare Triac with SCR. BTL 4 Analyze
15. Express the equation for standoff ratio. BTL 2 Understand
16. Determine the peak point emitter voltage Vp if VBB=20v and VPN=0.7v
for certain UJT gives =0.6. BTL 5 Evaluate

17. If positive voltage is applied to gate, plan what happens in DMOS? BTL 6 Create
18. Discuss the types of opto couplers. BTL 2 Understand
19. Evaluate maximum irradiance at a distance of 10 cm from the LED BTL 5 Evaluate


source and maximum power is 15 mw/Sr.

20. Define CCD and Solar cell. BTL 1 Remember

PART B
1. Give the working principle of UJT with the help of equivalent circuit.
BTL 1 Remember
(16)
2. i)Discuss the characteristics and working principle of SCR and list out
its applications. (8) BTL 2 Understand
ii) Explain the significance of optocouplers. (8) BTL 2 Understand

3. Analyze the spectral output curves and radiation pattern of LED. (16) BTL 4 Analyze
4. i) Outline the structure of Phototransistor and explain its operation. (8) BTL 4 Analyze
ii) Explain Power MOSFET & Power BJT in detail. (8) BTL 4 Analyze
5. Demonstrate the construction details and working principle of Diac and BTL 3 Apply
Triac. (16)
6. i) Write short notes on the modes of operation of LCD(8) BTL 1 Remember
ii) Design a two transistor model of SCR. (8) BTL 6 Create
7. i) Give a brief note on CCD. (8) BTL 1 Remember
ii) Format three phase CCD operation. (8) BTL 6 Create
8. What is the working principle of solar cell and opto couplers? (16) BTL 1 Remember
9. Describe the structure and operation of Power BJT and Power BTL 2 Understand
MOSFET.(16)
10. Determine the operation of UJT relaxation oscillator and R1 value from BTL 5 Evaluate
the conditions for turn-on and turn-off.(16)
11. i) Recall the operation of a DMOS and VMOS transistor (8) BTL 1 Remember
ii) Describe the operation of LED and CCD and list out its application
(8)
12. i) Explain the VI characteristics of SCR. (8) BTL 2 Understand
ii) Summarize the operation of SCR and Triac. (8)
13. i) Illustrate the construction, symbol and characteristics of photovoltaic BTL 3 Apply
cell. (8)
ii) Interpret the working of phototransistor & optocoupler. (8)
14. i) Analyze the concept of LED and LCD. (8) BTL 4 Analyze
ii) Point out the construction and working principle of LCD. (8)