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Fuse:
Memory effect (in NiCd only) does not occur very often; it
describes one very specific situation in which certain NiCd
batteries gradually lose their maximum energy capacity if they
are repeatedly recharged after being only partially
discharged. The battery appears to "remember" the smaller
capacity.
Angular frequency, = 2f
S = apparent power
P = true/active/real power
Q = reactive power
S2 = P2 + Q2
P = power factor * S
Reactive factor = 1 PF = sine of phase angle = Q / S
Transformer:
ZO = sqrt (ZIN*ZL)
1.Drain voltage
2.Gate voltage
3.Gate bias
JFET P-CH drain is negative wrt source (-VDD); just like PNP
BJT
Telechir telepresence
FLOYD
Electroluminescence emitting photons from a SEMICONDUCTIVE
material
For BJT IE = IC + IB
IC = DCIE = DC/(DC+1)
To operate in active region (for Si) 0.7V < VCE < VCE(MAX)
Emitter bias provides good Q-point but requires (+) and (-)
supply voltages