GT40T301

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm

FRD included between emitter and collector

Enhancement-mode
High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A)
FRD : trr = 0.7 s (typ.) (di/dt = 20 A/s)
Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)

Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 1500 V

Gate-emitter voltage VGES 25 V
DC IC 40
Collector current A
1 ms ICP 80

Emitter-collector forward DC IECF 30

A JEDEC
current 1 ms IECPF 80
JEITA
Collector power dissipation (Tc =
PC 200 W
25C) TOSHIBA 2-21F2C
Junction temperature Tj 150 C
Weight: 9.75 g (typ.)
Storage temperature range Tstg 55~150 C

Equivalent Circuit

Collector

Gate

Emitter

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES VGE = 25 V, VCE = 0 500 nA

Collector cut-off current ICES VCE = 1500 V, VGE = 0 1.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 7.0 V
Collector-emitter saturation voltage VCE (sat) IC = 40 A, VGE = 15 V 3.7 5.0 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz 2900 pF
Rise time tr 0.40
51

15
Turn-on time ton 0.45
Switching time 15 V s
Fall time tf 0 0.23 0.40
15 V
Turn-off time toff 600 V 0.6
Emitter-collector forward voltage VECF IECF = 30 A, VGE = 0 1.9 2.5 V
Reverse recovery time trr IECF = 30 A, VGE = 0, di/dt = 20 A/s 0.7 3.0 s
IGBT 0.625
Thermal resistance Rth (j-c) C/W
Diode 1.25

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IC VCE VCE VGE

100 10
25 20 15 Common emitter

(V)
Tc = 40C
12
80 8
(A)

Collector-emitter voltage VCE

60
IC

60 6 40
Collector current

20
80
40 10 4

IC = 10 A
20 2

VGE = 8 V

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V)

VCE VGE VCE VGE

10 10
Common emitter
(V)
(V)

Tc = 25C
8 8
Collector-emitter voltage VCE
Collector-emitter voltage VCE

80
6 80 6
60
60
40 40
4 4
20 20

IC = 10 A
2 2 IC = 10 A
Common emitter
Tc = 125C
0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

IC VGE VCE (sat) Tc

100 10
Common emitter Common emitter
VCE = 5 V VGE = 15 V
Collector-emitter saturation voltage

80 8
(A)
IC

VCE (sat) (V)

60 6 80
Collector current

60

40 4 40
25
20

20 2 IC = 10 A
Tc = 125C

40
0 0
0 4 8 12 16 20 80 40 0 40 80 120 160

Gate-emitter voltage VGE (V) Case temperature Tc (C)

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VCE, VGE QG Switching time RG

10
Common Common emitter
Collector-emitter voltage VCE (10 V)

emitter VCC = 600 V

30 5

(s)
Gate-emitter voltage VGE (V)

RL = 7.5 IC = 40 A
Tc = 25C 3 VGG = 15 V
Tc = 25C

Switching time
toff
ton
20
tr
1

300 0.5 tf
200
10
0.3

VCE = 100 V

0 0.1
0 40 80 120 160 200 240 280 1 3 5 10 30 50 100 300 500 1000

Gate charge QG (nC) Gate

resistance RG ()

Switching time IC C VCE

10 10000
Common emitter
5000
5 VCC = 600 V
3000
3 RG = 51 Cies
VGG = 15 V
1000
(pF)

Tc = 25C
(s)

1 toff 500
300
C

0.5 ton
Switching time

Coes
tr
Capacitance

0.3 100
tf
50
30 Cres
0.1

10 Common emitter
0.05
VGE = 0 V
0.03 5
3 f = 1 MHz
Tc = 25C
0.01 1
0 10 20 30 40 50 1 3 5 10 30 50 100

Collector current IC (A) Collector-emitter voltage VCE (V)

Safe operating area Reverse bias SOA

200
300
10 ms*
1 ms* 100
100 IC max (pulsed)*
(A)

50 10 s*
(A)
IC

30 100 s*
IC max
IC

(continuous)
Collector current

30
10
Collector current

5 DC operation
3 *: Single nonrepetitive
pulse 10
Tc = 25C Tj <
= 125C
1 Curves must be derated VGE = 15 V
linearly with increase in RG = 51
0.5
temperature.
0.3 3
1 3 10 30 100 300 1000 3000 10 30 100 300 1000 3000

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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Rth (t) tw IECF VECF

1
10 100

Common collector

Emitter-collector forward current

80
0
10
Transient thermal impedance

Diode
Tc = 40C
60
Rth (t) (C/W)

IECF (A)
IGBT 25
101

40
125

102
20

Tc = 25C
103 0
105 104 103 102 101
0 1 2 0 1 2 3 4 5
10 10 10

Pulse width tw (s) Emitter-collector forward voltage VECF (V)

Irr, trr IECF Irr, trr di/dt

2.5 20 1.0 100

Common collector Common collector

(A)

(A)

di/dt = 20 A/s IECF = 30 A

(s)

(s)

2.0 16 0.8 80
Irr

Irr

Tc = 25C Tc = 25C
Peak reverse recovery current

Peak reverse recovery current

trr

trr
Reverse recovery time

Reverse recovery time

1.5 12 0.6 60
Irr trr

1.0 8 0.4 40
trr

0.5 4 0.2 20 Irr

0 0 0 0
0 20 40 60 80 100 0 40 80 120 160 200 240

Emitter-collector forward current IECF (A) di/dt (A/s)

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RESTRICTIONS ON PRODUCT USE 000707EAA

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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