Ordering number : EN2112C

2SB1201/2SD1801
Bipolar Transistor
http://onsemi.com
()50V, ()2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
Adoption of FBET, MBIT processes Large current capacitance and wide ASO

Low collector-to-emitter saturation voltage Fast switching speed

Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
Specifications ( ): 2SB1201
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC (--)2 A
Collector Current (Pulse) ICP (--)4 A
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ)
7518-003 7003-003
6.5 2.3 6.5 2.3
5.0 0.5 2SB1201S-E 5.0 0.5 2SB1201S-TL-E
1.5

1.5

4 2SB1201T-E 4 2SB1201T-TL-E
2SD1801S-E 2SD1801S-TL-E
2SD1801T-E 2SD1801T-TL-E
7.0

7.0
5.5

5.5

0.85 0.85 0.5

1.2

0.7
2.5

1.2
0.8
0.8
1.6

1 2 3
7.5

0.6 0.5 0.6 0 to 0.2

1 : Base 1 : Base
1.2
2 : Collector 2 : Collector
1 2 3
3 : Emitter 3 : Emitter
4 : Collector 4 : Collector
2.3 2.3

2.3 2.3 TP TP-FA

Product & Package Information

Package : TP Package : TP-FA
JEITA, JEDEC : SC-64, TO-251 JEITA, JEDEC : SC-63, TO-252
Minimum Packing Quantity : 500 pcs./bag Minimum Packing Quantity : 700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA) 2,4 2,4
B1201 D1801

RANK LOT No. RANK LOT No.

1 1
TL

2SB1201 3 2SD1801 3

Semiconductor Components Industries, LLC, 2013

September, 2013 60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/10
 2SB1201 / 2SD1801

Continued from preceding page.

Parameter Symbol Conditions Ratings Unit
0.8 W
Collector Dissipation PC
Tc=25C 15 W
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
hFE1 VCE=(--)2V, IC=(--)100mA 100* 560*
DC Current Gain
hFE2 VCE=(--)2V, IC=(--)1.5A 40
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA (--0.3)0.15 (--0.7)0.4 V
Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)1A, IC=(--)50mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10A, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10A, IC=0A (--)6 V
Turn-On Time ton 60 ns
Storage Time tstg See specified Test Circuit. (450)550 ns
Fall Time tf 30 ns

* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :

Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560

Switching Time Test Circuit

IB1
PW=20s
OUTPUT
D.C.b1% IB2

INPUT RB
VR
RL
25
50
+ +
100F 470F

VBE= --5V VCC=25V

IC=10IB1= --10IB2=500mA, VCC=25V

For PNP, the polarity is reversed.

Ordering Information
Device Package Shipping memo
2SB1201S-E TP 500pcs./bag
2SB1201T-E TP 500pcs./bag
2SD1801S-E TP 500pcs./bag
2SD1801T-E TP 500pcs./bag
Pb Free
2SB1201S-TL-E TP-FA 700pcs./reel
2SB1201T-TL-E TP-FA 700pcs./reel
2SD1801S-TL-E TP-FA 700pcs./reel
2SD1801T-TL-E TP-FA 700pcs./reel

No.2112-2/10
 2SB1201 / 2SD1801
IC -- VCE IC -- VCE
--2.4 2.4
2SB1201 A 2SD1801
50m
--2.0 2.0 4 0mA

A
25mA
Collector Current, IC -- A

Collector Current, IC -- A
0m
mA
--20

--5
--1.6 1.6
--10mA 15mA

--1.2 --8mA 1.2

8mA
--6mA
--0.8 --4mA 0.8 4mA

--2mA 2mA
--0.4 0.4

IB=0 IB=0
0 0
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 0 0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR09144 Collector-to-Emitter Voltage, VCE -- V ITR09145
IC -- VCE IC -- VCE
--1200 1200
2SB1201 2SD1801
--7mA 7mA
--1000 --6mA 1000 6mA
Collector Current, IC -- mA

Collector Current, IC -- mA
--5mA 5mA
--800 800
--4mA 4mA

--600 --3mA 600 3mA

--2mA 2mA
--400 400

--1mA 1mA
--200 200

IB=0 IB=0
0 0
0 --2 --4 --6 --8 --10 --12 0 2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR09146 Collector-to-Emitter Voltage, VCE -- V ITR09147
IC -- VBE IC -- VBE
--2.4 2.4
2SB1201 2SD1801
VCE= --2V VCE=2V
--2.0 2.0
Collector Current, IC -- A

Collector Current, IC -- A

--1.6 1.6

--1.2 1.2

--0.8 0.8
25C C

25 5C
75

7
C
Ta=

--0.4 0.4
Ta=
--25

C
--25

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR09148 Base-to-Emitter Voltage, VBE -- V ITR09149
hFE -- IC hFE -- IC
1000 1000
2SB1201 2SD1801
7 7
VCE= --2V VCE=2V
5 5
DC Current Gain, hFE

DC Current Gain, hFE

3 Ta=75C 25C 3
Ta=75C
2 --25C 2 25C
--25C

100 100

7 7

5 5

3 3

2 2
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A ITR09150 Collector Current, IC -- A ITR09151

No.2112-3/10
 2SB1201 / 2SD1801
f T -- IC f T -- IC
1000 1000
2SB1201 2SD1801
7 VCB=10V 7 VCB=10V

Gain-Bandwidth Product, f T -- MHz

Gain-Bandwidth Product, f T -- MHz

5 5

3 3

2 2

100 100

7 7
5 5

3 3

2 2

10 10
--10 2 3 5 7 --100 2 3 5 7 --1000 2 3 10 2 3 5 7 100 2 3 5 7 1000 2 3
Collector Current, IC -- A ITR09152 Collector Current, IC -- A ITR09153
Cob -- VCB Cob -- VCB
2 100
2SB1201 2SD1801
f=1MHz 7 f=1MHz
100
Output Capacitance, Cob -- pF

Output Capacitance, Cob -- pF

5
7

5
3

3 2

10
10

7 7

5 5
--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR09154 Collector-to-Base Voltage, VCB -- V ITR09155
VCE(sat) -- IC VCE(sat) -- IC
--1000 1000
2SB1201 2SD1801
7 7
IC / IB=20 IC / IB=20
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VCE(sat) -- mV

5 5

3 3

2 2
Collector-to-Emitter

Collector-to-Emitter

--100 100

7 7
C
5 25 5
C
C 25
75
3 Ta= 3 C
Ta=75
C
2 --25 2 C
--25
--10 10
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A ITR09156 Collector Current, IC -- A ITR09157
VBE(sat) -- IC VBE(sat) -- IC
--10 10
2SB1201 2SD1801
7 IC / IB=20 7 IC / IB=20
Saturation Voltage, VBE(sat) -- V

Saturation Voltage, VBE(sat) -- V

5 5

3 3

2 2
Base-to-Emitter

Base-to-Emitter

--1.0 25C 1.0 25C

Ta= --25C Ta= --25C
7 7
75C 75C
5 5

3 3
5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A ITR09158 Collector Current, IC -- A ITR09159

No.2112-4/10
 2SB1201 / 2SD1801
ASO PC -- Ta
5 16
1m 2SB1201 / 2SD1801
s 15
3
14
2

Collector Dissipation, PC -- W
10m
Collector Current, IC -- A

12

DC
1.0

s
7 Id
ea

op
5 lh

era
10

10 0
DC ea

tio
3 op td

ms
era iss

nT
2 tio 8 ip

c=
nT at
io

25
a= n
25

C
0.1 6
C
7
5 4
2SB1201 / 2SD1801
3 Tc=25C
2 Single pulse 2
No heat sink
For PNP, the minus sign is omitted. 0.8
0.01 0
2 3 5 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V ITR09160 Ambient Temperature, Ta -- C ITR09161

No.2112-5/10
 2SB1201 / 2SD1801

Taping Specification
2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E

No.2112-6/10
 2SB1201 / 2SD1801

Outline Drawing Land Pattern Example

2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E
Mass (g) Unit
Unit: mm
0.282 mm
* For reference

7.0

7.0
1.5

2.0
2.5
2.3 2.3

No.2112-7/10
 2SB1201 / 2SD1801

Bag Packing Specification

2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E

No.2112-8/10
 2SB1201 / 2SD1801

Outline Drawing
2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E
Mass (g) Unit
0.315 mm
* For reference

No.2112-9/10
 2SB1201 / 2SD1801

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PS No.2112-10/10