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2SA1512
Silicon PNP epitaxial planer type
3.00.2
Features
Low collector to emitter saturation voltage VCE(sat).
Optimum for low-voltage operation and for converters.
15.60.5
Allowing supply with the radial taping.
Optimum for high-density mounting.
+0.2
0.450.1
marking
0.70.1
2.00.2
Parameter Symbol Ratings Unit 1 2 3
Rank Q R
hFE1 90 ~ 155 130 ~ 220
1
Transistor 2SA1512
PC Ta IC VCE VCE(sat) IC
500 1.2 100
450 IB=10A
30
1.0
400 9A
200 3A
0.3
0.4 Ta=75C
150 2A
0.1 25C
100
0.2 1A 25C
50 0.03
0 0 0.01
0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 3 10
Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A)
VBE(sat) IC hFE IC fT IE
100 600 320
IC/IB=10 VCB=10V
Base to emitter saturation voltage VBE(sat) (V)
VCE=2V
Ta=25C
280
Forward current transfer ratio hFE
30
10 240
400
3 200
Ta=25C
1 25C 300 Ta=75C 160
75C 25C
0.3 120
200
25C
0.1 80
100
0.03 40
0.01 0 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)
Cob VCB
80
Collector output capacitance Cob (pF)
IE=0
70 f=1MHz
Ta=25C
60
50
40
30
20
10
0
1 3 10 30 100
Collector to base voltage VCB (V)