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SOIC-8 D1 D2
S2 1 8 D2
G2 2 D2
7
S1 3 6 D1
G1 4 5 D1 G1 G2
S1 S2
Pin1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 48 62.5 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 74 90 C/W
Maximum Junction-to-Lead Steady-State RJL 32 40 C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40 15
10V 3V
35 VDS=5V
4.5V
12
30
25 2.5V 9
ID (A)
ID(A)
20
15 6
10
VGS=2V 3 125C 25C
5
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
30 1.8
1.4
17
20
5
1.2 VGS=10V
ID=6.9A
2
15
10
VGS=10V
1
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
50 1.0E+01
ID=6.9A
1.0E+00
40 40
1.0E-01
)
RDS(ON) (m
125C 125C
IS (A)
25C
30 1.0E-02
1.0E-03
20
1.0E-04
25C
10 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
5 1000
VDS=15V
ID=6.9A
4 800
Ciss
Capacitance (pF)
VGS (Volts)
3 600
2 400
Coss
1 200
Crss
0 0
0 2 4 6 8 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0 100.0
TA=25C
IAR (A) Peak Avalanche Current
RDS(ON) 10s
TA=100C 10.0
limited
TA=150C
ID (Amps)
100s
10.0 1.0 1ms
10ms
TA=125C 0.1 DC
TJ(Max)=150C 10s
TA=25C
0.0
1.0 0.01 0.1 1 10 100
1 10 100 1000
s)
Time in avalanche, tA (
VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Z JA Normalized Transient
1 RJA=90C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DUT -
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
t on toff
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds