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ADVANTAGES DISADVANTAGES
Can switch both halves of an A TRIAC does not fire symmetrically on both
AC waveform sides of the waveform
Single component can be used Switching gives rise to high level of
for full AC switching harmonics due to non-symmetrical switching
More susceptible to EMI problems as a result
ADVANTAGES DISADVANTAGES
Despite what may seem like a number of disadvantages, it is still the best option for many
circumstances. However when using a TRIAC, it is necessary to be aware of its limitations so
that these can be satisfactorily addressed and overcome should they affect the operation of the
overall circuit in any significant way.
Applications
TRIACs are used in a number of applications. However they tend not to be used in high
power switching applications - one of the reasons for this is the non-symmetrical switching
characteristics. For high power applications this creates a number of difficulties, especially with
electromagnetic interference.
However TRIACs are still used for many electrical switching applications:
a. Domestic light dimmers
b. Electric fan speed controls
c. Small motor controls
d. Control of small AC powered domestic appliances
The TRIAC is easy to use and provides cost advantages over the use of two thyristors for
many low power applications. Where higher powers are needed, two thyristors placed in "anti-
parallel" are almost always used.
The TRIAC is an electronic component that is widely used in many circuit applications,
ranging from light dimmers through to various forms of AC control. It is generally only used for
lower power applications, thyristors generally being used for the high power switching circuits.
4. UNIJUNCTION TRANSISTOR (UJT)
Unijunction transistors have three terminals called the emitter, base 1, and base 2. The
emitter material is p-type semiconductor and the base material is n-type. In complementary UJTs,
base material is p-type and emitter n-type.
A signal applied to the UJT emitter terminal controls resistance between the base
terminals. With no emitter signal, resistance between base 1 and base 2 is high and very little
current flows. As the emitter voltage increases, the resistance between the base terminals remains
high until emitter voltage reaches a point called the peak voltage Vp. At this point, resistance
between the base terminals starts to decrease as current flowing into the emitter terminal
increases. Emitter voltage decreases as emitter current increases until a voltage valley point Vv.
After the valley point, increasing emitter currents cause an increase in emitter voltage.
Unijunction transistors can be used as negative resistors when operated
between Vp and Vv. This characteristic and a low firing current make them useful in oscillator
and timing circuits, and in triggering SCRs.
5. GATE TURN-OFF SWITCH
A gate turn-off switch, also known as a gate-controlled switch (GCS) or gate turn-off
thyristor (GTO), is similar to an SCR but can be turned off by a negative signal on the gate
terminal. GTOs generally handle much lower currents than SCRs.
GTOs have many characteristics of SCRs and transistors, and in some ways are superior
to both for power-switching applications. GTOs switch dc current without the auxiliary
components that SCRs require, resulting in reduced cost and lower electrical and electromagnetic
noise. Also, GTOs latch on or off with a single pulse.
Despite their advantages, GTOs are not as widely used as once seemed possible. Their
low use is probably because peak current that could be reliably turned off in early GTOs is
limited to relatively low values. The limit is imposed by current filaments that produce localized
hot spots during turn-off.
Newer GTOs, however, turn off much higher current than previous models. Higher peak-
controllable ratings are obtained with new shorted-anode structures, precise doping, and finely
interdigitated geometry. The new GTOs, moreover, switch faster than previous versions, exhibit
higher ratios of peak-to-average current, and greater on-state gain. Also, peak voltage ratings are
higher than those for bipolar and Darlingtons.
GTOs generally cannot be turned off successfully when conducting current in the range
between the maximum turn-off rating and the maximum surge rating. However, properly selected
fuses may protect new devices from damage due to current in this range.
GTOs are similar to SCRs in that both are four-layer devices. However, the average
current rating of GTOs, due to an interdigitated construction, is appreciably lower than that for
SCRs of corresponding size.
Average current ratings for GTOs generally are quite close to those for Darlingtons of
identical dimensions because similar inter digitation techniques are used for both. But GTOs
generally are capable of turning off higher current because Darlingtons go out of saturation at
high levels of current
6. STATIC INDUCTION THYRISTOR(SITH)
A Static Induction Thyristor or SI-thyristor is a self-controlled GTO-like on-off device
commercially introduced in Japan in 1988. Similar device, known as field-controlled thyristors
(FCT) or field-controlled diode (FCD), were developed in USA. The device symbol is shown in
Fig. 11.10.
It is essentially a 13+ NN+ diode. Similar to SIT, SITH is a normally on device with the N-
region saturated with minority carrier. The turn-off behavior of SITH is similar to that of GTO. It
is a self-controlled GTO-like high power device (1200 V, 800A). Its general comparison with
GTO is given below.
Unlike GTO, SITH is a normally on device-asymmetric blocking.
a. The conduction drop is higher (4.0 V)
b. The turn-off current gain is lower (1 to 3)
c. The switching frequency is higher (tON = 2 s,tOFF = 9 s) and has lower switching losses.
d. The dv/dt and di/dt ratings are higher. (2 kV/s, 900A/s.
e. The SOA is improved and Tj is limited.
7. MOS CONTROLLED THYRISTOR (MCT)
Out of many semiconductor controlled devices, MCT is considered to be the latest. The
device is basically a thyristor with two MOSFETs built into the gate structure. A MOSFET is
used for turning ON the MCT and another one is used for turning it OFF. The device is mostly
used for switching applications and has other characteristics like high frequency, high power, and
low conduction drop and so on. An MCT combines the feature of both conventional four
layer thyristor having regenerative action and MOS- gate structure. In this device, all the gate
signals are applied with respect to anode, which is kept as the reference. In a normally used SCR,
cathode is kept as the reference terminal for gate signals.
The basic structure of an MCT cell is shown in the figure below.
MOS Controlled Thyristor (MCT) Structure
In practice, a MCT will include thousands of these basic cells connected in parallel, just
like a PMOSFET. This helps in obtaining a high current carrying capacity for the device.
The equivalent circuit of the MCT is shown in the figure below.