BC327/328

BC327/328

Switching and Amplifier Applications

Suitable for AF-Driver stages and low power output stages
Complement to BC337/BC338

1 TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC327 -50 V
: BC328 -30 V
VCEO Collector-Emitter Voltage
: BC327 -45 V
: BC328 -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -800 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
: BC327 -45 V
: BC328 -25 V
BVCES Collector-Emitter Breakdown Voltage IC= -0.1mA, VBE=0
: BC327 -50 V
: BC328 -30 V
BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V
ICES Collector Cut-off Current
: BC327 VCE= -45V, VBE=0 -2 -100 nA
: BC328 VCE= -25V, VBE=0 -2 -100 nA
hFE1 DC Current Gain VCE= -1V, IC= -100mA 100 630
hFE2 VCE= -1V, IC= -300mA 40
VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF

hFE Classification
Classification 16 25 40
hFE1 100 ~ 250 160 ~ 400 250 ~ 630
hFE2 60- 100- 170-

2002 Fairchild Semiconductor Corporation Rev. B1, August 2002

 BC327/328
Typical Characteristics

-500 -20
A
- 80
IB= A
- 70
mA I =
IC[mA], COLLECTOR CURRENT

- 5.0 A

IC[mA], COLLECTOR CURRENT

I B = - 4.5m
B
A P
-400 -16 - 60 T =6
I B = 4.0mA IB= 00
mW
- A
I B = - 3.5m A A
I B = - 3.0m A - 50
I B = - 2.5m IB=
-300 IB = mA -12 A
- 2.0 - 40
IB =
mA
IB=
1.5
IB = -
30A
-200 -8
IB = -
IB = - 1.0mA PT = 60
0mW
0A
IB = - 2
IB = - 0.5mA
-100
-4

IB = - 10A
IB = 0
-0 IB = 0
-1 -2 -3 -4 -5
-10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Static Characteristic

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 -10
PULSE
IC = 10 IB
PULSE
V CE = - 2.0V
hFE, DC CURRENT GAIN

V CE(sat)
100 -1

- 1.0V

10 -0.1

V BE(sat)

1 -0.01
-0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-1000 1000

VCE = -5.0V
fT[MHz], GAIN-BANDWIDTH PRODUCT

VCE = -1V
IC[mA], COLLECTOR CURRENT

PULSE
-100

-10 100

-1

-0.1 10
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -10 -100

VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation Rev. B1, August 2002

 BC327/328
Package Dimensions

TO-92
+0.25
4.58 0.15

4.58 0.20

0.46 0.10
14.47 0.40

+0.10
1.27TYP 1.27TYP 0.38 0.05
[1.27 0.20] [1.27 0.20]

3.60 0.20
3.86MAX

(0.25)
+0.10
0.38 0.05
1.02 0.10

(R2.29)

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation Rev. B1, August 2002

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Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
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supplementary data will be published at a later date.
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2002 Fairchild Semiconductor Corporation Rev. I1