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MMBT2222A / PZT2222A NPN General-Purpose Amplifier

July 2014

MMBT2222A / PZT2222A
NPN General-Purpose Amplifier

Features
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.
Sourced from process 19.

C
C

E
E
C
SOT-23 B SOT-223 B
Mark:1P

Figure 1. MMBT2222A Device Package Figure 2. PZT2222A Device Package

Ordering Information
Part Number Top Mark Package Packing Method
MMBT2222A 1P SOT-23 3L Tape and Reel
PZT2222A 2222A SOT-223 4L Tape and Reel

Absolute Maximum Ratings(1), (2)


Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted.

Symbol Parameter Value Unit


VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current 1.0 A
TSTG Operating and Storage Junction Temperature Range -55 to 150 C

Note:
1. These rating are based on a maximum junction temperature of 150 C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Thermal Characteristics
Values are at TA = 25C unless otherwise noted.

Max.
Symbol Parameter Unit
MMBT2222A(3) PZT2222A(4)
Total Device Dissipation 350 1000 mW
PD
Derate Above 25C 2.8 8.0 mW/C
RJA Thermal Resistance, Junction to Ambient 357 125 C/W

Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 2
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Electrical Characteristics
Values are at TA = 25C unless otherwise noted.

Symbol Parameter Conditions Min. Max. Unit


Off Characteristics
Collector-Emitter Breakdown
BV(BR)CEO IC = 10 mA, IB = 0 40 V
Voltage(5)
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 V
ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 10 nA
VCB = 60 V, IE = 0 0.01
ICBO Collector Cut-Off Current A
VCB = 60 V, IE = 0, TA = 125C 10
IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
IBL Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA
On Characteristics
IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 10 mA, VCE = 10 V,
hFE DC Current Gain 35
TA = -55C
IC = 150 mA, VCE = 10 V(5) 100 300
IC = 150 mA, VCE = 1 V(5) 50
IC = 500 mA, VCE = 10 V(5) 40
IC = 150 mA, IB = 15 mA 0.3
VCE(sat) Collector-Emitter Saturation Voltage(5) V
IC = 500 mA, IB = 50 mA 1.0
IC = 150 mA, IB = 15 mA 0.6 1.2
VBE(sat) Base-Emitter Saturation Voltage(5) V
IC = 500 mA, IB = 50 mA 2.0
Small Signal Characteristics
IC = 20 mA, VCE = 20 V,
fT Current Gain Bandwidth Product 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF
IC = 20 mA, VCB = 20 V,
rbCc Collector Base Time Constant 150 pS
f = 31.8 MHz
IC = 100 A, VCE = 10 V,
NF Noise Figure 4.0 dB
RS = 1.0 k, f = 1.0 kHz
Real Part of Common-Emitter IC = 20 mA, VCE = 20 V,
Re(hie) 60
High Frequency Input Impedance f = 300 MHz
Switching Characteristics
td Delay Time VCC = 30 V, VEB(off) = 0.5 V, 10 ns
tr Rise Time IC = 150 mA, IB1 = 15 mA 25 ns
ts Storage Time VCC = 30 V, IC = 150 mA, 225 ns
tf Fall Time IB1 = IB2 = 15 mA 60 ns

Note:
5. Pulse test: pulse width 300 s, duty cycle 2.0%.

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 3
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Typical Performance Characteristics

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)


h FE - TYPICAL PULSED CURRENT GAIN

500 0.4
V CE = 5V
E = 10
400
0.3
125 C
300
125qC

0.2
200
25 C 25 qC

100 0.1
- 40 C
- 40qC

0
0.1 0.3 1 3 10 30 100 300 1 10 100 500
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Figure 3. Typical Pulsed Current Gain Figure 4. Collector-Emitter Saturation Voltage


vs. Collector Current vs. Collector Current

V BE(ON) - BASE-EMITTER ON VOLTAGE (V)


V BESAT- BASE-EMITTER VOLTAGE (V)

1
E = 10 VCE = 5V
1
0.8 - 40 C
- 40 qC

0.8 25qC
25 C

0.6
125 qC
125 C
0.6
0.4

0.4
0.2
1 10 100 500 0.1 1 10 25
I ICC - COLLECTOR CURRENT (m A) I ICC - COLLECTOR CURRENT (mA)

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage


vs. Collector Current vs. Collector Current

500
I CBO - COLLECTOR CURRENT (nA)

V = 40V 20 f = 1 MHz
100 CB
CAPACITANCE (pF)

16
10

12
1 C te

8
0.1
C ob
4

25 50 75 100 125 150 0.1 1 10 100


T A - AMBIENT TEMPERATURE (C) REVERSE BIAS VOLTAGE (V)

Figure 7. Collector Cut-Off Current Figure 8. Emitter Transition and Output Capacitance
vs. Ambient Temperature vs. Reverse Bias Voltage

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 4
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Typical Performance Characteristics (Continued)

400 400
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
320 320
V cc = 25 V V cc = 25 V

TIME (nS)
TIME (nS)

240 240

160 ts
160
tr
t off
80 80 tf
t on
td

0 0
10 100 1000 10 100 1000
I CIC - COLLECTOR CURRENT (mA) I CIC - COLLECTOR CURRENT (mA)

Figure 9. Turn-On and Turn-Off Times Figure 10. Switching Times vs. Collector Current
vs. Collector Current

CHAR. RELATIVE TO VALUES AT I C= 10mA


1 8
V CE = 10 V
PD - POWER DISSIPATION (W)

T A = 25oC
SOT-223
0.75 TO-92
6

h oe

0.5 4
SOT-23
h re
0.25 2
h fe

h ie
0 0
0 25 50 75 100 125 150 0 10 20 30 40 50 60
o
TEMPERATURE ( C) I C - COLLECTOR CURRENT (mA)

Figure 11. Power Dissipation vs. Figure 12. Common Emitter Characteristics
Ambient Temperature
CHAR. RELATIVE TO VALUES AT VCE= 10V
CHAR. RELATIVE TO VALUES AT TA = 25oC

2.4 1.3
V CE = 10 V I C = 10 mA
I C = 10 mA 1.25 T A = 25oC h fe
h re
2 h ie 1.2
h fe 1.15
1.6 h ie
1.1
h oe 1.05
1.2
1
0.8 0.95 h re
0.9
0.4 0.85
h oe
0.8
0 0.75
0 20 40 60 80 100 0 5 10 15 20 25 30 35
T A - AMBIENT TEMPERATURE ( o C) VCE - COLLECTOR VOLTAGE (V)

Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 5
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Physical Dimensions

2.920.20 0.95

3
1.40

1.30+0.20
-0.15 2.20

1 2
(0.29) 0.60
0.95 0.37
0.20 A B 1.00
1.90 1.90
LAND PATTERN
RECOMMENDATION

1.20 MAX SEE DETAIL A

(0.93) 0.10
0.00
0.10 C
C 2.400.30

NOTES: UNLESS OTHERWISE SPECIFIED


GAGE PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.
0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,
0.25 MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10
(0.55) PLANE

SCALE: 2X

Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 6
MMBT2222A / PZT2222A NPN General-Purpose Amplifier
Physical Dimensions (Continued)

Figure 16. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)


Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.

For current tape and reel specifications, visit Fairchild Semiconductors online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.

2004 Fairchild Semiconductor Corporation www.fairchildsemi.com


MMBT2222A / PZT2222A Rev. 1.1.0 7
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intended to be an exhaustive list of all such trademarks.

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EfficientMax MegaBuck SignalWise TRUECURRENT*
ESBC MICROCOUPLER SmartMax PSerDes
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MicroPak Solutions for Your Success
Fairchild SPM
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FACT Quiet Series
MotionMax SuperFET
FACT UniFET
mWSaver SuperSOT-3
FAST VCX
OptoHiT SuperSOT-6
FastvCore VisualMax
OPTOLOGIC SuperSOT-8
VoltagePlus
FETBench OPTOPLANAR SupreMOS
FPS XS
SyncFET
Sync-Lock
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I68

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