Solar Cells Assignment 2

Question 1

AM0 and AM 1.5 spectrum data are given in the excel sheet.

a) Plot the solar irradiance (both AM0 and AM 1.5) in Wm-2nm-1 and calculate the total
power density in Wm-2. [Use matlab or excel or any other plotting tool] (4M)

b) Find out power density in Wm-2 from UV and visible light on earth and in a spacecraft.
(2M)

c) Answer the following questions qualitatively (2M)

What happens to the solar spectrum,

i) when we move from equator to polar regions?

ii) when the temperature of the sun is reduced to half of its original value?

Question 2

Refer to Shockley-Queisser Paper on Limits of Efficiency in Solar cell

Consider the following expressions for Qs and Ps.

a) Explain what is Qs. How the above expression for Qs is obtained. Also explain reason
for limits of integration. (2M)

b) Explain what is Ps. How the above expression for Ps is obtained. Also explain reason
for limits of integration. (2M)

c) Explain how the ultimate efficiency is arrived at after the expressions for Qs and Ps are
obtained. (1 M)

d) Refer Fig-3 of the paper. What changes will occur in the plot if Sun's temperature is
raised to 7500K. Which semiconductor material will be suitable in this case? [In the
paper sun's temperature is assumed to be 6000K]. (2 M)

Question 3
For a particular sample of semiconductor, the radiative recombination lifetime for
minority carriers is calculated as 100 s, the Auger recombination lifetimes as 50 s, and
the lifetime for trapping processes as 10 . Assuming no other recombination process,
what is the net lifetime of minority carriers in this material? (2M)

Question 4

A 10 m thick sample of Si at 300K has an area 1cm2. The sample is uniformly illuminated
with monochromatic light of photon having energy 1.8 eV. The absorption coefficient at
this wavelength is 103 cm-1. The power incident on the sample is 12 mW. (5M)

(a) Calculate the power absorbed by the sample.

(b) Determine how much power is dissipated by the excess electrons to the lattice
before recombining.

(c) Determine the number of photons per sec falling on the sample.

(d) Assume the sample as n-type with n0 = 1016 cm-3 and value of = 10-6 sec.

I. Assuming that each of the absorbed photon produces one electron-hole pair
in the sample, calculate the excess electron and hole concentrations in the
steady state.
II. Calculate the photoconductivity of the sample and determine whether it is
the case of low or high level injection.

Question 5

Figure-1 shows the energy band diagram of a Silicon semiconductor bar.

(a) Is the semiconductor in equilibrium? Is any light falling on it? (1M)

(b) What is the type of semiconductor (n-type/p-type)? (1M)
(c) Does low-level injection approximation hold? (1M)
(d) Calculate the carrier concentrations (nn and pn) and equilibrium carrier
concentration (n0 and p0)? (Assume T=300K, ni=1.5x1010cm-3, Nc=2.8x1019cm-3
and Nv=1019cm-3) (3M)
(e) Now let a metal contact is made on one side of the semiconductor bar. Draw the
energy band diagram by properly showing the variations of quasi Fermi levels.
Also draw the excess carrier profile as a function of distance. (Hint: For metals,
surface recombination velocity is infinity) (2M)
0.12
Ec
eV Efn

0.22 Ei
eV Efp

Ev

Figure 1