CHARACTERISTICS OF JUNCTION FIELD EFFECT

TRANSISTOR AND METAL OXIDE SEMICONDUTER FET

Jitendra kumar gurjar
M.Sc Physics
Roll No-16510034
jitendra.gurjar@iitgn.ac.in

21 march 2017

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Physics Lab Report IIT GANDHINAGAR

Contents
1 ABSTRACT 3

2 COMPONENTS 3

3 INTRODUCTION 3

4 CIRCUIT ANALYSIS 3

5 THEORY AND EXPERIMENTAL DATA 5

5.1 FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5.1.1 DRAIN CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1.2 conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5.1.3 TRANSFER CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . 7
5.1.4 conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2.1 DRAIN CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2.2 conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2.3 TRANSFER CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.4 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

6 CALCULATION 11
6.1 jfet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

7 Reference 11

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1 ABSTRACT
To Plot the characteristics of field effect transistor and a metal oxcide semiconductor field effect
transistor.

2 COMPONENTS
Mosfet and fet box, banana wire, crocodile wires.

3 INTRODUCTION
FET is a voltage operated device. It has got 3 terminals. They are Source, Drain and Gate. When
the gate is biased negative with respect to the source, the pn junctions are reverse biased and deple-
tion regions are formed. The channel is more lightly doped than the p type gate, so the depletion
regions penetrate deeply in to the channel. The result is that the channel is narrowed, its resistance
is increased, and ID is reduced. When the negative bias voltage is further increased, the depletion
regions meet at the center and ID is cutoff completely. MOSFETS are three terminal device having
a source, a gate and a drain. MOSFET is the abbreviation for metal oxide semiconductor field
effect transistor. It uses a thin layer of silicon dioxide or an insulator between gate and channel.
MOSFETs are of two types. 1) Enhancement type MOSFET or E-MOSFET and 2) Depletion en-
hancement MOSFET or DE- MOSFET. E-MOSFET has become enormously important in digital
electronics and computers. In the absence of EMOSFETs, the personal computers (PCs) that are
now so wide spread would not exist. It uses a thin layer of silicon dioxide or an insulator between
gate and channel.

4 CIRCUIT ANALYSIS
MOSFET-in this circuit arrangement an Enhancement-mode N-channel MOSEFT is being used
to switch a simple lamp on and off .The gate input voltage Vg s is taken to an approprite positive
voltage level to turn on the device and therefore the lamp is either fully on (vgs =+ve) or at a zero
voltage level that turns the device fully off (vgs =0)

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FET as a phase shift oscillator-the circut consists of a common source FET amplifire followed
by a three section R-C phase shift network. the three section R-C phase shift network produces an
additinol phase shift which is a function of frequency and equal 180 degree at some frequency of
operation . At this frequency the total phase shift from the gate will be exactly zero. The circuit
will oscillate at this paticular frequency only.

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Physics Lab Report IIT GANDHINAGAR

5 THEORY AND EXPERIMENTAL DATA

5.1 FET
JFET operation can be compared to that of a garden hose. The flow of water through a hose can be
controlled by squeezing it to reduce the cross section and the flow of electric charge through a JFET
is controlled by constricting the current-carrying channel. The current also depends on the electric
field between source and drain (analogous to the difference in pressure on either end of the hose).
Constriction of the conducting channel is accomplished using the field effect: a voltage between
the gate and the source is applied to reverse bias the gate-source pn-junction, thereby widening
the depletion layer of this junction (see top figure), encroaching upon the conducting channel and
restricting its cross-sectional area. The depletion layer is so-called because it is depleted of mobile
carriers and so is electrically non-conducting for practical purposes.[1] When the depletion layer
spans the width of the conduction channel, pinch-off is achieved and drain-to-source conduction
stops. Pinch-off occurs at a particular reverse bias (VGS) of the gate-source junction. The pinch-
off voltage (Vp) varies considerably, even among devices of the same channel. To switch off an
n-channel device requires a negative gate-source voltage (VGS). Conversely, to switch off a p-
channel device requires positive VGS. In normal operation, the electric field developed by the gate
blocks source-drain conduction to some extent. Some JFET devices are symmetrical with respect
to the source and drain.

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5.1.1 DRAIN CHARACTERISTICS

Obs. VGS =0V VGS =-0.92V VGS =-1.9V
No. VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
1 0.5 12.7 0.6 9.6 1.13 2.2
2 1.03 23.1 1.02 13.7 2.05 2.5
3 2.12 34.1 1.63 16.7 3.00 3.9
4 3.14 37.1 2.19 18.9 3.89 4.1
5 4.83 37.3 3.6 19.6 4.5 4.1
6 5.44 36.7 4.7 20.2 5.49 4.3
7 6.7 36.9 5.86 20.5 6.33 4.5
8 7.38 36.7 6.99 20.7 7.39 4.7
9 8.06 36.5 7.86 20.7 8.39 4.7
10 11.05 21.1 10.03 5.0

5.1.2 conclusion
In the JFET output characteristics shown in fig, the Drain current ID shows very little change, and
the curves are very nearly horizontal at voltages greater than the pinch off voltage. Almost all of
the expected increase in current, due to the increase in voltage between Source and Drain (VDS),
is offset by the narrowing of the conducting channel due to the growing depletion layers.

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5.1.3 TRANSFER CHARACTERISTICS

Obs. VDS =3V VDS =4V VDS =5V
No. VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)
1 -0.00 37.0 -0.00 37.1 -0.00 38.1
2 -0.5 26.9 -0.49 26.5 -0.5 27.0
3 -1.02 17.1 -1.01 17.2 -1.00 17.8
4 -1.5 9.4 -1.5 9.5 -1.5 9.8
5 -2.0 3.2 -1.99 3.4 -2.0 3.5
6 -2.5 0.1 -2.5 0.2 -2.5 0.2

5.1.4 conclusion
The transfer characteristic for a JFET, which shows the change in Drain current (ID) for a given
change in GateSource voltage (VGS), is shown in Fig . Because the JFET input (the Gate) is voltage
operated, the gain of the transistor cannot be called current gain, as with bipolar transistors. The
drain current is controlled by the GateSource voltage, so the graph shows milliamperes per volt
(mA / V), and as I / V is CONDUCTANCE (the inverse of resistance V / I) the slope of this graph
(the gain of the device) is called the FORWARD or MUTUAL TRANSCONDUCTANCE, which
has the symbol gm. Therefore the higher the value of gm the greater the amplification.

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5.2 MOSFET
The traditional metaloxidesemiconductor (MOS) structure is obtained by growing a layer of silicon
dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon
(the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equiva-
lent to a planar capacitor, with one of the electrodes replaced by a semiconductor. When a voltage
is applied across a MOS structure, it modifies the distribution of charges in the semiconductor.
If we consider a p-type semiconductor . If vgs is high enough, a high concentration of negative
charge carriers forms in an inversion layer located in a thin layer next to the interface between
the semiconductor and the insulator. Unlike the MOSFET, where the inversion layer electrons
are supplied rapidly from the source/drain electrodes, in the MOS capacitor they are produced
much more slowly by thermal generation through carrier generation and recombination centers in
the depletion region. Conventionally, the gate voltage at which the volume density of electrons in
the inversion layer is the same as the volume density of holes in the body is called the threshold
voltage. When the voltage between transistor gate and source (VGS) exceeds the threshold voltage
(Vth), it is known as overdrive voltage. This structure with p-type body is the basis of the n-type
MOSFET, which requires the addition of n-type source and drain regions.

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Physics Lab Report IIT GANDHINAGAR

5.2.1 DRAIN CHARACTERISTICS

Obs. VGS =4V VGS =5V VGS =6V
No. VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
1 0.20 1.1 0.21 1.1 0.21 1.1
2 0.54 2.8 0.51 2.7 0.54 2.8
3 0.70 3.7 0.97 5.1 1.13 6.0
4 1.02 5.1 1.34 7.2 1.98 10.5
5 1.60 5.3 1.99 10.6 2.69 14.3
6 2.1 5.3 3.17 14.8 3.32 17.6
7 4.5 5.4 4.85 14.9 4.16 22.1
8 12.5 5.4 8.02 15.0 4.84 24.9
9 19.0 5.6 12.6 15.1 9.30 25.1
10 14.53 25.4
11 31.5 25.9

5.2.2 conclusion
Drain characteristics of an N-channel E-MOSFET are shown in figure. The lowest curve is the
VGST curve. When VGS is lesser than VGST, ID is approximately zero. When VGS is greater
than VGST, the device turns- on and the drain current ID is controlled by the gate voltage. The
characteristic curves have almost vertical and almost horizontal parts. The almost vertical compo-
nents of the curves correspond to the ohmic region, and the horizontal components correspond to
the constant current region.

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Physics Lab Report IIT GANDHINAGAR

5.2.3 TRANSFER CHARACTERISTICS

Obs. VDS =10V VDS =20V VDS =28V
No. VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)
1 1.00 0 2.3 0 3.0 0.1
2 2.00 0 2.6 0.002 3.2 0.5
3 2.65 0.001 3.0 0.04 3.3 1.1
4 3.08 0.093 3.5 1.407 3.5 2.1
5 3.52 1.565 4.0 5.3 4.0 6.0
6 4.02 5.7 4.5 10.3 4.5 10.6
7 4.51 10.4 5.0 15.6 5.0 15.6
8 5.07 16.1 6.0 25.5 6.0 25.4
9 5.54 20.9 7.0 35.9 7.0 36.0
10 6.06 26.3
11 7.46 36.2

5.2.4 Conclusion
Figure shows a typical transconductance curve. The current IDSS at VGS =0 is very small, being
of the order of a few nano-amperes. When the VGS is made positive, the drain current ID increases
slowly at first, and then much more rapidly with an increase in VGS.

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6 CALCULATION
6.1 jfet
VDS
Drain resistence , RD =
ID
ID
T ransconductance , gm =
VGS
Amplif ication f actor , = RD gm
(RD )VGS =0V = 117.27 , (RD )VGS =0.92V = 203.3 , (RD )VGS =1.91V = 678.5
(gm )VDS =3V = 0.0181 , VDS = 4V = 0.0151 , VDS = 6V = 0.0161
() = 5.42
pinchof f voltage = 3.00 volt
Idss = 37.4, volt

7 Reference
1.wikipidia
2.lab manual
l 3.http : //www.electronics tutorials.ws/transistor/tran5 .html
4.https : //www.elprocus.com

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