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PDIP-8 D2 D1
K2
S2/A 1 8 D2/K
N-ch G2 G1
G2 2 7 D2/K
S1 3 6 D1
4 5 P-ch A2
G1 D1
S2 S1
n-channel p-channel
Absolute Maximum Ratings T A=25C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain TA=25C 7.7 -6.2
A
Current TA=70C ID 6.1 -4.9 A
Pulsed Drain Current B IDM 30 -30
TA=25C 2.3 2.3
PD W
Power Dissipation TA=70C 1.45 1.45
B
Avalanche Current IAR 10 15 A
B
Repetitive avalanche energy 0.3mH EAR 15 33 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 20
10V 5V 4.5V
25 VDS=5V
16
4V
20
12
ID (A)
ID(A)
15
3.5V 8
10 125C
4
5 VGS=3V
25C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
40 1.6
VGS=4.5V 1.5
Normalized On-Resistance
35 VGS=10V
1.4 ID=7.7A
30
1.3
RDS(ON) (m)
25 1.2 VGS=4.5V
ID=4A
1.1
20
1
15 VGS=10V 0.9
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (Amps) Temperature ( C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature
70 1.0E+01
ID=7.7A
60 125C
1.0E+00
50
IS Amps
RDS(ON) (m)
125C
1.0E-01 25C
40
30
1.0E-02
20 25C
1.0E-03
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts)
Figure 6: Body diode characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
10 1000
900 f=1MHz
VDS=15V
VGS=0V
8 ID=7.7A 800
Ciss
Capacitance (pF)
700
600
VGS (Volts)
6
500
4 400
Coss
300
2 200
100
Crss
0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics
100 20
TJ(Max)=150C
RDS(ON) TJ(Max)=150C
TA=25C
limited TA=25C
100s 15
10 1ms 10s
ID (Amps)
Power W
10ms
10
0.1s
1
1s
5
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient
RJA=55C/W
Thermal Resistance
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
A: The value of R JA
JA
is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25C. The value in
any given application depends on
value in any a given application the user's
depends specific
on the user'sboard design.
specific The
board current
design. Therating is based
current ratingon the t 10s
is based thermal
on the t 10sresistance rating. rating.
thermal resistance
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA
JA
is the sum of the thermal impedence from junction to lead RJL JL
and lead to ambient. RJL and RJC are equivalent terms referring to
thermal
D. resistance
The static from junction
characteristics to drain
in Figures lead.
1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max.
D. These
E. The static
testscharacteristics
are performedinwith
Figures 1 to 6,12,14
the device mountedare on
obtained using
1 in2 FR-4 80swith
board pulses,
2oz.duty cyclein0.5%
Copper, a stillmax.
air environment with TA=25C. The SOA
E. These
curve tests are
provides performed
a single with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
pulse rating.
provides a single pulse rating.
F. Rev 3: Jul 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 25
-10V
-4.5V VDS=-5V
25 -6V 20
-4V
-5V
20
15
-ID (A)
-ID(A)
15 -3.5V
10
10
VGS=-3V 125C
5
5
-2.5V 25C
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
90 1.60
80 VGS=-10V
Normalized On-Resistance
1.40 ID=-6.2A
70
VGS=-4.5V VGS=-4.5V
RDS(ON) (m)
60 ID=-4A
1.20
50
40 1.00
VGS=-10V
30
0.80
20
0 5 10 15 20 25 0 25 50 75 100 125 150 175
100 1.0E+01
90 ID=-6.2A
1.0E+00
80
1.0E-01
70
125C
RDS(ON) (m)
60 1.0E-02
-IS (A)
125C
50 1.0E-03
40
1.0E-04
30 25C 25C
1.0E-05
20
10 1.0E-06
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 1500
VDS=-15V
ID=-6.2A 1250
8
Ciss
Capacitance (pF)
1000
-VGS (Volts)
6
750
4
500 Coss
Crss
2
250
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150C, TA=25C TJ(Max)=150C
TA=25C
RDS(ON) 10s 30
10.0 100s
limited
Power (W)
-ID (Amps)
0.1s 1ms
20
10ms
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient
RJA=55C/W
Thermal Resistance
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance