Escolar Documentos
Profissional Documentos
Cultura Documentos
Nilton Morimoto
ICBrazilCoordinator,PSI/USP
EricFabris
CTTechnicalCoordinator,EE/UFRGS
OscarSalviani
CT2LocalCoordinator,CTI/MCTI
Joo Martino
CT3LocalCoordinator,PSI/USP
ICBrazilProgram
Ocomeodetudo
Electrode Gate
Resistance NMOS Transistor
Hot
Carrier
Stability
SD Series
Resistance
0.09 m
Thin Oxide
Stability-
Electrical/Phys
Channel
ical
Profile , SCE,
Fluctuations,
Quantum
Effects
Capacitor tipo trincheira
Gates / Chip Vs. No. Levels Of Interconnect
100.00
10.00 7-Level
Metal
3-Level No. Levels Of
Metal Interconnect
1.00
Gates/Chip (Millions)
0.3 Million
Gates/Chip
0.10
1990 1992 1994 1996 1998 2000 2002 2004 2006 2008
Year Of First Introduction
Increasing Number Of Contacts
And Vias (Nodes) Per Chip
0.25 m Technology:
10 Million Logic Transistors / Chip
~ 50 Million Nodes / Chip
Increasing Number Of Contacts
And Vias (Nodes) Per Chip
Yield:
5% Loss:
5 Bad Nodes / (100 chips X 50Million Nodes)
1 Bad / 1 Billion Nodes!
Reliability:
10 FIT (0.1% Device Failures In 10 Years):
1 Failed Node / (1000 Chips X 50 Million Nodes)
1 Failure / 50 Billion Nodes!
Driving Forces
Technical
ICBrazilProgram
Trends: The Network is driving technology
2000...
The Network
1990s
The PC
1980s
Computer/Workstation
1970s
Military/Aerospace
Networking and Computing
Systems Group Enterprise
Computing
Personal Systems
Computing Division
Systems
Networking
Division
Systems Division
Access
C.O.
N IC
Router Backbone
Switch/Hub C.O.
10/100 Ethernet Telecom
Switch
ATM
Switch
Modems Access
Node
Communications
Transmission & Access Basestations
Systems Division
Wireless Infrastructure Systems
Division
Enterprise Routers
Switch/Hub
platforms
Central Office
Switching and
Transmission
ATM Switching
Analog Modems
Remote Access
Servers Access Mux
(DSLAM)
Cable Modems
Wireless
Infrastructure
ADSL Modems
Infrastructure
ULSI Process Roadmap
Dual Inlaid
Copper with SiOF
Low K ILD 1000 MHz
0.10
1.2 volts
Dual Inlaid
Copper
Interconnect
Process Performance
600 MHz
0.13 TFSOI
1.5 volts
400 MHz
0.15
1.8 volts
350 MHz
0.18
1.8 volts
300 MHz
0.27
2.5 volts BuriedOxide
200 MHz
0.35
2.5 volts SiliconSubstrate
120 MHz
0.50
3.3 volts Production Dates
1994 1995 1996 1997 1998 1999 2000 2001
Driving Forces
Marketand economic
ICBrazilProgram
WhatisDrivingStrongFDIinward?
Marketsizeandstrongindustrialbase
Agrowingdomesticelectronicsmarket
BrazilianElectronicsMarket[B$]
Afastgrowingbusinessorientedeconomywithahugeelectronicsmarket
IndustrialPolicyandMarketResponseTimeline
2.ICBrazilProgram
1. Objectives
2. Organization
3. TrainingCenters
4. DesignHouses
5. ExamplesofIC
ICBrazilProgram
2.1BrazilICProgram Start
July2005
LaunchedbyCATI/SEPIN/MCT
InitiativeofAcademy,GovernmentandIndustry
ICBrazilProgram
2.1ICBrazil Vision&Objectives
Topromotethedevelopmentofanecosystemin
microelectronicsinBrazilandtheinsertionofBrazilinthe
semiconductormarket
PromotelocalICcompanies
Attractionofinternationalcompanies
Promoteelectronicsinnovation:RFID,DTV,instrumentation,
automation,
Synergywithothergovernmentalincentives:
Informaticslaw
PADIS programforsemiconductors anddisplays
PDP
SubventionprogramsbyFINEPandBNDES
ICBrazilProgram
2.1FocusonICDesign
DemandfornewICs:
Growingmarkets
Newapplications
GrowingopportunityforFabless(since2006:>20%)
Fertilefieldforinnovation
SomeTechnicalChallenges:
Growingcomplexity&functionality
Powerconsuptionandheatremoval
SoCandSIP
Growingparametervariability redundancyand
routeautocorrection
ICBrazilProgram
ICBrazilOrganizationChart
ICBrazilProgram
2.3TrainingCenters
Objectives:
IncreasespecializedhumanresourcesinICdesign
AttracttalentpeopleforR&Doncommercial
applications
Create,inshorttime,acriticalmassofIC
designerstopromotesemiconductoractivitiesin
Brazil
ICBrazilProgram
2.3TrainingCenters
CT1 UFRGS,PortoAlegre start:April2008
CT2 CTI,Campinas start:August2008
CT3 USP,SoPaulo Start:August2014
Structure:PhasesI,IIeIII
PhaseI:theoryandEDAtools 5months
PhaseII:ICdesignproject 7months
PhaseIII:internshipatDHsorcompanies 12months
ICBrazilProgram
2.4DesignHouses
Total=19
Perseptia
STISemiconductors
ICBrazilProgram
GeneralTendenciesandChallenges
New products and applications
Cloud computing
Convergences of functions: notebook or
smartphone?
Mobility and easy to use
Universal access, connectivity, interoperability
Wireless sensor network
Ambient energy harvesting
Ecological correctness
ICBrazilProgram
Some specific opportunity fields
RFID: cattle, vehicles, food, goods, documents,
health items (blood, drugs, vaccines), etc.
Brazilian Digital TV
Low cost education tools, Tablet,
Wireless sensor networks: agriculture, environment,
energy, health, etc
Energy: smart grid, deep water oil exploration,
ethanol production chain
Embedded electronics: agriculture implements, cars,
avionics
ICBrazilProgram
Ecologicalchallenges GreenICT
Norms:
RoHS RestrictionofHazard
toxidade
Substance
WEEE WasteofElectroElectronic
Equipment reciclagem
EcodesignConceptsandLifeCycle
Analysis energia
ICBrazilProgram
Energy
IncreasingenergyconsumptionbyICT(10%of
electricalenergy)
Demandforcarbonfreeenergy(green)
Alternativeenergies:
Eolic
Photovoltaic CAGR>40%
Otherformsofenergyharvesting
Reduce/optimizeenergyconsumption:
Smartgrid
LightanddisplaysbyLEDandOLED
Ecodesign ofproducts(includesenergyefficiency)
ICBrazilProgram
PhotovoltaicEnergy
Installedperyear:2009=7,3GW,2010=17,5GW
(ITAIPU=14GW)
HeadedbyGermany:2009= 3,8GW,2010=7,3GW
PVenergycost:2009=$2.15Wp;2010=$1.75Wp
cSiwillcontinuetodominatethenext~10years (in
2020:consumptionof51.000tpolysilicon,with3g/W)
ICBrazilProgram
Thank You
Obrigado
morimoto@LSI.USP.BR
www.cibrasil.gov.br
ACKNOWLEDGMENTS
ICBrazilProgram