CHARACTERISTICS OF JUNCTION FIELD EFFECT

TRANSISTOR AND METAL OXIDE SEMICONDUTER FET

Ashish Joseph
M.Sc Physics
Roll No-16510016
ashish.joseph@iitgn.ac.in

21 march 2017

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Physics Lab Report IIT GANDHINAGAR

Contents
1 ABSTRACT 3

2 COMPONENTS 3

3 THEORY 3
3.1 FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3.2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.3 JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.3.1 DRAIN CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3.3.2 TRANSFER CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . 5
3.4 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.4.1 DRAIN CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.4.2 TRANSFER CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . 7

4 CALCULATION 7
4.1 JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 Reference 8

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Physics Lab Report IIT GANDHINAGAR

1 ABSTRACT
To Plot the characteristics of field effect transistor and a metal oxcide semiconductor field effect
transistor.

2 COMPONENTS
MOSFET and JFET box, Banana wires.

3 THEORY
3.1 FET

JFET operation can be compared to that of a garden hose. The flow of water through a hose
can be controlled by squeezing it to reduce the cross section and the flow of electric charge through
a JFET is controlled by constricting the current-carrying channel. The current also depends on
the electric field between source and drain (analogous to the difference in pressure on either end of
the hose). Constriction of the conducting channel is accomplished using the field effect: a voltage
between the gate and the source is applied to reverse bias the gate-source pn-junction, thereby
widening the depletion layer of this junction (see top figure), encroaching upon the conducting
channel and restricting its cross-sectional area. The depletion layer is so-called because it is de-
pleted of mobile carriers and so is electrically non-conducting for practical purposes. When the
depletion layer spans the width of the conduction channel, pinch-off is achieved and drain-to-source
conduction stops. Pinch-off occurs at a particular reverse bias (VGS ) of the gate-source junction.
The pinch-off voltage (Vp ) varies considerably, even among devices of the same channel.1 To switch
off an n-channel device requires a negative gate-source voltage (VGS ). Conversely, to switch off a
p-channel device requires positive VGS . In normal operation, the electric field developed by the gate
blocks source-drain conduction to some extent. Some JFET devices are symmetrical with respect
to the source and drain.

bias.png

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Physics Lab Report IIT GANDHINAGAR

3.2 MOSFET

The metaloxidesemiconductor field-effect transistor (MOSFET) is a transistor used for ampli-

fying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode
can induce a conducting channel between the two other contacts called source and drain. The
channel can be of n-type or p-type, and is accordingly called an n-MOSFET or a p-MOSFET.
The metal oxide semiconductor field effect transistor MOSFET a voltage control current device.
It differs from junction field effect transistor JFET that it has no pn junction structure. It has a
metal gate, which insulates the conducting channel with silicon oxide SiO2. In the modern design,
metal gate has been replaced by either p+ or n+ polysilicon. There are two types of MOSFET
namely depletion-enhancement DE and enhancement E types. The DE type has a narrow channel
adjacent to the gate connecting the drain and source of the transistor. It can operate in either
depletion mode or enhancement mode. The mode of operation is like the JFET. The E type does
not have a narrow connecting channel. It operates by forming a conducting channel of the same
type like the source and drain. The channel is formed either by attracting electron or depleting
away electron to form an n-channel or p-channel connecting the source and the drain. MOSFET not
only can be used to design amplification circuit. It can also be used as a capacitor and a resistor.
This capability makes the VLSI design simpler because there is no need to use other element for
capacitor and resistor in the design.

3.3 JFET
3.3.1 DRAIN CHARACTERISTICS
Obs. VGS =0V VGS =-0.92V VGS =-1.9V
No. VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
1 0.5 12.7 0.6 9.6 1.13 2.2
2 1.03 23.1 1.02 13.7 2.05 2.5
3 2.12 34.1 1.63 16.7 3.00 3.9
4 3.14 37.1 2.19 18.9 3.89 4.1
5 4.83 37.3 3.6 19.6 4.5 4.1
6 5.44 36.7 4.7 20.2 5.49 4.3
7 6.7 36.9 5.86 20.5 6.33 4.5
8 7.38 36.7 6.99 20.7 7.39 4.7
9 8.06 36.5 7.86 20.7 8.39 4.7
10 11.05 21.1 10.03 5.0

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Physics Lab Report IIT GANDHINAGAR

3.3.2 TRANSFER CHARACTERISTICS

Obs. VDS =3V VDS =4V VDS =5V
No. VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)
1 -0.00 37.0 -0.00 37.1 -0.00 38.1
2 -0.5 26.9 -0.49 26.5 -0.5 27.0
3 -1.02 17.1 -1.01 17.2 -1.00 17.8
4 -1.5 9.4 -1.5 9.5 -1.5 9.8
5 -2.0 3.2 -1.99 3.4 -2.0 3.5
6 -2.5 0.1 -2.5 0.2 -2.5 0.2

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3.4 MOSFET
3.4.1 DRAIN CHARACTERISTICS
Obs. VGS =4V VGS =5V VGS =6V
No. VDS (V) ID (mA) VDS (V) ID (mA) VDS (V) ID (mA)
1 0.20 1.1 0.21 1.1 0.21 1.1
2 0.54 2.8 0.51 2.7 0.54 2.8
3 0.70 3.7 0.97 5.1 1.13 6.0
4 1.02 5.1 1.34 7.2 1.98 10.5
5 1.60 5.3 1.99 10.6 2.69 14.3
6 2.1 5.3 3.17 14.8 3.32 17.6
7 4.5 5.4 4.85 14.9 4.16 22.1
8 12.5 5.4 8.02 15.0 4.84 24.9
9 19.0 5.6 12.6 15.1 9.30 25.1
10 14.53 25.4
11 31.5 25.9

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Physics Lab Report IIT GANDHINAGAR

3.4.2 TRANSFER CHARACTERISTICS

Obs. VDS =10V VDS =20V VDS =28V
No. VGS (V) ID (mA) VGS (V) ID (mA) VGS (V) ID (mA)
1 1.00 0 2.3 0 3.0 0.1
2 2.00 0 2.6 0.002 3.2 0.5
3 2.65 0.001 3.0 0.04 3.3 1.1
4 3.08 0.093 3.5 1.407 3.5 2.1
5 3.52 1.565 4.0 5.3 4.0 6.0
6 4.02 5.7 4.5 10.3 4.5 10.6
7 4.51 10.4 5.0 15.6 5.0 15.6
8 5.07 16.1 6.0 25.5 6.0 25.4
9 5.54 20.9 7.0 35.9 7.0 36.0
10 6.06 26.3
11 7.46 36.2

4 CALCULATION
4.1 JFET
VDS
Drain resistance , RD =
ID
ID
T ransconductance , gm =
VGS
Amplif ication f actor , = RD gm
(RD )VGS =0V = 117.27 , (RD )VGS =0.92V = 203.3 , (RD )VGS =1.91V = 678.5
(gm )VDS =3V = 0.0181 , VDS = 4V = 0.0151 , VDS = 6V = 0.0161
() = 5.42
P inch of f voltage = 3.00 volt

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Physics Lab Report IIT GANDHINAGAR

IDSS = 37.4, V olt

5 Reference
1. https://www.ee.iitb.ac.in/course/ dghosh/mosfetSlides.pdf
2. http://iitg.vlab.co.in/?sub=59brch=165sim=270cnt=1
3. http://staff.utar.edu.my/limsk/Basic20Electronics/Chapter20420JFET20Theory20and20Applications.pdf

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