ALEJOS, BRYAN CHRISTIAN D.

CASCADED SYSTEM: TWO COMMON EMITTER ,EMITTER BIAS (UNBYPASSED) CONFIGURATION

97
I.CIRCUIT DESCRIPTION

The combined configuration of two common emitter, emitter configuration

biasing will provide HIGH input impedance, relatively LOW output impedance as per
required and stable operating point in case of B parameter variation .

First Stage and Second Stage:

The two stages are two CE emitter bias configurations coupled together that
composed of base resistor, collector resistor and emitter resistor and general purpose
transistors. The base resistor determines which appropriate base current will operate
theamplifier without distortion, the emitter resistor is one of the factors in determining
the input impedance and voltage gain and it provides a negative feedback in
base resistor in case of change in HFE parameter, thus it would stabilized the
amplifying device. The collector resistor is one of the factors in determining the output
impedance and the voltage gain of the amplifying device. The final output
voltage signal is in phase with the input voltage signal because the product of its
voltage gain is positive.The trade-off in stabilizing the circuit is that the possible voltage
gain is not maximize.
II. Schematic Diagram
ALEJOS, BRYAN CHRISTIAN D.
ALEJOS, BRYAN CHRISTIAN D.
ALEJOS, BRYAN CHRISTIAN D.
ALEJOS, BRYAN CHRISTIAN D.
ALEJOS, BRYAN CHRISTIAN D.
 BC547B
General Purpose Transistor
Features:
NPN general purpose transistors, especially suited for use in driver stages of audio
amplifiers, low noise input stages of tape recorders, HI-FI amplifiers, signal processing
circuits of television receivers.

TO-92 Plastic Package Dimensions Minimum Maximum

A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5
G 1.40
1.14
H 1.53
K 12.70 -
Dimensions : Millimetres

Pin Configuration:
1. Collector
2. Base
3. Emitter

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 BC547B
General Purpose Transistor
Absolute Maximum Ratings (Ta = 25C unless otherwise specified)
Parameters Symbol Value Unit

Collector Emitter Voltage VCEO 45

Collector Emitter Voltage VCES

50 V
Collector Base Voltage VCBO

Emitter Base Voltage VEBO 6.0

Collector Current Continuous IC 100

Peak ICM 200

Base Current Peak IBM mA

200
Emitter Current Peak IEM

Power Dissipation at Ta = 25C 500 mW

PTA
Derate above 25C 4.0 mW/C

Storage Temperature Tstg -65 to +150

C
Junction Temperature Tj 150

Thermal Resistance

Junction to Ambient Rth (j-a) 250 C/W

Electrical Characteristics (Ta = 25C unless otherwise specified)

Parameters Symbol Test Condition Value Unit

Collector Emitter Voltage VCEO IC = 1mA, IB = 0 >45

Collector Base Voltage VCBO IC = 10A, IE = 0 >50 V

Emitter Base Voltage VEBO IE = 10A, IC = 0 >6.0

VCB = 30V, IE = 0
<50 nA
ICBO TJ = 150C
<5.0 A
Collector Cut off Current VCB = 30V, IE = 0
VCE = 50V, VBE = 0
<15 nA
ICES TJ = 125C

Collector Cut off Current VCE = 50V, VBE = 0 <4.0 A

DC Current Gain hFE IC = 2mA, VCE = 5V 200 -

IC = 10mA, IB = 0.5mA <0.25
Collector Emitter Saturation Voltage VCE (sat)
IC = 100mA, IB = 5mA <0.60
IC = 10mA, IB = 0.5mA Typical 0.70
Base Emitter Saturation Voltage VBE (sat) V
IC = 100mA, IB = 5mA Typical 0.90
IC = 2mA, VCE = 5V 0.55 - 0.70
Base Emitter On Voltage VBE (on)
IC = 10mA, VCE = 5V <0.72

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 BC547B
General Purpose Transistor
Electrical Characteristics (Ta = 25C unless otherwise specified)
Parameters Symbol Test Condition Value Units

Dynamic Characteristics

IC = 10mA, VCE = 5V
Transition Frequency fT Typical 300 MHz
f = 100MHz
Collector Output Capacitance Ccbo VCB = 10V, f = 1MHz <4.50
pF
Emitter Input Capacitance Cib VEB = 0.5V, f = 1MHz Typical 9.0
IC = 0.2mA, VCE = 5V
Noise Figure NF <10 dB
Rs = 1k, f = 200Hz

Small Signal Current Gain hfe Typical 330 -

Input Impedance hie 3.2 - 8.5 k

IC = 2mA, VCE = 5V
Voltage Feedback Ratio hre Typical 2.0 x 10-4

Output Impedance hoe <60

Specifications
VCBO hFE fT
VCEO IC Ptot
Maximum Minimum (Typical) Package Part Number
(V) (A) at IC = 2mA (mW)
(V) MHz

45 50 0.1 200 300 625 TO-92 BC547B

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