SPP04N80C3

CoolMOSTM Power Transistor

Product Summary
Features
V DS 800 V
New revolutionary high voltage technology
R DS(on)max @ Tj = 25C 1.3
Extreme dv/dt rated
Q g,typ 23 nC
High peak current capability

Qualified according to JEDEC1) for target applications

Pb-free lead plating; RoHS compliant PG-TO220-3

Ultra low gate charge

Ultra low effective capacitances

CoolMOSTM 800V designed for:

Industrial application with high DC bulk voltage

Switching Application ( i.e. active clamp forward )

Type Package Marking

SPP04N80C3 PG-TO220-3 04N80C3

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 C 4 A

T C=100 C 2.5

Pulsed drain current2) I D,pulse T C=25 C 12

Avalanche energy, single pulse E AS I D=0.8 A, V DD=50 V 170 mJ

Avalanche energy, repetitive t AR2),3) E AR I D=4 A, V DD=50 V 0.1

Avalanche current, repetitive t AR2),3) I AR 4 A

MOSFET dv /dt ruggedness dv /dt V DS=0640 V 50 V/ns

Gate source voltage V GS static 20 V

AC (f >1 Hz) 30

Power dissipation P tot T C=25 C 63 W

Operating and storage temperature T j, T stg -55 ... 150 C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 2.91 page 1 2011-09-28

 SPP04N80C3

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current IS 4 A

T C=25 C
Diode pulse current2) I S,pulse 12

Reverse diode dv /dt 4) dv /dt 4 V/ns

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 2 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 C
wave soldering only allowed at leads from case for 10s

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A 800 - - V

Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=4 A - 870 -

Gate threshold voltage V GS(th) V DS=V GS, I D=0.24 mA 2.1 3 3.9

V DS=800 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 10 A
T j=25 C

V DS=800 V, V GS=0 V,
- 50 -
T j=150 C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=2.5 A,
Drain-source on-state resistance R DS(on) - 1.1 1.3
T j=25 C

V GS=10 V, I D=2.5 A,
- 3 -
T j=150 C

Gate resistance RG f =1 MHz, open drain - 1.2 -

Rev. 2.91 page 2 2011-09-28

 SPP04N80C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 570 - pF

Output capacitance C oss f =1 MHz - 25 -

Effective output capacitance, energy

C o(er) - 19 -
related5)
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
C o(tr) - 51 -
related6)

Turn-on delay time t d(on) - 25 - ns

Rise time tr V DD=400 V, - 15 -

V GS=0/10 V, I D=4 A,
Turn-off delay time t d(off) R G=22 ? , T j=25 C - 72 -

Fall time tf - 12 -

Gate Charge Characteristics

Gate to source charge Q gs - 3 - nC

Gate to drain charge Q gd V DD=640 V, I D=4A, - 12 -

Qg V GS=0 to 10 V
Gate charge total - 23 31

Gate plateau voltage V plateau - 5.5 - V

Reverse Diode

V GS=0 V, I F=I S=4 A,

Diode forward voltage V SD - 1 1.2 V
T j=25 C

Reverse recovery time t rr - 520 - ns

V R=400 V, I F=I S=4 A,
Reverse recovery charge Q rr - 4 - C
di F/dt =100 A/s
Peak reverse recovery current I rrm - 12 - A

1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD=ID, di/dt=400A/s, VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax , identical low side and high side switch
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.91 page 3 2011-09-28

 SPP04N80C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 C; D =0
parameter: t p

70 102
limited by on-state
resistance

60

1 s
101
50
10 s

100 s
40
P tot [W]

I D [A]
100
1 ms
30 10 ms

20 DC
10-1

10

0 10-2
0 25 50 75 100 125 150 1 10 100 1000
T C [C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T j=25 C; t p=10 s
parameter: D=t p/T parameter: V GS

101 15

20 V

12

0.5
100
10 V
9
Z thJC [K/W]

0.2
I D [A]

0.1
0.05
6V

0.02 6
10-1 0.01
5.5 V
single pulse

3 5V

4.5 V

10-2 0
10-5 10-4 10-3 10-2 10-1 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 2.91 page 4 2011-09-28

 SPP04N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 C; t p=10 s R DS(on)=f(I D); T j=150 C
parameter: V GS parameter: V GS

6 5.4
20 V
10 V

6V 5
5

5.5 V 4.6
4

R DS(on) []
4.2
I D [A]

3
5V
3.8
6V
10 V
2
4.5 V 3.4 5.5 V
20 V
4.5 V 5V
4V
1
3

0 2.6
0 5 10 15 20 25 0 2 4 6 8
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=2.5 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 s
parameter: T j

3.6 15

3.2 25 C

2.8

2.4 10
R DS(on) []

2
I D [A]

1.6 150 C
typ
98 %

1.2 5

0.8

0.4

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [C] V GS [V]

Rev. 2.91 page 5 2011-09-28

 SPP04N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=4 A pulsed I F=f(V SD); t p=10 s
parameter: V DD parameter: T j

10 102

150C (98%)

8
160 V
25 C
640 V
25C (98C)
101
6 150 C
V GS [V]

4 I F [A]
100

0 10-1
0 4 8 12 16 20 24 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=0.8 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

180 960

920
150

880
120
V BR(DSS) [V]

840
E AS [mJ]

90

800

60
760

30
720

0 680
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T j [C] T j [C]

Rev. 2.91 page 6 2011-09-28

 SPP04N80C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

104 5

4
103
Ciss

E oss [J]
C [pF]

102

2
Coss

101
Crss 1

100 0
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
V DS [V] V DS [V]

Rev. 2.91 page 7 2011-09-28

 SPP04N80C3

Definition of diode switching characteristics

Rev. 2.91 page 8 2011-09-28

 SPP04N80C3

PG-TO220-3: Outline

Rev. 2.91 page 9 2011-09-28

 SPP04N80C3

Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
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Rev. 2.91 page 10 2011-09-28