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SIPMOS Power-Transistor
Features Product Summary
P-Channel Drain source voltage VDS -60 V
Enhancement mode Drain-source on-state resistance RDS(on) 0.3 W
Page 1 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 1) - - 40
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Dynamic Characteristics
Transconductance gfs 1.5 3.6 - S
VDS2*I D*RDS(on)max , ID = -6.2 A
Input capacitance Ciss - 335 420 pF
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance Coss - 105 135
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance Crss - 65 95
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time td(on) - 16 24 ns
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time tr - 46 69
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time td(off) - 48 72
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time tf - 14 21
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Page 3 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Dynamic Characteristics
Gate to source charge Qgs - 1.4 2.1 nC
VDD = -48 , ID = -8.8 A
Gate to drain charge Qgd - 4 6
VDD = -48 V, ID = -8.8 A
Gate charge total Qg - 10 15
VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V
Gate plateau voltage V(plateau) - -3.85 - V
VDD = -48 , I D = -8.8 A
Page 4 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Power dissipation Drain current
Ptot = f (TC) ID = f (TC )
parameter: VGS 10 V
SPP08P06P SPP08P06P
50 -10
W A
40 -8
35 -7
Ptot
ID
30 -6
25 -5
20 -4
15 -3
10 -2
5 -1
0 0
0 20 40 60 80 100 120 140 160 C 190 0 20 40 60 80 100 120 140 160 C 190
TC TC
K/W
tp = 12.0s
A
10 0
Z thJC
-10 1
100 s
ID
10 -1
D
/I
DS
V
D = 0.50
=
1 ms -2
)
0.20
on
10
(
DS
R
0 0.10
-10 10 ms
0.05
DC single pulse
0.02
10 -3
0.01
-10 -1 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
-10 -10 -10 V -10 10 10 10 10 10 10 s 10
VDS tp
Page 5 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Typ. output characteristic Typ. drain-source-on-resistance
I D = f (VDS); T j=25C RDS(on) = f (ID )
parameter: tp = 80 s parameter: VGS
SPP08P06P SPP08P06P
-21 Ptot = 42.00W 1.0
A W a b c d e f g h
j i VGS [V]
-18
a -4.0
b -4.5
0.8
-16 h c -5.0
RDS(on)
d -5.5
0.7
-14
g e -6.0
ID
f -6.5 0.6
-12
f g -7.0
h -7.5 0.5
-10
i -8.0
e
j -10.0 0.4
-8
d
-6 0.3
c
-4 0.2
b VGS [V] =
-2 0.1 a b c d e f g h i j i
j
a -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0
0 0.0
0 -2 -4 -6 -8 V -11 0 -2 -4 -6 -8 -10 -12 -14 A -18
VDS ID
S
-24
-22
-20 4
gfs
ID
-18
-16
3
-14
-12
-10 2
-8
-6
1
-4
-2
0 0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20
VGS ID
Page 6 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Drain-source on-state resistance Gate threshold voltage
RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : I D = -6.2 A, V GS = -10 V parameter: VGS = VDS , ID = -250 A
SPP08P06P
1.0 -5.0
W V
98%
0.8 -4.0
RDS(on)
V GS(th)
0.7 -3.5
typ
0.6 -3.0
0.5 -2.5
2%
98%
0.4 -2.0
typ
0.3 -1.5
0.2 -1.0
0.1 -0.5
0.0 0.0
-60 -20 20 60 100 140 C 200 -60 -20 20 60 100 C 180
Tj Tj
pF Ciss
-10 1
IF
C
10 2
Coss
Crss
-10 0
Tj = 25 C typ
Tj = 175 C typ
Tj = 25 C (98%)
Tj = 175 C (98%)
10 1 -10 -1
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD
Page 7 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Avalanche energy Typ. gate charge
EAS = f (Tj) VGS = f (QGate )
para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W parameter: ID = -8.8 A pulsed
SPP08P06P
80 -16
mJ V
60 -12
E AS
VGS
50 -10
40 -8
0,2 VDS max 0,8 VDS max
30 -6
20 -4
10 -2
0 0
25 45 65 85 105 125 145 C 185 0 2 4 6 8 10 12 nC 15
Tj QGate
SPP08P06P
-72
-68
V(BR)DSS
-66
-64
-62
-60
-58
-56
-54
-60 -20 20 60 100 140 C 200
Tj
Page 8 1999-11-22
SPP08P06P
Preliminary data SPB08P06P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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For information on the types in question please contact your nearest Infineon Technologies Office.
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or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 9 1999-11-22
This datasheet has been download from:
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