Ordering number:ENN6314

N-Channel Silicon MOSFET

2SK2969

Ultrahigh-Speed Switching Applications

Features Package Dimensions

Low ON resistance. unit:mm
Ultrahigh-speed switching. 2091A
2.5V drive.
[2SK2969]
0.4

0.5
0.16
3

0 to 0.1

2.5
1.5
1 0.95 0.95 2

0.5
1.9
2.9

1 : Gate

1.1
2 : Source

0.8
3 : Drain
SANYO : CP
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS 10 V
Drain Current (DC) ID 0.8 A
Drain Current (Pulse) IDP PW10s, duty cycle1% 3.2 A
Allowable Power Dissipation PD 0.25 W
Channel Temperature Tch 150 C
Storage Temperature Tstg 55 to +150 C

Electrical Characteristics at Ta = 25C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 10 A
Gate-to-Source Leakage Current IGSS VGS=8V, VDS=0 10 A
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance | yfs | VDS=10V, ID=400mA 1.1 1.6 S
RDS(on)1 ID=400mA, VGS=4V 280 370 m
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=100mA, VGS=2.5V 340 520 m
Marking : GK Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-2652 No.63141/4
 2SK2969
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss VDS=10V, f=1MHz 90 pF
Output Capacitance Coss VDS=10V, f=1MHz 50 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time tr See specified Test Circuit 10 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 30 ns
Fall Time tf See specified Test Circuit 20 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=800mA 6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=800mA 1 nC
Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=800mA 2 nC
Diode Forward Voltage VSD IS=800mA, VGS=0 0.8 1.2 V

Switching Time Test Circuit

VDD=15V
VIN
4V
0V ID=400mA
VIN RL=37.5
PW=10s D VOUT
D.C.1%

2SK2969
P.G 50
S

ID - VDS ID - VGS
1.0 2.0
8.0V 6.0V VDS=10V
0.9 4.0V 3.0V 1.8
2.5V

0.8 1.6
Drain Current, ID A

Drain Current, ID A
V
2.0

0.7
V

1.4
10.0

0.6 1.2
VGS=1.5V
0.5 1.0

0.4 0.8
C
25

0.3 0.6
C

0.2 0.4
-25
C
75

Ta=

0.1 0.2

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5
Drain-to-Source Voltage, VDS V Gate-to-Source Voltage, VGS V

10
| yf s | - ID R DS(on) - VGS
500
VDS=10V Ta=25C
Forward Transfer Admittance, | yfs | S

7 450
5
On-State Resistance, RDS(on) m

400
3 C ID=0.4A
-25 350
Ta= 25
C 0.1A
2

75
C 300
Static Drain-to-Source

1.0 250

7
200
5
150
3
100
2
50

0.1 0
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID A Gate-to-Source Voltage, VGS V

No.63142/4
 2SK2969
R DS(on) - Ta I F - VSD
600 5
VGS=0
550 3
2
On-State Resistance, RDS (on) m
500

450 1.0
V

Forward Current, IF A
=2.5 7
400
A ,VGS
0.1 5
350 I D= =4V
VGS
.4A, 3
Static Drain-to-Source

300 ID = 0
2
250
0.1
200 7

25C
5

75C
25C
150

100 3

Ta=-
2
50
0 0.01
-60 -40 -20 0 20 40 60 80 100 120 140 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Ambient Temperature, Ta C Diode Forward Voltage, VSD V
Ciss,Coss,Crss - VDS VGS - Q g
1000 10
7 f=1MHz VDS=10V
5 9 ID =800mA

Gate-to-Source Voltage, VGS V

3
8
2
Ciss, Coss, Crss pF

7
100 Ciss
7 6
5
Coss
3 5
2
Crss 4
10
3
7
5
2
3
2 1

1.0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6
Drain-to-Source Voltage, VDS V Total Gate Charge, Qg nC

SW Time - I D A S O
100 7
VDD =15V 5 IDP=3.2A 100s
7
VGS=4V 3
5 2 1m
Switching Time, SW Time ns

ID=0.8A 10 s
td(off) 1.0
ms
3 7
Drain Current, ID A

tf 5
2 3 DC
2 op
tr td(on) er
0.1 at
10
7 io
n
7 5 Operation in this area
5
3 is limited by RDS(on).
2
0.01
3
7
5
2
3
2 Ta=25C
1.0
Single pulse
0.001
7 0.1 2 3 5 7 1.0 2 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Drain Current, ID A Drain-to-Source Voltage, VDS V

PD - Ta
0.28
Allowable Power Dissipation, PD W

0.25
0.24

0.20

0.16

0.12

0.08

0.04

0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta C

No.63143/4
 2SK2969

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.63144/4
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