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OUTLINE
Capacitors
Capacitors as Sensors
Chemicapacitor
Diaphragm Pressure Sensor
Condenser Microphone
Capacitors as Electrostatic Actuators
Signal Conditioning
References
Homework
CAPACITORS
Capacitor - a two terminal device whose current is proportional to
the time rate of change of the applied voltage; I
I = C dV/dt +
C V
-
C1 air
C Total = C1C2/(C1+C2)
C2
Vacuum 1 Methanol 30
Air 1.00059 Photoresist 3
Acetone 20 Plexiglass 3.4
Barium strontium 500 Polyimide 2.8
titanate
Rubber 3
Benzene 2.284
Silicon 11.7
Conjugated 6 to 100,000
Polymers Silicon dioxide 3.9
Ethanol 24.3 Silicon Nitride 7.5
Glycerin 42.5 Teflon 2.1
Glass 5-10 Water 80-88
CALCULATIONS
C = (N-1) eoer L h /s
h = height of fingers Example: 200 fingers, h = 2um, s=1um, air
s = space between fingers C = 0.35 pF
N = number of fingers
L = Rochester
length of finger overlap
Institute of Technology
Microelectronic Engineering
00
C = LN 4 eoer 1
Jo2 (2n-1)ps
p 2n-1 2(s+w)
n=1
Jo = zero order Bessel function
w = width of fingers Reference:
s = space between fingers
N =Rochester
number Instituteof fingers
of Technology
Lvovich, Liu and Smiechowski,
Microelectronic Engineering
L = length of finger overlap
March 25, 2016 Dr. Lynn Fuller, Professor Page 8
MEMS Capacitor Sensors
d1 and d2 (interrogation
depth)
er1
N = number of fingers d1
d2
er2
Rochester Institute of Technology
Microelectronic Engineering
er = er1 + er2
March 25, 2016 Dr. Lynn Fuller, Professor Page 9
MEMS Capacitor Sensors
1
(e r1 e r 2 )e 0 K [(1 k ) ] 2 2
C = ( N 1) L
2 K (k )
p w
k = cos
er1 2 ( s w)
1
d1 1
K (k ) = dt
d2
er2
0 1 t 1 k t
2 2 2
er = er1 + er2
Jo is zero order Bessel function
Rochester Institute of Technology
Microelectronic Engineering V.F.Lvovich, C.C.Liu, M.F.Smiechowski
March 25, 2016 Dr. Lynn Fuller, Professor Page 10
MEMS Capacitor Sensors
er1 C fingers
t
SiO2
C = C fingers + C to substrate / 2
(if silicon substrate is treated as a conductor)
C substrate C fingers
C = eo er area / t
e =e
Rochester Institute of Technology
r oxide
Microelectronic Engineering er = er1
March 25, 2016 Dr. Lynn Fuller, Professor Page 11
MEMS Capacitor Sensors
CALCULATIONS
C/L = 2 p eo er / ln(b/a)
b = inside radius of outside conductor
a = radius of inside conductor
Reference: Kraus and Carver
d
C1
C
d C
C2
C1 C2
CAPACITORS AS SENSORS
microphone gyroscope
CHEMICAL SENSOR
diaphragm
Diaphragm: thickness ()
Displacement (y)
3PR 4[(1/)2-1]
4 2-1]
y= = (249.979)PR2 [(1/)
16E(1/)23 E(1/)
3
PV = nRT
F1 = force on diaphragm = external pressure times area of diaphragm
F2 = force due to captured volume of air under the diaphragm
F3 = force to mechanically deform the diaphragm
F1
rs h
h
rd d
Ad y
F2 + F3
y (m) P (N/m2)
0 0 P (N/m2) vs displacement y (m)
0.1 5103.44
0.2 10748.09
0.3 17025.03 3000000
0.4 24047
0.5 31955.23
0.6 40929.06 2500000
0.7 51199.69
0.8 63070.47 2000000
0.9 76947.31
1 93386.12
1.1 113169.1 1500000
1.2 137433.1
1.3 167895.7
1.4 207281.3 1000000
1.5 260184.8
1.6 335009.7
500000
1.7 448945.4
1.8 643513.4
1.9 1051199 0
2 2446196 0 0.5 1 1.5 2 2.5
CONDENSER MICROPHONE
ALUMINUM DIAPHRAGM
1 m Aluminum
2.0 m Gap
Rochester Institute of Technology
Microelectronic Engineering
Si Wafer
Bottom
Plate
Air Gap (~1 atm)
Kerstin Babbitt - University of Rochester
Stephanie Bennett - Clarkson University
Sheila Kahwati - Syracuse University
An Pham - Rochester Institute of Technology
i R
9V
i
TL081 Vo
V C +
-9 V Vo = - i R
i = d (CV)/dt
Co = Average value of C
Cm = amplitude of C change i = V Cm 2 p f cos (2pft)
C = Co +Cm sin (2pft)
V is constant across C Vo = - 2pf V R Cm cos (2pft)
EXAMPLE CALCULATIONS
25
Amplitude of Vo = - 2p f V R Cm 20
Vout (mV)
15
10
0
0 2000 4000 6000 8000 10000
Frequency (Hz)
Rochester Institute of Technology
Microelectronic Engineering
+V
R3
R1 R2 Vo
+V
+V VTH
VT VTL t
0
+ t1
Vo
-
C1 is the sensor
C2 represents Scope Probe
Rochester Institute of Technology
Microelectronic Engineering
T
Rochester Institute of Technology
Microelectronic Engineering
CAPACITANCE TO VOLTAGE
+ Vo = - i R
Vin = Vm sin (2pft) C
i R
i
-
Vout
+ +
C
Vin
CAPACITANCE TO VOLTAGE
Peak Detector
Buffer
CAPACITANCE TO DC VOLTAGE
Q = CV
1
Cf
1 2
-
Vo
Vin +
Cx
Vo = - Vin Cx/Cf
Rochester Institute of Technology
Microelectronic Engineering
Capacitive
Pressure
External Electronics
L Sensor
C
Antenna
I
I
Microchip Antenna
PIC18F452 C
P
RS 232 R
To Memory
Display I
Filter -
A to D
+
Amp
Gnd
Rochester Institute of Technology
Microelectronic Engineering
Network Analyzer
Due to nearby LC
Resonant Frequency
wo = 1/(LC)0.5
fo = wo/2p
COMMERCIAL CHIPS
Operational Amplifier
Analog Switches
Non-Overlapping Clock
ANALOG SWITCHES
I
PMOS zero
Vt= -1
S D
V1 V2
D S
NMOS
Vt=+1
+5
For current flowing to the right (ie V1>V2) the PMOS transistor will be on if V1 is greater than the
threshold voltage, the NMOS transistor will be on if V2 is <4 volts. If we are charging up a capacitor
load at node 2 to 5 volts, initially current will flow through NMOS and PMOS but once V2 gets
above 4 volts the NMOS will be off. If we are trying to charge up V2 to V1 = +1 volt the PMOS will
never be on. A complementary situation occurs for current flow to the left. Single transistor switches
can be used if we are sure the Vgs will be more than the threshold voltage for the specific circuit
application. (or use larger voltages on the gates)
ANALOG SWITCH
CMOS Analog
Inverter Switch
1
2
R t2
CLK
Q 1
t1
t3
2
S
R t2
CLOCK 1
t1 Buffers
2
t3
S
REFERENCES