Rev 1.

3 BSP295

SIPMOS Small-Signal-Transistor
Feature Product Summary

N-Channel VDS 60 V

Enhancement mode RDS(on) 0.3 W

dv/dt rated ID 1.8 A

Pb-free lead plating; RoHS compliant PG-SOT-223

3
2
1 VPS05163

Type Package Tape and Reel Information Marking

BSP295 PG-SOT-223 L6327: 1000 pcs/reel BSP295

Maximum Ratings, at Tj = 25 C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TA=25C 1.8
TA=70C 1.44
Pulsed drain current I D puls 7.2
TA=25C
Reverse diode dv/dt dv/dt 6 kV/s
IS=1.8A, VDS=40V, di/dt=200A/s, Tjmax=150C

Gate source voltage VGS 20 V

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation Ptot 1.8 W
TA=25C

Operating and storage temperature T j , Tstg -55... +150 C

IEC climatic category; DIN IEC 68-1 55/150/56

Page 1 2007-02-07
 Rev 1.3 BSP295
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - 15 25 K/W
SMD version, device on PCB: RthJA
@ min. footprint - 80 115
@ 6 cm 2 cooling area 1) - 48 70

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 60 - - V
VGS=0, ID =250A

Gate threshold voltage, VGS = VDS VGS(th) 0.8 1.1 1.8

ID=400A

Zero gate voltage drain current I DSS A

VDS=60V, VGS =0, Tj=25C - - 0.1
VDS=60V, VGS =0, Tj=150C - 8 50
Gate-source leakage current I GSS - 1 10 nA
VGS=20V, VDS=0

Drain-source on-state resistance RDS(on) W

VGS=10V, ID=1.8A - 0.22 0.3
VGS=4.5V, ID=1.8A - 0.39 0.5

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.

Page 2 2007-02-07
 Rev 1.3 BSP295
Electrical Characteristics, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS2*ID*RDS(on)max, 0.8 1.7 - S
ID=1.44A

Input capacitance Ciss VGS=0, VDS=25V, - 295 368 pF

Output capacitance Coss f=1MHz - 95 118
Reverse transfer capacitance Crss - 45 67
Turn-on delay time td(on) VDD=15V, VGS=4.5V, - 5.4 8.1 ns
Rise time tr ID=1.44 A, RG=15W - 9.9 15
Turn-off delay time td(off) - 27 41
Fall time tf - 19 28

Gate Charge Characteristics

Gate to source charge Q gs VDD =24V, ID =1.8A - 0.9 1.1 nC
Gate to drain charge Q gd - 5.6 8.4
Gate charge total Qg VDD =24V, ID =1.8A, - 14 17
VGS =0 to 10V

Gate plateau voltage V(plateau) VDD =24V, ID = 1.8 A - 3.1 3.8 V

Reverse Diode
Inverse diode continuous IS TA=25C - - 1.8 A
forward current
Inv. diode direct current, pulsed ISM - - 7.2
Inverse diode forward voltage VSD VGS=0, IF = IS - 0.84 1.3 V
Reverse recovery time trr VR=25V, I F=lS , - 36 45 ns
Reverse recovery charge Qrr diF/dt=100A/s - 38 48 nC

Page 3 2007-02-07
 Rev 1.3 BSP295

1 Power dissipation 2 Drain current

Ptot = f (TA) ID = f (TA)
parameter: VGS 10 V
BSP295 BSP295
1.9 1.9
W A

1.6 1.6

1.4 1.4
P tot

1.2 1.2

ID
1 1

0.8 0.8

0.6 0.6

0.4 0.4

0.2 0.2

0 0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TA TA

3 Safe operating area 4 Transient thermal impedance

ID = f ( VDS ) ZthJA = f (tp )
parameter : D = 0 , TA = 25 C parameter : D = tp /T
10 1 BSP295
tp = 150.0s 10 2 BSP295

/ID
S
VD K/W
A =
o n)
S(
RD
1 ms 10 1
Z thJA

0
10
ID

10 ms

10 0
D = 0.50
0.20
-1 0.10
10
single pulse 0.05
10 -1
0.02
DC 0.01

10 -2 0 1 2
10 -2 -5 -4 -3 -2 -1 0 1 2 4
10 10 V 10 10 10 10 10 10 10 10 10 s 10
VDS tp

Page 4 2007-02-07
 Rev 1.3 BSP295

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS) RDS(on) = f (ID)
parameter: Tj = 25 C, VGS parameter: Tj = 25 C, VGS
3.6 1.8
3V 3.4V
A 5V
6V 4.2V W 2.4V 2.8V 3.8V4.2V

7V 5V
3 10V 6V
1.4 7V
2.7

R DS(on)
10V
3.8V 1.2
2.4
ID

2.1
1
1.8
3.4V
0.8
1.5
3V
1.2 0.6

0.9 2.8V 0.4

0.6
2.4V 0.2
0.3

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.6 1.2 1.8 2.4 A 3.6
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID = f ( VGS ); VDS 2 x ID x RDS(on)max gfs = f(ID)
parameter: Tj = 25 C parameter: Tj = 25 C
2.5 2.5

A S
gfs
ID

1.5 1.5

1 1

0.5 0.5

0 0
0 0.5 1 1.5 2 2.5 3 V 4 0 0.6 1.2 1.8 2.4 V 3.6
VGS ID

Page 5 2007-02-07
 Rev 1.3 BSP295

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj ) VGS(th) = f (Tj )
parameter : ID = 1.8 A, VGS = 10 V parameter: VGS = VDS ; ID = 1 mA
BSP295
2.2
W
0.75
V
98%

1.8
0.6
R DS(on)

V GS(th)
0.55 1.6
0.5 typ.
1.4
0.45
0.4 1.2

0.35 98% 1
0.3 2%
0.8
0.25
typ
0.2 0.6

0.15
0.4
0.1
0.2
0.05
0 0
-60 -20 20 60 100 C 180 -60 -20 20 60 100 C 160
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD)
parameter: VGS =0, f=1 MHz, Tj = 25 C parameter: Tj
3
10 10 1 BSP295

A
Ciss
pF

10 0
Coss
IF
C

2
10
Crss

10 -1
Tj = 25 C typ
Tj = 150 C typ
Tj = 25 C (98%)
Tj = 150 C (98%)

1
10 10 -2
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

Page 6 2007-02-07
 Rev 1.3 BSP295

13 Typ. avalanche energy 14 Typ. gate charge

EAS = f (Tj) VGS = f (QG ); parameter: VDS ,
par.: ID = 3.9 A, VDD = 25 V, RGS = 25 W ID = 1.8 A pulsed, Tj = 25 C
BSP295
60 16

V
mJ

12

V GS
E AS

40
10

30 8

6
20
0.2 VDS max
4
0.5 VDS max
10
2 0.8 VDS max

0 0
20 40 60 80 100 120 C 160 0 4 8 12 16 nC 24
Tj QG

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

BSP295
60
V

57
V (BR)DSS

56
55
54
53
52
51
50
49
48
47
46
45
-60 -20 20 60 100 C 180
Tj

Page 7 2007-02-07
 Rev 1.3 BSP295

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 8 2007-02-07