StrongIRFET

IRF200B211
Application HEXFET Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications D VDSS 200V
Battery powered circuits
RDS(on) typ. 135m
Half-bridge and full-bridge topologies
Synchronous rectifier applications G
max 170m
Resonant mode power supplies
S
DC/DC and AC/DC converters ID (Silicon Limited) 12A
DC/AC Inverters

Benefits D
S
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G
Fully Characterized Capacitance and Avalanche SOA
TO-220AB
Enhanced body diode dV/dt and dI/dt Capability
IRF200B211
Lead-Free*RoHS Compliant, Halogen-Free

G D S
Gate Drain Source

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF200B211 TO-220 Tube 50 IRF200B211

500 14
RDS(on), Drain-to -Source On Resistance (m )

ID = 7.2A
450 12

400
10
ID, Drain Current (A)

350
T J = 125C 8
300
6
250
4
200
T J = 25C
150 2

100 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
T C , Case Temperature (C)
VGS, Gate -to -Source Voltage (V)

Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature

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IRF200B211
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 12
ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 9.0 A
IDM Pulsed Drain Current 34
PD @TC = 25C Maximum Power Dissipation 80 W
Linear Derating Factor 0.53 W/C
VGS Gate-to-Source Voltage 20 V
TJ Operating Junction and
-55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm)

Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 88
EAS (Thermally limited) Single Pulse Avalanche Energy 72 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value 98
IAR Avalanche Current A
See Fig 15, 16, 23a, 23b
EAR Repetitive Avalanche Energy mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case 1.88
RCS Case-to-Sink, Flat Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

Static @ TJ = 25C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.21 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 135 170 m VGS = 10V, ID = 7.2A
VGS(th) Gate Threshold Voltage 3.0 4.9 V VDS = VGS, ID = 50A
20 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V,VGS = 0V,TJ =125C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
RG Gate Resistance 2.7

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.
ISD 7.2A, di/dt 1184A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90C.
Limited by TJmax, starting TJ = 25C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V.
This value determined from sample failure population, starting TJ = 25C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.

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IRF200B211
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 13 S VDS = 50V, ID = 7.2A
Qg Total Gate Charge 15.3 23 ID = 7.2A
Qgs Gate-to-Source Charge 5.1 VDS = 100V
nC
Qgd Gate-to-Drain Charge 5.6 VGS = 10V
Qsync Total Gate Charge Sync. (Qg Qgd) 10.2
td(on) Turn-On Delay Time 6.5 VDD = 130V
tr Rise Time 9.5 ID = 7.2A
ns
td(off) Turn-Off Delay Time 11.3 RG= 2.7
tf Fall Time 6.5 VGS = 10V
Ciss Input Capacitance 790 VGS = 0V
Coss Output Capacitance 62 VDS = 50V
Crss Reverse Transfer Capacitance 21 = 1.0MHz, See Fig.TBD
pF
Effective Output Capacitance
Coss eff.(ER) 66 VGS = 0V, VDS = 0V to 160V
(Energy Related)
Coss eff.(TR) Output Capacitance (Time Related) 83 VGS = 0V, VDS = 0V to 160V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol D

IS 12
(Body Diode) showing the
A G
Pulsed Source Current integral reverse
ISM 34
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 7.2A,VGS = 0V

dv/dt Peak Diode Recovery dv/dt 32.5 V/ns TJ =175C,IS = 7.2A,VDS = 200V
68 TJ = 25C VDD = 100V
trr Reverse Recovery Time ns
83 TJ = 125C IF = 7.2A,
195 TJ = 25C di/dt = 100A/s
Qrr Reverse Recovery Charge nC
280 TJ = 125C
IRRM Reverse Recovery Current 4.3 A TJ = 25C

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IRF200B211
100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V 6.0V
10 5.5V 5.5V
5.25V 5.25V
BOTTOM 5.0V 10 BOTTOM 5.0V

1 5.0V

1
0.1
5.0V

60s PULSE WIDTH 60s PULSE WIDTH

Tj = 25C Tj = 175C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics

100 3.0

RDS(on) , Drain-to-Source On Resistance

ID = 7.2A
2.5 VGS = 10V
ID, Drain-to-Source Current (A)

10
2.0
(Normalized)

1 1.5

1.0
0.1
0.5

0.01 0.0
2 3 4 5 6 7 8 -60 -20 20 60 100 140 180
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)

Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

10000 14
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED ID = 7.2A
Crss = C gd 12
VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd VDS= 160V

10 VDS= 100V
C, Capacitance (pF)

1000 VDS= 40V

Ciss
8

6
100 Coss
4

Crss
2

10 0
1 10 100 1000 0 4 8 12 16 20 24
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage

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IRF200B211
100 100
OPERATION IN THIS AREA LIMITED BY RDS (on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100sec
10
1msec
10

1
T J = 175C T J = 25C
10msec
1
DC
0.1
Tc = 25C
Tj = 175C
VGS = 0V Single Pulse
0.1 0.01
0.2 0.4 0.6 0.8 1.0 1.2 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

250 1.4
Id = 1.0mA
1.2

1.0
225
Energy (J) 0.8

0.6

200
0.4

0.2

175 0.0
-60 -40 -20 0 20 40 60 80 100120140160180 0 20 40 60 80 100 120 140 160 180 200

T J , Temperature ( C ) VDS, Drain-to-Source Voltage (V)

Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy

800
RDS(on), Drain-to -Source On Resistance ( m )

VGS = 6.0V
700
VGS = 7.0V
VGS = 8.0V
600 VGS = 10V

500

400

300

200

100
0 10 20 30 40
ID, Drain Current (A)

Fig 13. Typical On Resistance vs. Drain Current

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IRF200B211
10

Thermal Response ( Z thJC ) C/W

1 D = 0.50

0.20
0.10
0.1 0.05
0.02
0.01

0.01
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150C and
Tstart = 25C (Single Pulse)
Avalanche Current (A)

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width

100
Notes on Repetitive Avalanche Curves , Figures 15, 16:
TOP Single Pulse
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle 1.Avalanche failures assumption:
80 ID = 7.2A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of Tjmax. This is validated for every

part type.
60 2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
40 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
20 6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25C in Figure 14, 15).
0 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
25 50 75 100 125 150 175
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3BVIav) = T/ ZthJC
Iav = 2T/ [1.3BVZth]
EAS (AR) = PD (ave)tav
Fig 16. Maximum Avalanche Energy vs. Temperature

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IRF200B211
6.0 25
VGS(th) , Gate threshold Voltage (V) IF = 4.8A
V R = 100V
5.0 20
TJ = 25C
TJ = 125C
4.0 15

IRRM (A)
3.0 10

ID = 50A
2.0 ID = 100A 5
ID = 250A
ID = 1.0mA
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000
T J , Temperature ( C ) diF /dt (A/s)

Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
25 700
IF = 7.2A IF = 4.8A
V R = 100V 600 V R = 100V
20 TJ = 25C
TJ = 25C
500 TJ = 125C
TJ = 125C
15
QRR (nC)
400
IRRM (A)

300
10

200
5
100

0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
diF /dt (A/s) diF /dt (A/s)

Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt

700
IF = 7.2A
600 V R = 100V
TJ = 25C
500 TJ = 125C
QRR (nC)

400

300

200

100

0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/s)

Fig 21. Typical Stored Charge vs. dif/dt

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IRF200B211

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

V(BR)DSS

15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS

Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds

Vgs

VDD
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform

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IRF200B211
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
YEA R 0 = 2000
N o t e : "P " in a s s e m b ly lin e p o s it io n ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRF200B211

Qualification Information
Industrial
Qualification Level (per JEDEC JESD47F)

Moisture Sensitivity Level TO-220 N/A

RoHS Compliant Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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