Você está na página 1de 61

CHAPTER 1: SEMICONDUCTOR DIODES 7.

How many orbiting electrons does the


germanium atom have?
1. How many terminals does a diode
have? A) 4
B) 14
A) 1
C) 32
B) 2
D) 41
C) 3
D) 4
8.How many valence electrons does a
silicon atom have?
2. What is the resistor value of an ideal
diode in the region of conduction? A) 1
B) 2
A) 0
C) 3
B) 5 k
D) 4
C) Undefined
D) Infinity
9.One eV is equal to _____ J.
3. What is the state of an ideal diode in A) 6.02 1023
the region of nonconduction? B) 1.6 1019

A) An open circuit C) 6.25 1018


B) A short circuit D) 1.66 1024

C) Unpredictable 10. Which of the following elements is


D) Undefined
most frequently used for doping pure Ge
or Si?
4.The diode _____.
A) Boron
A) is the simplest of
B) Gallium
semiconductor devices
C) Indium
B) has characteristics that closely
match those of a simple switch D) All of the above

C) is a two-terminal device 11.The diffused impurities with _____


D) All of the above
valence electrons are called donor atoms.
5.The ideal diode is a(n) _____ circuit in the A) 4
region of nonconduction. B) 3

A) open C) 5

B) short D) 0
6.Which of the following is an atom 12.In what state is a silicon diode if the
composed of? voltage drop across it is about 0.7 V?

A) Electrons A) No bias
B) Protons B) Forward bias
C) Neutrons C) Reverse bias
D) All of the above D) Zener region
13.What unit is used to represent the 18. Refer to Figure 1.27. Calculate the
level of a diode forward current IF? dynamic resistance rd of a diode having
ID = 27.5 mA.
A) pA
B) nA A) 0
C) A B) 2

D) mA C) 5

14.Which of the following ratings is true? D) 26


19. Determining rd to a high degree of
A) Si diodes have higher PIV and
accuracy from a characteristic curve is
narrower temperature ranges than
very accurate.
Ge diodes.
B) Si diodes have higher PIV and A) True
wider temperature ranges than Ge B) False
diodes. 20. The _____ diode model is employed
C) Si diodes have lower PIV and most frequently in the analysis of
narrower temperature ranges than electronic systems.
Ge diodes.
A) ideal device
D) Si diodes have lower PIV and
B) simplified
wider temperature ranges than Ge
diodes. C) piecewise-linear

15.It is not uncommon for a germanium 21.Calculate the power dissipation of a


diode with an Is in the order of 12 A at diode having ID = 40 mA.
25C to have leakage current of 0.1 mA at A) 28 mW
a temperature of 100C.
B) 28 W
A) True C) 280 mW
B) False
D) Undefined
16. Calculate static resistance RD of a 22. Which capacitance dominates in the
diode having ID = 30 mA and VD = 0.75 V. reverse-bias region?
A) 25 A) depletion
B) 40
B) conversion
C) 0.04
C) 40 Diffusion
D) 0.025
D) 140 None of the above
17. Calculate ID if RD = 30 and VD = 0.84 23. Which capacitance dominates in the
V. forward-bias region?
A) 28 mA A) Diffusion
B) 0.028 mA
B) Transition
C) 2.8 A
C) Depletion
D) 280 A
D) None of the above
24. At what kind of operating frequency 29. Determine the nominal voltage for the
diffusion or transition is a capacitor Zener diode at a temperature of 120 C if
represented in parallel with the ideal the nominal voltage is 5.1 volts at 25 C
diode? and the temperature coefficient is
0.05%/ C.
A) Low frequency
B) Moderate frequency A) 4.6 V
C) Mid frequency B) 4.86 V

D) Very high frequency C) 5.1 V

25. What is the value of the transition D) 5.34 V


capacitance for a silicon diode when VD = 30. Calculate the temperature coefficient
0? in %/ C of a 10-V nominal Zener diode at
25 C if the nominal voltage is 10.2 V at
A) 1 pF
100 C.
B) 3 pF
A) 0.0238
C) 5 pF
B) 0.0251
D) 10 pF
C) 0.0267
26. Which of the following devices can
check the condition of a semiconductor D) 0.0321
diode? 31. In which of the following color(s) is
(are) LEDs presently available?
A) Digital display meter (DDM)
B) Multimeter A) Yellow
C) Curve tracer B) White

D) All of the above C) Orange

27. What does a high resistance reading in D) All of the above


both forward- and reverse-bias directions 32.What is the maximum power rating for
indicate? LEDs?
A) A good diode A) 150 mW
B) An open diode B) 500 mW
C) A shorted diode C) 1 W
D) A defective ohmmeter D) 10 W
28. The condition of a semiconductor 33. In which of the following is the light
diode can be determined quickly using a intensity measured?
_____.
A) Candela
A) DDM B) Efficacy
B) VOM C) Flux
C) curve tracer D) Illumination
D) Any of the above 34. What is the range of the operating
voltage level for LEDs?
A) 512 mV B) substantial decrease
B) 1.73.3 V C) slight decrease
C) 512 V D) no change
D) 2025 V 5. Ge and Si have a(n) _____ coefficient in
35. In general, LEDs operate at voltage forward bias.
levels from _____ V to _____ V. A) positive temperature
A) 1.0, 3.0 B) negative temperature
B) 1.7, 3.3 C) absolute temperature
C) 0.5, 4.0 D) temperature free
D) None of the above 6. Any electron that has left its parent
atom has _____ energy state relative to any
electron in the atomic structure.
FILL IN THE BLANK QUESTIONS
A) the same
1. A(n) _____ is the simplest of B) a lower
semiconductor devices. C) a higher
A) diode D) an undefined

B) transistor 7. Introducing those impurity elements


C) operational amplifier
that have _____ valence electrons creates
the n-type material.
D) SCR
2. The term _____ is often used when A) 0
comparing the resistance level of B) 3
materials. C) 4

A) permittivity D) 5

B) inductivity 8. In n-type material the _____ is called the


C) conductivity
majority carrier.
D) resistivity A) electron
3. In the atomic lattice the _____ and _____ B) hole
form the nucleus. C) proton

A) electrons, neutrons D) neutron

B) electrons, protons 9. The diffused impurities with _____


C) neutrons, protons
valence electrons are called acceptor
atoms.
D) None of the above
4. An increase in temperature of a A) 0
semiconductor can result in a _____ in the B) 3
number of free electrons in the material. C) 4
A) substantial increase D) 5
10. The reverse-saturation current level is B) in parallel
typically measured in _____. C) in parallel-series
A) pA D) None of the above
B) A 16. The _____ the current through a diode,
C) mA the _____ the dc resistance level.
D) A A) higher, lower
11. The depletion width _____ in the B) lower, lower
forward bias, which results in having a C) lower, higher
majority flow across the junction.
D) higher, higher
A) widens 17. Varying the _____ can control the
B) remains unchanged location of the Zener region.
C) shrinks A) forward current
D) widens and shrinks B) doping levels
alternatively
C) forward voltage
12. The forward characteristics curve of a
D) dc resistance
diode grows in _____ form.
18. The test current in a Zener diode IZT
A) linear is the current defined by the _____ power
B) exponential level.
C) logarithmic A) 0.25
D) sinusoidal B) 0.5
13. The potential at which the C) 0.75
characteristics curve vertical rise occurs
D) 1.00
is commonly referred to as the _____.
19. The heavier the current in a Zener
A) offset diode in reverse bias, _____ dynamic
B) threshold resistance value.
C) firing potential A) the more the
D) All of the above B) the less the
14. The reverse saturation current Is will C) there is substantially more
just _____ in magnitude for every 10 C
D) there is no change in the
increase in temperature.
20. The intensity of LED is greatest at _____
A) double degrees and the least at _____ degrees.
B) remain the same
A) 0, 90
C) halve
B) 45, 90
D) triple
C) 0, 45
15. Diodes are connected _____ to increase
D) 90, 180
the current-carrying capacity.
21. The temperature coefficient can be
A) in series _____ for different Zener levels.
A) positive
B) negative
C) zero
D) All of the above
22. The reverse recovery time of most
commercial switching diodes is in the
range of _____.
A) picoseconds
B) a few nanoseconds
C) several microseconds
D) milliseconds
23. The ac resistance of a diode is the _____ A) 0 mA
of the characteristic curve at the Q-point B) 4.3 mA
of operation. C) 5 mA
A) reciprocal of the slope D) 10 mA
B) slope 2. In a particular problem, which mode
C) midpoint
has the highest level of IDQ?
D) average value
A) Ideal
24. Generally the value of ac resistance is
B) Approximate equivalent
_____ the value of dc resistance at the same
operating point. C) Exact mode using
characteristic curve
A) smaller than
D) None of the above
B) larger than
3. Which diode(s) has (have) a zero level
C) the same as current and voltage drop in the ideal
D) unrelated to model?
25. The reverse-bias current _____ with the A) Si
increase of temperature. B) Ge
A) decreases C) Both Si and Ge
B) increases D) Neither Si nor Ge
C) remains the same 4. Determine the current level if E = 15 V
D) None of the above and R = 3 k.

CHAPTER 2: DIODE APPLICATIONS

1. Use the information provided here to


determine the value of IDQ.
A) 0 A A) 0 mA
B) 4.76 mA B) 1.893 mA
C) 5 mA C) 2.036 mA
D) 5 A D) 2.143 mA
5. Determine the voltage across the 8. Determine V2.
resistor.

A) 0 V
B) 0.09 V A) 3.201 V
C) 0.2 V B) 0 V
D) 0.44 V C) 4.3 V
6. Determine the value of the load D) 1.371 V
resistor.
9. A diode is in the "_____" state if the
current established by the applied
sources is such that its direction matches
that of the arrow in the diode symbol, and
VD 0.7 V for Si and VD 0.3 V for Ge.
A) off
B) on
C) neutral
A) RL = 5 k D) quiescent
B) RL = 5.5 k 10. An open circuit can have any voltage
C) RL = 6 k across its terminals, but the current is
always _____.
D) None of the above
A) 5 A
7. Determine ID.
B) 0 A
C) 1 A
D)
11. A short circuit has a _____ drop across
its terminals, and the current is limited
only by the surrounding network.
A) 5 V
B) 0 V
C) 1 V D) 3.571 mA
D) 15. Determine the current through each
12. Determine ID2. diode if E1 = E2 = 0 V.

A) 29.40 mA
B) 30.30 mA
C) 14.70 mA
D) None of the above
A) 4.65 mA
13. Determine ID1.
B) 9.3 mA
C) 18.6 mA
D) 0.7 mA
16. Determine Vo if E1 = E2 = 10 V.

A) 0 mA
B) 29.40 mA
C) 14.70 mA
D) 14.09 mA
14. Determine ID2.

A) 9.3 V
B) 10 V
C) 10 V
D) 0 V
17. What is the logic function of this
A) 6.061 mA circuit?
B) 0.7 mA
C) 3.393 mA
19. What best describes the circuit?

A) Full-wave rectifier
B) Half-wave rectifier
A) Positive logic AND gate C) Clipper
B) Positive logic OR gate D) Clamper
C) Negative logic AND gate 20. Determine the peak value of the
D) Negative logic OR gate current through the load resistor.
18. What is the logic function of this
circuit?

A) 2.325 mA
B) 5 mA
C) 1.25 mA
D) 0 mA
A) Positive logic AND gate 21. Determine the average value of the
B) Positive logic OR gate current through the load resistor.
C) Negative logic AND gate
D) Negative logic OR gate
A) 2.5 mA 25. Determine the peak for both half
B) 0 mA cycles of the output waveform.
C) 1.37 mA
D) 1.479 mA
22. What best describes the circuit?

A) 16 V, 4 V
B) 16 V, 4 V
C) 16 V, 4 V
D) 16 V, 4 V
26. What best describes the circuit?
A) Full-wave rectifier
B) Half-wave rectifier
C) Clipper
D) Clamper
23. List the categories of clippers.

A) Series
B) Parallel A) Full-wave rectifier
C) Series and parallel B) Half-wave rectifier
D) None of the above C) Clipper
24. Determine the peak value of the D) Clamper
output waveform. 27. Determine the total discharge time for
the capacitor in a clamper having C = 0.01
F and R = 500 k.
A) 5 ms
B) 25 ms
C) 2.5 ms
D) 50 ms

A) 25 V
B) 15 V
C) 25 V
D) 15 V
28. Calculate IL and IZ.

A) VZ
B) IZM
C) IZ
A) 2 mA, 0 mA
D) None of the above
B) 4 mA, 2 mA
32. What is the peak inverse voltage
C) 2 mA, 2 mA
across each diode in a voltage doubler?
D) 2 mA, 4 mA
A) Vm
29. With this Zener diode in its "on state,"
B) 2Vm
what is the level of IZ for the maximum
load resistance? C) 0.5Vm
D) 0.25Vm
33. What is the voltage measured from
the negative terminal of C4 to the negative
terminal of the transformer?

A) 0 mA
B) Undefined
C) Equal to IRL
D) IZM
30. In a voltage regulator network with
fixed RL and R, what element dictates the A) 10 V
minimum level of source voltage?
B) 20 V
A) VZ
C) 10 V
B) IZ
D) 20 V
C) IZM
34. In a voltage-multiplier circuit, the
D) None of the above number of diodes is directly proportional
31. Which element dictates the maximum to the multiplicative voltage factor.
level of source voltage?
A) True D) None of the above
B) False 5. The x-intercept of the load line with the
35. Rectifiers are commonly used in characteristic curve is determined by the
battery chargers. _____.
A) load resistor
A) True B) diode
B) False C) source voltage and the load
resistor
D) source voltage
Fill-in-the-blanks Questions
6. The source voltage must be _____ the
1. The intersection of the load line with voltage drop across the diode to conduct
the characteristic curve determines the the diode.
_____ of the system. A) larger than
A) point of operation B) smaller than

B) load-line analysis C) the same as


C) characteristic curve D) None of the above
D) forward bias 7. As the load resistor increases, the slope
2. The slope of the load line depends on of the dc load line and the levels of diode
the _____. current _____.
A) increase

A) type of the diode used B) decrease

B) characteristic curve C) remain unchanged

C) load resistor D) are unpredictable


D) source voltage 8. A germanium diode is approximated by
3. The load line is defined by the _____ and _____ equivalent for voltages less than 0.3
a characteristic curve is defined by the V.
_____. A) a short circuit
B) a series circuit
A) quiescent point, device C) a parallel circuit
B) device, network D) an open circuit
C) network, device 9. A diode is in the _____ state if the
D) None of the above current established by the applied
4. The quiescent point (Q-point) is sources is such that its direction matches
defined by a(n) _____. that of the arrow in the diode symbol and
VD > 0.7 V.
A) off
A) ac network
B) reverse bias
B) dc network
C) on
C) ac and dc network
D) transition
10. The combination of a short circuit in B) 0, 0
series with an open circuit always results C) 0.7, 0
in a(n) _____ circuit.
D) 0.7, 0.3
A) open
16. A clamping network must have _____.
B) short
C) neither short nor open A) a capacitor
D) unknown B) a diode
11. The absence of the Si or Ge and VD C) a resistive element
label on a diode denotes _____ notation.
D) All of the above
A) approximate model
17. The ratio of the total swing of the
B) ideal model output of a clamper to its input total
C) exact model swing is _____.
D) None of the above A) 1
12. The process of removing one-half the B) 2
input signal to establish a dc level is called C) 0.5
_____.
D) 0
A) rectifier
18. For the "off" state of a Zener diode, the
B) full-wave rectifier voltage across the diode should be _____.
C) half-wave rectifier A) greater than VZ
D) filtering B) zero
13. The dc voltage level of a silicon diode C) less than VZ but greater than
is _____ its ideal model. zero
D) None of the above
A) smaller than
19. Once the Zener diode is in the "on"
B) larger than state, VZ is always _____ VL.
C) the same as
D) None of the above
14. The PIV rating of the diodes in a full-
wave rectifier must be larger than _____
Vm.
A) 0.318
B) 0.636
C) 2
D) 1
A) larger than
15. For the ideal diode the transition
between states will occur at the point on B) smaller than
the characteristic curve when VD = _____ V C) the same as
and ID = _____ A. D) None of the above
A) 0.3, 0
20. Zener diodes are used in regulator
networks to _____.

A) generate voltage
B) consume power
C) maintain a fixed voltage across
the load resistor
D) protect the load
21. With the Zener diode in the "on" state,
increasing IL will _____ IZ and _____IR.
A) negative, 2Vm, positive
B) positive, Vm, negative
C) positive, 2Vm, negative
D) negative, Vm, positive
24. The full-wave voltage doubler
provides _____ filtering action than (as) the
half-wave voltage doubler.
A) better
B) poorer
A) decrease, increase C) the same
B) increase, decrease D) None of the above
C) decrease, keep the same level 25. In this voltage multiplier, measuring
of from the top of the transformer winding
D) increase, keep the same level will provide _____ multiples of Vm at the
of output, whereas measuring the output
voltage from the bottom of the
22. A Zener diode is in a _____ impedance
transformer will provide _____ multiples of
region in the forward bias while it has a
the peak Vm.
_____ impedance region in the reverse
bias.
A) very large, low
B) very large, very large
C) low, low
D) low, very large
23. In a half-wave voltage doubler, the
voltage across output capacitor C2 drops
across the load during the _____ half cycle
and the capacitor is recharged up to _____
during the _____ half cycle.
A) odd, even
B) even, odd
C) odd, odd D) nnp, pnp
D) even, even 6. Transistors are _____-terminal devices.

A) 2
CHAPTER 3: BJT DEVICES B) 3

1. In what decade was the first transistor C) 4


created? D) 5
7. How many carriers participate in the
A) 1930s injection process of a unipolar device?
B) 1940s A) 1
C) 1950s B) 2
D) 1960s C) 0
2. How many layers of material does a D) 3
transistor have? 8. Which component of the collector
current IC is called the leakage current?
A) 1 A) Majority
B) 2 B) Independent
C) 3 C) Minority
D) 4 D) None of the above
3. What is the ratio of the total width to 9. For a properly biased pnp transistor, let
that of the center layer for a transistor? IC = 10 mA and IE = 10.2 mA. What is the
A) 1:15 level of IB?
B) 1:150 A) 0.2 A
C) 15:1 B) 200 mA
D) 150:1 C) 200 A
4. Which of the following is (are) the D) 20.2 mA
terminal(s) of a transistor? 10. Calculate minority current ICO if IC =
20.002 mA and IC majority = 20 mA.
A) Emitter A) 2 A
B) Base B) 0.002 A
C) Collector C) 2 nA
D) All of the above D) 2 pA
5. List the types of bipolar junction 11. Which of the following regions is (are)
transistors. part of the output characteristics of a
transistor?
A) ppn, npn A) Active
B) pnp, npn B) Cutoff
C) npp, ppn C) Saturation
D) All of the above B) Current
12. In which region are both the collector- C) Power
base and base-emitter junctions forward- D) All of the above
biased?
18. Use this table of collector
A) Active characteristics to calculate ac at VCE = 15
B) Cutoff V and IB = 30 A.
C) Saturation
D) All of the above
13. How much is the base-to-emitter
voltage of a transistor in the "on" state?
A) 0 V
B) 0.7 V
C) 0.7 mV
D) Undefined
14. In the active region, while the
collector-base junction is _____-biased, the
base-emitter is _____-biased.
A) forward, forward A) 100
B) forward, reverse B) 106
C) reverse, forward C) 50
D) reverse, reverse D) 400
15. What is dc equal to? 19. Calculate dc at VCE = 15 V and IB = 30
A.
A) IB / IE
B) IC / IE
C) IC / IB
D) None of the above
16. What are the ranges of the ac input
and output resistance for a common-base
configuration?
A) 10 100 , 50 k 1 M
B) 50 k 1 M, 10 100
C) 10 100 k, 50 1 k
D) None of the above
17. For what kind of amplifications can
the active region of the common-emitter
configuration be used?
A) Voltage
A) 100
B) 116
C) 50
D) 110
20. Which of the following configurations
can a transistor set up?

A) Common-base
B) Common-emitter
C) Common-collector
D) All of the above
21. Determine the value of when =
100.

A) 1.01
B) 101
C) 0.99 A) 2
D) Cannot be solved with the B) 5
information provided
C) 7
22. What is the most frequently
D) 10
encountered transistor configuration?
24. dc = ________
A) Common-base
A) IB / IE
B) Common-collector
B) IC / IE
C) Common-emitter
C) IC / IB
D) Emitter-collector
D) None of the above
23. dc for this set of collector
characteristics is within _____ percent of 25. What is (are) the component(s) of
ac. most specification sheets provided by the
manufacturer?
A) Maximum ratings
B) Thermal characteristics
C) Electrical characteristics
D) All of the above
26. What is (are) the component(s) of
electrical characteristics on the
specification sheets?
A) On
B) Off
C) Small-signal characteristics
D) All of the above
27. Most specification sheets are broken
down into _____.

A) maximum ratings
B) thermal characteristics
C) electrical characteristics
D) All of the above
28. An example of a pnp silicon transistor
is a 2N4123.

A) True
B) False
29. Which of the following equipment can
check the condition of a transistor?
A) Current tracer A) 200
B) Digital display meter (DDM) B) 180
C) Ohmmeter (VOM) C) 220
D) All of the above D) None of the above
30. Which of the following can be 32. What range of resistor values would
obtained from the last scale factor of a you get when checking a transistor for
curve tracer? forward- and reverse-biased conditions
A) hFE by an ohmmeter?
B) dc A) 100 to a few k, exceeding
100 k
C) ac
B) Exceeding 100 k, 100 to a
D) ac
few k
31. Calculate ac for IC = 15 mA and VCE = 5
C) Exceeding 100 k, exceeding
V.
100 k
D) 100 to a few k, 100 to a
few k
33. What does a reading of a large or
small resistance in forward- and reverse-
biased conditions indicate when checking
a transistor using an ohmmeter?
A) Faulty device
B) Good device
C) Bad ohmmeter
D) None of the above
34. A transistor can be checked using a(n) 4. The lower doping level _____ the
_____. conductivity and _____ the resistivity of the
material.
A) curve tracer A) increases, decreases
B) digital meter B) increases, increases
C) ohmmeter C) decreases, decreases
D) Any of the above D) decreases, increases
35. How many individual pnp silicon 5. The term bipolar reflects the fact that
transistors can be housed in a 14-pin _____ and _____ participate in the injection
plastic dual-in-line package? process into the oppositely polarized
A) 4 material.
B) 7 A) holes, neutrons

C) 10 B) holes, electrons

D) 14 C) neutrons, electrons
D) None of the above
6. One p-n junction of a transistor is _____-
Fill-in-the-blanks Questions
biased and the other one is _____-biased in
the active region.
1. All amplifiers should have at least _____
A) reverse, reverse
terminals with _____ terminal(s)
controlling the flow between _____ other B) forward, forward
terminal(s). C) reverse, forward
A) 2, 1, 1 D) None of the above
B) 3, 1, 2 7. The magnitude of the base current is
C) 3, 2, 1 typically on the order of _____ as compared
D) 3, 0, 3
to _____ for the emitter.
A) A, A
2. The outer layers of a transistor are _____
the sandwiched layer. B) A, mA
C) mA, A
A) much smaller than D) mA, mA
B) the same as 8. The base current is the _____ of the
C) much larger than emitter and collector currents.
D) None of the above
3. The doping of the sandwiched layer is A) sum
_____ that of the outer layers. B) difference
A) considerably less than C) product
B) the same as D) None of the above
C) considerably more than 9. The _____ region is the region normally
D) None of the above
employed for linear (undistorted)
amplifiers.
A) active A) ac
B) cutoff B) dc
C) saturation C) ac and dc
D) All of the above D) None of the above
10. In the cutoff region the collector-base 15. The common-collector configuration
junction is _____-biased and the base- has a _____ input impedance and a _____
emitter junction is _____-biased for a output impedance.
transistor. A) low, high
A) reverse, forward B) high, low
B) forward, reverse C) high, high
C) reverse, reverse D) low, low
D) forward, forward 16. The active region of a transistor is
11. In the saturation region the collector- bounded by the _____.
base junction is _____-biased and the base-
emitter junction is _____-biased for a A) cutoff region
transistor.
B) saturation region
A) reverse, forward
C) power dissipation curve
B) forward, reverse
D) All of the above
C) reverse, reverse
17. The "on" and "off" characteristics
D) forward, forward refer to _____ limits while the small-signal
12. For practical transistors the level of characteristics indicate the parameters of
alpha typically extends from _____ to _____ importance to _____ operation.
with most approaching the higher end of A) ac, dc
the range.
B) dc, ac
A) 0.0, 1
C) ac, dc and ac
B) 0.90, 0.998
D) dc and ac, dc
C) 50, 400
18. The step function (per step) of a curve
D) None of the above tracer reveals the scale for _____.
13. Typical values of voltage amplification A) collector current IC
for the common-base configurations vary
B) VCE voltage
from _____ and the current gain is always
_____ . C) base current IB

A) less than 1, 50 to 300 D) All of the above

B) 50 to 300, larger than 1 19. The level of _____ is determined and


displayed by advanced digital meters.
C) 50 to 300, less than 1
A) VCE
D) larger than 1, 50 to 300
B) IB
14. If a value of beta.gif is specified for a
particular transistor configuration it will C) IC
normally be used for _____ calculations. D) dc
20. The level of _____ is determined and C) nickel
displayed by advanced digital meters if D) All of the above
using diode-testing mode.
25. There is(are) _____ in the internal
A) VBE construction of a TO-92 package.
B) IC A) gold bond wires
C) IB B) a copper frame
D) IE C) epoxy encapsulation
21. When checking a transistor by D) All of the above
ohmmeter, a relatively _____ resistance is
displayed for a forward-biased junction
and _____ resistance for a reverse-biased CHAPTER 4: DC BIASING BJTs
junction.
A) low, very high 1. Which of the following currents is
B) low, low nearly equal to each other?
C) high, high A) IB and IC
D) high, very low B) IE and IC
22. An OL indication on an advanced C) IB and IE
digital meter indicates _____ while D) IB, IC, and IE
checking a transistor.
2. The ratio of which two currents is
A) forward bias
represented by ?
B) reverse bias
A) IC and IE
C) definitely a defective
transistor B) IC and IB

D) None of the above C) IE and IB

23. If the positive lead of an ohmmeter is D) None of the above


connected to the base and the negative 3. At what region of operation is the base-
lead to the emitter, a low resistance emitter junction forward biased and the
reading would indicate a _____ transistor base-collector junction reverse biased?
and a high resistance reading would
A) Saturation
indicate a _____ transistor.
B) Linear or active
A) npn, pnp
C) Cutoff
B) pnp, npn
D) None of the above
C) npn, npn
4. Calculate the approximate value of the
D) pnp, pnp
maximum power rating for the transistor
24. The leads of a transistor are typically represented by the output characteristics
made of _____. of Figure 4.1?
A) 250 mW
A) gold
B) 170 mW
B) aluminum
C) 50 mW
D) 0 mW 10. For what value of does the transistor
5. The cutoff region is defined by IB _____ 0 enter the saturation region?
A.
A) >
B) <
C)
D)
6. The saturation region is defined by
VCE _____ VCEsat.
A) >
B) <
C)
D)
7. For the BJT to operate in the active A) 20
(linear) region, the base-emitter junction
B) 50
must be _____-biased and the base-
collector junction must be _____-biased. C) 75
D) 116
A) forward, forward
11. Determine the reading on the meter
B) forward, reverse
when VCC = 20 V, RC = 5 k, and IC = 2 mA.
C) reverse, reverse
D) reverse, forward
8. For the BJT to operate in the saturation
region, the base-emitter junction must be
_____-biased and the base-collector
junction must be _____-biased.
A) forward, forward
B) forward, reverse
C) reverse, reverse
D) reverse, forward
9. Which of the following voltages must
have a negative level (value) in any npn
bias circuit?
A) VBE
B) VCE A) 10 V
C) VBC B) 10 V
D) None of the above C) 0.7 V
D) 20 V
12. Which of the following is assumed in 15. Calculate the value of VCEQ.
the approximate analysis of a voltage
divider circuit?
A) IB is essentially zero amperes.
B) R1 and R2 are considered to be
series elements.
C) RE 10R2
D) All of the above
13. It is desirable to design a bias circuit
that is independent of the transistor beta.
A) True
B) False
14. Calculate the voltage across the 91 k
resistor.
A) 8.78 V
B) 0 V
C) 7.86 V
D) 18 V
16. Calculate ICsat.

A) 18 V
B) 9.22 V
C) 3.23 V
D) None of the above

A) 35.29 mA
B) 5.45 mA
C) 1.86 mA
D) 4.72 mA
17. Calculate VCE. 19. Which of the following is (are) related
to an emitter-follower configuration?
A) The input and output signals
are in phase.
B) The voltage gain is slightly less
than 1.
C) Output is drawn from the
emitter terminal.
D) All of the above
20. Determine the values of VCB and IB for
this circuit.

A) 4.52 V
B) 4.52 V
C) 4.48 V
D) 4.48 V
18. Calculate VCE.

A) 1.4 V, 59.7 A
B) 1.4 V, 59.7 A
C) 9.3 V, 3.58 A
D) 9.3 V, 3.58 A

A) 4.52 V
B) 4.52 V
C) 9 V
D) 9 V
21. Calculate ETh for this network. information that is provided for this
circuit.

A) 12.12 V
A) True
B) 16.35 V
B) False
C) 3.65 V
24. In the case of this circuit, you must
D) 10 V
assume that VE = 0.1VCC in order to
22. Calculate Rsat if VCE = 0.3 V. calculate RC and RE.

A) 49.2
B) 49.2 k
C) 49.2 m
D) 49.2 M
23. You can select the values for the A) True
emitter and collector resistors from the B) False
25. Which of the following is (are) the 31. In a fixed-bias circuit, which one of the
application(s) of a transistor? stability factors overrides the other
factors?
A) Amplification of signal
B) Switching and control A) S(ICO)
C) Computer logic circuitry B) S(VBE)

D) All of the above C) S()

26. Calculate the storage time in a D) Undefined


transistor switching network if toff is 56 32. In a voltage-divider circuit, which one
ns, tf = 14 ns, and tr = 20 ns. of the stability factors has the least effect
on the device at very high temperature?
A) 70 ns
B) 42 ns A) S(ICO)
C) 36 ns B) S(VBE)

D) 34 ns C) S()

27. The total time required for the D) Undefined


transistor to switch from the "off" to the 33. Use this table to determine the change
"on" state is designated as ton and defined in IC from 25C to 175C for RB / RE = 250
as the delay time plus the time element. due to the S(ICO) stability factor. Assume
an emitter-bias configuration.
A) True
B) False
28. For an "on" transistor, the voltage
VBE should be in the neighborhood of 0.7
V.
A) True
B) False
29. For the typical transistor amplifier in
the active region, VCE is usually about _____
% to _____ % of VCC.
A) 140.34 nA
A) 10, 60
B) 140.34 A
B) 25, 75
C) 42.53 nA
C) 40, 90
D) 0.14034 nA
30. Which of the following is (are) a
stability factor? 34. Determine the change in IC from 25C
to 175C for the transistor defined in this
A) S(ICO) table for fixed-bias with RB = 240 k and
B) S(VBE) = 100 due to the S(VBE) stability factor.
C) S()
D) All of the above
3. For the dc analysis the network can be
isolated from the indicated ac levels by
replacing the capacitor with _____.
A) an open circuit equivalent
B) a short circuit equivalent
C) a source voltage
D) None of the above
4. In a fixed-bias circuit with a fixed
supply voltage VCC the selection of a _____
A) 145.8 A resistor sets the level of _____ current for
the operating point.
B) 145.8 nA
C) 145.8 A
A) collector, base
B) base, base
D) 145.8 nA
C) collector, collector
35. Determine ICQ at a temperature of
175 C if ICQ = 2 mA at 25 C for RB / RE = D) None of the above
20 due to the S() stability factor. 5. Changes in temperature will affect the
A) 2.417 mA level of _____.
B) 2.392 mA A) current gain
C) 2.25 mA B) leakage current ICEO
D) 2.58 mA C) both current gain and leakage
current ICEO
D) None of the above
Fill-in-the-blanks Questions
6. In a fixed-bias circuit, the magnitude of
IC is controlled by and therefore is a
1. By definition, quiescent means _____.
function of _____.
A) quiet
A) RB
B) still
B) RC
C) inactive
C)
D) All of the above
D) RB and
2. _____ should be considered in the
7. For a transistor operating in the
analysis or design of any electronic
saturation region, the collector current
amplifiers.
IC is at its _____ and the collector-emitter
A) dc voltage VCE is to the _____.
B) ac A) minimum, left of the VCEsat line
C) dc and ac B) minimum, right of the VCEsat line
D) None of the above C) maximum, left of the VCEsat line
D) maximum, right of the VCEsat line
8. The dc load line is determined solely by B) emitter-stabilized bias
the _____. C) voltage divider
A) base-emitter loop D) voltage feedback
B) collector-emitter loop 14. The saturation current of a transistor
C) base-collector loop used in a fixed-bias circuit is _____ its value
used in an emitter-stabilized or voltage-
D) None of the above
divider bias circuit for the same values of
9. A change in value of _____ will create a RC
new load line parallel to its previous one
in a fixed-bias circuit. A) more than
B) the same as
A) RB
C) less than
B) RC
D) None of the above
C) VCC
15. In a collector feedback bias circuit, the
D) VBE
current through the collector resistor is
10. In a fixed-bias circuit, the slope of the _____ and the collector current is _____.
dc load line is controlled by _____.
A) IC IC
A) RB
B) IB + IC IC
B) RC
C) IB, IC
C) VCC
D) None of the above
D) IB
16. _____is the least stabilized circuit.
11. The emitter resistor in an emitter-
stabilized bias circuit appears to be _____ A) Fixed bias
in the base circuit. B) Emitter-stabilized bias

A) larger C) Voltage divider

B) smaller D) Voltage feedback

C) the same 17. _____ is less dependent on the


transistor beta.
D) None of the above
12. _____is the primary difference between A) Fixed bias
the exact and approximate techniques B) Emitter bias
used in the analysis of a voltage divider C) Voltage divider
circuit.
D) Voltage feedback
A) Thevenin voltage ETh 18. In a transistor-switching network, the
B) Thevenin resistance RTh level of the resistance between the
C) Base voltage VB collector and emitter is _____ at the
saturation and is _____at the cutoff.
D) RC
13. The Thevenin equivalent network is A) low, low
used in the analysis of the _____ circuit. B) low, high

A) fixed bias C) high, high


D) high, low D) None of the above
19. In a transistor-switching network, the 24. The _____the stability factor, the
operating point switches from _____ to _____sensitive the network is to variations
_____ regions along the load line. in that parameter.
A) cutoff, active A) higher, more
B) cutoff, saturation B) higher, less
C) active, saturation C) lower, more
D) None of the above D) None of the above
20. For the typical transistor amplifier in 25. In an emitter-bias configuration, the
the active region, VCE is usually about _____ _____ the resistance RE, the _____ the
% to _____ % of VCC stability factor, and the _____ stable is the
system.
A) 0, 100
B) 25, 75 A) smaller, lower, less
C) 45, 55 B) larger, more, more

D) None of the above C) smaller, more, more

21. In any amplifier employing a D) larger, lower, more


transistor, the collector current IC is
sensitive to _____.
CHAPTER 5: BJT AMPLIFIERS
A)
B) VBE 1. Which of the following techniques can
C) ICO be used in the sinusoidal ac analysis of
transistor networks?
D) All of the above
A) Small-signal
22. As the temperature increases, _____,
VBE _____, and ICO _____ in value for every B) Large-signal
10C. C) Small- or large-signal

A) increases, decreases, doubles D) None of the above

B) decreases, increases, remains 2. What is the limit of the efficiency


the same defined by = Po / Pi?
C) decreases, increases, doubles
A) Greater than 1
D) increases, increases, triples
B) Less than 1
23. A significant increase in leakage
current due to increase in temperature C) Always 1
creates _____between IB curves. D) None of the above

A) smaller spacing 3. Which of the following define(s) the


conversion efficiency?
B) larger spacing
C) the same space as at lower
A) Ac power to the load/ac input
temperature
power
B) Ac power to the load/dc power 8. Which of the following is (are) true
supplied regarding the output impedance for
C) Dc output power/ac input frequencies in the midrange 100 kHz of
power a BJT transistor amplifier?
D) All of the above A) The output impedance is purely
resistive.
4. Which of the following should be done
to obtain the ac equivalent of a network? B) It varies from a few ohms to
more than 2 M.
A) Set all dc sources to zero
C) An ohmmeter cannot be used to
B) Replace all capacitors by a
measure the small-signal ac output
short-circuit equivalent.
impedance.
C) Remove all elements bypassed
D) All of the above
by the short-circuit equivalent.
9. What is the range of the current gain
D) All of the above
for BJT transistor amplifiers?
5. The _____ model suffers from being
limited to a particular set of operating
A) less than 1
conditions if it is to be considered
accurate. B) 1 to 100

A) hybrid equivalent C) above 100

B) re D) All of the above

C) 10. The input impedance of a BJT


amplifier is purely _____ in nature and can
D) Thevenin
vary from a few _____ to _____.
6. The _____ model fails to account for the
A) resistive, ohms, megohms
output impedance level of the device and
the feedback effect from output to input. B) capacitive, microfarads, farads

A) hybrid equivalent C) inductive, millihenrys, henrys

B) re D) None of the above

C) 11. For BJT amplifiers, the _____ gain


typically ranges from a level just less than
D) Thevenin
1 to a level that may exceed 1000.
7. Which of the following is (are) true
A) voltage
regarding the input impedance for
frequencies in the midrange 100 kHz of B) current
a BJT transistor amplifier? C) impedance
A) The input impedance is purely D) All of the above
resistive. 12. What is the unit of the parameter ho?
B) It varies from a few ohms to
mega ohms. A) Volt
C) An ohmmeter cannot be used to B) Ohm
measure the small-signal ac input
C) Siemen
impedance.
D) No unit
D) All of the above
13. Which of the h-parameters common-emitter fixed-bias
corresponds to re in a common-base configuration?
configuration? A) ro 10RC
A) hib B) ro < 10RC
B) hfb C) ro < ro
C) hrb D) ro > ro
D) hob 19. Under which of the following
14. What is the range of the input condition(s) is the current gain Av ?
impedance of a common-base A) ro 10RC
configuration?
B) RB 10re
A) A few ohms to a maximum of 50
C) ro 10RC and RB 10re

D) None of the above
B) 1 k to 5 k
20. What does the negative sign in the
C) 100 k to 500 k
voltage gain of the common-emitter fixed-
D) 1 M to 2 M bias configuration indicate?
15. What is the typical value of the A) The output and input voltages
current gain of a common-base are 180 out of phase.
configuration?
B) Gain is smaller than 1.
A) Less than 1
C) Gain is larger than 1.
B) Between 1 and 50
D) None of the above
C) Between 100 and 200
21. For the common-emitter fixed-bias
D) Undefined configuration, there is a _____ phase shift
16. What is the controlling current in a between the input and output signals.
common-base configuration? A) 0
B) 45
A) Ie
C) 90
B) Ic
D) 180
C) Ib
22. Which of the following configurations
D) None of the above has an output impedance Zo equal to RC?
17. What is the typical range of the output A) Fixed-bias common-emitter
impedance of a common-emitter
B) Common-emitter voltage-
configuration?
divider with bypass capacitor
A) 10 to 100
C) Common-emitter voltage-
B) 1 k to 5 k divider without bypass capacitor
C) 40 k to 50 k D) All of the above
D) 500 k to 1 M 23. Which of the following configurations
18. Under which of the following has a voltage gain of RC /re?
conditions is the output impedance of the A) Fixed-bias common-emitter
network approximately equal to RC for a
B) Common-emitter voltage- D) re < 10R2
divider with bypass capacitor 29. Which one of the following
C) Fixed-bias common-emitter and configurations has the lowest input
voltage-divider with bypass capacitor impedance?
D) Common-emitter voltage- A) Fixed-bias
divider without bypass capacitor B) Common-base
24. Which of the following configurations C) Emitter-follower
has the lowest output impedance?
D) Voltage-divider?
A) Fixed-bias
30. For the collector dc feedback
B) Voltage-divider configuration, there is a _____ phase shift
C) Emitter-follower between the input and output signals.
D) None of the above A) 0
25. The _____ configuration is frequently B) 45
used for impedance matching. C) 90
A) fixed-bias D) 180
B) voltage-divider bias 31. Which of the following represent(s)
C) emitter-follower the advantage(s) of the system approach
D) collector feedback over the r-model approach?
26. The emitter-follower configuration A) Thevenin's theorem can be
has a _____ impedance at the input and a used.
_____ impedance at the output. B) The effect of changing the load
A) low, low can be determined by a simple
equation.
B) low, high
C) There is no need to go back to
C) high, low
the ac equivalent model and analyze
D) high, high the entire network.
27. Which of the following gains is less D) All of the above
than 1 for a common-base configuration?
32. The loaded voltage gain of an
A) Ai amplifier is always more than the no-load
B) Av level.
C) Ap A) True
D) None of the above B) False
28. Which of the following conditions 33. The smaller the level of RL, the larger
must be met to allow the use of the the level of ac voltage gain.
approximate approach in a voltage-
divider bias configuration? A) True
A) re > 10R2 B) False
B) RE > 10R2 34. Which of the following is (are) true to
C) RE < 10R2 achieve a good overall voltage gain for the
circuit?
A) The effect of Rs and RL must be B)
considered as a product. C) re
B) The effect of Rs and RL must be D) Ib
considered as a product and
evaluated individually.
C) The effect of Rs and RL must be Fill-in-the-blanks Questions
evaluated individually.
D) None of the above 1. The _____ of the input signal is one of the
first concerns in the sinusoidal ac analysis
35. The _____ the source resistance and/or of transistor networks.
_____ the load resistance, the less the
overall gain of an amplifier. A) period

A) smaller, smaller B) frequency

B) smaller, larger C) magnitude

C) larger, smaller D) None of the above

D) larger, larger 2. The _____ model(s) is (are) commonly


used in the small-signal ac analysis of
36. The current gain for the Darlington transistor networks.
connection is _____.
A) re

A) 1 (2/2) B) hybrid equivalent

B) 1 2 C) re and hybrid equivalent

C) 1 / 2 D) None of the above

D) 1 (2 1) 3. The peak value of the ac input signal is


controlled by the _____ in a transistor
37. What is the voltage gain of a feedback network for the frequencies in the low to
pair connection? midrange.
A) resistors
A) 1
B) applied dc voltage
B) 1
C) capacitors
C) 100
D) None of the above
D) 100
4. _____ can be applied to determine the
38. Which of the following is referred to response of the ac equivalent circuit.
as the reverse transfer voltage ratio?
A) Mesh analysis
A) hi
B) Node analysis
B) hr
C) Thevenin's theorem
C) hf
D) All of the above
D) ho
5. For transistor amplifiers, the no-load
39. In an unbypassed emitter bias voltage gain is _____ the loaded voltage
configuration hie replaces _____ in the gain.
re model.
A) smaller than
A) re
B) greater than D) None of the above
C) the same as 11. The level of re is determined by _____.
D) None of the above
6. The input and output signals are _____ A)
for the typical transistor amplifier at B) IE
frequencies that permit ignoring the C)
effects of the reactive elements.
D) IB
A) in phase
12. The output voltage and the input
B) 180 out of phase voltage are _____ for the common-emitter
C) either in phase or 180 out of configuration.
phase A) in phase
D) None of the above B) 45 out of phase
7. One junction of an operating transistor C) 90 out of phase
is _____ and the other one is _____.
D) 180 out of phase
A) forward-biased, forward-biased
13. The common-emitter configuration
B) forward-biased, reverse-biased has a _____ level of input impedance with a
C) reverse-biased, reverse-biased _____ voltage and current gain.
D) None of the above A) moderate, high
8. For a common-base configuration, the B) low, moderate
input impedance is relatively _____ and the C) low, low
output impedance quite _____.
D) high, low
A) high, small
14. _____ refers to the forward transfer
B) small, high current ratio.
C) small, small
D) high, high A) hi
9. The output voltage and the input B) hr
voltage are _____ for the common-base C) hf
configuration.
D) ho
A) 45 out of phase
15. For the common-emitter and
B) 90 out of phase common-base configurations, the
C) 180 out of phase magnitude of _____ and _____ is often not
D) in phase included in the model.
10. In a common-emitter configuration A) hr, ho
_____ is the controlling current while _____ B) hi, he
is the controlled current. C) hi, hr
A) IC, IB D) he, ho
B) IC, IE 16. In a fixed-bias network, the input
C) IB, IC signal Vi is applied to the _____ of the
transistor while the output Vo is off the B) 90 out of phase
_____. C) 180 out of phase
A) base, collector D) in phase
B) base, emitter 22. An emitter-follower has _____
C) emitter, collector impedance at the input and _____
D) None of the above impedance at the output.
17. In a voltage-divider bias A) high, high
configuration, the voltage-divider B) low, high
equation is used to determine the _____. C) high, low
A) ac level of Vb D) low, low
B) dc level of IB 23. _____ is slightly affected if the condition
C) dc level of VB ro 10RE is not satisfied in the analysis of
D) ac level of Ib an emitter-follower configuration.
18. In a voltage-divider bias A) Zi
configuration, there can be a measurable B) Zo
difference in the results for _____ if the C) Av
condition ro 10RC is not satisfied.
D) Ai
A) Zo
24. A common-base configuration has
B) Av _____ impedance at the input and _____
C) Ai impedance at the output.
D) All of the above A) high, high
19. The bypass capacitor in a common- B) high, low
emitter configuration _____ the voltage C) low, low
gain.
D) low, high
A) significantly decreases
25. In a common-base configuration, the
B) significantly increases input and output voltages are _____ and
C) slightly increases the output and input currents are _____.
D) slightly decreases A) 180 out of phase, 180 out of
20. In an emitter-follower, the voltage phase
gain is _____. B) 180 out of phase, in phase
C) in phase,180 out of phase
A) slightly less than 1 D) in phase, in phase
B) slightly more than 1 26. Ideally, the changes in the load
C) a very large value resistor or the source resistor should
D) None of the above have _____ effect on all the parameters of
the two-port model.
21. In an emitter-follower, the output
voltage is _____ with the input voltage. A) a great

A) 45 out of phase B) a moderate


C) no
D) None of the above A) 0
27. The loaded voltage gain of an B) 1
amplifier is _____ the no-load level. C) D
D) None of the above
A) always more than
33. The feedback pair uses a(n) _____
B) always less than transistor driving a(n) _____ transistor, the
C) always the same as two devices acting effectively much like
D) None of the above one pnp transistor.
28. The coupling capacitor places the load A) pnp, npn
and collector resistors in a _____ B) pnp, pnp
arrangement. C) npn, npn
A) series D) None of the above
B) parallel 34. In an unbypassed emitter-bias
C) series-parallel configuration _____ replaces re in the
D) None of the above hybrid equivalent circuit.
29. The dc load line and ac load line both A) hie
have the same _____ . B) hfe
C) hre
A) x-intercept D) hoe
B) y-intercept 35. In a hybrid equivalent circuit, ______ is
C) slope determined to make it easier to find the
D) Q-point other parameters.
30. The _____ the level of RL, the _____ the A) Zi
level of ac voltage gain. B) Zo
C) Ai
A) smaller, higher D) Av
B) larger, lower
C) smaller, lower
D) None of the above
CHAPTER 6: FET DEVICES
31. The _____ the source resistance, the 1. Which of the following controls the
_____ the overall gain of an amplifier. level of ID?
A) larger, higher
B) larger, lower A) VGS
C) lower, lower B) VDS
D) None of the above C) IG
32. The ac voltage gain of a Darlington D) VDG
connection is about _____.
2. Which of the following is (are) not an C) Source
FET? D) All of the above
8. What is the level of IG in an FET?
A) n-channel
B) p-channel A) Zero amperes
C) p-n channel B) Equal to ID
D) n-channel and p-channel C) Depends on VDS
3. What is the range of an FET's input D) Undefined
impedance?
9. At which of the following is the level of
VDS equal to the pinch-off voltage?
A) 10 to 1 k
A) When ID becomes equal to IDSS
B) 1 k to 10 k
B) When VGS is zero volts
C) 50 k to 100 k
C) IG is zero
D) 1 M to several hundred M
D) All of the above
4. Which of the following transistor(s) has
10. At which of the following condition(s)
(have) depletion and enhancement types?
is the depletion region uniform?
A) BJT
A) No bias
B) JFET
B) VDS > 0 V
C) MOSFET
C) VDS = VP
D) None of the above
D) None of the above
5. A BJT is a _____-controlled device. The
11. Refer to the following characteristic
JFET is a _____ - controlled device.
curve. Calculate the resistance of the FET
A) voltage, voltage at VGS = 0.25 V if ro = 10 k.
B) voltage, current
C) current, voltage
D) current, current
6. The BJT is a _____ device. The FET is a
_____ device.

A) bipolar, bipolar
B) bipolar, unipolar
C) unipolar, bipolar
D) unipolar, unipolar
7. Which of the following is (are) the
terminal(s) of a field-effect transistor
A) 1.1378 k
(FET).
B) 113.78
A) Drain
C) 11.378
B) Gate
D) 11.378 k
12. What is the level of drain current ID for gate-to-source
voltages VGS less than (more negative than) the pinch-off
level?

A) zero amperes

B) IDSS
C) Negative value
D) Undefined
13. The three terminals of the JFET are
the _____, _____, and _____.

A) gate, collector, emitter



B) base, collector, emitter
C) gate, drain, source
D) gate, drain, emitter
14. The level of VGS that results in ID = 0
A) 2.54 V
mA is defined by VGS = _____.
B) 2.54 V
A) VGS(off)
C) 12 V
B) VP
D) Undefined
C) VDS
18. Referring to this transfer curve,
D) None of the above
determine ID at VGS = 2 V.
15. The region to the left of the pinch-off
locus is referred to as the _____ region.
A) saturation
B) cutoff
C) ohmic
D) All of the above
16. Which of the following represent(s)
the cutoff region for an FET?

A) ID = 0 mA

B) VGS = VP
C) IG = 0
D) All of the above A) 0.444 mA
17. Referring to this transfer curve. B) 1.333 mA
Calculate (using Shockley's equation) C) 0.111 mA
VGS at ID = 4mA. D) 4.444 mA
19. What is the ratio of ID / IDSS for VGS = B) 25 Vdc, 10 mAdc
0.5 VP? C) 6 Vdc, 1.0 nAdc
D) None of the above
A) 0.25
23. Hand-held instruments are available
B) 0.5 to measure _____ for the BJT.
C) 1
D) 0 A) dc
20. The drain current will always be one- B) IDSS
fourth of IDSS as long as the gate-to-source C) VP
voltage is _____ the pinch-off value.
D) All of the above
A) one-fourth
24. How many terminals can a MOSFET
B) one-half have?
C) three-fourths
D) None of the above A) 2
21. Which of the following ratings B) 3
appear(s) in the specification sheet for an C) 4
FET?
D) 3 or 4
A) Voltages between specific
25. Which of the following applies to
terminals
MOSFETs?
B) Current levels
C) Power dissipation A) No direct electrical connection
D) All of the above between the gate terminal and the
22. Refer to this portion of a specification channel
sheet. Determine the values of reverse- B) Desirable high input impedance
gate-source voltage and gate current if C) Uses metal for the gate, drain,
the FET was forced to accept it. and source connections
D) All of the above
26. Referring to the following transfer
curve, determine the level of VGS when the
drain current is 20 mA.

A) 25 Vdc, 200 nAdc


the very desirable high input impedance
of the device.
A) SiO
B) GaAs
C) SiO2
D) HCl
29. Refer to the following figure. Calculate
VGS at ID = 8 mA for k = 0.278 102 A/V2.

A) 1.66 V
B) 1.66 V
C) 0.66 V
D) 0.66 V
27. Refer to the following curves.
Calculate ID at VGS = 1 V.
A) 3.70 V
B) 5.36 V
C) 7.36 V
D) 2.36 V
30. The transfer curve is not defined by
Shockley's equation for the _____.
A) JFET
B) depletion-type MOSFET
C) enhancement-type MOSFET
D) BJT
31. Which of the following applies to a
A) 8.167 mA safe MOSFET handling?
B) 4.167 mA
A) Always pick up the transistor by
C) 6.167 mA
the casing.
D) 0.616 mA
B) Power should always be off
28. It is the insulating layer of _____ in the when network changes are made.
MOSFET construction that accounts for
C) Always touch ground before A) 1010
handling the device. B) 109
D) All of the above C) 108
32. What is the purpose of adding two D) 1011
Zener diodes to the MOSFET in this
figure?
Fill-in-the-blanks Questions

1. A junction field-effect transistor (JFET)


is a _____ device.

A) current-controlled
B) voltage-controlled
C) voltage-current controlled
D) None of the above
2. The FET is a _____ device depending
solely on either electron (n-channel) or
A) To reduce the input impedance hole (p-channel) conduction.
B) To protect the MOSFET for both A) unipolar
polarities B) bipolar
C) To increase the input C) tripolar
impedance
D) None of the above
D) None of the above
3. One of the most important
33. Which of the following is (are) the characteristics of the FET is its _____
advantage(s) of VMOS over MOSFETs? impedance.
A) Reduced channel resistance A) low input
B) Higher current and power B) medium input
ratings
C) high input
C) Faster switching time
D) None of the above
D) All of the above
4. The _____ transistor has become one of
34. Which of the following FETs has the the most important devices used in the
lowest input impedance? design and construction of integrated
circuits for digital computers.
A) JFET A) MOSFET
B) MOSFET depletion-type B) BJT
C) MOSFET enhancement-type C) JFET
D) None of the above D) None of the above
35. Which of the following input 5. In the n-channel transistor, the drain
impedances is not valid for a JFET? and source are connected to the _____
channel while the gate is connected to the A) using Shockley's equation
two layers of _____ material. B) using both Shockley's equation
A) p-type, n-type and by output characteristics
B) p-type, p-type C) characteristics
C) n-type, p-type D) None of the above
D) n-type, n-type 11. The active region of an FET is
6. In an FET transistor, the depletion bounded by _____.
region is _____ near the top of both p-type
materials. A) ohmic region
A) wider B) cutoff region
B) narrower C) power line
C) the same as the rest of the D) All of the above
depletion region 12. A(n) _____ can be used to check the
D) None of the above condition of an FET.
7. The pinch-off voltage continues to drop
in a _____ manner as VGS becomes more A) digital display meter (DDM)
and more negative. B) ohmmeter (VOM)
A) linear C) curve tracer
B) parabolic D) All of the above
C) cubic 13. In a curve tracer, the _____ reveals the
D) None of the above distance between the VGS curves for the n-
8. The region to the right of the pinch-off channel device.
locus is commonly referred to as the _____ A) vertical sens.
region. B) horizontal sens.
A) constant-current C) Per step
B) saturation D) gm
C) linear amplification 14. In an FET circuit, _____ is normally the
D) All of the above parameter to be determined first.
9. As VGS becomes _____ negative, the slope A) VGS
of each curve in the characteristics B) VDS
becomes _____ horizontal corresponding
C) VDG
with an increasing resistance level.
D) ID
A) less, more
15. The primary difference between the
B) more, less
construction of a MOSFET and an FET is
C) more, more the _____.
D) None of the above A) construction of the gate
10. The transfer curve can be obtained by connection
_____. B) low input impedance
C) threshold voltage D) All of the above
D) None of the above 21. _____ has high input impedance, fast
16. The primary difference between the switching speeds, and lower operating
construction of depletion-type and power levels.
enhancement-type MOSFETs is _____. A) CMOS
A) the size of the transistor B) FET
B) the absence of the channel C) BJT
C) the reverse bias junction D) None of the above
D) All of the above 22. The FET resistance in the ohmic
17. The level of _____ that results in the region is _____ at VP and _____ at the origin.
significant increase in drain current in A) smallest, largest
enhancement-type MOSFETs is called B) largest, smallest
threshold voltage VT.
C) larger, smaller
A) VDD
D) smaller, larger
B) VDS
23. The silicon dioxide (SiO2) layer used
C) VGS in a MOSFET is _____.
D) VDG
18. In an n-channel enhancement-type A) an insulator
MOSFET with a fixed value of VT, the _____ B) a conductor
the level of VGS, the _____ the saturation
C) a semiconductor
level for VDS.
D) None of the above
A) higher, more
24. In an n-channel depletion-type
B) higher, less
MOSFET the region of positive gate
C) lower, lower voltages on the drain or transfer
D) None of the above characteristics is referred to as the _____
19. The enhancement-type MOSFET is in region with the region between cutoff and
the cutoff region if _____. the saturation level of IDreferred to as the
_____ region.
A) applied VGS is larger than VGS(Th) A) depletion, enhancement

B) applied VGS is less than or equal B) enhancement, enhancement


to VGS(Th) C) enhancement, depletion
C) VGS has a positive level D) None of the above
D) None of the above 25. VMOS FETs have a _____ temperature
20. The specification sheet provides _____ coefficient that will combat the possibility
to calculate the value of k for of thermal runaway.
enhancement-type MOSFETs.
A) VGS(on) A) positive
B) ID(on) B) negative

C) VGS(Th) C) zero
D) None of the above 5. Calculate the value of VDS.
CHAPTER 7: DC BIASING FETs

1. What is the approximate current level


in the gate of an FET in dc analysis?
A) 0 A
B) 0.7 mA
C) 0.3 mA
D) Undefined
2. Which of the following current
equations is true?

A) IG = ID A) 0 V
B) IG = IS B) 8 V
C) ID = IS C) 4.75 V
D) IG = ID = IS D) 16 V
3. For the FET, the relationship between 6. The self-bias configuration eliminates
the input and output quantities is _____ the need for two dc supplies.
due to the _____ term in Shockley's
equation. A) True
A) nonlinear, cubed B) False
B) linear, proportional 7. Which of the following is (are) true of a
C) nonlinear, squared self-bias configuration compared to a
4. The input controlling variable for a(n) fixed-bias configuration?
_____ is a current level and a voltage level A) One of the dc supplies is
for a(n) _____. eliminated.
A) BJT, FET B) A resistor RS is added.
B) FET, BJT C) VGS is a function of the output
C) FET, FET current ID.
D) BJT, BJT D) All of the above
8. Which of the following represents the
voltage level of VGS in a self-bias
configuration?
A) VG
B) VGS(off)
C) VS
D) VP
9. What is the new value of RD when there
is 7 V across VDS?
A) 3 k
B) 3.3 k A) 2.400 k
C) 4 k B) 5.167 k

D) 5 k C) 6.167 k

10. Which of the following is a false D) 6.670 k


statement regarding the dc load line when 12. Calculate the value of VDS.
comparing self-bias and voltage-divider
configurations?
A) Both are linear lines.
B) Both cross the origin.
C) Both intersect the transfer
characteristics.
D) Both are obtained by writing
Kirchhoff's voltage law (KVL) at the
input side loop.
11. For what value of RD is the voltage
across VDS zero?

A) 0 V
B) 0.35 V
C) 3.8 V
D) 33.5 V
13. Which of the following describe(s) the
difference(s) between JFETs and
depletion-type MOSFETs?
A) VGS can be positive or negative
for the depletion-type.
B) ID can exceed IDSS for the B) 100 M
depletion-type. C) 110 M
C) The depletion-type can operate D) 220 M
in the enhancement mode.
16. Depletion-type MOSFETs do not
D) All of the above permit operating points with positive
14. At what value of RS does the circuit values of VGS and levels of ID that exceed
switch from depletion mode to IDSS.
enhancement mode? A) True
B) False
17. For what value of RS can the
depletion-type MOSFETs operate in
enhancement mode?

A) 250
B) 500
C) 10 M
D) None of the above A) 2.4 k
15. For what value of R2 is VGSQ equal to 1 B) 5 k
V? C) 6.2 k
D) None of the above
18. Determine the value of VDSQ.

A) 10 M`
A) 3.5 V D) 20 V, 20 V
B) 4.86 V 21. Calculate VD.
C) 7.14 V
D) 10 V
19. Calculate the value of VDSQ.

A) 23.0 V
B) 17.0 V
C) 4.6 V
A) 0 V
D) 12.4 V
B) 20 V
22. Specification sheets typically provide
C) 30 V the value of the constant k for
D) 40 V enhancement-type MOSFETs.
20. What are the voltages across RD and A) True
RS? B) False
23. Calculate VDS'.

A) 0 V, 0 V
B) 5 V, 5 V
C) 10 V, 10 V
A) 0 V A) 2 k, 2 k
B) 6 V B) 1 k, 5.3 k
C) 16 V C) 3.2 k, 400
D) 11 V D) 2.5 k, 5.3 k
24. Calculate VCE. 26. Calculate the value of RS. Assume
VGSQ = 2V.

A) 0 k
B) 1.68 k
A) 0 V C) 6.81 k`
B) 2 V D) 8.5 k
C) 3 V 27. Calculate the value of RD.
D) 5.34 V
25. Given the values of VDQ and IDQ for this
circuit, determine the required values of
RD and RS.

A) 2 k
B) 3 k
C) 3.5 k
D) 4.13 k
28. In the design of linear amplifiers, it is
good design practice to choose operating
points that do not crowd the saturation
level or cutoff regions.
A) True
B) False
29. Seldom are current levels measured
since such maneuvers require disturbing
the network structure to insert the meter.
A) True
B) False
30. Calculate the value of VDS.

A) 1.2 mA, 1.8 V


B) 1.5 mA, 1.5 V
C) 2.0 mA, 1.2 V
D) 3.0 mA, 0.8 V
32. Calculate VDSQ.

A) 3 V
B) 3 V
C) 4 V
D) 4 V
31. Determine the quiescent values of
ID and VGS.
A) 1.0 V
B) 1.50 V
C) 2.56 V
D) 3.58 V
33. On the universal JFET bias curve, the
vertical scale labelled _____ can, in itself, be
used to find the solution to _____
configurations.
A) m, fixed-bias
B) M, fixed-bias
C) M, voltage-bias D) None of the above
D) m, voltage-bias 4. For _____, Shockley's equation is applied
34. Through proper design, a ______ can be to relate the input and the output
introduced that will affect the biasing quantities.
level of a voltage-controlled JFET resistor. A) JFETs
A) photodiode B) depletion-type MOSFETs
B) thermistor C) enhancement-type MOSFETs
C) laser diode D) JFETs and depletion-type
D) Zener diode MOSFETs
35. For the noninverting amplifier, one of 5. The coupling capacitors are _____ for the
the most important advantages dc analysis and _____________ for the ac
associated with using a JFET for control is analysis.
the fact that it is _____ rather than _____ A) open-circuit, low impedance
control. B) short-circuit, low impedance
A) dc, ac C) open-circuit, high impedance
B) ac, dc D) None of the above
6. In a fixed-bias configuration, the
Fill-in-the-blanks Questions voltage level of VGS is equal to _____.
A) VS
1. For the field-effect transistor, the B) VG
relationship between the input and the C) VGS(off)
output quantities is _____.
D) VP
A) linear
7. The ratio of current ID to IDSS is equal to
B) nonlinear
_____ for a fixed-bias configuration.
C) 3rd degree
A) 0
D) None of the above
B) 0.25
2. The input controlling variable for an C) 0.5
FET transistor is a _____ level.
D) 1

A) resistor 8. When plotting the transfer


characteristics, choosing VGS = 0.5VP will
B) current
result in a drain current level of _____ IDSS.
C) voltage
A) 0
D) All of the above
B) 0.25
3. The controlled variable on the output C) 0.5
side of an FET transistor is a _____ level.
D) 1
A) current
9. The dc load line is drawn using the
B) voltage
equation obtained by applying Kirchhoff's
C) resistor voltage law (KVL) at _____ side loop(s) of
the circuit.
A) the output B) more rapidly
B) the input C) the same
C) both the input and output D) None of the above
D) None of the above 14. In _____ configuration(s) a depletion-
10. The slope of the dc load line in a self- type MOSFET can operate in
bias configuration is controlled by _____. enhancement mode.
A) VDD A) self-bias

B) RD B) fixed-bias with no VGG

C) RG C) voltage-divider

D) RS D) None of the above

11. _____ levels of RS result in _____ 15. In an enhancement-type MOSFET, the


quiescent values of ID and _____ negative drain current is zero for levels of VGS less
values of VGS. than the _____ level.
A) Increased, lower, less A) VGS(Th)

B) Increased, higher, less B) VGS(off)

C) Increased, higher, more C) VP

D) Increased, less, lower D) VDD

12. The slope of the dc load line in a 16. Specification sheets typically provide
voltage-divider is controlled by _____. _____ for enhancement-type MOSFETs.
A) the threshold voltage VGS(Th)
B) a level of drain current ID(on)
C) an ID(on)
D) All of the above
17. In a feedback-bias configuration, the
slope of the dc load line is controlled by
_____.
A) RG
B) RD
C) VDG
D) None of the above
A) R1 18. For R2 smaller than _____ k the
B) R2 voltage VD is equal to VDD = 16 V.
C) RS
D) All of the above
13. In a depletion-type MOSFET, the
transfer characteristic rises _____ as
VGS becomes more positive.
A) less rapidly
22. In a universal JFET bias curve, the
vertical scale labeled m is used to find the
solution to the _____ configuration.
A) fixed-bias
B) self-bias
C) voltage-divider
D) None of the above
23. In a universal JFET bias curve, the
vertical scale labeled M is used for finding
the solution to the _____ configuration.
A) fixed-bias
B) self-bias
C) voltage-divider
D) None of the above
A) 3.75
B) 5
24. In a universal JFET bias curve, the
horizontal axis is _____.
C) 12.0
D) 24 A) VDS
19. _____ must be considered in the total B) ID / IDSS
design process.
C) the normalized level
A) Dc conditions D) VGS
B) Level of amplification
25. In p-channel FETs, the level of VGS is
C) Signal strength _____ while the level of VDS is _____.
D) All of the above
20. In a JFET, the level of _____ is limited to A) negative, negative
values between 0 V and VP. B) positive, positive
A) VSQ C) negative, positive
B) VDGQ D) positive, negative
C) VDSQ
D) VGSQ
CHAPTER 8: FET AMPLIFIERS
21. The level of VDS is typically between
_____ % and _____ % of VDD.
1. FET amplifiers provide ________.
A) 0, 100
B) 10, 90 A) excellent voltage gain
C) 25, 75 B) high input impedance
D) None of the above C) low power consumption
D) All of the above
2. A BJT is a ________-controlled device. D) 1000 M
8. Referring to the transfer characteristics
A) current shown below, calculate gm at VGSQ = 1 V.
B) voltage
C) power
D) resistance
3. An FET is a ________-controlled device.

A) current
B) voltage
C) power
D) resistance
4. The E-MOSFET is quite popular in
________ applications.

A) digital circuitry
A) 2 mS
B) high-frequency
B) 3 mS
C) buffering
C) 4 mS
D) All of the above
D) 5 mS
5. What is the range of gm for JFETs?
9. Use the following equation to calculate
gm for a JFET having IDSS = 10 mA, VP = 5
A) 1 S to 10 S
V, and VGSQ = 2.5 V.
B) 100 S to 1000 S
C) 1000 S to 5000 S
D) 10000 S to 100000 S
6. For what value of ID is gm equal to 0.5
gm0?

A) 0 mA A) 2 mS
B) 0.25 IDSS B) 3 mS
C) 0.5 IDSS C) 4 mS
D) IDSS D) 5 mS
7. What is the typical value for the input 10. Referring to the following figure,
impedance Zi for JFETs? calculate gm for VGSQ = 1.25 V.

A) 100 k
B) 1 M
C) 10 M
A) 100 k
A) 2 mS
B) 80 k
B) 2.5 mS
C) 25 k
C) 2.75 mS
D) 5 k
D) 3.25 mS
13. Calculate gm and rd if yfs = 4 mS and
11. Referring to this figure, obtain gm for yos = 15 S.
ID = 6 mA.
A) 4 mS, 66.7 k
B) 4 mS, 15 k
C) 66.7 k, 4 mS
D) None of the above
14. The steeper the slope of the ID versus
VGS curve, the ________ the level of gm.
A) less
B) same
C) greater
15. When VGS = 0.5 Vp gm is ________ the
A) 2.83 mS maximum value.
B) 3.00 mS
C) 3.25 mS
A) one-fourth
B) one-half
D) 3.46 mS
C) three-fourths
12. Referring to the figure below,
determine the output impedance for VGS = D) two-thirds
3 V at VDS = 5 V. 16. If ID = IDSS / 2, gm = ___________ gmo.

A) 1
B) 0.707
C) 0.5
D) 1.414
17. The more horizontal the characteristic
curves on the drain characteristics, the
________ the output impedance.
A) less
B) same
C) greater
18. What is (are) the function(s) of the
coupling capacitors C1 and C2 in an FET
circuit?
A) to create an open circuit for dc
analysis
B) to isolate the dc biasing
arrangement from the applied signal
and load A) 1.85 k
C) to create a short-circuit B) 1.92 k
equivalent for ac analysis
C) 2.05 k
D) All of the above
D) 2.15 k
19. Where do you get the level of gm and
rd for an FET transistor? 21. Referring to this figure, calculate Av if
yos = 20 S.
A) from the dc biasing
arrangement
B) from the specification sheet
C) from the characteristics
D) All of the above
20. Referring to this figure, find Zo if yos =
20 S.

A) 3.48
B) 3.56
C) 3.62
D) 4.02 B) Zo
22. For the fixed-bias configuration, if rd < C) Av
10 RD, then Zo = ________. D) All of the above
A) RD 26. Referring to this figure, calculate
B) RD || rd Zo for VGSQ = 3.2 V.
C) RG
D) -gm (RD || rd)
23. Which of the following is a required
condition to simplify the equations for
Zo and Av for the self-bias configuration?
A) rd 10RD
B) rd = RD
C) rd 10RD
D) None of the above
24. Referring to this figure, calculate Zo if
yos = 40 S.

A) 362.52
B) 340.5
C) 420.5
D) 480.9
27. Referring to this figure, calculate Zi for
yos = 20 S. Assume VGSQ = 2.2V.

A) 2.92 k
B) 3.20 k
C) 3.25 k
D) 3.75 k
25. On which of the following parameters
does rd have no or little impact in a
source-follower configuration?
A) Zi
A) 300.2
B) 330.4
C) 340.5
D) 350.0
28. Which of the following is (are) related
to depletion-type MOSFETs?

A) VGSQ can be negative, zero, or


positive.
B) gm can be greater or smaller
than gm0.
C) ID can be larger than IDSS.
D) All of the above
A) 2.42 M
29. Referring to this figure, calculate
B) 2.50 M
Av for yos = 58 S.
C) 2.53 M
C) 2.59 M
31. Referring to this figure, calculate Zo if
rd = 19 k.

A) 7.29
B) 7.50 A) 1.75 k
C) 8.05 B) 1.81 k

D) 8.55 C) 1.92 k

30. Referring to this figure, calculate Zi if D) 2.00 k


rd = 19 k. 32. Referring to this figure, calculate Av if
rd = 19 k.
A) 2.85
A) 2.2 k
B) 3.26
B) 2.42 k
C) 2.95
C) 2.62 k
D) 3.21
D) 2.82 k
33. Determine the value for RD if the ac
gain is 8. 35. For an FET small-signal amplifier, one
could go about troubleshooting a circuit
by ________.
A) viewing the circuit board for
poor solder joints
B) using a dc meter
C) applying a test ac signal
D) All of the above

Fill-in-the-blanks Questions

1. A field-effect transistor amplifier


provides excellent voltage gain with the
added feature of a _____ input impedance.
A) 1.51 k A) low
B) 1.65 k B) medium
C) 1.85 k C) high
D) 2.08 k D) None of the above
34. Referring to this figure, calculate the 2. The depletion MOSFET circuit has a
value of RD if the ac gain is 10. Assume _____ input impedance than a similar JFET
VGSQ = Vp. configuration.
A) much higher 8. The transconductance gm _____ as the Q-
B) much lower point moves from Vp to IDSS
C) lower
A) decreases
D) higher
B) remains the same
3. The _____ is quite popular in digital
circuits, especially in CMOS circuits that C) increases
require very low power consumption. D) None of the above
A) JFET 9. gm has its maximum value for a JFET at
B) BJT _____.
C) D-type MOSFET
A) Vp
D) E-type MOSFET
B) 0.5 Vp
4. _____ is the amplification factor in FET
transistor amplifiers. C) 0.3 Vp
D) IDSS
A) Zi 10. The value of gm is at its maximum
B) gm gm0 at VGS equal to _____ and zero at
VGS equal to _____.
C) ID
A) 0 V, Vp
D) IG
B) Vp, 0 V
5. _____ is an undefined quantity in a JFET.
C) 0.5Vp, 0.3Vp

A) Ai D) 0.3Vp , 0.5Vp

B) Av 11. The range of input impedance Zi for


MOSFETs is _____.
C) Zi
D) Zo
A) 1 k 10 k
6. The _____ controls the _____ of an FET.
B) 100 k 1 M
C) 10 M 100 M
A) ID, VGS
D) 1012 to 1015
B) VGS, ID
12. The range of output admittance yos for
C) IG, VDS
FETs is _____.
D) IG, ID
7. Transconductance is the ratio of A) 5 S 10 S
changes in _____.
B) 10 S 50 S
C) 50 S 100 S
A) ID to VGS
D) 200 S 500 S
B) ID to VDS
13. The _____ configuration has the distinct
C) VGS to IG
disadvantage of requiring two dc voltage
D) VGS to VDS sources.
A) self-bias
B) voltage-divider 19. A _____ configuration has a voltage gain
C) fixed-bias less than 1.
D) All of the above
A) fixed-bias
14. _____ is the network-input impedance
for a JFET fixed-bias configuration. B) self-bias

A) RG C) source-follower

B) RD D) voltage-divider

C) Zero 20. The input and output signals are 180


out of phase in a _____ configuration.
D) None of the above
A) source-follower
15. _____ is a required step in order to
calculate Zo. B) common-gate
C) common-drain
A) Setting IG equal to zero D) voltage-divider
B) Setting Vi equal to zero 21. The isolation between input and
C) Setting ID equal to IDSS output circuits in the ac equivalent circuit
is lost in a _____ configuration.
D) None of the above
A) common-gate
16. _____ configuration(s) has (have) Zo
RD. B) common-source
C) common-drain
A) Fixed-bias D) None of the above
B) Self-bias 22. The _____ configuration has an input
C) Voltage-divider impedance, which is other than RG.
D) All of the above A) common-source

17. _____ is the only parameter that is B) common-gate


different between voltage-divider and C) common-drain
fixed-bias configurations. D) None of the above
A) Zi 23. The gate-to-source voltage VGS of a(n)
B) Av _____ must be larger than the threshold
C) Zo VGS(Th) for the transistor to conduct.
D) None of the above A) JFET

18. The input and output signals are in B) D-type MOSFET


phase in a _____ configuration. C) E-type MOSFET
A) fixed-bias D) None of the above
B) source-follower 24. rd changes from one operation region
C) voltage-divider to another with _____ values typically
occurring at _____ levels of VGS (closer to
D) self-bias
zero).
A) lower, lower
B) lower, higher
C) higher, lower
D) None of the above
25. The _____ does not support Shockley's
equation.

A) JFET
B) D-type MOSFET
C) E-type MOSFET
D) None of the above