Ordering number : EN7491A

50A02SS
Bipolar Transistor
http://onsemi.com
50V, 0.4A, Low VCE(sat) PNP Single SSFP

Applications
Low-frequency Amplifier, high-speed switching small motor drive, muting circuit

Features
Large current capacity
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210m[IC=0.5A, IB=50mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --50 V
Collector-to-Emitter Voltage VCEO --50 V
Emitter-to-Base Voltage VEBO --5 V
Collector Current IC --400 mA
Collector Current (Pulse) ICP --800 mA
Collector Dissipation PC Mounted on a glass epoxy board (20301.6mm) 200 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions Product & Package Information

unit : mm (typ) Package : SSFP
7029A-002 JEITA, JEDEC : SC-81
Minimum Packing Quantity : 8,000 pcs./reel
1.4 50A02SS-TL-E
0.25 0.1 Packing Type: TL Marking
0.3

0 to 0.02
0.8
1.4

LOT No.

LOT No.

1 2
XN
0.3

0.2 TL
0.45

Electrical Connection
0.6

3
0.07

1 2 1 : Base
2 : Emitter
3 : Collector
1
0.07

3
SSFP
2

Semiconductor Components Industries, LLC, 2013

August, 2013 71812 TKIM/O3103 TSIM TA-100149 No.7491-1/7
 50A02SS

Electrical Characteristics at Ta=25C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB= --40V, IE=0A --100 nA
Emitter Cutoff Current IEBO VEB= --4V, IC=0A --100 nA
DC Current Gain hFE VCE= --2V, IC= --10mA 200 500
Gain-Bandwidth Product fT VCE= --10V, IC= --50mA 690 MHz
Output Capacitance Cob VCB= --10V, f=1MHz 3.8 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC= --100mA, IB= --10mA --60 --120 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= --100mA, IB= --10mA --0.9 --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10A, IE=0A --50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE= --50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --10A, IC=0A --5 V
Turn-ON Time ton 30 ns
Storage Time tstg See specified Test Circuit. 170 ns
Fall Time tf 30 ns

Switching Time Test Circuit

IB1
PW=20s
OUTPUT
D.C.1% IB2

INPUT RB
VR RL

50 + +

220F 470F

VBE=5V VCC= --25V

IC=20IB1= --20IB2= --200mA

Ordering Information
Device Package Shipping memo
50A02SS-TL-E SSFP 8,000pcs./reel Pb Free

No.7491-2/7
 50A02SS

IC -- VCE IC -- VBE
--500 --600
A A mA A VCE= --2V
0m -25m --20

A
--15m

m
--450 --3 -

--40
A
--10m --500
--400

Collector Current, IC -- mA
Collector Current, IC -- mA

A
--350 --50m --5mA --400
--300

--250 --2mA --300

--1mA

C
--200

25C
--25C
Ta=75
--200
--150 --500A
--100
--200A --100
--50
IB=0
0 0
0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Collector-to-Emitter Voltage, VCE -- mV IT05118 Base-to-Emitter Voltage, VBE -- V IT05119
hFE -- IC VCE(sat) -- IC
1000 3
VCE= --2V IC / IB=10
7

Saturation Voltage, VCE(sat) -- mV

2
Ta=75C
5
25C
DC Current Gain, hFE

3
--25C --100

Collector-to-Emitter 7
2
5 C
= 75
Ta
100 C
25
3
C
5
7 --2
2
5

3 --10
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7
Collector Current, IC -- mA IT05120 Collector Current, IC -- mA IT05410
VCE(sat) -- IC VCE(sat) -- IC
--1000 3
IC / IB=20 2
IC / IB=50
7
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VCE(sat) -- mV

5
--1000
3 7
2 5

3
Collector-to-Emitter

Collector-to-Emitter

--100 2
7
C
75 --100
5
Ta= 5 C 75C
--2 7 Ta=
3 C
5
--25
2 25C 3
25C
2
--10
7 --10
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000
Collector Current, IC -- mA IT05123 Collector Current, IC -- mA IT05124
VBE(sat) -- IC Cob -- VCB
2 10
IC / IB=20 f=1MHz

7
Saturation Voltage, VBE(sat) -- V

Output Capacitance, Cob -- pF

--1.0 5
Ta= --25C
7
75C
3
Base-to-Emitter

25C
5

2 1.0
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 --1.0 2 3 5 7 --10 2 3 5 7 --100
Collector Current, IC -- mA IT05125 Collector-to-Base Voltage, VCB -- V IT05122

No.7491-3/7
 50A02SS
f T -- IC Ron -- IB
1000 100
VCE= --10V 7 f=1MHz 1k
5 IN OUT
Gain-Bandwidth Product, f T -- MHz

7 3 1k
2

ON Resistance, Ron --
5 IB
10
7
5

3 3
2

1.0
2 7
5
3
2

100 0.1
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC -- mA IT05121 Base Current, IB -- mA IT06093
PC -- Ta
250
Collector Dissipation, PC -- mW

200 M
ou
nt
ed
on
ag
150 las
se
po
xy
bo
100 ar
d(
20
3
01
50 .6m
m
)

0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C IT05045

No.7491-4/7
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Embossed Taping Specification

50A02SS-TL-E

No.7491-5/7
 50A02SS

Outline Drawing Land Pattern Example

50A02SS-TL-E
Mass (g) Unit
Unit: mm
0.0018 mm
* For reference

0.5

0.5
1.2
0.45 0.45

0.45 0.45

No.7491-6/7
 50A02SS

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