SURVEY ON GRPHENE TRANSISTOR OVER SILICON TRANSISTOR

HITHAISHI DEVARAJ
ECE,Don Bosco Institute Of Technology, Kumbalagodu, Bangalore, Karnataka, India
Email id: work.hithaishi@gmail.com

ABSTRACT: From past five years, the graphene has gained lot of attention in the field of device.
Devices based on graphene are considered as an option for a post-Si electronics which result in a
extensive progress in the development of graphene transistors. Ever since to assess the potential of
grapheme realistically, the properties of graphene have to be analyzed carefully. Graphene
properties like high transconductance, high saturation velocity, high current carrying capacity,
high carrier mobility and ambipolar characteristics extends its utilization in high frequency
applications and Meanwhile gapless in band of graphene for digital applications is the challenging
factor and significant progress has been made on graphene analog devices for radio-frequency
(RF) applications.

In This present paper various experimental results have been summed up to analyze the
characteristic of graphene transistor in different frequency range with some specific applications .

KEYWORDS: Graphene, bilayer graphene transistor, bandgap, MOSFET, carrier transport,

mobility.

INTRODUCTION

Graphene based transistors are fabricated by different manufacturing methods in several technical
designs for various analog and digital applications (like memory devices). Graphene properties are
elevated with the consideration of MOSFETS with channel length of 70nm. In this paper a
following set of experimental studies are discussed with the consideration of all the different
properties of grapheme at different frequency and its applications are also specified.

Graphene transistor are fabricated on epitaxial grapheme grown on a SiC substrate. These
grapheme are used in RF frequency and for RF performance transistor fabricated is of sub-100nm.
For 90nm graphene FET, a cut-off frequency will be as high as 170GHz is achieved using a
scalable top down fabrication processes. RF performance of grapheme FETs can be enabled by
channel length scaling with structure optimization and contact resistance reduction.

Extremely attractive properties of graphene include carrier mobilities of up to 15000 cm2/Vs for
graphene on SiO2, 27000 cm2/Vs for epitaxial graphene and 200000 cm2/Vs for suspended
graphene. In addition, high current carrying capability exceeding 1x108 A/cm2, high thermal
conductivity, high transparency and mechanical stability have been reported. In this paper
grapheme switches is briefly discuss and its thermal conductivity and heat interpretation is also
covered. The length and width dependence of thermal conductivity of 0.25-m graphene could
reach about 35% of the ballistic limit.

The self heating effects in GFETs with deep sub-micrometer channel length will also be touched.
We also theoretically study the effects of substrate material on the device performance and
reliability. Channel length scaling behavior of GFETs and the impact of contact thermal
conductance on short-channel GFETs are investigated. The paper flows with state-of-the-art of
graphene MOSFETs.

PROPERTIES ANALYSIS AND THEORTICAL RESULTS

Because of low static power dissipation Si CMOS dominating in all logic technologies. Hence
FET-based successor for Si CMOS will need transistors able to switch off, also wide bandgap,
preferably 0.4 eV or more is needed to achieve it. Gapless large-area graphene channels are not
suitable for logic FETs and ways to open a gap in graphene have to be found.

On the other hand, Switch-off is not required in RF applications.With the consideration of a small-
signal low-noise amplifier. In such a circuit, the FET is permanently operated in the on-state and
the small RF signals to be amplified are superimposed onto the dc gate voltage.

To summarize we state that (i) for graphene transistors to be used in a CMOS-like logic, switch-off
is indispensable and a semiconducting channel is needed, and (ii) for RF graphene MOSFETs the
ability to switch off would certainly be useful but is not mandatory.

Several approaches are explored to create a gap in grapheme. Constraining one dimension of large-
area graphene thus forming narrow GNRs (graphene nanoribbon) is one of the most popular
method along with this biasing bilayer grapheme is other better method. Armchair (ac) and zigzag
(zz) nanoribbons are two ideal types of GNRs. The studies and experiment publishes that these
two configurations show a bandgap EG depends on the GNR width w ie., to EG 1/w.

Fig1: Electron mobility vs. bandgap. Fig 2: Cutoff frequency vs. gate length for different RF FET types.

Now will discuss about different properties of graphene are carrier transport and initiate with the
mobility. The high carrier mobility is the major advantage of graphene. Indeed gapless grapheme
shows very high mobilities. In exfoliated graphene, mobilities in excess of 10,000 cm2/Vs are
routinely measured and for ideal graphene mobilities of 200,000 cm2/Vs are predicted. On the
other hand, theoretical investigations suggest that the gap opening in narrow GNRs will be
accompanied by a dramatic mobility reduction. This is not a big surprise since a decreasing
mobility for increasing bandgap is a well known trend for semiconductors. This trend is indicated
in Fig. 1 showing the electron mobility in several conventional semiconductors, Si nanowires,
carbon nanotubes, large-area graphene, and GNRs.

523
The DC transfer characteristics of a 750nm gate length device are shown in Fig. 2a. Figure 3a and
4a shows the DC transconductance (Gm) and output conductance (Gd) of the measured device. To
order to obtain the RF gm and gd, non linear components has to be evaluated and it has been done
using small signal model representation. Later from s parameter desired drain and gate conditions
are measured. Figure 3b and 4b shows the extracted RF gm and gd as a function of gate and drain
bias. Current-voltage characterstics of the graphene is evaluated from the combined evaluation of
gm and gd over gate and drain bias respectively.
.

Fig. 2a: DC transfer characterstics. Fig. 2b: RF transfer characterstics

At high frequencies, drain current is improves by 50% and peak gm improves by 20% due to
decreased trapping of charge in the dielectric, as compared to DC Ion and Gm. The two primary
sources of traps in transistors are interface traps and bulk dielectric traps. The trap response time of
interface traps is exponentially related to the energetic distance from the band edges.

(a) (b)

Fig. 3(a): DC transconductance vs. gate bias. Fig. 3 (b): RF transconductance vs. gate bias

In graphene, carriers will be exchanged with their valence band and/or conduction band because of
the absence of a bandgap. Hence, even at RF measurement frequencies, these traps are active and
degrade the RF IV characteristics. Alternatively, the bulk traps in the dielectric are slow traps as
they rely on the carriers into the oxide

Using the gradual channel approximation, RF and DC transconductance was modeled and also
measured which is presented in fig.5. The model includes the effect of access resistance, effective
trap density (Dit) and contact resistance. The series resistance for this device is 340 ohm-/lm. The

524
extracted effective Di(2.3xlOl3/cm2 /eV (DC) and 1.8x 10 13/cm2/eV (RF), shows the reduction
in active traps at RF frequency confirming that the improvement in the RF IV performance is
attributed to inactive slow bulk traps. In summary, we have discussed about the RF IV modeling of
graphene transistors with HfD2 high-K dielectric. The extracted RF IV shows a 50% increase in
current as compared to equivalent DC IV characteristics. The increase in current and
transconductance is attributed to the reduction of active bulk traps at GHz frequency.

(a) (b)

Fig. 4 (a): DC output conductance. Fig.4(b): RF output conductance

Gate bias is swept from OV to 2V with steps of O.5V

Fig 5: DC and RF transconductance modeled using channel approximation.

Self-heating effects in graphene transistors were theoretically studied in this paper by solving the
coupled NEGF formalism and thermal transport equation self-consistently. For graphene
transistors with a channel length of 300 nm, the on-current and transconductance are degraded by
about 17.3% and 11.2%, respectively, because of self-heating. As a result of the coupling between
Klein tunneling, self-consistent electrostatics, and phonon emission, the heat is dissipated
throughout the whole channel region, resulting in a hot spot near the middle of the channel. With
lower energy phonons, the temperature rise is lower, and more percentage of heat is dissipated in
the channel region.

The self-heating effects on the channel length scaling were also studied. For short-channel devices,
with a channel length around 100 nm, it is in the quasi-ballistic transport region. The contact

525
thermal conductance dominates the in-plane thermal transport. Most of the heat is dissipated at the
contacts. The peak temperature can research 480 K. Selfheating effects and contact thermal
resistance play important roles on device characteristics of GFETs with a deep submicrometer
channel length.

The hysteresis of first and second generation BiLGFETs depends on the cycling range of the
backgate voltage and is caused most likely due to trapping and de-trapping of oxide charges from
the backgate oxide as well as capacitive gating, which affects the threshold voltage. The
fabrication method in combination with the device performance will allow a simple and low-cost
integration of graphene devices for nanoelectronical applications in a hybrid silicon CMOS
environment.

CONCLUSION

Nowadays there is a huge progress in the development of graphene transistors. because of missing
band gap, MOSFETs with large-area channels cannot be switched off and therefore are not suited
for logic applications. Hence they play a major role in RF applications than logic circuits and also
represent a unsatisfying drain current saturation behavior limiting the RF applications. Presently it
seems that the biggest advantage of graphene MOSFETs are thin channel and ultra-short scale
length.

REFERENCES
Akturk, et ai, J. App. Phys. 2008, 103,053702. [2] H. Wang, et ai, iEEE Electron Device Lett.
2010, 31, 9, 906-908.
L. Yu-Ming, et ai, Science, 2011,332,6035, 1294-1297. [4] J. A. Robinson, et aI, Appl Phys
Lett. 2011, 98, 053103.
M. J. Hollander, et ai, Nano Lett. 2011, 11, 3601-3607. [6] G. 1. Zebrev, et ai, Condens. Matter:
Mesoscale Nanoscale Phys. 2010.
J. H. Seol, I. Jo, A. L. Moore, L. Lindsay, Z. H. Aitken, M. T. Pettes, X. Li, Z. Yao, R. Huang,
D. Broido, N. Mingo, R. S. Ruoff, and L. Shi, Two-dimensional phonon transporin supported
graphene, Science, vol. 328, pp. 213216, Apr. 2010.
Y. Wu, Y.-M. Lin, A. A. Bol, K. A. Jenkins, F. Xia, D. B. Farmer, Y. Zhu, and P. Avouris,
High-frequency, scaled graphene transistors on diamond-like carbon, Nature, vol. 472, pp. 74
78, Apr. 2011.
V. Perebeinos and P. Avouris, Inelastic scattering and current saturation in graphene, Phys.
Rev. B, vol. 81, no. 19, pp. 195442-1195442-8, 2010.
Y. Lu and J. Guo, Role of dissipative quantum transport in DC, RF, and self-heating
characteristics of short channel graphene FETs, in Proc. IEEE IEDM, Dec. 2011, pp. 11.5.1
11.5.4.
I. Meric, C. Dean, A. F. Young, J. Hone, P. Kim, and K. L. Shepard, Graphene field-effect
transistors based on boron nitride gate dielectrics, in Proc. IEEE IEDM, Dec. 2010, pp. 23.2.1
23.2.4.
S. Ghosh, D. L. Nika, E. P. Pokatilov, and A. A. Balandin, Heat conduction in graphene:
Experimental study and theoretical interpretation, New J. Phys., vol. 11, p. 095012, Sep. 2009.
W. Jang, Z. Chen, W. Bao, C. N. Lau, and C. Dames, Thicknessdependent thermal
conductivity of encased graphene and ultrathin graphite, Nano Lett., vol. 10, pp. 39093913, Sep.
2010.

526
 M.-H. Bae, Z. Li, Z. Aksamija, P. N. Martin, F. Xiong, Z.-Y. Ong, I. Knezevic, and E. Pop,
Ballistic to diffusive crossover of heat flow in graphene ribbons, Nature Commun., vol. 4, p.
1734, Apr. 2013.

527