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One Mark Questions 06. The units of are
KT
(GATE - 97)
01. A P-type silicon sample has a higher 1
(a) V (b) V
conductivity compared to an n-type silicon (c) J (d) J/K
sample having the same dopant concentration.
TRUE/ FALSE (GATE - 94) 07. The intrinsic carrier concentration of silicon
sample at 300oK is 1.5 10 16 /m 3 . If after
02. The Probability that an electron in a metal
doping, the number of majority carriers is
occupies the fermilevel, at any temperature.
(> 0K) (GATE - 95) 5 10 20 /m 3 , the minority carrier density is
(a) 0 (b) 1 (GATE - 02)
(a) 4.50 10 /m 11 3
(b) 3.33 10 4 /m 3
(c) 0.5 (d) 1.0 (c) 5.00 10 20 /m 3 (d) 3.00 10 5 /m 3
03. The drift velocity of electrons in silicon 08. The band gap of silicon at 300 K is
(GATE - 95) (GATE - 02)
(a) is proportional to the electric field for all (a) 1.36 eV (b) 1.10 eV
values of electric field (c) 0.80 eV (d) 0.67 eV
(b) is independent of the electric field.
(c) Increases at low values of electric field and 09. n type silicon is obtained by doping silicon
decreases at high values of electric field with (GATE - 03)
exhibiting negative differential resistance. (a) Germanium (b) Aluminium
(d) Increases linearly with electric field at low (c) Boron (d) Phosphorus
values of electric field and gradually
saturates at higher values of electric field. 10. The impurity commonly used for realizing the
base region of a silicon n-p-n transistor is
04. In a P-type Si sample the hole concentration is (GATE - 04)
2.251015/cm3. The intrinsic carrier (a) Gallium (b) Indium
10 3
Concentration is 1.510 /cm the electron (c) Boron (d) Phosphorus
concentration is (GATE - 95)
(a) Zero (b) 1010/cm3 11. The primary reason for the wide spread use of
(c) 105/cm3 (d) 1.51025/cm3 silicon in semiconductor device technology is
(GATE - 04)
05. A small concentration of minority carries is (a) Abundance of silicon on the surface of the
injected into a homogeneous Semiconductor Earth.
crystal at one point. An electric field of 10V/ (b) Larger bandgap of silicon in comparison to
cm is applied across the crystal and this germanium.
moves the minority carries a distance of 1cm (c) Favorable properties of silicon dioxide
in 20 sec. The mobility (in cm2/v-sec) will (sio 2 )
be (GATE - 94) (d) Lower melting point.
(a) 1,000 (b) 2,000
(c) 5,000 (d) 500,000
12. A silicon PN junction at a temperature of 17. Which of the following is true?
20o C has a reverse saturation current of 10pA. (GATE - 08)
The reverse saturation current at 40o C for the (a) A silicon wafer heavily doped with boron
same bias is approximately. (GATE - 04) is a P substrate.
(a) 20 pA (b) 30 pA (b) A silicon wafer lightly doped with boron is
(c) 40 pA (d) 80 pA a P substrate.
(c) A silicon wafer heavily doped with arsenic
13. The band gap of silicon at room temperature is is a P substrate.
(GATE - 05) (d) A silicon wafer lightly doped with arsenic
(a) 1.3 eV (b) 0.7 eV is a P substrate.
(c) 1.1 eV (d) 1.4 eV
18. In an n-type silicon crystal at room
14. Under low level injection assumption, the temperature, which of the following can have
injected minority carrier current for an a concentration of 4 10 19 cm 3 ?
extrinsic semiconductor is essentially the (GATE - 09)
(GATE - 05) (a) Silicon atoms (b) Holes
(a) Diffusion current (c) Dopant atoms (d) Valence electrons
(b) Drift current
(c) Recombination current 19. Drift current in semiconductors depends upon
(d) Induced current (GATE - 11)
(a) Only the electric field
15. The concentration of minority carriers in an (b) Only the carrier concentration gradient
extrinsic semiconductor under equilibrium is (c) Both the electric field and the carrier
(GATE - 06) concentration
(a) Directly proportional to the doping (d) Neither the electric field nor the carrier
concentration. concentration gradient
(b) Inversely proportional to the doping
concentration. 20. A silicon bar is doped with donor impurities
(c) Directly proportional to the intrinsic ND=2.25 1015 atoms/cm3. Given the intrinsic
concentration. carrier concentration of silicon at T = 300 K is
(d) Inversely proportional to the intrinsic ni = 1.51010 cm3. Assuming complete
concentration. impurity ionization, the equilibrium electron
and hole concentrations are
16. The electron and hole concentration in an (GATE - 14)(Set2)
intrinsic semiconductor are n i per cm 3 at (a) n0 = 1.5 1016 cm3, p0= 1.5 105 cm3
300o K. Now, if acceptor impurities are
(b) n0 = 1.5 1010 cm3, p0= 1.5 1015 cm3
concentration of NA per cm3 (where NA >> ni),
the electron concentration per cm 3 at 300o K (c) n0 = 2.25 1015 cm3, p0= 1.5 1010 cm3
with be (d) n0 = 2.25 1015 cm3, p0= 1 105 cm3
(GATE - 07)
(a) ni (b) ni + NA
2
ni
(c) NA ni (d)
NA
21. A thin P type silicon sample is uniformly (a) band gap energy of silicon (Eg)
illuminated with light which generates excess (b) sum of electron and hole mobility in
carriers. The recombination rate is directly silicon (n + p)
proportional to
(c) reciprocal of the sum of electron and hole
(GATE - 14)(Set3)
mobility in silicon (n + p)-1
(a) The minority carrier mobility
(b) The minority carrier recombination (d) intrinsic carrier concentration of silicon
lifetime (ni)
(c) The majority carrier concentration 25. The cut-off wavelength (in m) of light that
(d) The excess minority carrier concentration can be used for intrinsic excitation of a
semiconductor material of bandgap
22. At T = 300 K, the hole mobility of a Eg = 1.1eV is _________.
semiconductor p = 500 cm2/V- s and (GATE - 14)(Set4)
kT
26 mV. The hole diffusion constant Dp
q
Two Marks Questions
in cm2/s is ____.
(GATE - 14)(Set3)
01. Consider two energy levels: E1, E eV above
23. At T = 300 K, the band gap and the intrinsic the Fermi level and E2, E eV below the Fermi
carrier concentration of GaAs are 1.42eV and level. P1 and P2 are respectively the
106cm-3, respectively. In order to generate Probabilities of E1 being occupied by an
electron hole pairs in GaAs, which one of the electron and E2 being empty. Then
wavelength (c) ranges of incident radiation, (GATE - 87)
is most suitable? (Given that: Plancks (a) P1 > P2
constant is 6.62 10-34 J-s, velocity of light is (b) P1 = P2
(c) P1 < P2
3 1010 cm/s and charge of electron is 1.6
(d) P1 and P2 depend on number of free
10-19 C)
electrons
(GATE - 14)(Set4)
(a) 0.42m c 0.87m 02. In an intrinsic Semiconductor the free electron
(b) 0.87 m < c < 1.42 m concentration depends on (GATE - 87)
(c) 1.42 m < c < 1.62 m (a) Effective mass of electrons only
(d) 1.62 m < c < 6.62 m (b) Effective mass of holes only
(c) Temperature of the Semiconductor.
24. In the figure, ln(i) is plotted as a function of (d) Width of the forbidden energy band of the
1/T, where i is the intrinsic resistivity of semiconductor.
silicon, T is the temperature, and the plot is 03. According to the Einstein relation, for any
almost linear. (GATE - 14)(S4) semiconductor the ratio of diffusion constant
to mobility of carriers (GATE - 87)
ln(i) (a) Depends upon the temperature of the
semiconductor.
(b) Depends upon the type of the
semiconductor.
(c) Varies with life time of the
1/T semi conductor.
(d) Is a universal constant.
23. Consider a silicon sample dopped with 02. Show that the minimum conductivity of an
ND = 1 1015/cm3 donor atoms. Assume that extrinsic silicon sample occurs when it is
the intrinsic carrier concentration slightly p type calculate the electron and hole
ni = 1.5 1010/cm3. If the sample is concentration when where the conductivity is
additionally doped with NA = 1 1018 /cm3 minimum given that n = 1350 cm2/v-sec,
acceptor atoms, the approximate number of p = 450 cm2 /v-sec, and the intrinsic carrier
electrons/cm3 in the sample, at T = 300K, will Concentration, ni = 1.51010 cm-3
be ________. (GATE - 14)(Set4) (GATE - 91)
Assume:
(i) The mobility of minority and majority
Ten Marks Questions carries to be the same.
(ii) KT = 26mV at room temperature.
01. In a semi conductor at room temperature
(300oK), the intrinsic Carrier concentration
and resistivity are 1.5 1016 / m3 and 2103
-m respectively. It is converted into an
extrinsic semi conductor with a doping
concentration of 1020/m3 for the extrinsic
semiconductor, calculate the
(GATE - 90)
(a) Minority carrier concentration
(b) Resistivity of extrinsic semiconductor
(c) Shift in fermilevel due to doping
(d) minority concentration if intrinsic carrier
concentration doubles