Escolar Documentos
Profissional Documentos
Cultura Documentos
: COMPACT AC MODELING AND PERFORMANCE ANALYSIS OF THROUGH-SILICON VIAS IN 3-D ICs 3411
Fig. 8. Calculation result for (a) open and (b) short structures of Fig. 5(a) and
the comparison with HFSS [30] (insets show the schematic of the structure). Fig. 9. Cross-sectional view of a closely packed CNT bundle used as TSV
The TSV height is 54 m; the thickness of silicon substrate 2 is 50 m; SiO2 metal. NCN T is the total number of CNTs in the bundle.
is filled between the substrates, which are separated by 12 m; via metal is
assumed to be Cu (1.7 -cm); and all the other parameters are the same as in
Fig. 6. To extract Yopen and Zshort in HFSS, two lumped ports are applied at
both the bottom (ports 1 and 2) and top (ports 3 and 4) of the TSV pair, which
form a two-port network: Yopen = 1/Z11 and Zshort = 1/Y11 . Y11 is the
current flowing out of port 1 divided by the voltage difference between ports 1
and 2, when the voltage difference between ports 3 and 4 is artificially made to
be zero.