C945

NPN Transistors TO-92

P b Lead(Pb)-Free

1. EMITTER 1
2. COLLECTOR 2
3
3. BASE

0.4

Junction Temperature Tj +150 C

Storage Temperature TSTG -40 to + 150 C

WEITRON 1/4 08-Feb-06

http://www.weitron.com.tw
 C945
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain
VCE=6.0V, IC=1mA hFE1 70 - 700 -
VCE=6.0V, IC=0.1mA hFE2 40
Collector-Emitter Saturation Voltage -
VCE(sat) - 0.3 V
IC=100mA, IB=10mA
Base-Emitter Voltage
VBE(sat) - - 1.0 V
IC=100mA, IB=10mA
TransitionFrequence
fT 200 - - MHz
VCE = 6V, IC = 10mA, f = 30MHz
Collector Output Capacitance
Cob - - 3.0 pF
VCB = 10V, IE = 0, f = 1MHz
Noise gure
NF - 4.0 10 dB
VCE = 6V, IC = 0.1mA, Rg = 10k, f = 1KMHz

CLASSIFICATION OF hFE1

Rank O Y GR BL
Range 70-140 120-240 200-400 350-700

WEITRON 2/4 08-Feb-06

http://www.weitron.com.tw
 C945

FIG1. Total Power Dissipation FIG.2 Collector Current vs Collector

vs Ambient Temperature to Emitter Voltage

FIG.3 Collector and Bade Saturation Voltage FIG.4 Gain Bandwidth Product vs
vs Collector Current Emitter Current

WEITRON 3/4 08-Feb-06

http://www.weitron.com.tw
 C945

TO-92 Outline Dimensions unit:mm

TO-92
Dim
H

Min Max
C A 3.30 3.70
B 1.10 1.40
C 0.38 0.55
D 0.36 0.51
E
L

4.40 4.70
G 3.43 -
H 4.30 4.70
J
J 1.270TYP
K
K 2.44 2.64
G
L 14.10 14.50
B
A
D

WEITRON 4/4 08-Feb-06

http://www.weitron.com.tw