MRD500 (SILICON) MRDS510 eiecton of visible (© Untra Fost Response PIN SILICON PHOTO DIODE {61.008 Tyo) isigned for application in tsar detection, ight demodulation, nea Infrared lghtamiting diodes, shatt or postion encoders, switching and logic cireuits, or any design requiring Fadlation sanitivity,ultre highspeed, and stable characterises. 100 VOLT PHOTO DIODE PIN SILICON 100 MILLIWATTS Wem? Min) conve Lets) truar cuss! + Hid Serstvty — Mabe (03 nalnlen? Min) cate ot ‘cate So ‘© Popular TO-18 Type Package for Easy Handling and Mounting fa © Sensitive Throughout Visible and Near infrared Spectral Range es + ‘or Wide Application rt © Annutor Pessivated Structure for Stability and Reliability l | Pu cammaoe a = ‘Symtot vee ‘Une vay" Foust Owice Dipaton @T a= 25°C Po 700 7 Ee {TvPICAL OPERATING CIRCUIT \ ord 1259MRDS500, MRD510 (continued) STATIC ELECTRICAL CHARACTERISTICS (T, = 25°C unless otherwise noted) Caectiic Fiano. | Symbet [Min | Tr | Max | Une re Carn rs 7a (vq 20, RL = 1.0mepotn: Not 2) Tansee a = - 20 IE Tan 100° _ Bu = “ : eves Breakdown Votoge = woo | 200 vere Uige 1Oua) | |Focwrd Voter VF = = va [von] [cies somar Ses Restor = % = 7 aa] ite= 80.ma) Tou Goonies = a 5 a ca (Wan 20 Vit LOM) l OPTICAL CHARACTERISTICS (Ta = 25°C) ~ Cheseernie oe ee a Fadiain Sri a | paian Wns 20 Note) tuR0s00 12 1s : _ tnmosio | 2042 oa | aw = Seosivey ot 08 wm Bin 08 am [aaron {a= 20, Note 3 sn0500 i = 6s e twnosio | 1s = ipoes Tine ‘wees 19 (p= 20, Ry = 50 abel = ‘Waring of Pane Sona Reon 7 [os = oe —- 2» Macnured underdark sanditions. (Ha 1260MRD500, MRD510 (continued) TYPICAL ELECTRICAL CHARACTERISTICS FIGURE 2 — IRRADIATED VOLTAGE — CURRENT GHARACTERISTIC FOR MRDSOO x a FIGURE 4 — DARK CURRENT ves TEMPERATURE FIGURE 6 ~ CAPACITANCE warms VOLTAGE i echeAcrANce to. tanK cuNRENT 1 HT CURRENT 1261 FIGURE 3 = IRRADIATED VOLTAGE ~ CURRENT FIGURE S ~ DARK CURRENT wernt REVERSE VOLTAGE aus| La cS ° | a) Va, REVERS VOLTAGE|VOLTS) FIGURE 7 — RELATIVE SPECTRAL RESPONSE teMRD500, MRD510 (continued) ave cr eg MADSOO AND MRDS10 OPTOELECTRONIC DEFINITIONS, CHARACTERISTICS, AND RATINGS Reverse Breakdown Voltage ~ The minimum de SR_Radiation Sensitivity GuA/mW/em2) ~ The ratio reverse breakdown voltage at stated diode current ‘of photo-induced current to the incident radiant and ambient temperature energy measured at the plane of the lens of the photo device under stated conditions of radiation oleae ‘ux density (H), reverse voltage, load resistance, Radiation Flux Density (Irradiance) [mWjem2] — faci sable user ‘The total incident radiation energy measured in y mibient Temperature power per unit ares. eens Dark Curent — The maximum reverse leakage ‘TS Junction Temperature current through the device messured under dark Tstg__ Storage Temperature conditions, (HO), with 2 stated reverse voltage, Ve_—_-Forward Voltage ~ The maximum forward voltage Joad resistance, and ambient temperature. drop across the diode at stated diode curcent and Power Disipation ambient temperature. Series Resistance - The maximum dynamic series VR__-Reverse Voltage ~ The maximum allowable value resistance measured at stated forward current and ‘of de reverse voltage which can be applied to the ambient temperature. ‘device atthe rated temperature Aum) Wavelength of peak spectral response in micro opto bevices [AN-440~ THEORY AND CHARACTERISTICS OF PHOTO ‘TRANSISTORS {A briet history ofthe photoelectric eects discussed, followed by 4 comprehensive analysis ofthe actin bulk semiconductors, pn junetions and phototran- Sisfors. A model is presented for the phototransstor. Static and twansient data for the MRD30O provide typical phototransistor characteristics. Appendices provide a discussion of the relationship of irradiation ‘and Hlumination and define terms specifically related to phototransistors, ‘AN-508 Applications of Phototransistors in Electro: 1262 Optic Systems This note reviews phototransstor theory, char acteristics and terminology, then discusses the design of electrooptic systems using device information and geo- metric considerations. It algo includes several circuit designe that are suited to de, low-frequency and high frequency applications