International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056

Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072

Re-configurable Microstrip patch antenna applicable for Ultra wide

(UW) band

Arita Basumatary1, Anil Kumar2, Rajeev Paulus3 , A.K. Jaiswal4 , Ekta Chauhan5

1M.Tech Scholar, Faculty of Electronics & Communication Engineering, SIET SHUATS, U.P, India
2,3Assistant Professor, Dept. of Electronics & Communication Engineering, SIET SHUATS, U.P., India
4Head of the Dept. Electronics & Comm. Engineering, SIET SHUATS, U.P., India
5Dept. of Physics, SIET SHUATS, U.P., India.

---------------------------------------------------------------------***---------------------------------------------------------------------
Abstract: The designed antenna is about elliptical Microstrip
patch antenna with a slot where two diodes are placed on the
slot. The design of the antenna is based on diode conditions ON
and OFF. This antenna is tested and simulated and the gain of
antenna is being improved for different conditions at two
frequencies 8.5306GHz and 8.7143GHz. Slot antenna works in
single band and multiband frequency. The antenna has a
substrate designed on FR4epoxy. A variation in parameters
like radiated power, gain and directivity is achieved. Working
and testing is done by utilizing simulator Ansoft HFSS. The
results are checked and evaluated for the proposed antenna.
Key Words: Reconfigurable, Elliptical, Ultra Wide band,
Slots, Diodes.
1. INTRODUCTION
More than the past period of years the antennas have played
very decisive role in the area of wireless communication.
With the growing and increasing of the broadband
technologies microstrip patch antenna is mostly favored. [1]-
[3] It is utilized in numerous areas like satellite
communication, aircrafts, missiles, GPS system and
broadcasting. Certain credits of antenna are low cost light
weight low profile, small size, polarization.[4][6] Basically
the advancement of dual band antennas for the extension in
the wired antennas was done . The configuration of internal
handset antennas are accomplished by rectifying the size of
small antenna.[6] With broadening of the cellular
communication the dual frequency came into scenario
having a useful benefit comparatively exquisite electric
aspects, compressed in geometry, cheap and adequate
function that can be established for a single coaxial
feeding.[7][8] Likewise, the Reconfigurable Antennas has a
great significance in wireless communication consist
extensively for defense and in the market. The antenna could
be reconfigured making use of the diodes.[9] It has the
potential to modify the operating frequency, radiation
pattern & polarization in form of real time.[11]Moreover,
when the antennas are Reconfigurable the polarization
involves linear, right- hand & left- hand polarization.[12]
The extreme hindrances of patch antenna bandwidth is
restricted, gain is not high, little efficiency, lesser power and
inadequate polarization. Therefore, in order to conquer the
indicated numerous obstacles few resolutions have been
2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal
recommended for instance slots, coaxial probe feeding
techniques and diodes. [1-2]
Furthermore another specific approach is the utility of
peculiar model of the patch which aims resonance at
frequency & hides surface current waves considering modes.
Since the relevance of the applicability of Elliptical Patch
antenna came into existence the consequence of the fact that
category regarding insignificant character sketch of antenna
have larger capacity. We can also regulate contrasting shapes
in the manner of circular, rectangular, square, helical &
elliptical shape.[2] Considering the polarization of ellipse the
tangential part of the elliptical angle shows the proportion of
minor axis to major axis.[10] Including the consideration of
slots where diodes are positioned the gain, low permittivity
& bandwidth of patch antennas can be progressed. Through
controlled slots, Patch antennas get impacted. Diodes and
capacitor have a positive display on patch antenna.[4]
Henceforth this conditions can execute the demands for the
evolution of wireless technologies.
1.1 Antenna Configuration
In this antenna the dimension of the substrate is 30mm x
30mm x 1.8mm at position -15, -15, 0. The material used for
the substrate is FR4epoxy. Dimensions are 0mm x 0mm x
1.8mm where radius is taken as 7mm and ratio 2. The
elliptical patch has been divided into two section by a slot and
in between the divided section two square slots are notched
placing two diodes into square shape. The material of the
diode taken is copper. Both the dimension of diode is 2mm x
2mm x 1mm. The copper diodes behaves as a switch. The
coaxial feeding is terminated using cylinder 2 and cylinder 3
as pec. Slot with two diodes are attached to the patch.
| Page 1650
 International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072

substrate -2

Return Loss i.e. S11 in dB

-4

-6

-8

d1 -10

feed -12
patch
-14

d2 -16

-18

-20
2 4 6 8 10
Frequency in GHz

(a)
50

40

30
vswr in dB

20

10

Fig-1: Structure of the Antenna 0

0 2 4 6 8 10
2. Tables, Simulations and Results Frequency in GHz

Table -1: Switching operation of diodes (b)

Condi Return VSW Gain Direc Radiati 5

tions loss(dB R (dBi tivity on 0

of ) ) (dB) (GHz)
Gain in dB

Diode
-5

D1 & - 2.664 2.70 6.181 8.5306 -10

D2 16.3520 7 20 3 -15

ON
D1 - 3.153 3.09 6.400 8.7143
-20

ON & 14.9163 3 43 5 0 2 4 6
Frequency in GHz
8 10

D2
OFF (c)
D1 -18.08 2.178 2.85 6.142 8.7143 10
OFF & 3 68 7
D2 5

ON
D1 & - 2.939 3.14 6.342 8.7143
Directivity in dB

D2 15.5134 6 75 0
OFF -5

-10

-15

0 2 4 6 8 10
Frequency in GHz

(d)

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 International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072

0 5
25
330 30
20
15 0
10
300 60
5

Gain in dB
0 -5
-5
-10
270 90
-10 -10
-5
0
5 -15
240 120
10
15
-20
20
210 150
25
180 0 2 4 6 8 10
Radiation at Frequency= 8.5306 and phi=0 deg.
Radiation at Frequency= 8.5306 and phi=90 deg. Frequency in GHz

(e)
(c)
Fig-3: Diode D1 and D2 both in ON condition, (a) Return 10

loss (b) vswr, (c) Gain, (d) directivity, and (e) Radiation
pattern 5

The Figure-3 shows that when both the diodes are ON the Directivity in dB
0

values are as follows R1 =85 ohm; L1=0.1nH; C1= not -5

assigned; R2=85ohm; L2=0.1; C2= not assigned which shows

the return loss as -16.3520dB, VSWR 2.6647, Gain of the -10

antenna is 2.7020 and the Directivity is 6.1813dBi at -15

radiation frequency 8.5306GHz.

0 2 4 6 8 10
Frequency in GHZ

(d)
2

-2

-4
0
Return Loss in dB

25
330 30
-6 20
15
-8
10
300 60
-10 5
0
-12
-5
-14 -10
270 90
-10
-16
-5
0 2 4 6 8 10 0

Frequency in GHz 5
240 120
10
15
(a) 20
210 150
25
180
50
Radiation at Frequency= 8.7143 and phi=0 deg.
Radiation at Frequency= 8.7143 and phi=90 deg.

40 (e)

30 Fig-3: Diode D1 on and D2 in off condition, (a) Return loss

vswr in dB

(b) vswr, (c) Gain, (d) directivity, and (e) Radiation pattern
20

Figure-3 shows when Diode d1 ON and d2 OFF the values are

10
R1= 85ohm; L1=0.1nH; C1= not assigned; R2= 85kohm; L2=
0.1; C2=100pF. The return loss S11 is -14.9163, VSWR
3.1533, Gain of the antenna is 3.0943, Directivity is 6.4005 at
0
0 2 4 6 8 10
Frequency in GHz
radiation frequency 8.7143GHz.
(b)

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 International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072

0
0
-2 25
330 30
Return Loss i.e. s11 in dB

-4
20
15
-6
10
-8 300 60
5
-10 0
-12 -5

-14 -10
270 90
-10
-16
-5
-18
0
-20 5
0 2 4 6 8 10 240 120
10
Frequency in GHz
15
20
(a) 25
210 150
180
Radiation at Frequency=8.7143 and phi=0 deg.
50 Radiation at Frequency=8.7143 and phi=90 deg.
(e)
40

30
Fig4: Diode D1 off and D2 in on condition, (a) Return loss
(b) vswr, (c) Gain, (d) directivity, and (e) Radiation pattern
vswr in dB

20

Figure- 4 shows for condition D1 OFF and D2 ON the values

10 are R1=85 kohm; L1= 0.1nH; C1= 100pF; R2=85ohm; L2=
0.1; C2= not assigned which indicates the antenna return
0
loss as -18.08 dB, VSWR 2.1783, Gain 2.8568dBi and
0 2 4 6 8 10 Directivity 6.1427dBi at radiation frequency 8.7143GHz.
Frequency in GHz

(b) 2

-2
Return loss i.e. S11 in dB

5
-4

0 -6

-8
Gain in dB

-5
-10

-12
-10
-14

-15 -16

0 2 4 6 8 10
-20 Frequency in GHz

(a)
0 2 4 6 8 10

Frequency in GHz

50

(c)
40
10

30
vswr in dB

20
Directivity in dB

10
-5

0
-10
0 2 4 6 8 10
Frequency in GHz
-15

0 2 4 6 8 10 (b)
Frequency in GHz

(d)

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 International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
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the properties of the designed antenna comparatively return

5
loss, vswr, gain, directivity and radiation frequency. The
0
termination showing return loss is analyzed in terms of S-
parameters S11. Fig 1 demonstrates the purposed antenna of
Return loss S11 as -16.35dB at 8.53GHz. The VSWR for first
Gain in dB

-5

-10 condition is 2.6. Gain of the antenna denotes as 2.7dBi and

the directivity 6.1813dB.
-15

-20 The Fig 2 presents the 2nd condition of diode operation

0 2 4 6 8 10 causing the value of the Return loss S11 at 8.7GHz that is -
Frequency in GHz
14.9163dB. VSWR obtained is 3.15, the antenna Gain
acheived is 3.09dBi and Directivity becomes 6.4dB. Likewise,
(c)
Fig 3 and Fig4 radiates at similar resonance frequency
10
8.7143GHz due to the value of capacitance determined. The
5
frequency increments from 8.5GHz to 8.7GHz but with
dissimilar parameters. The Return loss for 3rd and 4th
conditions are -18.08dB and -15.5dB. The Gain and
Directivity in dB

-5
directivity of the antenna becomes better from the first
condition. In addition, the diode conditions the table displays
-10 the details of switching operation activating in a patch
antenna. It is clearly revealed that when the Diode D1 is ON
and D2 is OFF a good return loss, VSWR, Gain and Directivity
-15

0 2 4 6
Frequency in GHz
8 10
is derived. Return loss S11 -18.08 dB radiating at 8.7GHz
frequency has a satisfying VSWR of 2.1 whose antenna gain
(d) is 2.8dBi and directivity of 6.1427dB. This is accessed by
unceasingly harmonizing the capacitance of the diode. The
Return loss for the last condition S11 at 8.7GHz frequency is -
25
0
15.5dB. Also, the radiation patterns shows the polarization
330 30
20 of the antenna.
15
10
5
300 60
REFERENCES
0
-5 1. Ridhi Gupta and Sanjay Gupta," Shifted Elliptical
-10
-5
270 90
Slot in Microstrip Patch Antenna for increasing BW
0 and
5 Gain."IJARCEE Vol.2, Issue 4,April 2013.
10 240 120
2. AjinkyaPingale," Design of Elliptical Microstrip
Antenna for Ultra wide Band Applications." IJETR,
15
20
25
210 150
vol.3, Issue, March 2015.
3. PratibhaSekra, SumitaShekhawat and ManojDubey,"
180
Radiation at Frequency=8.7143 and phi=0 deg.
Radiation at Frequency=8.7143 and phi=90 deg.
Design of circulatory polarized edge truncated
(e) elliptical patch antenna with improved
performance,"Indian Journal of Radio & Space
Physics, vol.40,pp227-333, August 2011.
Fig-5: Diode D1 and D2 both in ON condition, (a) Return 4. Vijay Sharma & Deepak Bhatnagar," Radiation
loss (b) vswr, (c) Gain, (d) directivity, and (e) Radiation Performance of an Elliptical Patch Antenna with
pattern three orthogonal Sector Slots," Romanian Journal of
Infor. Science & Tech, vol. 14, No.2, 123-130, March
When both the diodes are OFF the values of the antenna are 2011.
R1=85kOhm; L1=0.1nH; C1=100pF; R2=85kOhm; L2=0.1nH; 5. RitikaTandon&Tejbir Singh," Varactor diode Loaded
C2=100pF the figure-5 shows the return loss -15.5134dB, Reconfigurable Patch Antenna with Adjustable
VSWR as 2.9396, Gain of the antenna 3.1475dBi, Directivity Slots," IJCA(0975-8887), vol 128, No.14, October
6.3420dBi at radiation frequency 8.7143GHz. 2015.
6. Zi Dong Liu & Peter S. Hall," Dual-Frequency Planar
3. CONCLUSIONS Inverted-F Antenna," IEEE Trans. on Antennas and
Prop., vol. 45, No. 10, Oct 1997.
The behavior of the diode towards elliptical patch are
studied for varied conditions of diode switching detecting
2017, IRJET | Impact Factor value: 5.181 | ISO 9001:2008 Certified Journal | Page 1654
 International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056
Volume: 04 Issue: 07 | July -2017 www.irjet.net p-ISSN: 2395-0072

7. Mingwu Yang & Yinchao Chen," A Novel U-shaped

Planar Microstrip Antenna for Dual-Frequency Mrs. Ekta Chauhan, Assistant
Mobile Telephone Communications," IEEE Trans. on Professor, Dept of Physics,
Antennas and Prop.,vol.49, No. 6, June 2001. SIET, SHUATS, Allahabad
8. Zhi zhang Chen & Acep D. Ganjara," A Dual L-
Antenna with a Novel Tuning Technique for Dual
Frequency Applications," IEEE Trans. on Antennas
and Prop, vol. 50, No.3, March 2002.
9. Mohammad Ali & T.M. Sayem," A Reconfigurable
Stacked Microstrip Patch Antenna for Satellite and
Terrestrial Links," IEEE Trans. on Vehicular
Technology, vol.56, No. 2, March 2007.
10. Sujatha Ramanujan, Govind P. Agrawal, Fellow,IEEE,
James M. Chwalek and Herbert Winful, Fellow,
IEEE" Elliptical polarization Emission from GaAlAs
Laser Diodes in an External Cavity Configuration,"
IEEE Journal of Quantum electronics,Vol. 32, No.2,
Feb 1996.
11. Pawan Pujari & Kirti Vyas," Reconfigurable Antenna
(Circular Microstrip Patch Antenna) using Varactor
Diodes," IJARCS, vol.4, No.3, March 2013.
12. Yu- Ming Lee & Shen Cherng,"A Novel Design of
Reconfigurable Annular Slot Active Patch," PIERS
Proceedings, Taipei, March 2013.

BIOGRAPHIES

Arita Basumatary, M.Tech

st scholar, Dept. of Electronics
& Communication, SIET,
SHUATS, Allahabad.

Dr. Anil Kumar, Assistant

Professor, Dept. of Electronics
& & Communication, SIET,
SHUATS, Allahabad.

Dr. Rajeev Paulus, Assistant

Professor, Dept. of Electronics
& Communication, SIET,
SHUATS, Allahabad

Prof. A.K. Jaiswal, Head of the

Dept. of Electronics & Comm.
SIET, SHUATS, Allahabad

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