Escolar Documentos
Profissional Documentos
Cultura Documentos
' A
) nA + t rA = 0
Mass units: (
) n + B r = 0
B B
* t
rA = rB
& c A
Molar units: ( NA + t RA = 0 Is R rate of produc:on or
A
Ficks rst law is valid provided that the ux (jA or JA) is dened
rela:ve to the mixture velocity (mass or molar-average velocity):
J A = cA (v A V)
c A v A + c B v B NA + NB
V= =
cA + cB c
The molar ux for species A is given as:
NA = cDAB y A + y A (NA + NB )
= cDAB y A + c A V
We will come back to this equa:on in the next sec:on on dieren:al mass-transfer equa:on 2
Dieren6al Mass-Transfer Equa6on
& c A
( NA + RA = 0
' t
()N = D c + c V
A AB A A ( cA V) = ( cA ) V + cA ( V)
c A
DAB c A + (c A V) + RA = 0
t
Dc A DT
If no reac:on, diusion
2 coecient and density are
= DAB c A (C.f. )
= 2T
Dt constant
Dt
c A T
= DAB 2c A (C.f. )
= 2T for no uid mo:on
t
t
Ficks second law of diusion Fouriers second law of heat conduc:on
3
Common Boundary Condi6ons
pAs = x A PA
Assump:ons:
1) The reac:on occurs only at the surface of growing Si thin lm. No homogeneous
reac:on of silane within the diusion zone, RA = 0.
2) The gas space in the diusion zone is not externally mixed. Molecular diusion
dominates.
3) The feed gas provides silane in high excess rela:ve to that consumed by reac:on.
Silane concentra6on in the gas space at the diusion-zone boundary is constant.
4) The ux of silane is one-dimensional along z.
5) The thickness of the Si lm is very thin rela:ve to . is constant.
6) The mass transfer process within the diusion zone is at steady state.
6
Example 1
The general dieren:al equa:on for mass transfer in terms of rec:linear coordinates is
c
N A + A RA = 0
t
Based on the assump:ons: 1) steady state, 2) 1-D ux, 3) RA = 0, the equa:on could be
reduced to
dNA, z
=0
z
Ficks ux equa:on for the 1-D ux of silane through a binary mixture in the gas phase
Recall: N = D c + y N + N dyA
A( A B) NA, z = cDAB + yA(NA, z + NB, z )
A AB A
dz
Need to nd this rst. How?
Species A: Silane vapor (SiH4). Species B: H2
From the reac:on stoichiometry,
N A,z 1 mol of SiH4 reacted 1
= =
N B,z 2 mol of H2 formed 2 NB, z = 2NA, z
7
Example 1
The Ficks ux equa:on becomes
dyA cDAB dyA
NA, z = cDAB + yA(NA, z 2NA, z ) =
dz 1+ yA dz
Boundary condi:ons:
1) At the Si lm surface, z = , yA = yAs
2) At the diuser, z = 0, yA = yAo
yAs
cDAB
NA, z dz = dyA Is N a func:on of z? Why (not)?
yAo 1+ yA
A,z
0
If T and P are constant, then the total molar concentra:on of the gas, c = P/RT , is constant.
If the diusion coecient DAB is also constant,
cDAB 1+ yAo
NA, z = ln( )
1+ yAs
8
Dieren6al Mass-Transfer Equa6on
If species B is stagnant (non-diusing) within
the diusion cell. What happen to NB,z?
Show that:
cDAB (1 yA2 )
N A,z = ln
z2 z1 (1 yA1 )
9
Dieren6al Mass-Transfer Equa6on
Show that: cDAB (1 yA2 )
N A,z = ln
z2 z1 (1 yA1 )
c
N A + A RA = 0
t
N = cD y + y (N + N )
A AB A A A B
cDAB dyA
N A,z =
1 yA dz
z2 yA2 1
z1
N A,z dz = cDAB
yA1
1 yA
dyA
Is NA,z a func:on of z? Why (not)?
cDAB 1 yA2
N A,z = ln
z2 z1 1 yA1
10
Example 2
A vapor degreaser (as shown) is used for cleaning
metal parts. Liquid solvent rests at the bo\om of
the degreaser tank. A hea:ng coil immersed in the
solvent (trichloroethylene, TCE) vaporizes a small
por:on of the solvent. What is the TCE emission
rate (in kg/day) to the surrounding atmosphere?
The tank has a diameter of 2 m and a height of 5 m.
The solvent level height is kept constant at 0.2 m.
The solvent and headspace temperatures are
constant at 35 C. The pressure is 1 atm and the air
is stagnant. TCE has a molecular weight of 131.4
kg/ kmol, a vapor pressure of 0.152 atm at 35C,
and a mass diusivity of of 0.088 cm2/s through air.
cDAB (1 yA2 )
N A,z = ln
z2 z1 (1 yA1 )
11
Example 2
The total molar concentra:on of the gas, c is determined from the ideal gas law.
P 1atm kmol
c = = = 0.0396
RT m 3 atm m3
0.08206 (273+ 35)K
kmol K
The mole frac:on of TCE vapor at the solvent surface (yA1) is determined from the vapor
pressure of the solvent at 35C
PA 0.152 atm
yA1 = = = 0.152
P 1 atm
At the exit of the degreaser tank, the mole frac:on of TCE vapor is taken as zero. yA2=0.
The path length for diusion
z2 - z1 = 5.0m 0.2m = 4.8m N = cDAB ln (1 yA2 )
A,z
The ux of TCE vapor from the degreaser is z2 z1 (1 yA1 )
kmol
(0.0396 3 )(0.088
cm 2 1m 2
)
NA, z =
m s (100cm) 2
ln(
1 0
) = 1.197 10 8
kmol TCE
4.8 m 1 0.152 m2 s
The TCE emission rate (WA)
D 2 8 kmol TCE (2m)
2
131.4kg TCE 3600s 24h
WA = NA, z = 1.197 10 2
( )( )
4 m s 4 kmol TCE 1h 1day
kg TCE
= 0.427 12
day
How about the concentra6on prole?
dN A,z
=0
dz ln ((1 yA2 ) (1 yA1 )) ln ((1 yA1 ) (1 yA ))
=
N = cDAB dyA z1 z2 z z1
A,z 1 yA dz 1 yA z z1 1 yA2
ln = ln
d 1 dyA 1 y A1 z 2 z1 1 y A1
=0
dz 1 yA dz zz1
1 yA 1 yA2 z2 z1
1 dyA =
=
1 C 1 y A1 1 y A1
1 yA dz
ln(1 yA ) = C1z + C2 (1)
ln(1 y ) = C z + C (2)
A1 1 1 2
ln(1 yA2 ) = C1z2 + C2 (3)
ln(1 yA2 ) ln(1 yA1 ) ln ((1 yA2 ) (1 yA1 )) from (2) (3)
C1 = =
z1 z2 z1 z2
ln ((1 yA1 ) (1 yA ))
C1 = z z1
from (1) (2)
13
Pseudo-Steady-State Diusion
A,L
DAB =
2M A c ln(yB2 yB1 )t
( zt
2
zt0 )
2
15
Pseudo-Steady-State Diusion
cDAB yB2
Recall: N A,z = ln
z y
B1
A,L dz cDAB yB2
N A,z = = ln
M A dt z yB1
A,L zt yB2 t
MA
zt0
zdz = cDAB ln
yB1
0 dt
A,L 2 2
2M A
( zt z t0 ) = cDAB ln ( yB2 yB1 ) t
A,L
DAB =
2M A c ln(yB2 yB1 )t
( zt2 zt20 )
16
Example 3
A B
As shown in the gure above, assuming that the diusion of O2 through the SiO2 lm
limits the oxida:on process, develop a model to predict the thickness of the SiO2 layer, ,
as a func:on of :me at 1000 C.
Physical proper:es:
Density of solid SiO2, B=2.27 g/cm3
Molecular weight of SiO2, MB = 60 g/mol
Molecular diusion coecient of O2 in SiO2 (1000 C), DAB = 2.7 x 10-9 cm2/s
Maximum solubility of O2 in SiO2, cAs = 9.6 x 10-8 mol/cm3
17
Example 3
Assump:ons:
1) The oxida:on of Si to SiO2 only occurs at the Si/SiO2 interface.
2) The O2 in the gas phase above the wafer represents an innite source for O2 transfer.
3) The rate of SiO2 forma:on is controlled by the rate of molecular diusion of O2
(species A) through the solid SiO2 layer(species B) to the unreacted Si layer.
4) The reac:on is very fast, CA=0.
5) 1-D ux
6) Pseudo-steady state.
7) Overall thickness of the wafer does not change.
8) The process is isothermal.
18
Example 3
The general dieren:al equa:on for mass transfer
dNA, z
cA =0 Why RA = 0?
NA + RA = 0
t dz
Ficks ux equa:on for 1-D diusion of O2 (species A) through crystalline solid SiO2
(species B)
dcA dcA
NA, z = DAB + yA (NA, z + NB, z ) = DAB + yA NA, z
dz dz
The concentra:on of molecular O2 in the SiO2 layer is dilute enough that yA term is
negligible. dcA
N A, z DAB
dz
0
As NA is constant along z
0 NA, zdz = DAB cAs dcA
DAB cAs
N A, z =
19
Example 3
However, this process is operated under pseudo-steady state assump:on. The
thickness will increases slowly with :me. In order to discover how increases with
:me, consider the unsteady-state material balance for SiO2 within the wafer.
BS
d( )
NA, z S = MB
dt
B is the density of solid SiO2 (2.27 g/cm3), MB is the molecular weight of SiO2 layer
(60 g/mol), S is the surface area of the wafer. DAB cAs
NA, z =
Combine the material balance with the ux equa:on
B d DAB cAs
=
MB dt
Ini:al condi:on: t = 0, = 0.
t
MBDAB cAs
d = B dt
0 0
2MBDABcAs
= t
B 20
Example 4
A uidized coal reactor has been proposed for a new power plant. The process is
operated at 1145 K and is limited by the diusion of oxygen to the par:cle surface.
Assume that the coal is pure solid carbon with a density of 1.28 x 103 kg/m3 and the
par:cle is spherical with an ini:al diameter of 1.5 x 10-4 m, surrounded by air (21% O2
and 79% N2). Diusivity of oxygen through the gas mixture is: 1.3 x 10-4 m2/s. If pseudo-
steady state is assumed, calculate the :me necessary to reduce the diameter of the
par:cle to 5 x 10-5 m.
dyO2
N O2 ,r = cDO2 mix + yO2 (N O2 ,r + N CO2 ,r + N N2 ,r )
dr
yO2
R
N O2 ,r dr = yO2S
cDO2 mix dyO2
1
(r NO2 ,r )
2
R
r 2
dr = cDO2 mix ( yO2 yO2S )
NO2,r is a func:on of r, but r2NO2,r
C(s) + O2(g) CO2(g)
is not. Why?
21
Example 4
1
(r N )
2
O2 ,r R 2
r
dr = cDO2 mix ( yO2 yO2S )
1
( O2 ,r ) R = cDO2 mix yO2 assume fast reac:on
r 2
N
23