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On the occasion of receiving the 2000 Nobel Prize in Physics, along with Zhores I. Alferov,
for the contributions in developing semiconductor heterostructures, Dr. Herbert
Kroemer addresses his original generalization of the design principle of heterostructure
devices, and his following work on heterostructures [1].
When heterogeneous materials with different band structures are grown together, a
quasielectric field, as coined by Kroemer, develops at the interface between the two
materials. These quasielectric fields provide more degrees of control of electron and
hole carriers inside semiconductors than external electric fields can do. On the other
hand, the whole band structure is by somehow aligning the individual band structures
involved, with transition region, which can be smooth or quite abrupt. In terms of band
alignment or band offsets, HSs can be divided into three categories shown in Fig. 1.
In order to make a working HS, lattice matching is required ( 0.01 or 0.2 %). But in
HSs made in very thin layers, lattice mismatch may not be a serious issue. Another issue
one should be concerned about when making HS is valence matching, that is, each
covalent bonds formed by atoms from heterogeneous materials should be provided
exactly two electrons. Successful growth of HSs was not so easy until the emergence of
Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD).
Different effort was made to determining band offsets. A quite satisfying example is
Capacitance-Voltage (C-V) profiling.
In another word, a pole star, when it was born, didnt know what it could do for human
beings on earth, nor might it even know it could be seen by any human being from
somewhere in the universe, but a person who is looking for direction in the dark and
knows its existence may look for it.
[1] Kroemer, Herbet. Reviews of Modern Physics, Vol. 73, July 2001