MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors

MJE170, MJE171, MJE172
(PNP), MJE180, MJE181,

MJE182 (NPN)
Preferred Device
Complementary Plastic
Silicon Power Transistors
http://onsemi.com
The MJE170/180 series is designed for low power audio amplifier
and low current, high speed switching applications.
3 AMPERES
Features
• Collector−Emitter Sustaining Voltage − POWER TRANSISTORS
VCEO(sus) = 40 Vdc − MJE170, MJE180 COMPLEMENTARY SILICON
= 60 Vdc − MJE171, MJE181 40 − 60 − 80 VOLTS
= 80 Vdc − MJE172, MJE182
12.5 WATTS
• DC Current Gain −
hFE = 30 (Min) @ IC = 0.5 Adc
= 12 (Min) @ IC = 1.5 Adc
• Current−Gain − Bandwidth Product −
fT = 50 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages −
TO−225AA
ICBO = 100 nA (Max) @ Rated VCB CASE 77−09
• Epoxy Meets UL 94 V−0 @ 0.125 in STYLE 1
• ESD Ratings: Machine Model, C 3 2
1
Human Body Model, 3B
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MARKING DIAGRAM
MAXIMUM RATINGS
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Base Voltage VCB Vdc
MJE170, MJE180 60 YWW
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
MJE171, MJE181 80 JE1xxG
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MJE172, MJE182 100
Collector−Emitter Voltage VCEO Vdc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
MJE170, MJE180 40
ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎ ÎÎÎ
MJE171, MJE181 60
MJE172, MJE182 80 Y = Year
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
WW = Work Week
Emitter−Base Voltage VEB 7.0 Vdc JE1xx = Specific Device Code
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Current − Continuous IC 3.0 Adc x = 70, 71, 72, 80, 81, or 82
− Peak 6.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
G = Pb−Free Package
Base Current IB 1.0 Adc
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TC = 25_C PD 1.5 W ORDERING INFORMATION
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Derate above 25_C 0.012 W/_C See detailed ordering and shipping information in the package
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Power Dissipation @ TA = 25_C PD 12.5 W dimensions section on page 5 of this data sheet.
Derate above 25_C 0.1 W/_C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
Maximum ratings are those values beyond which device damage can occur.
_C Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

January, 2006 − Rev. 9 MJE171/D
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case qJC 10 _C/W
Thermal Resistance, Junction−to−Ambient qJA 83.4 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎÎ Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Collector−Emitter Sustaining Voltage MJE170, MJE180 VCEO(sus) 40 Vdc
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ
(IC = 10 mAdc, IB = 0) MJE171, MJE181 60 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
MJE172, MJE182 80 −
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO mAdc
(VCB = 60 Vdc, IE = 0) MJE170, MJE180 − 0.1
ÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) MJE171, MJE181 − 0.1
(VCB = 100 Vdc, IE = 0) MJE172, MJE182 − 0.1 mAdc
ÎÎÎÎÎ
(VCB = 60 Vdc, IE = 0, TC = 150°C) MJE170, MJE180
(VCB = 80 Vdc, IE = 0, TC = 150°C) MJE171, MJE181 − 0.1
(VCB = 100 Vdc, IE = 0, TC = 150°C) MJE172, MJE182 − 0.1
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎ
IEBO − 0.1 mAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
DC Current Gain hFE −
(IC = 100 mAdc, VCE = 1.0 Vdc) 50 250
(IC = 500 mAdc, VCE = 1.0 Vdc) 30 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 1.5 Adc, VCE = 1.0 Vdc) 12 −
ÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 500 mAdc, IB = 50 mAdc) − 0.3
ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 1.5 Adc, IB = 150 mAdc) − 0.9
(IC = 3.0 Adc, IB = 600 mAdc) − 1.7
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 1.5 Adc, IB = 150 mAdc) − 1.5
ÎÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 3.0 Adc, IB = 600 mAdc) − 2.0
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
Base−Emitter On Voltage VBE(on) − 1.2 Vdc
(IC = 500 mAdc, VCE = 1.0 Vdc)
ÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ
Current−Gain − Bandwidth Product (Note 1) fT 50 − MHz
Output Capacitance ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Cob pF
ÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171/MJE172 − 60
MJE181/MJE182 − 40
1. fT = ⎪hfe⎪• ftest.
http://onsemi.com
2
TA TC
2.8 14
2.4 12
PD, POWER DISSIPATION (WATTS)

2.0 10
1.6 8.0 TC
1.2 6.0
0.8 4.0 TA
0.4 2.0
0 0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+30 V
1K
500 VCE = 30 V
RC IC/IB = 10
25 ms 300 tr
200 VBE(off) = 4.0 V
+11 V RB SCOPE TJ = 25°C
100
0
t, TIME (ns)
50
−9.0 V 51 D1
30
20 td
tr, tf ≤ 10 ns
−4 V 10
DUTY CYCLE =
1.0% 5
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS NPN MJE181/182
3
D1 MUST BE FAST RECOVERY TYPE, e.g.: 2 PNP MJE171/172
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA 1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time
1.0
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.3 0.2
0.2 0.1 P(pk)
qJC(t) = r(t) qJC
0.05 qJC = 10°C/W MAX
0.1 D CURVES APPLY FOR POWER
0.07 0.02 PULSE TRAIN SHOWN t1
0.05 0.01 READ TIME AT t1 t2
TJ(pk) − TC = P(pk) qJC(t)
0.03 0 (SINGLE PULSE) DUTY CYCLE, D = t1/t2
0.02
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
t, TIME (ms)
Figure 4. Thermal Response
http://onsemi.com
3
ACTIVE−REGION SAFE OPERATING AREA
10 10
5.0 100ms 5.0
100ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)

2.0 500ms 2.0
500ms
1.0 dc 1.0 5.0ms
5.0ms dc
0.5 0.5
TJ = 150°C TJ = 150°C
0.2 BONDING WIRE LIMITED 0.2 BONDING WIRE LIMITED
THERMALLY LIMITED @ THERMALLY LIMITED @
0.1 TC = 25°C (SINGLE PULSE) 0.1
TC = 25°C (SINGLE PULSE)
0.05 SECOND BREAKDOWN LIMITED 0.05 SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW CURVES APPLY BELOW MJE181
0.02 RATED VCEO MJE171 0.02 RATED VCEO MJE182
0.01 MJE172 0.01
1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC
a transistor − average junction temperature and second is variable depending on conditions. Second breakdown
breakdown. Safe operating area curves indicate IC − VCE pulse limits are valid for duty cycles to 10% provided
limits of the transistor that must be observed for reliable T J(pk) t 150°C. TJ(pk) may be calculated from the data in
operation; i.e., the transistor must not be subjected to greater Figure 4. At high case temperature, thermal limitations will
dissipation than the curves indicate. reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K 100
5K VCC = 30 V PNP MJE171/MJE172
IC/IB = 10 70 NPN MJE181/MJE182
3K
2K IB1 = IB2
C, CAPACITANCE (pF)
TJ = 25°C 50
1K Cib
t, TIME (ns)
TJ = 25°C
500
300 ts 30
200
100
tf 20
50
30 Cob
20 NPN MJE181/182
PNP MJE171/172
10 10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Turn−Off Time Figure 8. Capacitance
http://onsemi.com
4
ORDERING INFORMATION
Device Package Shipping
MJE170 TO−225
MJE170G TO−225
(Pb−Free)
MJE171 TO−225
MJE171G TO−225
(Pb−Free)
MJE172 TO−225
MJE172G TO−225
(Pb−Free)
500 Units / Box
MJE180 TO−225
MJE180G TO−225
(Pb−Free)
MJE181 TO−225
MJE181G TO−225
(Pb−Free)
MJE182 TO−225
MJE182G TO−225
(Pb−Free)
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
−B− 1. DIMENSIONING AND TOLERANCING PER ANSI
U F C Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
M 077−09.
−A−
INCHES MILLIMETERS
1 2 3 DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
H C 0.095 0.105 2.42 2.66
K D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
V J K 0.575 0.655 14.61 16.63
M 5_ TYP 5 _ TYP
G R Q 0.148 0.158 3.76 4.01
S 0.25 (0.010) M A M B M R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
D 2 PL U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
0.25 (0.010) M A M B M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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6

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors

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MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors

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MJE170, MJE171, MJE172

(PNP), MJE180, MJE181,

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Cob pF

PD, POWER DISSIPATION (WATTS)

Figure 1. Power Derating

Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time

Figure 4. Thermal Response

ACTIVE−REGION SAFE OPERATING AREA

IC, COLLECTOR CURRENT (AMP)

Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182

Figure 7. Turn−Off Time Figure 8. Capacitance

PUBLICATION ORDERING INFORMATION

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