DISCRETE SEMICONDUCTORS

DATA SHEET

BFG135
NPN 7GHz wideband transistor
Product specification 1995 Sep 13
File under discrete semiconductors, SC14
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

DESCRIPTION PINNING
NPN silicon planar epitaxial transistor PIN DESCRIPTION
in a plastic SOT223 envelope, age 4
1 emitter
intended for wideband amplifier
applications. The small emitter 2 base
structures, with integrated 3 emitter
emitter-ballasting resistors, ensure 4 collector
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile. 1 2 3
Top view MSB002 - 1

Fig.1 SOT223.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 80 130
fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; 7 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz; 16 dB
gain Tamb = 25 C
IC = 100 mA; VCE = 10 V; f = 800 MHz; 12 dB
Tamb = 25 C
Vo output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V; 850 mV
RL = 75 ; Tamb = 25 C;
f(p+qr) = 793.25 MHz

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 145 C (note 1) 1 W
Tstg storage temperature 65 150 C
Tj junction temperature 175 C

Note
1. Ts is the temperature at the soldering point of the collector tab.

1995 Sep 13 2
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

THERMAL CHARACTERISTICS

THERMAL
SYMBOL PARAMETER CONDITIONS
RESISTANCE
Rth j-s thermal resistance from junction to soldering up to Ts = 145 C (note 1) 30 K/W
point

Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 10 V 1 A
hFE DC current gain IC = 100 mA; VCE = 10 V 80 130
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 2 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 7 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1.2 pF
fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; 7 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 100 mA; VCE = 10 V; 16 dB
gain f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V; 12 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 1 900 mV
note 2 850 mV
d2 second order intermodulation IC = 90 mA; VCE = 10 V; 58 dB
distortion VO = 50 dBmV; Tamb = 25 C;
f(p+q) = 450 MHz;
fp = 50 MHz; fq = 400 MHz
IC = 90 mA; VCE = 10 V; 53 dB
VO = 50 dBmV; Tamb = 25 C;
f(p+q) = 810 MHz;
fp = 250 MHz; fq = 560 MHz

Notes
1. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
2. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 795.25 MHz;
Vq = Vo 6 dB; fq = 803.25 MHz;
Vr = Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.

1995 Sep 13 3
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135







,,
,
VCC
handbook, full pagewidth
L6 C4 C5
VBB L5
C3 L3
C6
output
R1 R2
75
C1 L1 L2 L4
input
75 DUT

C7
C2
R3 R4

MBB284

Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.

List of components (see test circuit)

DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.

C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627
C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108
C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103
L1 microstripline 75 length 7 mm;
width 2.5 mm
L2 microstripline 75 length 22mm;
width 2.5 mm
L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;
winding pitch 1 mm
L4 microstripline 75 length 19 mm;
width 2.5 mm
L5 Ferroxcube choke 5 H 3122 108 20153
L6 (note 1) 0.4 mm copper wire 25 nH length 30 mm
R1 metal film resistor 10 k 2322 180 73103
R2 (note 1) metal film resistor 200 2322 180 73201
R3, R4 metal film resistor 27 2322 180 73279

Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness
1
16 inch; thickness of copper sheet 32 inch.
1

1995 Sep 13 4
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

handbook, full pagewidth

VBB VCC
C3 C5

R1 L5
R3

C1 L3 C6
75 75
L1 L2 L4
input output

C2 C7
R4 C4
R2 L6

MBB299

80 mm
andbook, full pagewidth

60 mm

MBB298

handbook, full pagewidth

MBB297

Fig.3 Intermodulation distortion test printed-circuit board.

1995 Sep 13 5
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

MBB300 MBB294
1.2 160
handbook,
P halfpage handbook, halfpage
tot
(W)
1.0 h FE

0.8 120

0.6

0.4 80

0.2

0 40
0 50 100 150 200 0 40 80 120 160
Ts ( o C) I C (mA)

VCE = 10 V; Tj = 25 C.

Fig.5 DC current gain as a function of collector

Fig.4 Power derating curve. current.

MBB295 MBB296
3 8
handbook, halfpage handbook, halfpage
fT
C re
(GHz)
(pF)
6

1
2

0 0
0 4 8 12 16 20 0 40 80 120 160
VCB (V) I C (mA)

IE = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 1 GHz; Tamb = 25 C.

Fig.6 Feedback capacitance as a function of Fig.7 Transition frequency as a function of

collector-base voltage. collector current.

1995 Sep 13 6
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

MBB292 MBB293
45 45
handbook, halfpage handbook, halfpage
d im d im
(dB) (dB)
50 50

55 55

60 60

65 65

70 70
20 40 60 80 100 120 20 40 60 80 100 120
I C (mA) I C (mA)

VCE = 10 V; Vo = 900 mV; Tamb = 25 C; VCE = 10 V; Vo = 850 mV; Tamb = 25 C;

f(p+qr) = 443.25 MHz. f(p+qr) = 793.25 MHz.

Fig.8 Intermodulation distortion as a function of Fig.9 Intermodulation distortion as a function of

collector current. collector current.

MBB291 MBB290
45 45
handbook, halfpage handbook, halfpage
d2 d2
(dB) (dB)
50 50

55 55

60 60

65 65

70 70
20 40 60 80 100 120 20 40 60 80 100 120
I C (mA) I C (mA)

VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C

f(p+q) = 450 MHz. f(p+q) = 810 MHz.

Fig.10 Second order intermodulation distortion as Fig.11 Second order intermodulation distortion as
a function of collector current. a function of collector current.

1995 Sep 13 7
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

MEA951 MEA952
60 50
handbook,
Z halfpage handbook, halfpage
L ZL
()
50 ()
40
RL
40
RL
30
30

20
20

10
10
0

XL XL
10 0
0 0.25 0.50 0.75 1.0 0 0.5 1
POUT (W) 1.5
POUT (W)

VCE = 7.5 V; f = 900 MHz. VCE = 10 V; f = 900 MHz.

Fig.12 Load impedance as a function of output Fig.13 Load impedance as a function of output
power. power.

MEA953 MEA948
60 10
handbook, halfpage handbook, halfpage
ZL
Zi
()
()
50
8
ri
RL
40 xi
6

30

4
20

XL 2
10

0 0
0 0.5 1 P (W) 1.5 0 0.25 0.50 0.75 1.0
OUT P (W)
OUT

VCE = 12.5 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz.

Fig.14 Load impedance as a function of output Fig.15 Input impedance as a function of output
power. power.

1995 Sep 13 8
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

MEA949 MEA950
10 10
handbook, halfpage handbook, halfpage
Zi Zi
() ()
8 8
ri ri

6 6
xi xi

4 4

2 2

0 0
0 0.5 1 1.5 0 0.5 1 1.5
POUT (W) POUT (W)

VCE = 10 V; f = 900 MHz. VCE = 12.5 V; f = 900 MHz.

Fig.16 Input impedance as a function of output Fig.17 Input impedance as a function of output
power. power.

MEA947 MEA945
80 1.5
handbook, halfpage handbook, halfpage V CE =
12.5 V
P OUT
(%)
(W)
70 V CE =
10 V
12.5 V
1

10 V
7.5 V 7.5 V
60

0.5
50

40 0
0 0.5 1 POUT (W) 1.5 0 100 200 300
P IN (mW)

f = 900 MHz. f = 900 MHz.

Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power.

1995 Sep 13 9
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

MEA946 MBB289
10 40
handbook, halfpage handbook, halfpage
Gp G UM
(dB) (dB)
V =
8 CE
12.5 V 30

6
10 V
20
7.5 V
4

10
2

0 0
0 0.5 1 POUT (W) 1.5 10 102 103 104
f (MHz)

IC = 100 mA; VCE = 10 V; Tamb = 25 C.

f = 900 MHz.
Fig.21 Maximum unilateral power gain as a
Fig.20 Power gain as a function of output power. function of frequency.

1995 Sep 13 10
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

50
handbook, full pagewidth

25 100

10 250

+j

10 25 50 100 250
0
j

10 250

25 100

MBB288
50
IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 ..

Fig.22 Common emitter input reflection coefficient (S11).

90 o
handbook, full pagewidth
120 o 60 o

150 o 30 o

50 40 30 20 10
180 o 0o

150 o 30 o

120 o 60 o

90 o MBB286

IC = 100 mA; VCE = 10 V; Tamb = 25 C.

Fig.23 Common emitter forward transmission coefficient (S21).

1995 Sep 13 11
Philips Semiconductors Product specification

NPN 7GHz wideband transistor BFG135

90 o
handbook, full pagewidth
120 o 60 o

150 o 30 o

0.1 0.2 0.3 0.4 0.5 0.6

180 o 0o

150 o 30 o

120 o 60 o

90 o MBB285

IC = 100 mA; VCE = 10 V; Tamb = 25 C.

Fig.24 Common emitter reverse transmission coefficient (S12).

50
handbook, full pagewidth

25 100

10 250

+j

10 25 50 100 250
0
j

10 250

25 100

MBB287
50
IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 ..

Fig.25 Common emitter output reflection coefficient (S22).

1995 Sep 13 12