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Yifan Lu
EE 330
Section F
Lab 6 report
10/1/2017
Introduction
In this lab, we will be analyzing the relationship between the square law
model of the MOS transistor and the BSIM model. We will be extracting different
Since VGS VT, then the circuit is running under saturation condition as following:
W
ID = Cox (V VT )2 (1 + VDS )
2L GS
VT = VT0 + ( VBS )
Measured data:
W
ID1 (VGS1 VT )2 Cox 2L (1 + VDS1 )
=
ID2 (VGS2 VT )2 C W (1 + V )
ox 2L DS2
ID1 (VGS1 VT )2
=
ID2 (VGS2 VT )2
265.2 (2 VT )2
=
479.6 (2.5 VT )2
VT = 0.55V
a) In order to find out the , I kept the VGS =2V and used the two values of VGS (VGS1=4V or VGS2=4.5V)
Measured data:
W
ID1 (VGS1 VT )2 Cox 2L (1 + VDS1 )
=
ID2 (VGS2 VT )2 C W (1 + V )
ox 2L DS2
ID1 (1 + VDS1 )
=
ID2 (1 + VDS2 )
265.2 1 + 4
=
266.1 1 + 4.5
= 6.97 103
Lu 4
b) For gaining Cox, I plugged the parameter obtained above as shown below.
W
ID = Cox (V VT )2 (1 + VDS )
2L GS
12
265.2 = Cox (2 0.55)2 (1 + 6.97 103 4)
23
Cox = 62.3uA/V 2
c) Finally, for getting , I changed the value of VBS from 0V to -2V and gained new value of VT .
Measured data:
VT = VT0 + ( VBS )
= 0.643
Lu 5
W=1.5, L=0.6
VT = 0.78V; = 0.184;
As we can see from the figure, the Id from the plot(the second lowest one, which has the
corresponding Vgs value) is around 260uA and is very close to the calculation from the square
law test value265.2uA.
265.2260
With a difference value of The difference in % being: 265.2
= 0.19%
1913
Error = 19
= 31.3%
Relatively higher than the precious one, the larger percentage of error is caused by the smaller value of Id
and error level increased relatively.
Analysis
Lu 7
Comparing values of BSIM model with the square-law model, I think error percentage
will increase when the size (W/L) of MOSFET increases. Thus, using a larger sized (W/L value
Part 5:
For this part, I will be using the small signal output conductance to find relationship
vs L
0.0044
0.0042
0.004
0.0038
0.0036
0.0034
0.0032
0.003
3.5 4.5 5.5 6.5 7.5 8.5
Vds I g
Vds vs L
0.0085
0.008
0.0075
vds vs L
0.007
0.0065
0.006
2.2 2.4 2.6 2.8 3 3.2 3.4 3.6
Analysis:
From the graphs and tables above, the channel length modulation constant of the MOS
Conclusion
In this weeks lab, I utilized BSIM model to verify with the calculations from square-law
model. There does exist some errors between the calculations and the BSIM models and it seems
like the square-law model has a relatively bigger error than BSIM model. I think part of the
reason is due to the fact that BSIM model has 95 process parameters while the square-law model
only has 6 process parameters. I would use BSIM model in future which would give me a more
precise measurement.