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PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
PS21964-ST
INTEGRATED POWER FUNCTIONS
600V/15A low-loss 5th generation IGBT inverter bridge for
three phase DC-to-AC power conversion.
Open emitter type.
APPLICATION
AC100V~200V inverter drive for small power motor control.
38 0.5
A B 3.5 TERMINAL CODE
201.778 (=35.56 )
0.28 35 0.3 1.5 0.05 1. (VNC)
0.4
17 1 4. VWFB
5. UP
6. VP
7. WP
14.4 0.5
8. VP1
9. VNC *
(3.5)
(3.3)
10. UN
11. VN
33.7 0.5
29.2 0.5
24 0.5
12. WN
13. VN1
.6
2-
R1
QR Type name 14. FO
15. CIN
18.9 0.5
14.4 0.5
16. VNC *
12
4-C1.2
142.54 (=35.56) 2.5 MIN
0.5 0.5
0.5 0.5 (2.656)
1.5m
in
(0~5)
9.5 0.5
(1.2)
(1.2)
(2.756)
5.5 0.5
*) Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open. QR Code is registered trademark of DENSO WAVE INCORPORATED in Japan and other countries.
Mar. 2009
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
VD = 13.5~16.5V, Inverter part
VCC(PROT) Self protection supply voltage limit 400 V
(short circuit protection capability) Tj = 125C, non-repetitive, less than 2s
TC Module case operation temperature (Note 2) 20~+100 C
Tstg Storage temperature 40~+125 C
60Hz, Sinusoidal, 1 minute,
Viso Isolation voltage 1500 Vrms
Between pins and heat-sink plate
Control terminals
11.6mm
3mm
Power terminals
Mar. 2009
2
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Junction to case thermal Inverter IGBT part (per 1/6 module) 3.0 C/W
Rth(j-c)F resistance (Note 3) Inverter FWD part (per 1/6 module) 3.9 C/W
Note 3 : Grease with good thermal conductivity should be applied evenly with about +100m~+200m on the contacting surface of DIPIPM and
heat-sink.
The contacting thermal resistance between DIPIPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal con-
ductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3C/W when the grease thickness is 20m and
the thermal conductivity is 1.0W/mk.
Mar. 2009
3
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
Measurement position
+ 4.6mm
+
Heat sink side
Mar. 2009
4
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
VUFB
HVIC P
UP UP UOUT
VP VP VOUT
VVS V
WP WP WOUT
VWS W
IGBT4 Di4
LVIC
UOUT
VN1 VCC NU
IGBT5 Di5
VOUT
UN UN
NV
VN VN IGBT6 Di6
WN WN
WOUT
Fo Fo CIN
NW
VNO
VNC GND
CIN
Mar. 2009
5
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
Lower-side control a6 a7
input
SC a4
a1
Output current Ic a8
SC reference voltage
Sense voltage of the
shunt resistor
CR circuit time
constant DELAY
Error output Fo a5
Control input
UVDr
Control supply voltage VD b1 UVDt b6
b3
b4
b2 b7
Output current Ic
Error output Fo
b5
Mar. 2009
6
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
Control input
UVDBr
Control supply voltage VDB c1 UVDBt c5
c3
c2 c4 c6
Output current Ic
OTt
LVIC temperature d2 d5
OTrh
d1 d3 d6
Output current Ic
Fault output Fo d4
10k DIPIPM
UP,VP,WP,UN,VN,WN
MCU
3.3k (min)
Fo
VNC(Logic)
Note : The setting of RC coupling at each input (parts shown dotted) depends on the PWM control scheme and the
wiring impedance of the printed circuit board.
The DIPIPM input section integrates a 3.3k (min) pull-down resistor. Therefore, when using an external fil-
tering resistor, pay attention to the turn-on threshold voltage.
Fig. 5 WIRING CONNECTION OF SHUNT RESISTOR
VNC
NU
NV
NW
Shunt resistors
Please make the GND wiring connection
of shunt resistor to the VNC terminal
as close as possible.
Mar. 2009
7
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21964-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
C2 C1 C2 C1 C2 C1
Bootstrap negative electrodes
should be connected to U, V,
W terminals directly and
separated from the main output
wires.
U
VUS
VVB
VP
VP VOUT
V
VVS M
VWB
WP
WP WOUT
VNC W
COM VWS
MCU
LVIC
UOUT
VN1 NU
VCC
5V line C3
VOUT
UN
UN NV
VN VN
WN
WN
WOUT
Fo
Fo CIN NW
VNO
VNC
GND Long wiring here might C
cause short-circuit.
CIN
Note 1 : Input drive is High-Active type. There is a 3.3k(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each in-
put should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage.
2 : Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible.
3 : FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10k.
4 : To prevent erroneous protection, the wiring of A, B, C should be as short as possible.
5 : The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2s. SC interrupting time might vary with the
wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4.
6 : All capacitors should be mounted as close to the terminals of the DIPIPM as possible. (C1: good temperature, frequency character-
istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.)
7 : To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible.
Generally a 0.1-0.22F snubber between the P-N1 terminals is recommended.
8 : Two VNC terminals (9 & 16 pin) are connected inside DIPIPM, please connect either one to the 15V power supply GND outside and
leave another one open.
9 : It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended
to connect control GND and power GND at only a point.
11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V).
12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V).
Mar. 2009